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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

kd transistor smd

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY , speed â'¢ Low profile low inductance SMD-10 Package â'¢ Separated control & Power-connections for easy , = 200V 16 di/dt = 200A/|is See Fig. 17 www.irf.com IRG4ZH71 KD International Ià , Characteristics 3 IRG4ZH71 KD International Ià R Rectifier -6 0 T q , Case Tem perature (° C , IRG4ZH71 KD International Ià R Rectifier 1 00 1000 d if / d t - (A /fjs ) Fig. 15 - -
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IRG4ZH71KD SMD-10
Abstract: , single shot w w w .irf.com IRG4ZC71 KD International Ià R Rectifier Case Outline â'" SMD , Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY , speed â'¢ Low profile low inductance SMD-10 Package â'¢ Separated control & Power-connections for easy , Characteristics 3 IRG4ZC71 KD International Ià R Rectifier C D a> â 2 "ö > E Là O , IRG4ZC71 KD International Ià R Rectifier o d i f / d t - (A /^ is ) Fig. 14 - Typical Reverse -
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IRG4ZC71KD

kd 502

Abstract: kd smd transistor sho t w w w .irf.co m IRG4ZC71 KD International I©R Rectifier Case Outline - SMD , Mountable Short Circuit Rated UltraFast IGBT Vces = 600V INSULATED GATE BIPOLAR TRANSISTOR WITH , lta g e (V ) Fig. 3 - Typical Transfer Characteristics 3 IRG4ZC71 KD International I©R , www.irf.com 5 IRG4ZC71 KD VGE = 2 0V TI = 1 2 5 °C International I©R Rectifier W - / = 100 , International I©R Rectifier IRG4ZC71 KD d if/d t - (A /[js) Fig. 14 - Typical Reverse Recovery vs. dif
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kd 502 kd smd transistor transistor Kd 502 kd transistor smd

Diode SMD ED 9C

Abstract: transistor smd marking Kd Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Technical , connections for the photodiodes and output transistor collectors Truth Table (Positive Logic) Input O , transistor base node connected to improve common mode noise immunity and ESD susceptibility. In addition , plating options, see Selection Guide Table for details. Standard Military Drawing (SMD) parts are , Wing/Soldered Class H SMD Part # Prescript for all below Either Gold or Solder Gold Plate Solder
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Diode SMD ED 9C transistor smd marking Kd LA 5530 HCPL-553X HCPL-653X HCPL-257K HCPL-655X HCPL-550X IL-PRF-38534

t 317 transistor

Abstract: smd diode sm 3c Short Circuit Rated UltraFast IGBT V ces = 1200V INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST , Characteristics 3 IRG4ZH71 KD In te rn a tio n a l I©R R ectifier -60 -40 -20 0 20 40 , IRG4ZH71 KD In te rn a tio n a l I©R R ectifier Fig. 18a - T e st C ircuit fo r M ea sure m ent of I , < 80 ps; du ty fa cto r < 0.1% ® Pulse w idth 5 .Ops, sin gle sho t w w w .irf.com IRG4ZH71 KD In te rn a tio n a l I©R R ectifier Case Outline - SMD-10 Dimensions are shown in m illimeters
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t 317 transistor smd diode sm 3c diode um 42A IOR 451 bjc 2100
Abstract: CM O Kd h 1 ) C P â¡= 2 T GD Å' 3 ND ^BAT c n 4 ^BAT C 5 C 6 ^BAT Å' 7 â'¢' ba t Å , / ^A ^ BT C Å' N C Å' P GD Å' NB Kd Å' j CP Å' T GD Å' ND N.C. Å' N . Å' .C ^ A l=C , operational-amplifier OP, the transistor TL and two resistors (4 £2, 4 k il). June,â"¢ (t) = 1000 * X / L |t (t , transistor TL is â'switched onâ'. If the output current / L e rises to / L e a the current-mirror becomes , transistor TL shows the state of the current-limiter (current-limiting active or not). This state-signal is -
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ITD07385 P-DSO-20-6 P-DSO-20-10

smd transistor 513

Abstract: Package TLE 4267 Q67000-A9153 TLE 4267 G Q67006-A9169 P-T0220-7-3 P-T0220-7-180 SMD) TLE , series transistor via a buffer. Saturation control as a function of the load current prevents any , < ^RT 8 15 25 HA KD= 1.5 V 2.6 3 3.3 V 20 V 2 Delay ms 0.43 , Package Outlines P-T0220-7-3 (Plastic Transistor Single Outline) 4.4 1.3- e IO C N O O O , TLE 4267 Package Outlines (contâ'™d) P-T0220-7-180 (Plastic Transistor Single Outline) 4.4
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smd transistor 513 Q67000-A9246 P-T0220-7-230 T0220-7 AED01988 GPT05167 GPT05887

