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Part Manufacturer Description Datasheet BUY
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil

lc 945 p transistor NPN TO 92

Catalog Datasheet MFG & Type PDF Document Tags

lc 945 p transistor NPN

Abstract: lc 945 p transistor NPN TO 92 . DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complements: PH2907 and PH2907A , Tamb - 25 J C -6 5 -65 lc I CM Ib m P tot T"stg T, Tamb THERMAL CHARACTERISTICS SYMBOL R th , K/W Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 May 20 945 Philips , Philips Semiconductors Product specification NPN switching transistors FEATURES · High , VcBO PARAMETER collector-base voltage PH2222 PH2222A VCEO collector-emitter voltage PH2222 PH2222A lc
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lc 945 p transistor NPN lc 945 p transistor NPN TO 92 lc 945 p transistor 65LC lc 945 transistor

lc 945 p transistor NPN TO 92

Abstract: lc 945 transistor ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to , implantation, nitride surface passivation and gold metallization are used to ensure excellent device , VcER V CBO V EBO Value 40 65 4.0 8.0 145 0.83 Unit Vdc Vdc Vdc Ade Watts W/°C °C °C/W lc PD , PTB 20148 Electrical C h a ra c te ris tic s Characteristic Breakdown Voltage C to E Breakdown
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lc 945 p transistor NPN TO 92

Abstract: 945 TRANSISTOR M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR(NPN) F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range T j.T s tg : -55°C to + 150"C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e : * ^ 1N » . * * 5 " * V(BR)CBO s p e c ifie d , ) A M B IE M T T E M P E R A T U R E Ta(°C) CO LLECTO R CURRENT v s.C O L L E C T O R TO E M IT T E
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945 TRANSISTOR C 945 Transistor transistor c945 TRANSISTOR c945 p C945 BR c945 IJ11III

lc 945 p transistor NPN TO 92

Abstract: lc 945 p transistor ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications , Breakdown Voltage E to B DC Current Gain Tested) ERICSSON ^ Conditions Ib = 0 A, lc = 5 mA V Be = 0 V , ZLo ad jx -0.4 0.0 0.5 R 9.0 9.0 9.2 jx 6.0 7.5 8.9 2 ERICSSON ^ T yp ica l P erfo
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philips 4859

Abstract: 0Q2SE15 7b0 * A P X - N A ME R PHILIPS/DISCRETE NPN 9 GHz wideband transistor November , 0025217 533 H A P X - N ANER PHILIPS/DISCRETE NPN 9 GHz wideband transistor November , P X l - N AMER PHILIPS/DISCRETE NPN 9 GHz wideband transistor Product , P X N AMER PHILIPS/DISCRETE b7 E D NPN 9 GHz wideband transistor Product specification , ] > NPN 9 GHz wideband transistor BFR505 Table 8 Common emitter scattering parameters, VC = 3 V, lc
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philips 4859 S3T31 D05SB11

lc 945 p transistor NPN TO 92

Abstract: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz , ° C) t stg Symbol VCER v CBO v EBO ic Pd Value 55 55 4.0 7,7 200 1.2 -4 0 to +150 0.85 Rejc 9-45 PTB 20230 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) ERICSSON ^ Conditions
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Abstract: R E T E NPN 9 GHz wideband transistor Product specification b?E P BFG541 M R A 65 S , specification N AUER P H I L IPS/DISCRETE h?E D -BFG541 NPN 9 GHz wideband transistor , NPN 9 GHz wideband transistor BFG541 Table 12 Common emitter scattering parameters, lc = 10 mA , , lc = 20 mA; VC = 8 V E f (MHz) To . p ^mln (dB) (RAT) 900 1.50 0.277 171.0 , LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz -
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DD25034

