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M550B688M008AH KEMET Corporation Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 8V, 20% +Tol, 20% -Tol, 6800uF, Chassis Mount, RADIAL LEADED visit Digikey Buy
M551B688K008AA KEMET Corporation CAP TANT POLY 6800UF 8V CHA MNT visit Digikey Buy
M550B688M008AT KEMET Corporation Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 8V, 20% +Tol, 20% -Tol, 6800uF, Chassis Mount, RADIAL LEADED visit Digikey Buy
M550B688M008AG KEMET Corporation CAP TANT POLY 6800UF 8V CHA MNT visit Digikey Buy
M551B688M008AS KEMET Corporation Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 8V, 20% +Tol, 20% -Tol, 6800uF, Chassis Mount, RADIAL LEADED visit Digikey Buy
M551B688K008AS KEMET Corporation Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 8V, 10% +Tol, 10% -Tol, 6800uF, Chassis Mount, RADIAL LEADED visit Digikey Buy

k B688

Catalog Datasheet MFG & Type PDF Document Tags

B688

Abstract: k B688 SEMICONDUCTOR KTB688 MARKING SPECIFICATION TO-3P(N) PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B688 O 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name B688 KTB688 3 hFE Grade O R,O 4 Lot No. 816 8 Revision No : 00 0 ~ 9 : 1900~1999 16 98.06.23 Year Week 16 : 16th Week 1/1 KEC
KEC
Original
B688 k B688 kb688 k b688 0 kec b688 B-6-88

B688

Abstract: k B688 003a a b688 50 I T(RMS ) (A) 40 30 8 20 4 10 0 -50 0 50 100 150 T mb (°C) 0 , ; Fig. 6 half cycle; Fig. 6 in free air Min Typ 60 Max 1.5 2 Unit K/W K/W K/W Rth(j-a) BTA312 , -800CT 3Q Hi-Com Triac 10 Zth(j-mb) (K/W) 1 (1) 003aab775 10-1 (2) 10-2 PD 10-3 10-5
NXP Semiconductors
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BTA312-800CT

k B688

Abstract: k b688 0 003a a f738 Unit A s A/µs A W W °C °C 2 over any 20 ms period -40 - 003a a b688 50 I T , printed circuit board mounted; minimum footprint Min Typ 55 Max 1.5 2 Unit K/W K/W K/W Rth(j-a , BTA312B-800ET 3Q Hi-Com Triac 10 Zth(j-mb) (K/W) 1 (1) 003aab775 10-1 (2) 10-2 PD
NXP Semiconductors
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k B688

Abstract: junction temperature - 150 °C 2 2 over any 20 ms period 003a a b688 16 2 , resistance from junction to mounting base full cycle - - 1.5 K/W half cycle - - 2 K/W thermal resistance from junction to ambient in free air - 60 - K/W
NXP Semiconductors
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BTA312-600CT

B688

Abstract: k B688 any 20 ms period -40 - 003a a b688 50 I T(RMS ) (A) 40 30 8 20 4 10 0 -50 0 50 , ; Fig. 6 half cycle; Fig. 6 printed circuit board mounted; minimum footprint Min Typ 55 Max 1.5 2 Unit K/W K/W K/W Rth(j-a) BTA312B-600CT All information provided in this document is subject to , / 12 NXP Semiconductors BTA312B-600CT 3Q Hi-Com Triac 10 Zth(j-mb) (K/W) 1 (1) 003aab775
NXP Semiconductors
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k B688

Abstract: k b688 0 period -40 - 003a a b688 50 I T(RMS ) (A) 40 30 8 20 4 10 0 -50 0 50 100 150 T , ambient Conditions full cycle; Fig. 6 half cycle; Fig. 6 in free air Min Typ 60 Max 1.5 2 Unit K/W K/W K/W , Semiconductors BTA312-800ET 3Q Hi-Com Triac 10 Zth(j-mb) (K/W) 1 (1) 003aab775 10-1 (2) 10-2
NXP Semiconductors
Original

k B688

Abstract: junction temperature - 150 °C 2 2 over any 20 ms period 003a a b688 16 2 , resistance from junction to mounting base full cycle; Fig. 6 - - 1.5 K/W half cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 003aab775 10 Zth(j-mb) (K/W) 1 (1) 10-1 (2) PD 10-2
NXP Semiconductors
Original
Abstract: D2 PA K BTA312B-800ET 3Q Hi-Com Triac 6 August 2014 Product data sheet 1. General , period 003a a b688 16 2 003a a f738 50 I T(RMS ) (A) I T(RMS ) (A) 40 12 30 , cycle; Fig. 6 - - 1.5 K/W half cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient printed circuit board mounted; minimum footprint - 55 - K/W Rth(j-a) 003aab775 10 Zth(j-mb) (K/W) 1 (1) 10-1 (2) PD 10-2 10-3 10-5 tp NXP Semiconductors
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Abstract: D2 PA K BTA312B-600CT 3Q Hi-Com Triac 25 July 2014 Product data sheet 1. General , over any 20 ms period 003a a b688 16 2 003a a f738 50 I T(RMS ) (A) I T(RMS ) (A , cycle; Fig. 6 - - 1.5 K/W half cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient printed circuit board mounted; minimum footprint - 55 - K/W Rth(j-a) 003aab775 10 Zth(j-mb) (K/W) 1 (1) 10-1 (2) PD 10-2 10-3 10-5 tp NXP Semiconductors
Original
Abstract: junction temperature - 150 °C 2 2 over any 20 ms period 003a a b688 16 2 , resistance from junction to mounting base full cycle; Fig. 6 - - 1.5 K/W half cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 003aab775 10 Zth(j-mb) (K/W) 1 (1) 10-1 (2) PD 10-2 NXP Semiconductors
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b688

Abstract: k B688 ; dIG/dt = 0.2 A/µs A s A/µs A W W °C °C over any 20 ms period -40 - 003a a b688 50 I T , Typ 60 Max 1.5 2 Unit K/W K/W K/W Rth(j-a) 6. Characteristics Table 6. Symbol IGT
NXP Semiconductors
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F738
Abstract: 20 ms period 003a a f738 50 I T(RMS ) (A) 003a a b688 16 I T(RMS ) (A) 40 12 30 , - - 1.5 K/W half cycle; see Figure 6 - - 2 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 003aab775 10 Zth(j-mb) (K/W NXP Semiconductors
Original

k B688

Abstract: b688 - 150 °C over any 20 ms period 003a a f738 50 I T(RMS ) (A) 003a a b688 16 I , full cycle; see Figure 6 - - 1.5 K/W half cycle; see Figure 6 - - 2 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 003aab775 10 Zth(j-mb) (K/W) 1 (1) 10-1 (2) PD 10-2 tp 10-3 10-5 10-4 10-3
NXP Semiconductors
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D49E

Abstract: C886 2A [03] -[0d] 7[17] A[21] K[2b] U[35] _[3f] i[49] s[53] }[5d] $[04] .[0e] 8[18] B[22] L[2c] V[36] `[40] j[4a] t[54] ~[5e] %[05] /[0f] 9[19] C[23] M[2d] W[37] a[41] k[4b] u
Jinan YIAN Electronics
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D49E C886 2A E09A 81aa s m b692 B088 A992 EA200

bcm 4330

Abstract: telemecanique contactor catalogue ! micro nano pico 10 10 10(6) 10 to 1Q('3> 10
Schneider Electric
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bcm 4330 telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO