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lattice LM 45

Catalog Datasheet MFG & Type PDF Document Tags

LED top layer reflector

Abstract: telefunken diodes SI 61 L GaAs­AlAs, GaAs ­ GaP, InP ­ GaP ­ AlP. The bandgap and the lattice constant of Gal-xAlxAs and GaAsl-xPx , dashed line. Up to x = 0.44 (band gap 1.96 eV), Gal-xAlxAs is direct, and the lattice constant changes , lattice constants of InGaAlP are presented. In this diagram, binary compounds are shown as points , diagram shows which InGaAlP compositions are direct and which mixed crystals are lattice matched to a , compositions that are exactly lattice matched to, and can be manufactured on a GaAs substrate. The
Vishay Intertechnology
Original

Vishay diode u60

Abstract: LATTICE 3000 SERIES lattice constant of Gal-xAlxAs and GaAsl-xPx are shown in figure 126. The direct region is shown as a , direct, and the lattice constant changes only slightly over the whole mixture range. The highest direct , . In figure 127, the bandgaps and lattice constants of InGaAlP are presented. In this diagram, binary , are lattice matched to a given substrate material. Both are necessary prerequisites for the , bandgap region shows the compositions that are exactly lattice matched to, and can be manufactured on a
Vishay Semiconductors
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ISP Engineering Kit - Model 100

Abstract: lattice 1024-60LJ prototyping new designs using Lattice Semiconductor Corporation (LSC) in-system programmable Large Scale , production use. The Kit programs devices from the parallel printer port of a host PC using Lattice , download cable with an RJ-45 telephone style connector at each end The connection between the host PC and , MQUAD socket for a particular ispLSI device package). Copyright © 1998 Lattice Semiconductor Corp , specifications and information herein are subject to change without notice. LATTICE SEMICONDUCTOR CORP., 5555
Lattice Semiconductor
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physics

Abstract: lattice LM 45 the lattice constant of Gal-xAlxAs and GaAsl-xPx are shown in figure 2. The direct region is shown , ), Gal-xAlxAs is direct, and the lattice constant changes only slightly over the whole mixture range. The , colors. In figure 3, the bandgaps and lattice constants of InGaAlP are presented. In this diagram , mixed crystals are lattice matched to a given substrate material. Both are necessary prerequisites for , the direct bandgap region shows the compositions that are exactly lattice matched to, and can be
Vishay Semiconductors
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929p

Abstract: Light-emitting diode inp and the lattice constant of Gal-xAlxAs and GaAsl-xPx are shown in figure 2. The direct region is , ), Gal-xAlxAs is direct, and the lattice constant changes only slightly over the whole mixture range. The , colors. In figure 3, the bandgaps and lattice constants of InGaAlP are presented. In this diagram , mixed crystals are lattice matched to a given substrate material. Both are necessary prerequisites for , the direct bandgap region shows the compositions that are exactly lattice matched to, and can be
Vishay Semiconductors
Original
Abstract: Lattice' GAL16VP8 High-Speed E2CMOS PLD Generic Array Logicâ"¢ I ; ; ; S e m ic o n d u c , Open-Drain or Totem-Pole Outputs â'" Active Pull-Ups on All Inputs and I/O pins l/O/Q O LM C O LM C , /Q O LM C. < ^ < ^ DC 5 DC O LM C l/O/Q O LM C l/O/Q O LM C. 8 , Logic â'" Memory Address, Data and Control Circuits â'" DMA Control 8 l/O/Q O LM C. l/O/Q O LM C ELECTRONIC SIGNATURE FOR IDENTIFICATION l/OE Description Pin Configuration The -
OCR Scan
GAL16V8
Abstract: Lattice Semiconductor's advanced E2CMOS process which combines CMOS with Electrically Erasable (E2 , reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice , erase/write cycles and data retention in excess of 20 years are specified. Copyright © 1997 Lattice , holders. The specifications and information herein are subject to change without notice. LATTICE SEM , ; 1-888-ISP-PLDS; FAX (503) 681-3037; http://www.latticesem i.com 16vp8_02 1 July 1997 Lattice -
OCR Scan
AL16VP8
Abstract: LATTICE SEMICONDUCTOR bflE ] > â  SBöbTM'i Q005772 MAI BILAT Lattice GAL16VP8 , time is ideal for Bus and Memory control ap­ plications. The GAL16VP8 is manufactured using Lattice , cells allow complete AC, DC, and functional testing during manufacture. As a result, LATTICE is able to guarantee 100% field programmability and functionality of all GAL products. LATTICE also guarantees 100 erase/rewrite cycles and data retention in excess of 20 years. Copyright © 1994 Lattice -
OCR Scan