BFG540

Abstract: transistor N43 0.263 -119.1 7.3 Table 3 Noise data, lc = 10 mA; VC = 4 V E f (MHz) To . p ^mln (dB , Semiconductors â  bbS3T31 002503G 103 H A P X N AUER PHILIPS/DISCRETE b?E NPN 9 GHz wideband transistor , PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES , ' mA p« hF E total power dissipation up to Ts = 35 °C (note 1) lc = 40 mA; VC = 8 V; T, = , PHILIPS/ DIS CRETE b?E NPN 9 GHz wideband transistor Product specification J> -
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transistor N43 0D25011

tam 0340

Abstract: b b 53^31 Philips Semiconductors ⡠⡠31 S 7 S TEb H A P X Product specification PNP 5 GHz wideband transistor 1 DESCRIPTION « N ArlER BFQ51 p h x l x p s / d i s , collector-emitter voltage - -2 5 mA P(ot total power dissipation up to Ts = 155 °C (note 1) - , 564 H A P X BFQ51 PNP 5 GHz wideband transistor bRE D N AMER PHILIPS/BISCRETE MEA347 , transistor N AMER PHILIPS/DISCRETE 0 20 40 60 b'lE T > so G s
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tam 0340 BFR90A 53T31

bt 1690 transistor

Abstract: bt 1696 Philips Semiconductors Product specification PNP 5 GHz wideband transistor P H IL IP S I N T , transition frequency feedback capacitance noise figure up to Ts = 155 °C (note 1) lc = -14 mA; VCE = -10 V; f , transistor P H I L IP S I N T E R N A T I O N A L SbE D 7"* 3 / ¡7 BFQ51 711062b D4S4 bt l 2T4 , Product specification PNP 5 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L 5bE » BFQ51 7 1 1 0 6 2 b 0 0 4 5 4 7 0 Tib P H I N lc = -14 mA; VCE = -10 V; Tarrt) = 25 °C. Fig
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bt 1690 transistor bt 1696 bt 1690 philips of bt 1696 bt 1696 transistor C 3355 transistor 0D454 G0M54

BF547B

Abstract: BFG65 equivalent AMPLIFIERS TYPE NUMBERS GROUPED BY ENVELOPE APPLICATION NPN cascode driver SOT54 (TO-92) BFQ161 , SOT23 1.3 -1 0 -1 5 MPSH3640 MPSH3640 pnp TO-92 1.3 -1 0 -1 5 npn SOT23 0.65 10 4 10 4 BSR12 PMBTH10 - MMBTH10 MPSH10 MPSH10 npn TO-92 , for operating currents (lc) from as low as 0 5 mA up to 240 mA, and operating voltages (VC ) from 3 , TRANSISTORS (fT up to 3.5 GHz) ENVELOPE Me METAL CAN (see Fig.1) TO-39 PLASTIC TO-72 TO-92
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BF547B BFG65 equivalent BF547A transistor bf 175 LCD01

transistor c 6073

Abstract: DD25DS /DISCRETE b?E 3> P NPN 9 GHz wideband transistor BFG541 Table 4 Common emitter scattering parameters, lc = , voltage open collector - 2.5 V lC DC collector current - 120 mA p â tot total power dissipation up to , /DISCRETE b?E T>- NPN 9 GHz wideband transistor BFG541 Table 1 Common emitter scattering parameters, lc = , /DISCRETE b7E NPN 9 GHz wideband transistor BFG541 Table 8 Common emitter scattering parameters, lc = 40 , /DISCRETE b?E D- NPN 9 GHz wideband transistor BFG541 Table 18 Common emitter scattering parameters, lc =
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transistor c 6073 DD25DS BF 331 TRANSISTORS transistor LC 945 ha 1452 Amplifiers 25Q42 E5D33 3D25D3M

dk 2482 h transistor

Abstract: NPN N43 - NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR lc= 10 mA; Vce = 8 V; Zq = 50 Ã2; f = 900 , QOESOSfi SS7 HAPX Product specification N A PIER PHILIPS/DISCRETE b?E P NPN 9 GHz wideband transistor , ^N AMER PHILIPS/DISCRETE b7E NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES , b?E J>- NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR MBB963 , PHILIPS/DISCRETE b7E ]>" Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540
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dk 2482 h transistor NPN N43 dk 2482 transistor BFG540 N43 n37 transistor Code N43 MSB014
Abstract: bbS3131 0D24AA0 0T0 H A P X Philips Semiconductors NPN 6 GHz wideband transistor  , D NPN 6 GHz wideband transistor BFG93A; BFG93A/X; BFG93A/XR 1 VC = 8 V; lc = 30 mA; Z0 = 50 , base 3 emitter DESCRIPTION 4 emitter The BFG93 is a silicon npn transistor in a 4 , collector current P|ol Cre total power dissipation feedback capacitance up to Tâ'ž = 60 °C (note 1 , 3 ^ 3 1 0D54fl61 T37 H A P X Product specification N AMER PHILIPS/DISCRETE b?E T > NPN 6 -
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S3131 MSB035

lc 945 p transistor NPN TO 92

Abstract: 6B2 transistor transistor N AMER PHILIPS/DISCRETE BFQ51 b^E T> DESCRIPTION PNP transistor in a plastic SOT37 envelope , , oscilloscopes, spectrum analyzers, etc. The transistor features extremely high power gain coupled with good low noise performance. NPN complement Is the BFR90A. PINNING PIN DESCRIPTION 1 base 2 emitter 3 , CONDITIONS TYP. MAX. UNIT VCE0 collector-emitter voltage open base - -15 V lc collector current - -25 mA Plot total power dissipation uptoT3= 155 °C (note 1) - 300 mW fT transition frequency lc = -14 mA
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6B2 transistor B 1446 transistor 0031S7

IC 2561 D 431

Abstract: NK 0609 tf PHILIPS/DISCRETE b7E D NPN 6 GHz wideband transistor BFG93A; BFG93A/X; BFG93A/XR In Figs 7 to 10, GUM = , Product specification - N AHER PHILIPS/DISCRETE b7E P NPN 6 GHz wideband transistor BFG93A; BFG93A/X , Philips Semiconductors 0024880 OTO lAPX Product specification NPN 6 GHz wideband transistor , lc DC collector current - 35 mA P.c. total power dissipation up to Ts = 60 °C (note 1) - 300 mW , Product specification N APIER PHILIPS/DISCRETE b7E D - NPN 6 GHz wideband transistor BFG93A; BFG93A/X
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IC 2561 D 431 NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 PHILIPS 550 SOT143

lc 945 p transistor NPN TO 92

Abstract: BLX96 TYPE [ I BLX96 JL U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposes and transmitters , reliability. The transistor has a "/" capstan envelope with a moulded cap. All leads are isolated from the , "c mA Th °C a. &3. P * ro sync W GP dB class-A class-A 860 860 25 25 250 250 25 25 -60 -60 > 0,5 , signal â'"16 dB), zero dB corresponds to peak sync level. MECHANICAL DATA Dimensions in mm Fig. 1 SOT
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blx96a IEC134 s3 vision 0G14D10

transistor bt 808

Abstract: d 5072 transistor - NPN 9 GHz wideband transistor BFR505 Table 2 Common emitter scattering parameters, VCE = 3 V, lc = , > NPN 9 GHz wideband transistor BFR505 Table 10 Common emitter scattering parameters, VCE = 3 V, lc = , - NPN 9 GHz wideband transistor BFR505 Table 14 Common emitter scattering parameters, VCE = 6 V, lc = , b?E D ^ NPN 9 GHz wideband transistor e BFR505 FEATURES â'¢ High power gain â'¢ Low noise figure , specification N AMER PHILIPS/DISCRETE b7E D- NPN 9 GHz wideband transistor BFR505 LIMITING VALUES in
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transistor bt 808 d 5072 transistor bt 7377 2521a S51-P transistor Bf 908 00B5211 IS21I

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the , that you will find The Transistor and Diode Data Book for Design Engineers a useful addition to your , The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245

transistor f6 13003

Abstract: equivalent transistor bj 131-6 . TO-92 variant transistors on ta p e , -39 SOT172A1 SOT128/TO-202 SOT54/TO-92 V(BR)CEO (V) max. lc , Specifications TO-92 variant transistors on tape Soldering recommendations for SOT23, SOT143, SOT223 and , WIDEBAND TRANSISTORS (fT up to 3.5 GHz) ENVELOPE fT/lc CHAR., SEE CHART METAL CAN TO-39 TO-72 SURFACE MOUNT PLASTIC SOT37 TO-92 SOT23 SOT48 BFT24 BFW92 BFS17A BFW93 BF689K
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transistor f6 13003 equivalent transistor bj 131-6 BB112 tunnel diode BFQ25 BU705
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