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CTJ122E05E-513 TE Connectivity Ltd MODULE ASSY visit Digikey
V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
HIP6601BECBZA Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HIP6603BECBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ICL7667CBAZA-T Intersil Corporation Dual Power MOSFET Driver; PDIP8, SOIC8; Temp Range: 0° to 70° visit Intersil Buy

j122 mosfet

Catalog Datasheet MFG & Type PDF Document Tags

20c15

Abstract: mosfet j122 AD421 DAC NPN NPN Q1( MOSFET DN25D) AD421 AD421 5 V 3.3 V 3 V MOSFET Q1 LK1 LK2 LK3 (Q2) LOOP RTN 40 DAC AD421-20C15 80 k MOSFET AD421 AD421 Q2 BOOST BOOST COM U3 , -20 28F0195-100 R14 732k J1-21 J1-22 J1-23 J1-25 C15 6.2nF C21 1000pF C20 1000pF R13 825k
Analog Devices
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AN-534 SYM20C15 74HC4050 20c15 mosfet j122 Symbios Logic 20c15 J120 MOSFET j122 mosfet 20C15 1200H 2200H BC548

74HC14

Abstract: mosfet j117 Slide switch 2 Logic-level, P-channel, SO-8, single power MOSFET International Rectifier IRF7205 , - MOSFET M1 1016 Clear Counters() MAX1660 Integration Time() Automatically Update Displays , Windows DOS1660.EXE _ U1(MAX1660) C6 C1R1 R3R6 MOSFET M1 M2D 1R 1 1 , INT +3V Evaluates: MAX1660 J1­1 J1­22 J1­18 MAX1660 1. MAX1660 EV
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MAX1660EVKIT 2N3904 74HC14 mosfet j117 J117 MOSFET 2N3904 j19 2n3904 j16 2n3904 j17 MAX16608 1N4148- 1N5233B- LR2512-01-R030-F

FERROXCUBE VK200

Abstract: motorola zener MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed primarily fo r wideband large-signal output and driver from 3 0 -5 0 0 MHz. · · Low Crss - 4.5 pF @ V p s = 28 V MRF166C - Typical Performance at 400 , MOSFET BROADBAND RF POWER FETs · · · · · MAXIMUM RATINGS Rating Drain-Gate Voltage Drain-Gate , Power 25 mA, ^in - - 3.99 - j12.2 14.15-j6.51 - - Ohms Ohms lD Q = ID q = 25 mA) ^out
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OCR Scan
DV2820 SD1902 FERROXCUBE VK200 motorola zener vk200 VK200-19 VK-200-19 MRF166 MRF136 BLF244 ST1001

20c15

Abstract: SYM20C15 transistor Q1 (DN25D depletion mode MOSFET), in association with the internal op amp and voltage reference on , external pass transistor (Q2) is added to reduce the power loading on the depletion mode MOSFET Q1 , output and loop return. The MOSFET supplies the quiescent current for the AD421. The BOOST pin on the , -19 J1-20 28F0195-100 R14 732k J1-21 J1-22 J1-23 J1-25 C19 220pF C15 6.2nF R13
Analog Devices
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20c15 Hart Modem HART BELL 202 hart protocol hart depletion mode mosfet J119 transistor E3297 J1-18 J1-19 AD589 J1-24

J133 mosfet transistor

Abstract: J104 MOSFET MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large­signal , 2 W PEP f MHz 925 960 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15.9 Transistor 3 ZOL* 23.1 ­ j6
Motorola
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J133 mosfet transistor J104 MOSFET mosfet j133 J122 transistor transistor z5 9601 mosfet

mosfet j122

Abstract: j122 mosfet International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique , die. Modified MOSFET symbol showing the internal device inductances. Lg internal Source Inductance , ) IRFJ120 IRFJ121 - - 8.0 A Modified MOSFET symbol T-39â'"11 showing the intégrât reveise P-N junction , RFJ12 0,121. :J122, 25 50 125
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OCR Scan
IRFJ122 IRFJ123 transistor j122 J122 9401A 2s j122 IRF 543 MOSFET CI-040 G-515 T-39-11 G-518 RFJ120

J133 mosfet transistor

Abstract: transistor j239 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large­signal , .5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15
Motorola
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transistor j239 J143 MOSFET J239 mosfet transistor J133 transistor J133 MOSFET J239 TRANSISTOR
Abstract: MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor , should be observed. AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary , Sheet November 2003 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test , Inc. 3 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data , Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0 Agere Systems
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AGR09085EU AGR09085EF DS04-055RFPP DS04-028RFPP

mosfet j122

Abstract: AGR09085EF AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1 , MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating , -895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E R3 VGG R4 C25 , . AGR09085E Test Circuit AGR 09085 E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Typical , Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0.82 1.69 + j1.14 GATE (2) ZS
TriQuint Semiconductor
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J118 MOSFET JESD22-C101A RM73B2B120J IS-95