GAL20V88

Abstract: GAL20V8A-15LP GAL20V8B GAL20V8A Lattice High Performance E2 CMOS PLD â â â â â â  FU N C TIO , mA Outputs â'" UltraMOS* Advanced CMOS Technology MUX LM - tf- O C â'¢ 50% to 75% REDUCTION , Compatibility * = *- j i O C LM 20 (6 X 40) 4 30G R A M M A B LE A N D -A R R A Y â'¢ ACTIVE PULL-UPS ON ALL PINS (GAL20V8B) ~7 8~ j I O C LM 19 J 1 O C LM 19 -* r [ 1 O C LM 17 p U -i, O C LM 1« â'¢ PRELOAD AND POWER-ON RESET OF ALL REGISTERS â'" 100% Functional
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OCR Scan
GAL20V88 GAL20V8A-15LP

TLMB100

Abstract: light-sensitive resistor GaAs systems pertaining to LEDs are GaAs-AlAs, GaAs - GaP, InP - GaP - A1P. The bandgap and the lattice , lattice constant changes only slightly over the whole mixture range. The highest direct bandgap for GaAs , and lattice constants of InGaAlP are presented. In this diagram, binary compounds are shown as points , diagram shows which InGaAlP compositions are direct and which mixed crystals are lattice matched to a , compositions that are exactly lattice matched to, and can be manufactured on a GaAs substrate. The
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OCR Scan
TLMB100 light-sensitive resistor GaAs telefunken diodes SI 61 L silicon carbide LED
Abstract: '" 5V In-System Programmableâ"¢ (ISPâ"¢) using Lattice ISP or Boundary Scan Test (IEEE 1149.1) Protocol , Options ispDSâ"¢ Software â'" Lattice HDL or Boolean Logic Entry â'" Functional Simulator and Waveform , e in a r e s u b je c t t o c h a n g e w ith o u t n o tic e . LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A. Tel. (503) 681-0118; 1-800-LATTICE; FAX (503) 681-3037; http://www.latticesemi.com 3256a 06 1 July 1997 Lattice Specifications ispLSI -
OCR Scan
160-P

CBT-120

Abstract: PDS-001226 lattice technology for very high surface brightness and uniform emission · Large, monolithic chip with , 60,000 hours PhlatLight® LEDs, based on Photonic Lattice Technology, enable a new class of , Reliability The name PhlatLight is derived from Photonic Lattice. PhlatLight devices use photonic lattice , ready for the most demanding applications. Photonic lattice technology creates true surface emission , % D.F.3 2.6 V 2.6 V V typ 190 825 1400 lm R 1.3 5.5 8.0 W
Luminus Devices
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CBT-120 PDS-001226 LM2500 CBT-120-R-C11 Luminus Devices cbt-120-g-c11

DWG-001216

Abstract: 001216 lattice technology for very high surface brightness and uniform emission · Large, monolithic chip with , ,000 hours PhlatLight® LEDs, based on Photonic Lattice Technology, enable a new class of , solutions. PhlatLight Technology Reliability The name PhlatLight is derived from Photonic Lattice. PhlatLight devices use photonic lattice patterns to extract more light from the LED chip, and to create , . Photonic lattice technology creates true surface emission from the source, which enables large area LED
Luminus Devices
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CBT-90 DWG-001216 001216 DNG14-250FL dj bj 810 NCP15XH103J03RC

