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HIP6601BCBZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
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ISL6609AIRZ Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609IBZ Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

j122 mosfet

Catalog Datasheet MFG & Type PDF Document Tags

20c15

Abstract: mosfet j122 AD421 DAC NPN NPN Q1( MOSFET DN25D) AD421 AD421 5 V 3.3 V 3 V MOSFET Q1 LK1 LK2 LK3 (Q2) LOOP RTN 40 DAC AD421-20C15 80 k MOSFET AD421 AD421 Q2 BOOST BOOST COM U3 , -20 28F0195-100 R14 732k J1-21 J1-22 J1-23 J1-25 C15 6.2nF C21 1000pF C20 1000pF R13 825k
Analog Devices
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AN-534 SYM20C15 74HC4050 20c15 mosfet j122 Symbios Logic 20c15 J120 MOSFET j122 mosfet 20C15 1200H 2200H BC548

74HC14

Abstract: mosfet j117 Slide switch 2 Logic-level, P-channel, SO-8, single power MOSFET International Rectifier IRF7205 , - MOSFET M1 1016 Clear Counters() MAX1660 Integration Time() Automatically Update Displays , Windows DOS1660.EXE _ U1(MAX1660) C6 C1R1 R3R6 MOSFET M1 M2D 1R 1 1 , INT +3V Evaluates: MAX1660 J1­1 J1­22 J1­18 MAX1660 1. MAX1660 EV
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MAX1660EVKIT 2N3904 74HC14 mosfet j117 J117 MOSFET 2N3904 j19 2n3904 j16 2n3904 j17 MAX16608 1N4148- 1N5233B- LR2512-01-R030-F

FERROXCUBE VK200

Abstract: motorola zener MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed primarily fo r wideband large-signal output and driver from 3 0 -5 0 0 MHz. · · Low Crss - 4.5 pF @ V p s = 28 V MRF166C - Typical Performance at 400 , MOSFET BROADBAND RF POWER FETs · · · · · MAXIMUM RATINGS Rating Drain-Gate Voltage Drain-Gate , Power 25 mA, ^in - - 3.99 - j12.2 14.15-j6.51 - - Ohms Ohms lD Q = ID q = 25 mA) ^out
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OCR Scan
DV2820 SD1902 FERROXCUBE VK200 motorola zener vk200 VK200-19 VK-200-19 MRF166 MRF136 BLF244 ST1001

20c15

Abstract: SYM20C15 transistor Q1 (DN25D depletion mode MOSFET), in association with the internal op amp and voltage reference on , external pass transistor (Q2) is added to reduce the power loading on the depletion mode MOSFET Q1 , output and loop return. The MOSFET supplies the quiescent current for the AD421. The BOOST pin on the , -19 J1-20 28F0195-100 R14 732k J1-21 J1-22 J1-23 J1-25 C19 220pF C15 6.2nF R13
Analog Devices
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20c15 Hart Modem HART BELL 202 hart protocol hart depletion mode mosfet Symbios Semiconductors E3297 J1-18 J1-19 AD589 J1-24

J133 mosfet transistor

Abstract: J104 MOSFET MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large­signal , 2 W PEP f MHz 925 960 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15.9 Transistor 3 ZOL* 23.1 ­ j6
Motorola
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J133 mosfet transistor J104 MOSFET mosfet j133 J122 transistor transistor z5 9601 mosfet

mosfet j122

Abstract: j122 mosfet International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique , die. Modified MOSFET symbol showing the internal device inductances. Lg internal Source Inductance , ) IRFJ120 IRFJ121 - - 8.0 A Modified MOSFET symbol T-39â'"11 showing the intégrât reveise P-N junction , RFJ12 0,121. :J122, 25 50 125
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OCR Scan
IRFJ122 IRFJ123 transistor j122 J122 9401A 2s j122 IRF 543 MOSFET CI-040 G-515 T-39-11 G-518 RFJ120

J133 mosfet transistor

Abstract: transistor j239 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large­signal , .5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15
Motorola
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transistor j239 J239 mosfet transistor J143 MOSFET J133 transistor J133 MOSFET J239 TRANSISTOR
Abstract: MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor , should be observed. AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary , Sheet November 2003 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test , Inc. 3 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data , Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0 Agere Systems
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AGR09085EU AGR09085EF DS04-055RFPP DS04-028RFPP

mosfet j122

Abstract: AGR09085EF AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1 , MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating , -895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E R3 VGG R4 C25 , . AGR09085E Test Circuit AGR 09085 E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Typical , Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0.82 1.69 + j1.14 GATE (2) ZS
TriQuint Semiconductor
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J118 MOSFET JESD22-C101A RM73B2B120J IS-95