J118 MOSFET

Abstract: j122 mosfet , Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage , MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet January 2003 Electrical , E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R1 C17 C18 C19 C20 C21 C22 , MOSFET Preliminary Data Sheet January 2003 Typical Performance Characteristics 0.12 07 0 , Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­
Agere Systems
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JESD22-A114 gl 3201 DS01-209RFPP

J127 mosfet

Abstract: MOSFET J132 Taiyo Yuden LMK432BJ226K C2 1 1µF ceramic capacitor U1 1 N- and P-channel MOSFET (SO , Coiltronics UP4-R47 (0.47µH) or Panasonic ETQP1F0R7H (0.7µH) N1, N2 2 N-channel MOSFET (D2PAK , ­21 J1­22 4.5V TO 5.5V REF 16 17 5 6 7 10 2 8 20 D4 D3 D2 D1
Maxim Integrated Products
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IRF7105 J127 mosfet MOSFET J132 mosfet J137 J132 MOSFET PC MOTHERBOARD FDB7030L 512 j122 MAX1638VRM MAX1638 MAX1638VRMEVKIT C4532X5RA226M

transistor A113

Abstract: a113 transistor Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. Rev. 5, 1/2005 MRF9002R2 1000 MHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for , = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3
Freescale Semiconductor
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transistor A113 a113 transistor transistor marking z11 c series transistor equivalent table marking j9

AGR09085E

Abstract: AGR09085EF MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally , , N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet May 2004 Electrical Characteristics , Sheet May 2004 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit , Agere Systems Inc. 3 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET , ) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0.82 1.69 + j1.14 GATE (2) ZS
Agere Systems
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ne 22 mosfet DS04-199RFPP DS04-152RFPP

J132 MOSFET

Abstract: J127 mosfet power inductor Coiltronics UP4-R47 (0.47µH) or Panasonic ETQP1F0R7H (0.7µH) N-channel MOSFET (D2PAK , Taiyo Yuden LMK432BJ226K 1µF ceramic capacitor N- and P-channel MOSFET (SO-8) International Rectifier , C3 220µF 10V VIN VIN VIN VIN VIN J1­1 J1­2 J1­3 J1­21 J1­22 9 20 VDD DH R2 0.009 8 LG LX DL
Maxim Integrated Products
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J137 MOSFET D4126 LG LX 10SA220M 4SP220M 595D106X0010A 595D475X0016A2T C3216X7R1C225M
Abstract: , N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal , AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet November 2003 , E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R4 C25 C24 R3 FB1 R2 C23 C12 C11 , ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0 , , N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet November 2003 8 0.2 0. 4 0.3 Agere Systems
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DS03-057RFPP

mosfet j122

Abstract: J118 MOSFET AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is , should be observed. AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Electrical , , 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R4 , -895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.11 0.12 0.38 , ) 895 (f3) ZS ZL (Complex Source Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22
PEAK Devices
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ALT500

z921

Abstract: , N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal , AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet September 2003 , E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R4 C25 C24 R3 FB1 R2 C23 C12 C11 , (Complex Source Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + , E-Mode, Lateral MOSFET Preliminary Data Sheet September 2003 8 0.2 0. 4 0.3 0.2
Agere Systems
Original
z921

AGR09085EF

Abstract: AGR09085E MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally , MOSFET Preliminary Data Sheet April 2004 Electrical Characteristics Recommended operating , , 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E R3 , Systems Inc. 3 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary , Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0.82 1.69 + j1
Agere Systems
Original

EF125WT1

Abstract: AN-1850 EF125WT1 5 LME49830 AGND +12V160AJ11 J122.6V5V RM2 www.national.com , 1/(2CI1RI) (Hz) -3 dB2.9 Hz CI1RICI2CI36 BJTMOS MOSFET MOS MOS 3 LME49830
National Semiconductor
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AN-1850 LME49830TB ic 062c 2sk1058 2SJ162 062C AN1850 A200V LME498301 LME49830MOS 16VLME49830

J133 mosfet transistor

Abstract: transistor 955 MOTOROLA MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this , 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15.9 Transistor 3 ZOL* 23.1 ­ j6.5 22.8 ­ j8.4 22.6 ­ j9.3 Z
Motorola
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transistor 955 MOTOROLA
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