kd smd transistor

Abstract: » â'¢â'" SPD 28N03L Infineon technologies SIPMOS® Power Transistor Features Product Summary â'¢ N channel Drain source voltage ^DS Drain-Source on-state resistance f à , - 100 SMD version, device on PCB: f f thJA @ min. footprint - - 75 @ 6 cm2 , = 0 V, Kd s = 25 V, f= 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 , Informationâ'. SMD = Surface Mounted Device Data Book 06.99 1060 â  B235bG5 D13377T 7Tb
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SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L

TRANSISTOR SMD MARKING CODE kd

Abstract: BSP 123 Infineon t echnologi es SIPMOS® Small-Signal Transistor â'¢ N channel â'¢ Enhancement mode â'¢ Logic Level â'¢W ) = a8 - 0V 2 Type Vbs b f lDS(on) Package , IEC 68-1 1) Transistor on epoxy pcb 40 mm x 40 mm X K/W 1,5 mm with 6 cm2 copper area for , 207 n 52BSbüS 0132^5°! D 4 S WÃà 06.99 BSP 123 D ra in -so u rc e brea kd o w n , tio n â' . SMD = Surface Mounted Device 1060 Data Book â  B235bG5 D13377T 7Tb 06.99
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TRANSISTOR SMD MARKING CODE kd Q67000-S306 E6327 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777

kd smd transistor

Abstract: smd transistor wc Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ , N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope suitable for surface , Insulated Gate Bipolar Transistor Protected Logic-Level IGBT THERMAL RESISTANCES SYMBOL ^ t h j-m b , Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK866 , (l mb ) IC / A >C LM ICLM / A Sei -clampe d \ ( 0 V C E /V 1!50 O KD dVC E/dt
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smd transistor wc LG Philips LM 300 W 01 SQT404

Diode KD 521 a ANALOG

Abstract: LCD MODULE kp dissipation in the transistor is large. Automotive High Brightness LED Control, Rev. 0 Freescale , loop regulates the current, but in this case, the transistor is being driven in the cutoff and , there is very low power dissipation on the transistor. Figure 6. LED driving example using a , are described. 5.2.1 Buck transistor (Q1) Using the circuit shown in Figure 12, Q1 will be , Freescale Semiconductor Hardware design 5.2.2 Boost transistor (Q2) Q2 will always be open in
Freescale Semiconductor
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AN4105 MC9S08MP16 Diode KD 521 a ANALOG LCD MODULE kp 555 timer for boost converter 339H 335H
Abstract: protection. O u tp u t transistor efficiency is achieved by keeping the sw itch in quasi-saturation w , ). 10 sec. max, 260aC peak Reflow (SMD styles o n ly , i -25 0 25 50 75 O KD 125 150 T em perature (C C) 00 Tem perature , current N PN transistor in its o u tp u t stage. The o u tp u t transistor is sw itched on every 25jis , internal high preci­ sion resistor (0.1112) in the em itter of the o u tp u t transistor appears across -
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CS-3972 20L7S5 D00B2S0 CS-3972DW16 CS-3972T5 CS-3972TV5

AE001

Abstract: AEP01099 low-drop voltage regulator in a P-DSO-20-1 SMD package. The maximum input voltage is 45 V. The maximum , to the output voltage and drives the base of the series transistor via a buffer. Saturation control , / \ i - I P r - . V '- Û V It -. Kd Vm -
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AE001 AEP01099 Q67000-A9095 P-D30-2C AE00109S AED0W87 AED0108B AE0010G9

68w Transistor smd

Abstract: bbc 127 324 DIODE Hermetic SMD PCB 85ºC Hermetic PCB 12.5 x 7.5 x 10 16.0 x 11.0 x 11.5 20.2 x 10 x 10.6 , , Alternate Pin Out Transistor Driver Willow Technologies Limited, Shawlands Court, Newchapel Rd , transient suppresion Transistor Driver, Metal Housing, Custom, Diode for coil mercury wetted , PCB 80ºC Random PCB 90ºC, 100ºC Zero Cross PCB 85ºC 85ºC PCB, SMD PCB, SMD , 1000Gohm 85ºC 85ºC 100ºC 100ºC 100ºC 85ºC 70ºC 70ºC PCB PCB, SMD PCB
Willow Technologies
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HG4100 68w Transistor smd bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor HG4516 HG4507 HG4078B SGR46G 125VAC