J118 MOSFET

Abstract: j122 mosfet , Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage , MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet January 2003 Electrical , E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R1 C17 C18 C19 C20 C21 C22 , MOSFET Preliminary Data Sheet January 2003 Typical Performance Characteristics 0.12 07 0 , Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­
Agere Systems
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JESD22-A114 gl 3201 DS01-209RFPP

J127 mosfet

Abstract: MOSFET J132 Taiyo Yuden LMK432BJ226K C2 1 1µF ceramic capacitor U1 1 N- and P-channel MOSFET (SO , Coiltronics UP4-R47 (0.47µH) or Panasonic ETQP1F0R7H (0.7µH) N1, N2 2 N-channel MOSFET (D2PAK , ­21 J1­22 4.5V TO 5.5V REF 16 17 5 6 7 10 2 8 20 D4 D3 D2 D1
Maxim Integrated Products
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IRF7105 J127 mosfet MOSFET J132 mosfet J137 J132 MOSFET PC MOTHERBOARD FDB7030L 512 j122 MAX1638VRM MAX1638 MAX1638VRMEVKIT C4532X5RA226M

transistor A113

Abstract: a113 transistor Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. Rev. 5, 1/2005 MRF9002R2 1000 MHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for , = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3
Freescale Semiconductor
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transistor A113 a113 transistor transistor marking z11 c series transistor equivalent table marking j9

AGR09085E

Abstract: AGR09085EF MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally , , N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet May 2004 Electrical Characteristics , Sheet May 2004 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit , Agere Systems Inc. 3 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET , ) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0.82 1.69 + j1.14 GATE (2) ZS
Agere Systems
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ne 22 mosfet DS04-199RFPP DS04-152RFPP

J132 MOSFET

Abstract: J127 mosfet power inductor Coiltronics UP4-R47 (0.47µH) or Panasonic ETQP1F0R7H (0.7µH) N-channel MOSFET (D2PAK , Taiyo Yuden LMK432BJ226K 1µF ceramic capacitor N- and P-channel MOSFET (SO-8) International Rectifier , C3 220µF 10V VIN VIN VIN VIN VIN J1­1 J1­2 J1­3 J1­21 J1­22 9 20 VDD DH R2 0.009 8 LG LX DL
Maxim Integrated Products
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J137 MOSFET D4126 LG LX 10SA220M 4SP220M 595D106X0010A 595D475X0016A2T C3216X7R1C225M
Abstract: , N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal , AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet November 2003 , E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R4 C25 C24 R3 FB1 R2 C23 C12 C11 , ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0 , , N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet November 2003 8 0.2 0. 4 0.3 Agere Systems
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DS03-057RFPP

mosfet j122

Abstract: J118 MOSFET AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is , should be observed. AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Electrical , , 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R4 , -895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.11 0.12 0.38 , ) 895 (f3) ZS ZL (Complex Source Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22
PEAK Devices
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ALT500

z921

Abstract: , N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal , AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet September 2003 , E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E VGG R4 C25 C24 R3 FB1 R2 C23 C12 C11 , (Complex Source Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + , E-Mode, Lateral MOSFET Preliminary Data Sheet September 2003 8 0.2 0. 4 0.3 0.2
Agere Systems
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z921

AGR09085EF

Abstract: AGR09085E MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally , MOSFET Preliminary Data Sheet April 2004 Electrical Characteristics Recommended operating , , 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E R3 , Systems Inc. 3 AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary , Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0.82 1.69 + j1
Agere Systems
Original

EF125WT1

Abstract: AN-1850 EF125WT1 5 LME49830 AGND +12V160AJ11 J122.6V5V RM2 www.national.com , 1/(2CI1RI) (Hz) -3 dB2.9 Hz CI1RICI2CI36 BJTMOS MOSFET MOS MOS 3 LME49830
National Semiconductor
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AN-1850 LME49830TB ic 062c 2sk1058 2SJ162 062C AN1850 A200V LME498301 LME49830MOS 16VLME49830

J133 mosfet transistor

Abstract: transistor 955 MOTOROLA MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this , 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15.9 Transistor 3 ZOL* 23.1 ­ j6.5 22.8 ­ j8.4 22.6 ­ j9.3 Z
Motorola
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transistor 955 MOTOROLA
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