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3305-25MMX100M 3M Interconnect 3305 25MMX100M PL 40 EXP visit Digikey
330518 TE's AMP 6.64mm2, COPPER ALLOY, TIN FINISH, RING TERMINAL visit Digikey
33-0508-31 Aries Electronics Inc IC Socket, SIP33, 33 Contact(s), 2.54mm Term Pitch , Wire Wrap, ROHS COMPLIANT visit Digikey
330-5291-055 ITT Interconnect Solutions Wire Terminal visit Digikey
33-0518-11 Aries Electronics Inc IC Socket, SIP33, 33 Contact(s), 2.54mm Term Pitch , Solder, ROHS COMPLIANT visit Digikey
33-0508-30 Aries Electronics Inc IC Socket, SIP33, 33 Contact(s), 2.54mm Term Pitch , Wire Wrap, ROHS COMPLIANT visit Digikey

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j 3305

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: .2 RT W ) * C T (¡if) ID 3.6 R T (K l) J 3-305 APPLICATIONS DATA (cont.) Error Amp Output , . BLOCK DIAGRAM 5.1V R e fe re n c e R e g u la to r { t j VREF u .v . Lockout VC rii a out , -16, SOIC-16 (TOP VIEW) J or N Package, DW Package PLCC-20, LCC-20 (TOP VIEW) Q, L Packages PACKAGE PIN , ; and 0°C to +70°C for the UC3846/7; Vin=15V, RT=10k, Ct=4.7nF, T a = T j .) UC1846AIC1847 UC2M6/UC2847 , Fall Time Start-Up Threshold Threshold Hysteresis Total Standby Current 17 17 21 mA 21 Supply Current j -
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UC3846A 1b46 UC1846AJ UC1846/7 UC2846/7 145CT UC1846
Abstract: . Temperature MIC2177-3.3 j V j 3.305 3 j * 3.300 : 3.295 I 3.290 } 3.285 / 3.280 , - 0.01[jF J OUTPUT CURRENT , ) .4.5V to 16.5V Junction Tem perature Range ( T j ) -4 0 °C to +125°C Electrical Characteristics V IN -
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ic lm 2177 MIC2177 IC2177 TPSE226M035R0300 TPSD107M010R0100 MBRS130LT3 CTX50-4P
Abstract: 711005b ODETTO 4 HPHIN T-33-05 RATINGS Limiting values in accordance with the Absolute MaximumSystem(IEC , T-33-05 Tj = 25 °C unless otherwise specified v(BR)CBO > V(BR)CES > v(BR)CEO > v(BR)EBO > 1FE , PHILIPS INTERNATIONAL BLX67 HIE D 7110fi2b 00277^4 ö SPHIN T-33-05 10 Ptot (W) 75 25 , '" short time operation v; j.YV K >J s , PHILIPS INTERNATIONAL BLX67 41E D m 7110fl2L> 00277=^ 1 ÃPHIN T-33-05 APPLICATION INFORMATION Tj = 25 -
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transistor J 3305 transistor 3305 transistor TE 901 th258 R5305 transistor c 1974 T-33-05 175MH 7Z65143 7Z68919 7Z6992
Abstract: Respective Manufacturer BD839 BD841 BD843 J V PHILIPS INTERNATIONAL 5bE D T-33-05 711DflSb Q043D31 , BD839 BD841 BD843 PHILIPS INTERNATIONAL SbE J> â  7110fl2b 0043025 273 «PHIN T , accordance with the Absolute Maximum System (IEC134) 711005b OOMBGS'i IDT â PHIN = T-33-05 Collector-base ,   7110fl2b 00M3030 ^21 HPHIN T-33-05 'CBO 'CBO < < 100 10 nA /iA 'ebo < 10 /xA Vbe < 1,3 V vCEsat < 0,8 , epitaxial power transistors J BD839 BD841 BD843 PHILIPS INTERNATIONAL zth j-mb (K/W) 5 bE ]> â -
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BD840 BD842 BD844 T-3Z-05- T0-202 DD43033
Abstract: PHILIPS INTERNATIONAL MAINTENANCE TYPE MIE J> m 7110â2b 0027023 â¡ El PHIN BLX91A. T , 11 PHILIPS INTERNATIONAL BLX91A A MIE D ES 7110ÛSb 0027Ã"24 5 Å'PHIN T-33-05 RATINGS Limiting , Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor 41E D m 7110flSb D057Ã2S 4 ÃPHIN BLX91A T-33-05 , C-) L j S \ \y , 005702(3 b B PHIN T-33-05 CHARACTERISTICS Tj = 25 °C unless otherwise specified Breakdown voltages -
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BLX91 transistor 936 transistor 931 D057 G027 T-33-OS 8-32UNC
