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Part Manufacturer Description Datasheet BUY
34-3625-70 Aries Electronics Inc DIP Connector, 34 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, ROHS COMPLIANT visit Digikey
34-3625-71 Aries Electronics Inc DIP Connector, 34 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, ROHS COMPLIANT visit Digikey
34-3625-10 Aries Electronics Inc DIP Connector, 34 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, ROHS COMPLIANT visit Digikey
34-3625-11 Aries Electronics Inc DIP Connector, 34 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, ROHS COMPLIANT visit Digikey
34-3625-51 Aries Electronics Inc DIP Connector, 34 Contact(s), 2 Row(s), Male, Straight, Wire Wrap Terminal, ROHS COMPLIANT visit Digikey
34-3625-20 Aries Electronics Inc DIP Connector, 34 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, ROHS COMPLIANT visit Digikey

k+3436+transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PT8A2524-26/34-36/44-46 , Power supply 2013-12-0013 PT0266-5 1 01/03/14 PT8A2524-26/34-36/44-46 Universal Timer , -5 2 01/03/14 PT8A2524-26/34-36/44-46 Universal Timer Controller , transistor. After power on, DISC should be active during first 1s before RELAY in order to charge the , 3s to enter into QTM is OFF. 2013-12-0013 PT0266-5 3 01/03/14 PT8A2524-26/34-36/44-46 Pericom Semiconductor
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IN4007 IN4007 DC 8A252 2n5551 128 transistor in4007 PT8A2524-26/34-36/44-46 50/60H PT8A2524/25/34/35/44/45 PT8A2524/5/6A-H PT8A2534/5/6A-H PT8A2544/5/6
Abstract: stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary , -3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz, 5V Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 385mA, T , -3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz, 5V Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 385mA, T , Power Amp Measured 3.4-3.6 GHz, 5V Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 385mA, T=25C) DC , ://www.sirenza.com EDS-104666 Rev F Preliminary SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz, 5V Sirenza Microdevices
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SOF-26 SZP-3026
Abstract: stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary , Power Amp Measured 3.4-3.6 GHz, 5V Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 385mA, T , Amp Measured 3.4-3.6 GHz, 5V Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 385mA, T , -3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz, 5V Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 385mA, T , Power Amp Measured 3.4-3.6 GHz, 5V Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 385mA, T Sirenza Microdevices
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IN4016
Abstract: stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary , -104666 Rev E Preliminary SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz, 5V Application Circuit , -104666 Rev E Preliminary SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz, 5V Application Circuit , ://www.sirenza.com EDS-104666 Rev E Preliminary SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz, 5V , ://www.sirenza.com EDS-104666 Rev E Preliminary SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz, 5V Sirenza Microdevices
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Abstract: ; 28-30; 31-33; 34-36; 37-39; 40-42; 43-45; 46-48, 1.10 ohms max. INDUCTANCE: 1.2mH min., 10kHz, lOOmV, 25-27; 28-30; 31-33; 34-36; 37-39; 40-42; 43-45; 46-48, Ls, 25"C. 0.6mH min., 10kHz, lOOmV, 25-27; 28-30; 31-33; 34-36; 37-39; 40-42; 43-45; 46-48, Ls, -40°C. LEAKAGE INDUCTANCE: 0.8uH max., 100kHz, lOOmV, l-3 (tie 46+48); 7-9(tie 40+42); 13-15(tie 34+36); 19-21(tie 28+30), Ls. 0.5uH max., 100kHz, lOOmV, 4-6(tie -
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TE 1809 1500VAC 1875VAC P0640SC 52081R-LF3
Abstract: stage class AB Heterojunction Bipolar Transistor (HBT) housed in a proprietary surface-mountable plastic , ://www.sirenza.com EDS-104666 Rev A Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz , Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V , ://www.sirenza.com EDS-104666 Rev A Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz , EDS-104666 Rev A Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Sirenza Microdevices
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Abstract: stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary , -104666 Rev C Preliminary SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data , SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq , EDS-104666 Rev C Preliminary SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application , -104666 Rev C Preliminary SZP-3026Z 3.0-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data Sirenza Microdevices
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Abstract: ; 28-30; 31-33; 34-36; 37-39; 40-42; 43-45; 46-48, 1.10 ohms max. .712 REF. [1 8 .0 9 ] ÜLi'r c H , 738 ] .047 701 0(4 8) [1 .1 9 725] LOT CODE & DATE CODE INDUCTANCE: 1.2mH 34-36; 0.6mH 34-36 , , lOOmV, l- 3 (tie 46+48); 7 -9 (tie 40+42); 13-15(tie 34+36); 19-21(tie 28+30), Ls. 0.5uH max., 100kHz -
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52149R-LF3
Abstract: stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary , Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C) Source , Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = , Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C) DC Supply , -3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T Sirenza Microdevices
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Abstract: -69 Iâ'" i "1 (i7-7) r .48 (12.1) .22 (5.6) MAX. TO ACCEPT .04â'".06 (1.0-1.5) THICK TAB .39 (10.0) HOLE EOR #6 SCREW .135-.141 (3.4-3.6) DIA. 16 (4.0) MIN. 25 (6.4) MIN. NOTES: 1. MAT'L: GLASS FILLED NYLON (RMS-18) 2. COLOR: BLACK CHANGED FILE NO. SM b4.01.02l DESCRIPTION ENGRl DATE TITLE: transistor insulators DWG IN IN (MM) -
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Richco DT1101
Abstract: J IO T /R E C E S S -7 4 0 B rr LOCATES TERM, .8 5 2 ± . 0 1 5 [2 1 .6 4 ± .3 8 ] |sU JL pH@ ELECTRICAL SPECIFICATIONS @ 25°C u n less otherw ise noted: D.C. RESISTANCE (®20"C):4-6; 10-12; 16-18; 22-24, 0.40 ohms max. 1-3; 7-9; 13-15; 19-21, 0.80 ohms max. 25-27; 28-30; 31-33; 34-36; 37-39; 40-42; 43-45; 46-48, 1.10 ohms max. INDUCTANCE: 1.2mH 34-36; 0.6mH 34-36; min., 10kHz, lOOmV , ., 100kHz, lOOmV, l-3 (tie 46+48); 7-9(tie 40+42); 13-15(tie 34+36); 19-21(tie 28+30), Ls. 0.5uH max -
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A 4042 B 52149R
Abstract: Centre, 34-36 Au Pui Wan Street, Fotan, Shatin, N.T., Hong Kong Tel: 852-26090123 Fax: 852-2609-0199 , PRO-AN Electronic Co., Ltd. Address: Room 3., Block A, 1/F., Veristrong Industrial Centre, 34-36 Au Pui , , 1/F., Veristrong Industrial Centre, 34-36 Au Pui Wan Street, Fotan, Shatin, N.T., Hong Kong Tel , ., Ltd. Address: Room 3., Block A, 1/F., Veristrong Industrial Centre, 34-36 Au Pui Wan Street, Fotan PRO-AN Electronic
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RC06 series RC05 resistor RC05 RESISTANCE RC05 KOME RC05 RC-05K 100PPM/ 250PPM/ RC-02 RC-03 RC-05 RC-06
Abstract: 3436 1,70 Die Ersatzteile Pos. 1 bis Poe. 23 sind identisch mit den Teilen des Autosuper 2108 B 1. Die , Transistor KP 124B, T1.T3 Transistor KF 124C, T2,T4 Transistor KC 148, T5 blau Transist01 KC 148, T6 grau , B "Spider 3" Transistor KP 124 B KP 124 C KC 148 2-AD 162 2-GD 168 2-GD 618 Diode GA 201 KA 261 -
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618 diode 3D24N gd 4016 transistor kp 455-A6 radio fernsehen elektronik GD-180
Abstract: Industrial Centre, 34-36 Au Pui Wan Street, Fotan, Shatin, N.T., Hong Kong Tel: 852-26090123 Fax , , 34-36 Au Pui Wan Street, Fotan, Shatin, N.T., Hong Kong Tel: 852-26090123 Fax: 852-2609-0199 E-mail , Electronic Co., Ltd. Address: Room 3., Block A, 1/F., Veristrong Industrial Centre, 34-36 Au Pui Wan Street , : Room 3., Block A, 1/F., Veristrong Industrial Centre, 34-36 Au Pui Wan Street, Fotan, Shatin, N.T , A, 1/F., Veristrong Industrial Centre, 34-36 Au Pui Wan Street, Fotan, Shatin, N.T., Hong Kong Tel PRO-AN Electronic