transistor smd marking mx

Abstract: Siemens+TDA+2026 Configuration (top view) P-DSO-20-6 Kd cn > CP Å' T GD Å' ND ^BAT ^ ^BAT ^BAT â¡= ^BAT Å , the output current / Ne flowing from RA to m n operational-amplifier OP, the transistor TLand two , of the operational-amplifier OP is equal to the positive OP-supply voltage. The transistor TL is , the n n ,m output current at this level. The voltage level at the gate of transistor TL shows the , Informationâ'. SMD = Surface Mounted Device Semiconductor Group 22 Dimensions in mm 11.95 SIEMENS
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transistor smd marking mx Siemens+TDA+2026 TRANSISTOR SMD MARKING CODE ARB smd marking ARB

BC547 smd

Abstract: 68w Transistor smd generally the need for a group delay compensation circuit (see Figure 5) which implements a transistor Q , uc d Figure 9 Loop Filter VIN Vo (to audio processor) F(p) (from AGC stage) KD , radians/V (typ.) R33 (for left channel) (0) KD DETH R36 bs O DETH is a parameter given in the specification. Lock range = L = KO K KD VO PP 1 = DC gain = (deviation PP K KO ) te , connected at DET Pin. KD : the phase detector gain (in V/radians). KO : slope of the voltage controlled
STMicroelectronics
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BC547 smd theory about transistor bc547 applications 3,58MHZ TDK bc557 SMD ku-band pll lnb SMD BC547 STV0042 STV0056

316 bcg

Abstract: 316 bcg MLX90316 LNR_A_X LNR_A_Y LNR_A_S LNR_B_X LNR_B_Y LNR_B_S LNR_C_X LNR_C_Y LNR_C_S CLAMP_HIGH CLAMP_LOW KD , mode 5, the output stage is an open drain NMOS transistor (low side), to be used with a pull-up , Rotary Position Sensor IC 14.1.4. Switch Out Parameter Value Unit KD 0.359.9999 deg , value stored in the KD parameter. This angle refers to the internal angular reference linked to the
Melexis
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MLX90316 TSSOP16 316 bcg 316 bcg MLX90316 mlx 161.02 marking code E5 SMD ic smd code Hall P2p smd TSSOP-16 ISO14001

TRANSISTOR SMD MARKING CODE kd

Abstract: TESLA MA 1458 LNR_C_X LNR_C_Y LNR_C_S LNR_Y0 LNR_Y1 . LNR_Y16 CLAMP_HIGH CLAMP_LOW KD KDHYST DEADZONE FHYST MELEXISID1 , NMOS transistor (low side), to be used with a pull-up resistor to VDD. In mode 6, the output stage is an open drain PMOS transistor (high side), to be used with a pull-down resistor. In mode 7, the , full description (Section 16). 14.1.4. Switch Out Parameter KD KDHYST Value 0.359.9999 0 . 1.4 Unit , the KD parameter. This angle refers to the internal angular reference linked to the parameter DP and
Melexis
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MLX90324 SAE-J2716 TESLA MA 1458 TRANSISTOR SMD MARKING CODE 8D SAEJ2716 Transistor FIR 3D 41 DBO-000 DBO-100 MLX90324LDC-DBO-100-RE

1OOnf

Abstract: TRANSISTOR FS 2025 technology, the device uses an internal power D-MOS transistor (with a typical Rdson of 0.25i2) to obtain , line, MINIDIP 8 for standard assembly, and S016 for SMD assembly. Vi=8V to o- 55V Ci 220(J.F 63V i , 'ž 20 40 60 80 R1(KD) 6/12 This Material Copyrighted By Its Respective Manufacturer L4978 Figure
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L4978D 1OOnf TRANSISTOR FS 2025 transistor SMD 12E cx 2025 SB560 500KH S016W D37IN787 200KH

TRANSISTOR FS 2025

Abstract: transistor SMD 12E internal power D-MOS transistor (with a typical Rdson of 0.25i2) to obtain very high efficencyand high , assembly, and S016W for SMD assembly. TYPICAL APPLICATION CIRCUIT Vi=8V to o- 55V Ci 220jiF 63V I C7 , 'ž 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 l0(A) 20 40 60 80 R1(KD) ^7/ 5/11 This Material Copyrighted By
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L4976 L4976D SMD transistor 12E smd c8v
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