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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

lc 945 p transistor

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lc 945 p transistor

Abstract: transistor 2 FC 945 Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Figure 3. C o lle cto r Base C a p a cita n ce vs. C o lle cto r Base Voltage 13620 lc - Collector , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low
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lc 945 p transistor

Abstract: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz 1 1 · · Low noise figure
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lc 945 p transistor NPN

Abstract: BFR96S Semiconductors 3T3 H A P X Product specification NPN 5 GHz wideband transistor BFR96S , DOBITDO T45 * A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor , hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device features
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lc 945 p transistor NPN S3R31 BFQ32S BFR96S/02

lc 945 p transistor

Abstract: lc 945 p transistor NPN transistor £ BFR96S ^N AHER PHILIPS/DISCRETE hIE T> ' DESCRIPTION NPN transistor in a plastic SOT37 , vCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 15 V lc DC , transition frequency lc = 70 mA; VGE = 10 V; f = 500 MH2; Tj = 25 °C 5 - GHz cre feedback capacitance lc = 0; VCE = 10 V; f = 1 MHz 1 - PF GUM maximum unilateral power gain lc = 70 mA; VCE = 10 V; f = 800 MHz; Tomb = 25 °C 11.5 - dB F noise figure lc = 70 mA; VCE = 10 V; f = 800 MHz; "1^=25 °C 4 - dB
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lc 945 p transistor lc 945 transistor 6852 d TRANSISTOR s5D transistor transistor B 764 SL 100 NPN Transistor

lc 945 p transistor

Abstract: lc 945 transistor 25 Vdc, P o u t = 15 w , lC Q = 100 mA, f = 960 MHz) >1C 50 % Intermodulation Distortion (V c c = 25 Vdc, P o u , = 15 W (P E P ), f2 = 9 1 6M H z) lC Q = 100 mA, f, = 915 MHz, IMD - -32 - dBc Load Mismatch Tolerance (V c c = 25 Vdc, P o u t = 15 W, lC Q = 100 , ~ LU Icq = 100 m A P out = 15 W 30 1 900 915 1 930 1 945 1 960 975 , ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The
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transistor LC 945

transistor k 911

Abstract: T7 â  P HIN Product specification PNP 5 GHz wideband transistor BFT93 MEA382 -2 , PhHip^emiconductore H 711002b QDbTBbl STA M P H I N ^^Produc^pecification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope , , radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation , VcEO collector-emitter voltage open base lc DC collector current Pm total power
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transistor k 911 BFR93 BFR93A

527H

Abstract: D 1413 transistor S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for , current consumption 50 Q input impedance at 945 MHz · Low noise figure · High power gain Marking: 822 , Vebo Ic P tot Tj Tstg VMae 12 6 2 8 30 150 -65 to +150 Unit V V V mA mW =C -c Maximum Thermal , Geaditions Transition frequency VCE = 3 V, lc = 1 mA. f = 500 MHz VCE = 2 V, lc = 1.5 mA, f = 500 MHz , V, lc = 1.5 mA Zs = Zsopt, f = 450 MHz, VCE = 2 V, Ic = 0.5 mA Power gain VCE = 3 V. Ic = 1 mA, f =
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527H D 1413 transistor 1300M

lc 945 p transistor

Abstract: lc 945 transistor general purpose high frequency switching applications. QUICK REFERENCE DATA SYMBOL VC E lc P lo t V C , Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A C /p F Fig. 10. Typical , Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a , MAX. 800 800 30 24 12 40 50 125 150 150 UNIT V V V A A A A W *C ±vG E IcLM IcM P fô t T s tg
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T0220AB BUK856-8Q0A

transistor LC 945

Abstract: 40 50 125 150 150 UNIT V V V A A A A W lc lc IcLM Ic M P., Ts tg Tj , Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a , general purpose high frequency switching applications. QUICK REFERENCE DATA SYMBOL VC E lc , on-state voltage Turn-off energy Loss MAX. 800 24 125 3.5 1.0 UNIT V A W V mJ P lo t VcEsat
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lc 945 p transistor

Abstract: transistor LC 945 -00511 Surface Mount General Purpose Silicon Bipolar Transistor Features â'¢ 11 dB Typical P,dB at 2.0 GHz â , Available1 Description The AT-00511 is a low cost NPN silicon bipolar transistor housed in the surface , Stable Gain vs. Frequency VCE = 8V, lc= 5 mA SOT-143 Plastic Package EMITTER BASE á 0.92 (0.0361 , (0.006) 0.09 (0-003) â -j ».w iv-uwi i . (p A-J\_\ T 0.10 (0.004) 0.013 (0.0005) DIMENSIONS ARE , = 8 V, lc = 10 mA .5 1.0 2.0 Frequency, GHz 5.0 FREQ NFo ropt Rn/Zo GHz dB MAG ANG - 0.1 1.3
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T773 M447SA4 0DDT77E

lc 945 p transistor NPN TO 92

Abstract: lc 945 transistor ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to , VcER V CBO V EBO Value 40 65 4.0 8.0 145 0.83 Unit Vdc Vdc Vdc Ade Watts W/°C °C °C/W lc PD , , lc = 50 mA V Be = 0 V, lc = 50 mA |q = 0 A, Ie = 5 mA V c e = 5 V, lc = 250 mA Symbol V(BR)CEO V , Volts Volts - RF S p e c ific a tio n s Characteristic Gain (VCc (100% Tested) Symbol Pout
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lc 945 p transistor NPN TO 92

