NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| J112 | Calogic | N-Channel JFET Switch |
1 pages, |
Original |  |
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| J112 | Fairchild Semiconductor | N-Channel Switch |
5 pages, |
Original | |
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| J112 | Fairchild Semiconductor | N-Channel Switch |
13 pages, |
Original | |
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| J112 | InterFET Corporation | N-Channel silicon junction field-effect transistor |
1 pages, |
Original | |
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| J112 | Intersil Corporation | Data Book 1981 |
1 pages, |
Scan | |
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| J112 | Intersil Corporation | Shortform Data Book 1983/4 |
1 pages, |
Scan | |
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| J112 | Intersil Corporation | N-channel JFET switch. |
1 pages, |
Scan | |
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| J112 | Lexor Electronic Laboratories | Delay Line TAPPED 20TAP 1IN 45NS ABS 900NS MAX |
2 pages, |
Original | |
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| J112 | Linear Integrated Systems | TRANS JFET N-CH 5MA 3TO-92 |
2 pages, |
Original | |
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| J112 | Micro Electronics | Semiconductor Device Data Book |
1 pages, |
Scan | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: - 763.535.2194 J112 Ordering Information 1. Series J112 1A S 12VDC 12VDC J112 J112K , J112 J112K Dimensions shown in mm. Dimensions are shown for reference purposes only. 4. Contact Voltage 5VDC 6VDC 9VDC 12VDC 12VDC 18VDC 18VDC 24VDC 24VDC Schematics & PC Layouts J112 1A J112K 1A , J112 RoHS Compliant 20.2 x 5.3 x 12.8 mm E197851 E197851 Features · · · · Low power consumption .12W Ultra light weight Narrow width for high density mounting UL/CUL certified Contact Data ... | Original |
2 pages, |
J112 equivalent transistor J112 J112 E197851 E197851 abstract |
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| Abstract: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS Irrl»! MICRO E Jlll, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and , (note l) IGSS -1 nA Vgs=-15V VDS=0 Drain Saturation Current Jlll J112 J113 IDSS * 20 5 2 mA mA mA , Gate-Source Pinchoff Voltage Jlll J112 J113 VP -3 -1 -0.5 -10 -5 -3 V v V ID=1HA IÛ=lnA ID=1|ÌA Vds=5V VDS=5V VDS=5V Drain-Source On Résistance J112 J113 rDS(on) 30 50 100 Q Q Q vgs=-iov vgs=-iov VGS=-10V VDS40 VDS40.1V ... | OCR Scan |
1 pages, |
J113 j112 ltd datasheet abstract |
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| Abstract: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS MICRO EL.ECTRDN Jill, J112, J113 are N-channel silicon junction field effect transistors designed for analog switching, choppers and , Current (note l) IGSS -1 nA Vgs=-15V VDS=0 Drain Saturation Current Jill J112 J 113 IDSS * 20 5 2 mA , ) nA Vds=5V VGS=10V Gate-Source Pinchoff Voltage Jill J112 J113 VP -3 -0.5 -10 -5 -3 v v V ID=1|iA I0=1hA ID=1|ÃŒA VDS=5V Vqs=5V VdS=5V Drain-Source On Resistance J112 J113 rDS(on) 30 50 100 Q Q Q ... | OCR Scan |
1 pages, |
J113 J112 J111 jill T0-92 T0-92 abstract |
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| Abstract: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS Irrl»! JI MICRO E Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers , Reverse Current (note l) IGSS -1 nA Vgs=-15V VDS=0 Drain Saturation Current Jill J112 J113 idss * 20 5 , nA VdS=5V vgs=10v Gate-Source Pinchoff Voltage Jill J112 J113 VP -3 -1 -0.5 -10 -5 -3 V v V id=1ha I0=lnA ID=1|ÌA Vds=5V Vds=5V VdS=5V Drain-Source On Resistance J112 J113 rDS(on) 30 50 100 q Q Q ... | OCR Scan |
1 pages, |
J113 j112 ltd J111 J112 datasheet abstract |
