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Part Manufacturer Description Datasheet BUY
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

k 3436 transistor

Catalog Datasheet MFG & Type PDF Document Tags

618 diode

Abstract: gd 4016 SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N , Produktion der Finalerzeugnisse festgelegt: V e r s o r K u n f t s frist E r z eu gn i s 10 Jahre , letzte planmäßige Importeingangsjahr zugrun de gelegt. W e r k s t a t t l e i t e r ! Bitte informieren , ie b R u n d fu n k und F ern se h e n I 7033 LEIPZIG, B A U SE ST R A SSE 6 I TELEFON 4 4211 , 3436 1,70 Die Ersatzteile Pos. 1 bis Poe. 23 sind identisch mit den Teilen des Autosuper 2108 B 1. Die
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lc 945 p transistor NPN TO 92

Abstract: 6B2 transistor transistor N AMER PHILIPS/DISCRETE BFQ51 b^E T> DESCRIPTION PNP transistor in a plastic SOT37 envelope , , oscilloscopes, spectrum analyzers, etc. The transistor features extremely high power gain coupled with good low , transistor BFQ51 - N AMER PHILIPS/DISCRETE UMITING VALUES In accordance with the Absolute Maximum System , from junction to soldering point up toT,= 155 °C (note 1) 65 K/W Note 1. T, is the temperature at , specilication PNP 5 GHz wideband transistor BFQ51 N AMER PHILIPS/DISCRETE bRE D 400 UEA44Ã
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BFR90A lc 945 p transistor NPN TO 92 6B2 transistor B 1446 transistor C 3355 transistor 0031S7

bt 1690 transistor

Abstract: bt 1696 Philips Semiconductors Product specification PNP 5 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION PNP transistor in a plastic SOT37 envelope. It is primarily , analyzers, etc. The transistor features extremely high power gain coupled with good low noise performance , specification PNP 5 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L 5bE D 7^ 57 BFQ51 , soldering point CONDITIONS up to T , = 155 °C (note 1) THERMAL RESISTANCE 65 K/W Note 1. T, is the
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bt 1690 transistor bt 1696 bt 1690 philips of bt 1696 lc 945 p transistor bt 1696 transistor 0D454 G0M54

k 3436 transistor

Abstract: BFQ51 Philips Semiconductors Product specification PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL SLE D BFQ51 711002b 00454L>7 421 IPHIN DESCRIPTION PNP transistor in a plastic SOT37 , , oscilloscopes, spectrum analyzers, etc. The transistor features extremely high power gain coupled with good low , PNP 5 GHz wideband transistor 1^3í t7 BFQ51 PHILIPS INTERNATIONAL 5bE T> Wà 711DfiEb â¡â¡M54tfl , junction to soldering point up to T, = 155 °C (note 1) 65 K/W Note 1. Ts is the temperature at the
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k 3436 transistor lc 945 transistor 918 TRANSISTOR PNP transistor 3746

NEC Ga FET marking L

Abstract: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE , G . = 1- K = - :- n-:-2 | S12 | | S21 | |S12 IS 2 11 (K ± V k -1 ) A = S i 1 â'¢ S22 - S21 â'¢ S i 2 IS 12 1 NOISE FIGURE , .568 -149.0 3.432 7.2 .089 -10.1 .343 -168.6 13.5 .541 -153.8 3.436 , 22.734 .67 .76 o Delay 6.0 6 K NEC NE32984D NOISE PARAMETER < TY P IC A L
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NEC Ga FET marking L NE32984D-SL NE32984D-T1 NE32984D-T1A P12276EJ2V0DS00 C10535E IR30-00

low noise hemt

Abstract: transistor hemt FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain , Ambient Temperature (°K) Input Power (dBm) 3 FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE , , IDS = 10mA S21 S12 MAG ANG MAG ANG 4.576 4.548 4.471 4.304 4.026 3.742 3.436 3.132 2.881 2.659 2.497
Eudyna Devices
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low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742 2-18GH

