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j122 mosfet

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Abstract: AD421HART AD421 AD421 DAC NPN NPN Q1( MOSFET DN25D DN25D) AD421 AD421 AD421 AD421 5 V 3.3 V 3 V MOSFET Q1 LK1 LK2 LK3 (Q2) LOOP RTN 40 DAC AD421-20C15 AD421-20C15 80 k MOSFET AD421 AD421 AD421 AD421 Q2 BOOST BOOST COM U3 , 28F0195-100 28F0195-100 R14 732k J1-21 J1-21 J1-22 J1-23 J1-23 J1-25 J1-25 C15 6.2nF C21 1000pF C20 1000pF R13 825k ... Original
datasheet

3 pages,
239.94 Kb

AD421 J119 ad589 AN-534 74HC4050 J122 AD421-20C15 Symbios Logic 20c15 DN25D HART BELL 202 j122 mosfet J120 MOSFET SYM20C15 mosfet j122 28F0195-100 AN-534 abstract
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Abstract: Slide switch 2 Logic-level, P-channel, SO-8, single power MOSFET International Rectifier IRF7205 IRF7205 , MOSFET M1 1016 Clear Counters() MAX1660 MAX1660 Integration Time() Automatically Update Displays , Windows DOS1660 DOS1660.EXE _ U1(MAX1660 MAX1660) C6 C1R1 R3R6 MOSFET M1 M2D 1R 1 1 , Evaluates: MAX1660 MAX1660 J1­1 J1­22 J1­18 MAX1660 MAX1660 1. MAX1660 MAX1660 EV ... Original
datasheet

12 pages,
185.04 Kb

2N3904 512 j122 MAX1660EVKIT MAX1660EEE MAX1660 IRF7205 J120 MOSFET 19-1308 J115 mosfet NPN 2n3904 74HC14 so8 2n3904 j16 j122 mosfet 2N3904 j19 MAX1660 abstract
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Abstract: AGR09085E AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E AGR09085E is , should be observed. AGR09085E AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Electrical , , 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E AGR09085E VGG R4 , MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.11 0.12 0.38 , j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ j0.82 1.69 + j1.14 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT ... Original
datasheet

9 pages,
326.27 Kb

AGR09085E AGR09085EU AGR09085EF AGR09085E abstract
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Abstract: AGR09085E AGR09085E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. , E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless , , N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E AGR09085E R3 VGG R4 C25 C24 , AGR09085E AGR09085E Test Circuit AGR 09085 E 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Typical , Impedance) 0.35 � j0.73 1.66 + j1.22 0.35 � j0.77 1.67 + j1.18 0.33 � j0.82 1.69 + j1.14 GATE (2) ZS ... Original
datasheet

8 pages,
303.44 Kb

RM73B2B120J JESD22-C101A AGR09085EU AGR09085EF AGR09085E j122 mosfet mosfet j122 AGR09085E abstract
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Abstract: , Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E AGR09085E is a high-voltage , MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet January 2003 Electrical , E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09085E AGR09085E VGG R1 C17 C18 C19 C20 C21 C22 , MOSFET Preliminary Data Sheet January 2003 Typical Performance Characteristics 0.12 07 0. , Impedance) (Complex Optimum Load Impedance) 0.35 ­ j0.73 1.66 + j1.22 0.35 ­ j0.77 1.67 + j1.18 0.33 ­ ... Original
datasheet

8 pages,
275.42 Kb

JESD22-A114 J122 transistor gl 3201 AGR09085EU AGR09085EF AGR09085E AGR09085E abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed primarily fo r wideband large-signal output and driver from 3 0 -5 0 0 MHz. · · Low Crss - 4.5 pF @ V p s = 28 V MRF166C MRF166C - Typical Performance at 400 , MOSFET BROADBAND RF POWER FETs · · · · · MAXIMUM RATINGS Rating Drain-Gate Voltage Drain-Gate , Power 25 mA, ^in - - 3.99 - j12.2 14.15-j6.51 - - Ohms Ohms lD Q = ID q = 25 mA) ^out ... OCR Scan
datasheet

7 pages,
254.16 Kb

vk200 VK-200 DV2820 motorola zener FERROXCUBE VK200 datasheet abstract
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Abstract: International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique , that is closer to source and gate pins and center of die. Modified MOSFET symbol showing the internal , Continuous Source Current (Body Diode) IRFJ120 IRFJ120 IRFJ121 IRFJ121 - - 8.0 A Modified MOSFET symbol T-39-11 T-39-11 showing the , 0,121. :J122, 25 50 125 150 ... OCR Scan
datasheet

6 pages,
443.94 Kb

2s j122 T-39 9401A IRF 543 MOSFET IRFJ120 IRFJ121 IRFJ122 IRFJ123 J120 MOSFET J122 j122 transistor j122 mosfet transistor j122 mosfet j122 datasheet abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large­signal , j12.2 4.3 ­ j14.0 3.9 ­ j15.9 Transistor 3 ZOL* 23.1 ­ j6.5 22.8 ­ j8.4 22.6 ­ j9.3 Z in ZOL* 19.7 ­ ... Original
datasheet

7 pages,
137.08 Kb

j104 J239 9601 mosfet J143 MOSFET J239 TRANSISTOR J122 transistor J239 mosfet transistor J104 MOSFET mosfet j133 transistor j239 J133 mosfet transistor datasheet abstract
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Abstract: transistor Q1 (DN25D DN25D depletion mode MOSFET), in association with the internal op amp and voltage reference on , external pass transistor (Q2) is added to reduce the power loading on the depletion mode MOSFET Q1. , output and loop return. The MOSFET supplies the quiescent current for the AD421 AD421. The BOOST pin on the , J1-19 J1-19 J1-20 J1-20 28F0195-100 28F0195-100 R14 732k J1-21 J1-21 J1-22 J1-23 J1-23 J1-25 J1-25 C19 220pF C15 6.2nF R13 ... Original
datasheet

3 pages,
49.11 Kb

BC548 16MF CAPACITOR J119 transistor J122 transistor transistor j122 on TRANSISTOR BC548 pin diagram of transistor BC548 AD421-20C15 AD421 Symbios Semiconductors 28F0195-100 depletion mode mosfet 20c15 Hart Modem AN-534 AD421 AN-534 abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large­signal , 2 W PEP f MHz 925 960 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15.9 Transistor 3 ZOL* 23.1 ­ j6.5 ... Original
datasheet

7 pages,
236.2 Kb

J122 transistor 9601 mosfet mosfet j133 J133 mosfet transistor datasheet abstract
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