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| Abstract: J111 J112 J113 max. 40 40 40 V > 20 5 2 mA max. 400 400 400 mW > 3 1 0.5 V < 10 5 3 V < 30 50 , J112 J113 Dimensions in mm _! 0,40 mi n Note: Drain and source are interchangeable. PHILIPS February 1989 J111 J112 J113 RATINGS Limiting values in accordance with the Absolute Maximum System , 25 °C unless otherwise specified J111 J112 J113 Gate reverse current -VGS= 15V;VDS = 0 , specified Input capacitance y v J111 J112 J113 Vds = °; -vGS= 10 V; f = 1 MHz VDS = -VGs = 0;f= 1 MHz Cis ... | OCR Scan |
3 pages, |
Vgsoff -6V J113 J112 IEC134 J111 transistor J112 datasheet abstract |
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| Abstract: J113-12 J111/W J111/W J111/D J111/D J112 J112/W J112/D J113 J113/W J113/W J113/D J113/D ELECTRICAL CHARACTERISTICS TEST CONDITIONS: 25° C unless otherwise noted I J111 I J112 J113 I 1 PARAMETERS MIN TYP 1 1 11 : h »'i J 1 , 7 7 7 I Switching Time Test Conditions! 11 I tr Rise Time 6 6 6 J111 J112 J113 12 C ... | OCR Scan |
1 pages, |
J112 J113 csg 2001 jfet j112 j111 datasheet abstract |
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| Abstract: 711002b QGbV^VS 7ci3 «PHIN J V J111 J112 J113 N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS , J111 J112 J113 max. 40 40 40 V min. 20 5 2 mA max. 400 400 400 mW min. 3 1 0.5 V max. 10 5 3 V max. 30 , max is uncontrolled -io, 49 max July 1993 621 J111 J112 J113 TllOäEb OObVTTb bST IPHIN A RATINGS , J111 J112 J113 Gate reverse current -VGS= 15 V; VDS = 0 -'gss max. 1 1 1 nA Drain cut-off , J111 -Vqs off = 7 V; RL = 1550S2 1550S2 for J112 -vGSoff= 5 V; R= 3150 Ì2 for J113 Rise time Turn-on time Fall ... | OCR Scan |
3 pages, |
datasheet abstract |
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| Abstract: 711002b 0Clb7cl75 7^3 IPHIN J V J111 J112 J113 N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS , cut-off voltage VDS = 5V;ID= 1 mA Drain-source on-state resistance VDS = 0.1 V;VGS = 0 J111 J112 J113 , Material Copyrighted By Its Respective Manufacturer J111 J112 J113 TllOäEb ODbVTTb bST IPHIN , J111 J112 I J113 Gate reverse current -VGS= 15 V; VDS = 0 -'gss max. 1 1 1 nA Drain cut-off , VDD = 10 V; VGS = 0 to VGSoff -VGSoff = 12 V; RL = 750 f2 for J111 -VGSoff= 7 V; Rl = 1550 fl for J112 ... | OCR Scan |
3 pages, |
transistor J112 J113 J111 J112 datasheet abstract |
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| Abstract: â- 1^53=131 DÃœ240Gb TTT «APX N AUER PHILIPS/DISCRETE b7E T> J111 J112 J113 N-CHANNEL SILICON , 0 Jill J112 J113 ±VDS max. 40 40 40 V 'dss min. 20 5 2 mA ptot max. 400 400 400 mW ~VGS off , free air Rth j-a = 250 K/W STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified J111 J112 , on-state resistance VDS = 0.1 V;VGS = 0 rDS on max. 30 50 100 n J111 J112 J113 622 July 1993 , 0ff = 12 V; RL= 750 fi for J111 -vGSoff= 7 V; R|_ = 1550 f2 for J112 -VGSoff= 5 V; R l = 3150 i2 for ... | OCR Scan |
3 pages, |
J113 J112 J111 datasheet abstract |
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| Abstract: Databook.fxp 1/13/99 2:09 PM Page B-51 B-51 01/99 J111, J112, J113 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current , Electrical Characteristics Min J112 Max  35 Min J113 Max Gate Source Breakdown , Dimensions in Inches (mm) J112 SMPJ111 SMPJ111, SMPJ112 SMPJ112, SMPJ113 SMPJ113 Pin Configuration 1 Drain, 2 Source, 3 ... | Original |
1 pages, |
SMPJ111 J112 J113 SMPJ113 SMPJ112 NJ132 transistor j113 transistor J112 J111 transistor J111 J113 equivalent datasheet abstract |
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| Abstract: J-101 J-101 18.5 16 39.5 J-102 J-102 J-103 J-103 J-104 J-104 J-105 J-105 9 J-106 J-106 J-107 J-107 2.5 J-108 J-108 J-109 J-109 + J-110 J-110 J-111 J-111 J-112 ... | Original |
12 pages, |
J-103 J106 J103 J102 j112 J107 J-101 J-102 J-101 abstract |
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| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect , Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 , Drain-source voltage J112 J113 ±VDS max. 40 40 40 IDSS min. 20 5 2 mA , N-channel silicon field-effect transistors J111; J112; J113 RATINGS Limiting values in accordance , CHARACTERISTICS Tj = 25 °C unless otherwise specified J111 J112 J113 Gate reverse current -VGS = 15 V ... | Original |