FHX35LG

Abstract: FHX35LP DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 5 Input Power (dBm) Ambient Temperature (°K) 3 10 Associated Gain (dB) NF & Gas vs , 5000 .821 -101.6 3.436 86.6 .079 20.0 .446 -87.6 6000 .783 -117.5
Eudyna Devices
Original
FHX35LP WG 924 FHX35

low noise hemt

Abstract: lg s12 DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 5 Input Power (dBm) Ambient Temperature (°K) 3 10 Associated Gain (dB) NF & Gas vs , 103.1 .071 31.8 .462 -71.9 5000 .821 -101.6 3.436 86.6 .079 20.0
Fujitsu
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lg s12 PT 4304 a transistor fujitsu hemt FCSI0598M200

P2T-3

Abstract: k 3436 transistor 3 K 1 PÔ 1 U 13 1 G3 I5 [ 6 12 ) C n . X 11 P3 i ) c n«Y P 1 7 1 e S-3436 10 vss 9 ] c n .2 < o o P2 G2 Cn ® 1/7 799 HCC/HCF40182B FUNCTIO NAL DIAGRAM _ G GÔ - - C gm -k : G2 ?3 -§ c - c ,.x "po - * - c P pT " c n , package) Dissipation per Output Transistor tor T 0p = Full Package-temperature Range Operating Temperature , - _ r C 64-BIT FULL CARRY LOOK-AHEAD ALU IN 3 LEVELS c u 1 - rröm J I LO O K - A H E A O
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P2T-3 HCC/HCF40181B HCC40182B HCF40182B 16-BIT HCFA0181

k 3436 transistor

Abstract: 2 16 3-436 H A -5 14 7 NOTES: 1. Absolut« maximum ratings are limiting values, applied , . 5. Sample tested. 6. V0 LfT " ±10 V - n L 2 K fl 9. 7- VCM - ±10V 8. Full power bandwidth guaranteed based on slew rate measurement using: FPBW Slew Rate 2" v p e a k Refer to Test Circuits section , haracteristics Transistor C o u n t. 63 D ieD
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A7-5147

k 3436 transistor

Abstract: Z9 TRANSISTOR SMD N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad , .451 3.192 + j3.147 480 2/10 Zin 2.245 - j0.077 3.436 + j1.013 480 1.400 - j3 , CHIP CAPACITOR R4 33 K, 1/8 W RESISTOR C2,C3,C4,C10, C11,C12 0 TO 20pF TRIMMER CAPACITOR , " MICROSTRIP R2 1,0 K, 1/8 W RESISTOR Z11 0.472" X 0.080" MICROSTRIP ROGER, ULTRA LAM 2000
STMicroelectronics
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PD54003 PD54003S XPD54003 XPD54003S Z9 TRANSISTOR SMD J210-4 SMD Transistor z6 transistor 6 pin SMD Z2 smd z5 transistor PD5400 SO-10RF SO-10

Transistor NEC K 3654

Abstract: NEC Ga FET marking L DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE , M S G .= r S21 NE32984D S 12 | r K= 1 + I zl I - I S i 1 I - I S2Z 2 | S 12 11S21 MAG. = -n N - (K ± V k2 -1 ) S 12 A = S11 ·S22 - S21 ·S12 NOISE FIGURE, ASSOCIATED GAIN vs , 4.006 3.889 3.830 3.809 3.695 3.746 3.654 3.646 3.534 3.543 3.467 3.459 3.432 3.436 3.425 3.437 3.452 , c y GHz GUmax. dB GAmax. dB I Szi dB |2 I S 12 |2 dB K Delay ns Mason's U
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Transistor NEC K 3654 NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC Ga FET "marking V" P12276EJ2V0D

NEC D288

Abstract: d1397 DATA SHEET DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER , Frequency - GHz 2 14 20 30 NE32984D Gain Calculations MAG. = ~S21~ K= ~S12~ ~S21~ (K r-K2ð1) ~S12~ 1 + ~'~2 ð ~S11~2 ð ~S22~2 2~S12~~S21~ ' = S11 · S22 ð S21 · S12 , .568 ð149.0 3.432 7.2 .089 ð10.1 .343 ð168.6 13.5 .541 ð153.8 3.436 , 14.01 10.97 ð20.54 1.08 .040 23.317 .75 .75 18.0 6 K 12.46 13.93
NEC
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NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC

