NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Philips Semiconductors Product specification PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL SLE D BFQ51 BFQ51 711002b 00454L 00454L>7 421 IPHIN DESCRIPTION PNP transistor in a plastic SOT37 envelope. , , oscilloscopes, spectrum analyzers, etc. The transistor features extremely high power gain coupled with good low , PNP 5 GHz wideband transistor 1^3à t7 BFQ51 BFQ51 PHILIPS INTERNATIONAL 5bE T> WÊ 711DfiEb â-¡â-¡M54tfl 3bfi , soldering point up to T, = 155 °C (note 1) 65 K/W Note 1. Ts is the temperature at the soldering point of ... | OCR Scan |
7 pages, |
BFR90A 918 TRANSISTOR PNP k 3436 transistor BFQ51 00454L BFQ51 abstract |
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| Abstract: transistor N AMER PHILIPS/DISCRETE BFQ51 BFQ51 b^E T> DESCRIPTION PNP transistor in a plastic SOT37 envelope. , , oscilloscopes, spectrum analyzers, etc. The transistor features extremely high power gain coupled with good low , Semiconductors H bb53^31 003157 e! 6b2 â- APX Product specification PNP 5 GHz wideband transistor BFQ51 BFQ51 - N AMER , point up toT,= 155 °C (note 1) 65 K/W Note 1. T, is the temperature at the soldering point of the , Semiconductors _ b b 5 3 T 31 DD31S6D DD31S6D 564 H A P X Product specilication PNP 5 GHz wideband transistor BFQ51 BFQ51 N ... | OCR Scan |
7 pages, |
BFR90A BFQ51 B 1446 transistor 6B2 transistor lc 945 p transistor NPN TO 92 0031S7 0031S7 abstract |
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| Abstract: drivers. During a motor pulse the n-channel transistor of one driver and the p-channel transistor of the , voltage Pads' Co-ordinates (-339.7, 273.0) (-339.7, 105.3) (-339.7, -155.5) / (-360.1, -343.6) (88.0 , open or connected to Vdd. Figure 1 : Functional test f = 32768 Hz Rs = 30 k£2 CO = 1.5 pF C1 =3fF CI = ... | OCR Scan |
4 pages, |
10pf trimmer capacitor IC for CMOS Regulator Reset c1923 C1923 transistor Transistor C1923 C1923 C1923 abstract |
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| Abstract: N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad , 3.192 + j3.147 480 2/10 Zin 2.245 - j0.077 3.436 + j1.013 480 1.400 - j3.986 , R4 33 K, 1/8 W RESISTOR C2,C3,C4,C10, C11,C12 0 TO 20pF TRIMMER CAPACITOR Z1 0.175" X , 1,0 K, 1/8 W RESISTOR Z11 0.472" X 0.080" MICROSTRIP ROGER, ULTRA LAM 2000 BOARD ... | Original |
10 pages, |
480M PD54003 PD54003S smd z5 transistor transistor SMD Z2 transistor smd z9 XPD54003 XPD54003S z11 smd transistor 6 pin SMD Z2 SMD Transistor z6 Z9 TRANSISTOR SMD PD54003 abstract |
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| Abstract: DESCRIPTION The FHX35LG FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 5 Input Power (dBm) Ambient Temperature (°K) 3 10 Associated Gain (dB) NF & Gas , -84.0 3.742 103.1 .071 31.8 .462 -71.9 5000 .821 -101.6 3.436 86.6 ... | Original |
6 pages, |
WG 924 lg s12 FHX35LG low noise hemt FHX35LG abstract |
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| Abstract: FEATURES • Low Noise Figure: 1.2B (Typ.)@f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg s 0.25|am, Wg = 280|am • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG/LP FHX35LG/LP is a High Electron Mobility Transistor(HEMT) intended , Temperature (°K) m ;o g 'co O â- o o 4-> CO o o CO CO < OUTPUT POWER vs. INPUT POWER 25 m ;o o 5 o , -71.9 5000 .821 -101.6 3.436 86.6 .079 20.0 .446 -87.6 6000 .783 -117.5 3.132 71.6 .085 9.8 .439 ... | OCR Scan |
7 pages, |
low noise hemt fujitsu hemt FHX35LP FHX35LG FHX35LG/LP FHX35LG/LP abstract |
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| Abstract: DESCRIPTION The FHX35LG FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 5 Input Power (dBm) Ambient Temperature (°K) 3 10 Associated Gain (dB) NF & Gas , .462 -71.9 5000 .821 -101.6 3.436 86.6 .079 20.0 .446 -87.6 6000 ... | Original |
6 pages, |
WG 924 FHX35LP FHX35LG FHX35LG abstract |