6 pages, |
J112 equivalent J-112 Field-Effect Transistors "Field-Effect Transistors" J113 J111 J112 J113 equivalent datasheet abstract |
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| * Discrete Switch N-Channel Electrical Model * * Product: J112 / J111 / J113 * Package: SOT-23 *- .MODEL J112 NJF + VTO=-1.6800 N=1 BETA=5.002E-003 002E-003 002E-003 002E-003 + BETATCE=-0.46 RD=0.334 RS=0.334 + LAMBDA=0.00398 IS=181.30E-15 30E-15 30E-15 30E-15 ISR=1.7470E-12 7470E-12 7470E-12 7470E-12 + ALPHA=2.5430E-6 5430E-6 5430E-6 5430E-6 VK=152.20 CGD=6.9920E-12 9920E-12 9920E-12 9920E-12 + CGS=13.267E-12 267E-12 267E-12 267E-12 M=0.49314 PB=1 www.datasheetarchive.com/files/fairchild/simulation-models/j112.lib |
Fairchild | 22/10/2012 | 0.74 Kb | LIB | j112.lib |
| *PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J112.PRM Date: Oct 1992 * .MODEL J112 NJF + VTO = -2.3303E 3303E 3303E 3303E+000 + BETA = 5.97264E-003 97264E-003 97264E-003 97264E-003 + LAMBDA = 2.31986E-002 31986E-002 31986E-002 31986E-002 + RD = 2.29075E 29075E 29075E 29075E+000 + RS = 2.29075E 29075E 29075E 29075E+000 + IS = 8.87988E-016 87988E-016 87988E-016 87988E-016 + CGS = 1.05000E-011 05000E-011 05000E-011 05000E-011 + CGD = 1.20000E-011 20000E-011 20000E-011 20000E-011 + PB = 6.09944E-001 09944E-001 09944E-001 09944E-001 + FC = 5.00000E-001 00000E-001 00000E-001 00000E-001 *Parameter with default value: FC www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/philips/philips_spice/j112.lib |
Spice Models | 29/07/2012 | 0.48 Kb | LIB | j112.lib |
| *PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J112.PRM Date: Oct 1992 * .MODEL J112 NJF + VTO = -2.3303E 3303E 3303E 3303E+000 + BETA = 5.97264E-003 97264E-003 97264E-003 97264E-003 + LAMBDA = 2.31986E-002 31986E-002 31986E-002 31986E-002 + RD = 2.29075E 29075E 29075E 29075E+000 + RS = 2.29075E 29075E 29075E 29075E+000 + IS = 8.87988E-016 87988E-016 87988E-016 87988E-016 + CGS = 1.05000E-011 05000E-011 05000E-011 05000E-011 + CGD = 1.20000E-011 20000E-011 20000E-011 20000E-011 + PB = 6.09944E-001 09944E-001 09944E-001 09944E-001 + FC = 5.00000E-001 00000E-001 00000E-001 00000E-001 *Parameter with default value: FC www.datasheetarchive.com/files/spicemodels/misc/models/philips_fet/j112.prm |
Spice Models | 13/08/2003 | 0.48 Kb | PRM | j112.prm |
| *PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J112.PRM Date: Oct 1992 * .MODEL J112 NJF + VTO = -2.3303E 3303E 3303E 3303E+000 + BETA = 5.97264E-003 97264E-003 97264E-003 97264E-003 + LAMBDA = 2.31986E-002 31986E-002 31986E-002 31986E-002 + RD = 2.29075E 29075E 29075E 29075E+000 + RS = 2.29075E 29075E 29075E 29075E+000 + IS = 8.87988E-016 87988E-016 87988E-016 87988E-016 + CGS = 1.05000E-011 05000E-011 05000E-011 05000E-011 + CGD = 1.20000E-011 20000E-011 20000E-011 20000E-011 + PB = 6.09944E-001 09944E-001 09944E-001 09944E-001 + FC = 5.00000E-001 00000E-001 00000E-001 00000E-001 *Parameter with default value: FC www.datasheetarchive.com/files/spicemodels/misc/models/j112.prm |
Spice Models | 01/09/2003 | 0.48 Kb | PRM | j112.prm |
| *PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J112.PRM Date: Oct 1992 * .MODEL J112 NJF + VTO = -2.3303E 3303E 3303E 3303E+000 + BETA = 5.97264E-003 97264E-003 97264E-003 97264E-003 + LAMBDA = 2.31986E-002 31986E-002 31986E-002 31986E-002 + RD = 2.29075E 29075E 29075E 29075E+000 + RS = 2.29075E 29075E 29075E 29075E+000 + IS = 8.87988E-016 87988E-016 87988E-016 87988E-016 + CGS = 1.05000E-011 05000E-011 05000E-011 05000E-011 + CGD = 1.20000E-011 20000E-011 20000E-011 20000E-011 + PB = 6.09944E-001 09944E-001 09944E-001 09944E-001 + FC = 5.00000E-001 00000E-001 00000E-001 00000E-001 *Parameter with default value: FC www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (J112.PRM) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| J111_112_113_CNV_2 Product information page J111; J112; J 20 20 50 SOT54 (SPT, E-1) 30 35 typ. 13 3 to 10 3 40 J112 N J111; J112; J113 N-channel silicon field-effect transistors 01-jul-93 Product J112 J112 AMO 9340 052 70126 Standard Marking * Ammopack, Radial SOT54 RFS Support Spice model of J111 Spice model of J112 Spice model of J113 Power semiconductor products 2001 www.datasheetarchive.com/files/philips/pip/j111_112_113_cnv_2.html |