D 1414 transistor

Abstract: AT-00511 ml'FA PACKARD AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor Features · · · · · , AT-00511 is a low cost NPN silicon bipolar transistor housed in the surface mount plastic SOT , . Frequency VCE = 8 V ,lc = 5 m A 2.642 (0.104) 2.108(0.083) Typical Noise Parameters: VCE= 8 V, lc = , Power Gain: VCE = 8 V, lc = 5 mA Power Output @ 1 dB Compression: Vce = 8 V, lc = 15 mA 1 dB Compressed Gain: VCE = 8 V, lc = 15 mA Optimum Noise Figure: Vce = 8 V, lc = 5 mA Gain @ NFo: VCE = 8 V, lc = 10
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D 1414 transistor 4447SA4 0X103

lc 945 p transistor NPN

Abstract: lc 945 p transistor ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the , Above 25°C derate by (/> (Q T f|a n g e Symbol VcER V CBO V ebo lc = 25°C PD Value 40 50 4.0 , E to B DC Current Gain Tested) ERICSSON ^ Conditions Ib = 0 A, lc = 50 mA V Be = 0 V, lc = 50 mA |q = 0 A, Ie = 5 mA V c e = 5 V, lc = 250 mA Symbol V(BR)CEO V (BR)CES V(BR)EBO hFE Min 25
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T-------------14

lc 945 p transistor NPN

Abstract: lc 945 p transistor NPN TO 92 Tamb - 25 J C -6 5 -65 lc I CM Ib m P tot T"stg T, Tamb THERMAL CHARACTERISTICS SYMBOL R th , K/W Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 May 20 945 Philips , . DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complements: PH2907 and PH2907A , VcBO PARAMETER collector-base voltage PH2222 PH2222A VCEO collector-emitter voltage PH2222 PH2222A lc P lo t CONDITIONS open emitter open base "^"amb - 2 5 ->C MIN. MAX. UNIT 60 75 V
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65LC
Abstract: POlilEREX INC m 3*1E D â  7Stm b51 000407b fl H P R X u /a u x T-l'l-lZ , ., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Chopper Darlington Transistor Module 30 Amperes/1000 Volts Description Powerex Chopper Darlington Transistor Modules are , Transistor having a reverse parallel connected and emitter-cathode connected high-speed diode. OUTLINE , CONNECTION DIAG RAM KR221K03 Chopper Darlington Transistor Module 30 Amperes/1000 Volts â -
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IS697 T-33-35 KR22IK03
Abstract: 3^E J m > POtilEREX I N C m / U E R E 75=i4bEl D004GÃM 7 « P R X r-lJ-JS , Transistor Module 50 Amperes/1000 Volts Description Powerex Chopper Darlington Transistor Modules are , Transistor having a reverse parallel connected and emitter-cathode connected high-speed diode. OUTLINE OftAMHO Features: â¡ Isolated Mounting â¡ Planar Chips KR221K05 Chopper Darlington Transistor , Regulator C 1.339 Max. 34 Max. D 1.181 Max. 30 Max. E .906 23 F .945 24 -
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Abstract: b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF , . The transistor features low intermodulation distortion and high power gain; due to its very high , Ts = 70 °C (note 1) - 300 mW fj transition frequency lc = -30 mA; VC = -5 V; f = 500 MHz; E T, = 25 °C 5 â' GHz câ'ž feedback capacitance lc = -2 mA; Vce = -5 V -
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lc 945 p transistor NPN TO 92

Abstract: 945 TRANSISTOR M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR(NPN) F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ , CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e : * ^ 1N » . * * 5 " * V(BR)CBO s p e c ifie d , lc= 1000 u A, I e=0 lc= 0.1 mA, Ib=0 i I e= 1 0 0 1 » A, I c =0 V cb= 6 0 V, Ie =0 V ce= 55 V, R = 10 M O V eb= 5 V, lc=0 V ce = 6 V, lc= 1 mA V ce = 6 V, lc= 0.1 mA 60 50 5 0.1 0.1 0.1 70 40 7 00
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945 TRANSISTOR C 945 Transistor transistor c945 TRANSISTOR c945 p C945 BR c945 IJ11III

TAG 8907

Abstract: lc 945 p transistor PhjjjP^Semiconductors M 711005b ODb^Bbl SIS PNP 5 GHz wideband transistor PHIN Product specification £ BFT93 DESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for , analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very , transition frequency lc = -30 mA; VCE = -5 V; f = 500 MHz; T, = 25 °C 5 - GHz cre feedback capacitance ic = -2 mA; VCE = -5 V; f = 1 MHz 1 - pF GUM maximum unilateral power gain lc = -30 mA; VCE = -5 V; f =
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TAG 8907 1348 transistor B 1449 transistor B 1446 transistor 2F PNP SOT23 SiS 671

bt 1690 transistor

Abstract: bt 1696 Philips Semiconductors Product specification PNP 5 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION PNP transistor in a plastic SOT37 envelope. It is primarily , transistor P H I L IP S I N T E R N A T I O N A L SbE D 7"* 3 / ¡7 BFQ51 711062b D4S4 bt l 2T4 , Product specification PNP 5 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L 5bE » BFQ51 7 1 1 0 6 2 b 0 0 4 5 4 7 0 Tib P H I N lc = -14 mA; VCE = -10 V; Tarrt) = 25 °C. Fig
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bt 1690 transistor bt 1696 bt 1690 philips bt 1696 transistor of bt 1696 C 3355 transistor BFR90A 0D454 G0M54
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