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| Abstract: /DISCRETE b7E - NPN 8 GHz wideband transistor S bfK^cX FEATURES • High power gain • Low noise figure • , is a silicon npn transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is available as , and BFG67/XR BFG67/XR) are available upon request. This transistor is designed for wideband applications in , wideband transistor BfWOT^MWCH LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). , RESISTANCE ^th |-9 from junction to soldering point (note 1 ) 290 K/W Note 1. Ts is the temperature at the ... | OCR Scan |
20 pages, |
Transistor MJE 5331 BFG67 BFG67R bfk 0409 BT 816 transistor "CODE V3" transistor bt 808 0458 npn BFQ65 PHILIPS 557 SOT143 bt 1490 transistor Q 371 Transistor TE 555-1 tag 8904 datasheet abstract |
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| Abstract: MOTOROLA SC (XSTRS/R F) bftE D b3t,7SSM GGTÛBS? TD7 MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon , 9. Thermal Response 20 3 0 5.0 I, TIME (msl 200 300 500 1000 MOTOROLA TMOS POWER MOSFET DATA 3-436 , Switching Test Circuit T=rM k* MAX CSOA 1 STRESS AREA Figure 12. Commutating Safe Operating Area Test , V 48 \ / / / / vin = K Vpk- PULSE ... | OCR Scan |
6 pages, |
AN569 221A-06 MTP3055EL datasheet abstract |
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| Abstract: DATA SHEET DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D NE32984D X to Ka BAND SUPER , Frequency - GHz 2 14 20 30 NE32984D NE32984D Gain Calculations MAG. = ~S21~ K= ~S12~ ~S21~ (K r-K2ð1) ~S12~ 1 + ~'~2 ð ~S11~2 ð ~S22~2 2~S12~~S21~ ' = S11 · S22 ð S21 · S12 , .568 ð149.0 3.432 7.2 .089 ð10.1 .343 ð168.6 13.5 .541 ð153.8 3.436 , 14.01 10.97 ð20.54 1.08 .040 23.317 .75 .75 18.0 6 K 12.46 13.93 ... | Original |
12 pages, |
transistor D315 D1770 transistor nec D78 transistor d168 D945 TRANSISTOR D786 D288 d288 nec transistor d468 transistor D331 D734 transistor D468 transistor transistor d407 D1116 NE32984D NE32984D abstract |
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| transistors. By combining the power MOSFETs and the driver circuit into a single component, stray inductances MHz Peak system efficiency >92 pct at 500 kHz High efficiency Low-profile, surface mount 201-12M 201-12M 201-12M 201-12M DC to DC converter powertrain 18-jul-02 Product Specification 20 343.6 www.datasheetarchive.com/files/philips/pip/pip201_12m-02.html |
Philips | 23/04/2003 | 2.86 Kb | HTML | pip201_12m-02.html |
| AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 LDMOS Transistor Model Rev. 01 - 12 document describes the BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 LDMOS transistor model including its installation, usage and verification. NXP Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model © NXP B.V. 2007 Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model Table of contents 1. Introduction .14 NXP Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model © NXP B www.datasheetarchive.com/download/61813360-596980ZC/71691.zip (AN_BLF6G38-50_LDMOS_Transistor_Model.pdf) |
NXP | 23/10/2012 | 57734.64 Kb | ZIP | 71691.zip |
| AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 LDMOS Transistor Model Rev. 01 - 12 document describes the BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 LDMOS transistor model including its installation, usage and verification. NXP Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model © NXP B.V. 2007 Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model Table of contents 1. Introduction .14 NXP Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model © NXP B www.datasheetarchive.com/download/37419629-597065ZC/blf6g38-50_ads_model.zip (AN_BLF6G38-50_LDMOS_Transistor_Model.pdf) |
NXP | 22/10/2012 | 203.84 Kb | ZIP | blf6g38-50_ads_model.zip |
| AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 LDMOS Transistor Model Rev. 01 - 12 document describes the BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 LDMOS transistor model including its installation, usage and verification. NXP Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model © NXP B.V. 2007 Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model Table of contents 1. Introduction .14 NXP Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model © NXP B www.datasheetarchive.com/download/15355188-596976ZC/71129.zip (AN_BLF6G38-50_LDMOS_Transistor_Model.pdf) |
NXP | 23/10/2012 | 56130.47 Kb | ZIP | 71129.zip |
| AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 LDMOS Transistor Model Rev. 01 - 12 document describes the BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 LDMOS transistor model including its installation, usage and verification. NXP Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model © NXP B.V. 2007 Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model Table of contents 1. Introduction .14 NXP Semiconductors AN_BLF6G38-50 BLF6G38-50 BLF6G38-50 BLF6G38-50 BLFG38-50 BLFG38-50 BLFG38-50 BLFG38-50 LDMOS transistor model © NXP B www.datasheetarchive.com/download/22204674-596971ZC/50961.zip (AN_BLF6G38-50_LDMOS_Transistor_Model.pdf) |
NXP | 23/10/2012 | 56632.22 Kb | ZIP | 50961.zip |
| AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS Transistor Model Rev. 01 - 25 , model Abstract This document describes the BLF6G38LS-100 BLF6G38LS-100 BLF6G38LS-100 BLF6G38LS-100 LDMOS transistor model including its transistor model © NXP B.V. 2007. All rights reserved. Application note Rev. 01 - 25-08-2007 2 of 14 Initial revision NXP Semiconductors AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS transistor model . 13 NXP Semiconductors AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS transistor model © NXP B www.datasheetarchive.com/download/61813360-596980ZC/71691.zip (AN_BLF6G38-100_LDMOS_Transistor_Model.pdf) |
NXP | 23/10/2012 | 57734.64 Kb | ZIP | 71691.zip |
| AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS Transistor Model Rev. 01 - 25 , model Abstract This document describes the BLF6G38LS-100 BLF6G38LS-100 BLF6G38LS-100 BLF6G38LS-100 LDMOS transistor model including its transistor model © NXP B.V. 2007. All rights reserved. Application note Rev. 01 - 25-08-2007 2 of 14 Initial revision NXP Semiconductors AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS transistor model . 13 NXP Semiconductors AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS transistor model © NXP B www.datasheetarchive.com/download/22204674-596971ZC/50961.zip (AN_BLF6G38-100_LDMOS_Transistor_Model.pdf) |
NXP | 23/10/2012 | 56632.22 Kb | ZIP | 50961.zip |
| AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS Transistor Model Rev. 01 - 25 , model Abstract This document describes the BLF6G38LS-100 BLF6G38LS-100 BLF6G38LS-100 BLF6G38LS-100 LDMOS transistor model including its transistor model © NXP B.V. 2007. All rights reserved. Application note Rev. 01 - 25-08-2007 2 of 14 Initial revision NXP Semiconductors AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS transistor model . 13 NXP Semiconductors AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS transistor model © NXP B www.datasheetarchive.com/download/15355188-596976ZC/71129.zip (AN_BLF6G38-100_LDMOS_Transistor_Model.pdf) |
NXP | 23/10/2012 | 56130.47 Kb | ZIP | 71129.zip |
| AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS Transistor Model Rev. 01 - 25 , model Abstract This document describes the BLF6G38LS-100 BLF6G38LS-100 BLF6G38LS-100 BLF6G38LS-100 LDMOS transistor model including its transistor model © NXP B.V. 2007. All rights reserved. Application note Rev. 01 - 25-08-2007 2 of 14 Initial revision NXP Semiconductors AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS transistor model . 13 NXP Semiconductors AN_BLF6G38 BLF6G38 BLF6G38 BLF6G38(LS)-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 BLF6G38-100 LDMOS transistor model © NXP B www.datasheetarchive.com/download/66621059-597066ZC/blf6g38ls-100_ads_model.zip (AN_BLF6G38-100_LDMOS_Transistor_Model.pdf) |
NXP | 22/10/2012 | 528.89 Kb | ZIP | blf6g38ls-100_ads_model.zip |
| ST | RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Datasheet RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY PD54003 PD54003 PD54003 PD54003 Document Format Size Raw Text Format 1/10 PRELIMINARY DATA May 2000 PD54003 PD54003 PD54003 PD54003 - PD54003S PD54003S PD54003S PD54003S RF POWER TRANSISTORS -Effect RF power transistor. It is designed for high gain, broad band commercial and industrial .098 2.564 + j0.656 500 1.553 - j1.251 2.661 + j0.139 480 2.245 - j0.077 3.436 + j1.013 D S Typical www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7165.htm |
STMicroelectronics | 20/10/2000 | 11.88 Kb | HTM | 7165.htm |