Philips | 23/04/2003 | 4.78 Kb | HTML | j111_112_113_cnv_2.html |
| J111; J112; J113; N-channel silicon field-effect transistors (V) J111 typ. 3 20 20 50 30 35 typ. 13 3 to 10 10 40 J112 typ. 3 5 5 Datsheet status Page count File size J111; J112; J113 N-channel silicon field content J112 J112 AMO 9340 052 70126 N.a. Standard Marking Ammopack Spice model of J111 Spice model of J112 Spice model of J113 WWW View the PIP online www.datasheetarchive.com/files/philips/pip/j111_112_113_cnv_2-v2.html |
Philips | 06/06/2005 | 5.21 Kb | HTML | j111_112_113_cnv_2-v2.html |
| Chemical content for J112 Chemical content for J112 Typenumber Philips package type Philips package type description Moisture Sensitivity Level Total product weight J112 SOT54 SPT; E-1 NA 250 mg Subpart Material group Substances CAS number Mass(mg) Mass(%) Active device Other Si 00.50 00.20 Leadframe Other Cu www.datasheetarchive.com/files/philips/chemical_content/j112.html |
Philips | 01/06/2005 | 5.46 Kb | HTML | j112.html |
| J111; J112; J113 N-channel silicon field-effect transistors to 10 20 30 20 J112 40 5 40 typ. 3 50 typ. 13 1 to * Ammopack, Radial SOT54 RFS J112 J112 AMO 9340 052 70126 Standard Spice model of J112 Spice model of J113 J111; J112; J113 N-channel silicon field-effect transistors 01-Jul-93 Product www.datasheetarchive.com/files/philips/pip/j111_112_113_cnv_2-v1.html |
Philips | 14/02/2002 | 11.67 Kb | HTML | j111_112_113_cnv_2-v1.html |
| Models • J111 • J112 • J113 . J112 *PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J112.PRM Date: Oct 1992 * .MODEL J112 NJF J112 Model parameters for J112 Oct 1992 Version: 1.0 1) VTO = -2 www.datasheetarchive.com/files/philips/models/j111_112_113_cnv_2-v1.html |
Philips | 31/12/2001 | 15.36 Kb | HTML | j111_112_113_cnv_2-v1.html |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| J112-18 | Vishay Siliconix | N-Channel JFET | |
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| J11-240-18 | N/A | dc-to-dc-Charge Pump Voltage Converter - Vin Range 9.0-36V DC/DC Converter | |
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| J11-240-48 | N/A | dc-to-dc-Charge Pump Voltage Converter - Vin Range 20-72V DC/DC Converter | |
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| J112A | N/A | N-Channel JFET | |
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| J112AMO | Philips Semiconductors / NXP Semiconductors | N-Channel JFET | |
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| J112AR | Allegro MicroSystems, Inc. | N-Channel JFET | |
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| J112R | Allegro MicroSystems, Inc. | N-Channel JFET | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| 2N5457 | 2N5457 Buy | J112 Buy | Allegro Microsystems Inc | Close | Junction FET (JFET) | N-Channel General Purpose Amplifier |
| NTE Electronics Part | Industry Part |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| J112 Buy | J112/D11Z Buy | Fairchild Semiconductor | Direct |
| J112 Buy | J113 Buy | Various | Close |
| J112 Buy | MMBFJ112 Buy | Fairchild Semiconductor | Direct |
| J112 Buy | PN4391 Buy | Various | Close |
| J112 Buy | PN4392 Buy | Various | Close |
| J112RLRAG Buy | 2N4858 Buy | Motorola | Close |
| J112RLRAG Buy | J113 Buy | Fairchild Semiconductor | Close |
| Part | Similar Part | Notes |
| J112 Buy | 2N6898 Buy | |
| J112 Buy | 2SJ131 Buy | |
| J112 Buy | 2SJ200-Y Buy | |
| J112 Buy | BSJ112 Buy | |
| J112 Buy | E112 Buy | |
| J112 Buy | IRF9142 Buy | |
| J112 Buy | J112-18 Buy | |
| J112 Buy | J112A-18 Buy | |
| J112-18 Buy | E112 Buy | |
| J112-18 Buy | J112 Buy |