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varistors jvr JVR- KOME
Abstract: LT®3436 is an 800kHz monolithic boost switching regulator. A high efficiency 3A, 0.1 switch is , B220A 3436 TA01 0 0.1 0.2 0.3 0.4 0.5 0.6 LOAD CURRENT (A) 0.7 0.8 3436 TA01b , ) 1.34 10 8 6 4 1.32 0 75 100 125 TEMPERATURE (°C) 3436 G04 50 75 100 , 1.38 1.36 0 ­12 12 SHDN THRESHOLD (V) 740 3436 G03 14 25 770 3436 G02 1.40 0 800 TEMPERATURE (°C) 3436 G01 1.30 ­50 ­25 830 680 ­50 ­25 0 0 860 Linear Technology
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LT3436 TSSOP-16 k 3436 ic 593D DO1608C-222 how to stepup 0.5v to 5v k 3436 transistor LT1613 LT1618 LT1946/LT1946A LT1961
Abstract: , 34-36 Au Pui Wan Street, Fotan, Shatin, N.T., Hong Kong Tel: 852-26090123 Fax: 852-2609-0199 E-mail , . Address: Room 3., Block A, 1/F., Veristrong Industrial Centre, 34-36 Au Pui Wan Street, Fotan, Shatin, N.T , ., Veristrong Industrial Centre, 34-36 Au Pui Wan Street, Fotan, Shatin, N.T., Hong Kong Tel: 852-26090123 Fax , ., Block A, 1/F., Veristrong Industrial Centre, 34-36 Au Pui Wan Street, Fotan, Shatin, N.T., Hong Kong PRO-AN Electronic
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RC05K RESISTOR RC05 rc-06 1206 RC-12 RC-20 RC-25
Abstract: transistor N AMER PHILIPS/DISCRETE BFQ51 b^E T> DESCRIPTION PNP transistor in a plastic SOT37 envelope , , oscilloscopes, spectrum analyzers, etc. The transistor features extremely high power gain coupled with good low , transistor BFQ51 - N AMER PHILIPS/DISCRETE UMITING VALUES In accordance with the Absolute Maximum System , specilication PNP 5 GHz wideband transistor BFQ51 N AMER PHILIPS/DISCRETE bRE D 400 UEA44Ã , Semiconductors â  bbS3T31 DOBlSfl 1 41 â¡ BAPX Product specification PNP 5 GHz wideband transistor BFQ51 - N A -
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BFR90A lc 945 p transistor NPN TO 92 6B2 transistor B 1446 transistor C 3355 transistor 0031S7
Abstract: -16 Package The LT®3436 is an 800kHz monolithic boost switching regulator. A high efficiency 3A, 0.1 switch , CURRENT IS SUBJECT TO THERMAL DERATING. 3436 TA01 U Efficiency vs Load Current 90 85 80 75 70 65 60 VIN = 5V VOUT = 12V 0 0.1 0.2 0.3 0.4 0.5 0.6 LOAD CURRENT (A) 0.7 0.8 3436 TA01b U 3436f , (°C) 3436 G01 SHDN Threshold 1.40 14 12 1.38 SHDN THRESHOLD (V) VIN CURRENT (uA) SHDN INPUT CURRENT (uA) 1.36 1.34 1.32 2 1.30 ­50 ­25 0 0 25 50 75 100 125 0 5 TEMPERATURE (°C) 3436 G04 Linear Technology
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Hughes 3121H-P laser LXHL-LW6C 3121h-p CDC5D23 V3436 voltage regulator 12v to 6V 2a 1N4002 ZTX849 MKP-20 SEMTECH-FM-50 3121H-P
Abstract: LT3436 3A, 800kHz Step-Up Switching Regulator U FEATURES DESCRIPTIO The LT®3436 , . EFFICIENCY (%) 85 B220A 60 3436 TA01 0 0.1 0.2 0.3 0.4 0.5 0.6 LOAD CURRENT (A) 0.7 0.8 3436 TA01b 3436fa 1 LT3436 W U U U W W W ABSOLUTE MAXIMUM , 75 100 125 TEMPERATURE (°C) 3436 G04 50 75 100 125 ­10 SHUTTING DOWN ­8 , SHDN THRESHOLD (V) 740 3436 G03 14 25 770 3436 G02 1.40 0 800 TEMPERATURE Linear Technology
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B130A LXHL-PW09 LT3436EFE LXHL-PW03 3436EFE 1N4002 diode download datasheet LTC3400/LTC3400B LTC3401 LTC3402
Abstract: Philips Semiconductors Product specification PNP 5 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION PNP transistor in a plastic SOT37 envelope. It is primarily , analyzers, etc. The transistor features extremely high power gain coupled with good low noise performance , specification PNP 5 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L 5bE D 7^ 57 BFQ51 , transistor P H I L IP S I N T E R N A T I O N A L SbE D 7"* 3 / ¡7 BFQ51 711062b D4S4 bt l 2T4 -
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bt 1690 transistor bt 1696 bt 1690 philips of bt 1696 lc 945 p transistor bt 1696 transistor 0D454 G0M54
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