CF 775

Abstract: cf775 conductivity package - junction to heat sink thermal resistance of only 1.8 ºC/W · Photonic lattice , hours PhlatLight® LEDs, based on Photonic Lattice Technology, enable a new class of illumination , Reliability The name PhlatLight is derived from Photonic Lattice. PhlatLight devices use photonic lattice , ready for the most demanding applications. Photonic lattice technology creates true surface emission , V 3.0 V V typ 70 270 420 lm r 0.4 1.6 2.3 W 26 20
Luminus Devices
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CF 775 cf775 JC200 CBT-40-G-C21-JC200 HC100 A 1050 09 CBT-40
Abstract: V 4.5 3.6 VF max 5.0 V V 5.3 Luminous Flux ΦV 240 650 930 lm , resistance of only 1.8 ºC/W Bin Codes . . . . . . . . . . . . . . . . . .3 â'¢ Photonic lattice , . Photonic Lattice Technology Reliability Luminusâ'™ photonic lattice technology enables large area LED , arrays of traditional high power LEDs cannot. For red, green and blue LEDs, the photonic lattice , V V 3.0 ΦV typ 70 270 420 lm Φr 0.4 1.6 2.3 W η 26 20 Luminus Devices
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PDS-001229
Abstract: only 0.7 ºC/W â'¢ Photonic lattice technology for very high surface brightness and uniform emission , efficiency. Photonic Lattice Technology Luminusâ'™ photonic lattice technology enables large area LED , arrays of traditional high power LEDs cannot. For red, green and blue LEDs, the photonic lattice , typ 190 825 1400 lm ΦR 1.3 5.5 8.0 W η 26 20 18 lm/W , (lm) 1200 800 600 20 15 10 400 5 200 0 0 0 5 10 15 20 IF (A Luminus Devices
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loadable 4 bit counter

Abstract: Lattice ; Semiconductor I Corporation Features ispLSI and pLSI 6192 High Density Programmable , e h o lde rs. T h e s p e cifica tio n s a n d in fo rm a tio n h e rein a re su b je ct LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A. Tel. (503) 681-0118; 1-800-LATTICE , Lattice ; Semiconductor Corporation Specifications ispLSI and pLSI 6192 Functional Block Diagram , ^ 4bñ3 1L.Q ; ; Semiconductor Corporation Lattice Specifications ispLSI and pLSI 6192
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loadable 4 bit counter 25000-G 6192FF 6192SM 6192DM 6192FF-70LM 6192FF-50LM
Abstract: 2 â'¢ Photonic lattice technology for very high surface brightness and uniform surface emission , solutions that are high brightness and high efficiency. Photonic Lattice Technology Reliability Luminusâ'™ photonic lattice technology enables large area LED chips with uniform brightness over the , , green and blue LEDs, the photonic lattice structures extract more light and create radiation patterns , 2B3 Bin 2C Bin 2D Bin 2E Bin 2F Bin 2G Bin 2H Red Bin Flux Range (lm) 455-475 Luminus Devices
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EU-2002/95/EC PDS-001338

CBT-120

Abstract: junction to heat sink thermal resistance of only 0.7 ºC/W â'¢ Photonic lattice technology for very high , efficiency. Photonic Lattice Technology Luminusâ'™ photonic lattice technology enables large area LED , arrays of traditional high power LEDs cannot. For red, green and blue LEDs, the photonic lattice , Forward Voltage 18 A Continous 2.6 V 2.6 V ΦV typ 190 825 1400 lm ΦR 1.3 5.5 8.0 W η 26 20 18 lm/W Dominant Wavelength λd 622 623
Luminus Devices
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Abstract: '¢ Photonic lattice technology for very high surface brightness and uniform emission Table of Contents , . Photonic Lattice Technology Reliability Luminusâ'™ photonic lattice technology enables large area LED , arrays of traditional high power LEDs cannot. For red, green and blue LEDs, the photonic lattice , 70 270 420 lm Φr 0.4 1.6 2.3 W η 26 20 18 lm/W Dominant , Voltage 12 500 CW Pulsed 450 400 9 300 IF (A) v (lm) 350 250 6 200 150 Luminus Devices
Original
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