FHX35LP

Abstract: FHX35LG Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz , -5 400 0 5 Input Power (dBm) Ambient Temperature (¡K) 3 10 Associated Gain , .867 -84.0 3.742 103.1 .071 31.8 .462 -71.9 5000 .821 -101.6 3.436
Fujitsu
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FHX35LG/LP

HA 12045

Abstract: IC 7487 PRELIMINARY DATA SHEET NEC FEATURES NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS (Units in mm) Package O u tlin e TS06 (Top View) LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 , 0.1 * 0.45 i z i = * 0.13 ± 0.0! ~ i 0 - 0.1 k PIN CONFIGURATION (Top View) 6 4 Q1 1 2 , -13.64 -18.91 -23.49 -26.46 -29.65 -31.43 -33.17 -34.36 -35.31 -37.08 -39.70 -41.65 -44.95 -52.82 -65.40
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HA 12045 IC 7487 pin configuration ic 7421 TRANSISTOR 023 3010 k 3531 transistor pt 6964 IS21EI2 UPA826TF-T1

2SC4227

Abstract: 1PW350 Silicon Transistor µ PA812T NPN 2 2SC42272 µ PA812T VHF UHF mm 2 0.2 0.1 -0 4 , Tstg mW 150 -65150 1 110 mW P11465JJ2V0DSJ1 2 December 2000 N CP(K , -177.9 177.6 3.691 3.436 3.310 3.089 2.955 2.859 2.718 2.608 2.389 2.242 2.097 2.024
NEC
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2SC4227 1PW350 PA812T-T1

TP4N50

Abstract: TP4N45 TECHNICAL DATA MOTOROLA Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancem , D ra in -S o u rc e B re a k d o w n V o lta g e (V q s V {B R }D SS M T M /M T P 4 N 4 5 M T M , L e a k a ge Current, Re ve rse m Adc (G S S F - - 100 nAdc Ig ssr 100 , v e ry T im e IN T E R N A L P A C K A G E IN D U C T A N C E (TO-204) Internal D rain Inductance , , 0.25" fro m the p a c k a ge to the so u rc e b o n d pad) I N T E R N A L P A C K A G E IN D U C T A N
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TP4N45 TP4N50 POWER MOSFET 4n45 k 3436 ic MTP4N45 MTP4N50 AN569 MTM/MTP4N45
Abstract: Thickness: 12 k Ã" ± 2 kA Nitride Thickness: 3 .5 kÃ" ±1,5kÃ" METALLIZATION: TRANSISTOR COUNT: Type: Al, 1% C u Thickness: 1 6 k A ± 2 k A 63 SUBSTRATE POTENTIAL (Powered Up): PROCESS , resistances of greater than 10 k il on either input can reduce stability. In most high resistance , VOLTAGE DRIFT vs TEMPERATURE 3-436 FIGURE 6. NOISE CHARACTERISTICS 1M HA-5127, HA-5127 A -
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HA-5127A

k 3531 transistor

Abstract: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF FEATURES · · · · , package style allows for higher density designs. T 0 .6 ± o . i I V5 J k nr IL 4 (Top View , package. ELECTRICAL CHARACTERISTICS PA RT NUMBER P A C K A G E OUTLINE SYM BO LS ICBO (Ta = 25 c , ) Collector Current, Ic (mA) NOISE FIGURE v s. CO L L EC T O R C U R R EN T F E E D B A C K C A P A C IT , -23.49 -26.46 -29.65 -31.43 -33.17 -34.36 -35.31 -37.08 -39.70 -41.65 -44.95 -52.82 -65.40 UPA826TF
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MTP3055EL

Abstract: MTP-3055EL MOTOROLA SC (XSTRS/R F) bftE D b3t,7SSM GGTÛBS? TD7 MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon , MOSFET DATA 3-436 MTP3055EL MOTOROLA SC (XSTRS/R F) bôE D â  b3b72S4 00^0031 M3fi â  MOTb , Switching Test Circuit T=rM k* MAX CSOA 1 STRESS AREA Figure 12. Commutating Safe Operating Area Test , V 48 \ / / / / vin = K Vpk- PULSE
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MTP-3055EL 221A-06 100QC
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