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Part : KHB9D5N20P-U/P Supplier : KEC Manufacturer : Ameya Holding Stock : 123,000 Best Price : - Price Each : -
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khb*9D5N20P Datasheet

Part Manufacturer Description PDF Type
KHB9D5N20P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original

khb*9D5N20P

Catalog Datasheet MFG & Type PDF Document Tags

9n90c

Abstract: 9n50c - KHB5D0N20D/I - KHB9D5N20P/F 630 KHB019N20P/F 640 KHB8D8N25P/F BVDSS (V , S2 C3 Q3 IRF BVDSS ID KHB9D5N20P/F D.Y Coil 630 200V 9.0A RDS (ON , 0.013 0.017 10 25 32 10 10 37.5 85 KHB9D5N20P 200 9.5 72 0.29
KEC
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9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c 2N7002 2N7002A 2N7002K KTX421U KTX321U 2N7000

KHB9D5N20F

Abstract: khb*9D5N20P SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast , KHB9D5N20P KHB9D5N20F2 O SYMBOL F CHARACTERISTIC A DIM 200 V Gate-Source Voltage , : 2 1/7 KHB9D5N20P/F/F2 ELECTRICAL CHARACTERISTICS (Ta=25â"ƒ) CHARACTERISTIC SYMBOL TEST , ) Essentially independent of operating temperature. 2008. 12. 19 Revision No : 2 2/7 KHB9D5N20P/F/F2
KEC
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KHB9D5N20F khb*9D5N20P KHB9D5N20P/F/F2

khb*9D5N20P

Abstract: khb9d0n90n KIA7023AT Intergrated Circuit KEC KDZ8.2EV Zener Diode KEC KHB9D5N20P MOSFET KEC
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khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN

oz960

Abstract: khb*9D5N20P KHB9D0N50P KHB9D0N90H KHB9D0N90N KHB9D5N20F KHB9D5N20P KHD0D3N60G KIA1117F00 KIA1117F15 KIA1117F18
KEC
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oz960 MB4213 KIA78*pI MN1280 F10P048 KIA7812A KIA78M05 PQ30RV31 KIA378R00PI LM324/N KIA324P/F TA79005

khb9D5N20P

Abstract: khb*9D5N20P SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES 2008. 12. 19 Revision No : 2 1/7 -
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khb*9D5N20P

Abstract: khb9D5N20P SEMICONDUCTOR KHB9D5N20P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking KHB9D5N 20P 1 515 No. 2 Marking Description Device Name KHB9D5N20P KHB9D5N20P Lot No. 2005. 11. 15 Item 515 Revision No : 1 5 Year 0~9 : 2000~2009 15 Week 15 : 15th Week 1/1 -
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DSA0010427

MN1280

Abstract: KGT50N60kda KIA7023AT Intergrated Circuit KEC KDZ8.2EV Zener Diode KEC KHB9D5N20P MOSFET KEC
KEC
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KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor y4 smd transistor Z02W100V Z02W10V Z02W11V Z02W12V Z02W13V Z02W15V

KIA78*pI

Abstract: transistor SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P This planar stripe MOSFET has better characteristics, such as fast , =25â"ƒ) KHB9D5N20F RATING SYMBOL CHARACTERISTIC KHB9D5N20P KHB9D5N20F UNIT KHB9D5N20F2 Drain-Source , . 12. 19 Revision No : 2 1/7 KHB9D5N20P/F/F2 ELECTRICAL CHARACTERISTICS (Ta , Revision No : 2 2/7 KHB9D5N20P/F/F2 2008. 12. 19 Revision No : 2 3/7 KHB9D5N20P/F/F2
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KIA78*p TRANSISTOR 2N3904 KID65004AF TRANSISTOR mosfet KIA7812API KIA324P KDS160 2N3904 BCV71 KDB2151E KDS160E 2N3904C

khb9D5N20P

Abstract: semiconductor KHB9d5n20f SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast , Q TO-220AB MAXIMUM RATING (Tc=25) KHB9D5N20F RATING C KHB9D5N20F UNIT KHB9D5N20P , C D E F G H J K L M N P Q R S Revision No : 2 1/7 KHB9D5N20P/F/F2 , ) Essentially independent of operating temperature. 2008. 12. 19 Revision No : 2 2/7 KHB9D5N20P/F
KEC
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semiconductor KHB9d5n20f

khb*9D5N20P

Abstract: KHB9D5N20F RDS(ON) Package KHB9D5N20F1 630 200V 9.0A 0.4 TO-220IS KHB9D5N20P1 630
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KF5N50

Abstract: kf12n60 SEMICONDUCTOR KHB9D5N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P1 A This planar stripe MOSFET has better characteristics, such as , KHB9D5N20P1 KHB9D5N20F2 O SYMBOL F CHARACTERISTIC DIM V Gate-Source Voltage VGSS , : 0 1/7 KHB9D5N20P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) SYMBOL , . 5. 10 Revision No : 0 2/7 KHB9D5N20P1/F1/F2 Fig2. ID - VGS VGS TOP : 15.0 V 10.0 V
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KF5N50 kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005