Abstract:   7110flEb â¡D4317à 7ÃT â  PHIN PACKAGE OUTLINE _ _ T-33-05 Dimensions in mm J 0.32 , (IEC 134) T-33-05 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcBO collector-base voltage BDS943 , transistors BDS943/945/947_ -PHYUIPSINTE^ATY^I CHARACTERISTICS T-33-05 Tj = 25 °C unless otherwise , transistors BDS943/945/947 â  711005b DDM317S T70 «PHIN PHILIPS INTERNATIONAL 5bE D T-33-05 Ic (A) 10 0.01 L -1â'" + I T- 1 I ! j -
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BDS945 BDS947 m lc 945 T-33-0 BDS944/946/948 MSBO02 7UQ65
Abstract:   7110AEb 00431^0 2fl7 «PHIN CHARACTERISTICS -~ T-33-05 Tj = 25 °C unless otherwise specified. SYMBOL , MPHIN T-33-05 UCHU â i- - 4+ I- Ì t f , ax f v N s \ ) \ \ s \ i j . > > j i A n , i _L j 9DS95! i i 1 i _L i VCE M I. Region of permissible DC , Copyrighted By Its Respective Manufacturer Philips Components Produci^B_ecjficatjqrL - T-33-05 NPN silicon -
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PINNING-SOT223 BDS949 BDS951 BDS953 BDS955 SMD ic 431c 431c BDS949/951/953/955 BDS950/952/954/956
Abstract: MOS LSI TMS 3304 LR-TRIPLE 66-BIT DYNAMIC SHIFT REGISTER TMS 3305 LR-TRIPLE 64-BIT DYNAMIC , Low power dissipation description The TMS 3304 LR (TMS 3305 LR) consists of three separate 66(64 , shifting occurs when the 02 clock is momentarily pulsed to a logic 1, and the -\ clock to a logic 0 , -BIT DYNAMIC SHIFT REGISTER VfMS 3305 LR-TRIPLE 64-BIT DYNAMIC SHIFT REGISTER mechanical data and pin configuration The TMS 3304 LR arid TMS 3305 LR are mounted in TO-IOO packages. (See MOS/LSt packaging section -
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SN7426 SN7400 diagram an 7522 PW01 dynamic shift register Scans-004368
Abstract: Power MOSFET Stage for Boost Converters VUM 33-05 VDSS ID25 RDS(on) Module for Power Factor Correction 5 1 3 2 7 8 4 6 Test Conditions VDSS VDGR VGS T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 10 k Continuous 500 500 ±20 V V V T S = 85°C T S = 25 , 0.5 600 33 V A T J = 45°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 300 320 A A T J , VRRM IFAV T S = 85°C, siniodial 180° 800 27 V A T J = 45°C, t = 10 ms (50 Hz) t = 8.3 IXYS
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mosfet J 3305 VUM 33-05
Abstract: ), ±5% (J), ±10% (K) -55°C to 225°C ±100ppm/°C as standard, other TCR on request 5 times rated power with , or NC normal cap) e.g.: UT100 M4 200R J 100PPM RC Glass coat Temperature (ºC) Dimensions (mm , B 15±1 33±0.5 33±0.5 33±0.5 33±0.5 45±1 D 10±1.5 18±0.5 18±0.5 18±0.5 18±0.5 21±0.5 G M4 M6 M6 M6 M6 ARCOL
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UT20 ut50 UT70 UT150
Abstract: MOS LSI T M S 3304 L R - T R I P L E 66-BIT D Y N A M I C S H I F T R E G I S T E R T M S 3305 L , The TMS 3304 LR (TMS 3305 LR) consists o f three separate 66(64) b it dynamic shift registers w ith , T M S 3304 L R - T R I P L E 66-BIT D Y N A M I C S H I F T R E G I S T E R V f M S 3305 L R - T R I , 3304 LR and TMS 3305 LR are mounted in TO-IOO packages. (See MOS/LSt packaging section.) ,D NO. 1 2 3 4 , voltage V jn |Q) Data logic 1 voltage V j n| ) Clock Overlap voltage (See Figure) Clock pulse w idth, tp -
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tms 3305
Abstract: Manufacturer Philips Semiconductors T-33-05 Product specification NPN silicon planar epitaxial microwave , 1992 56 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors T-33-05 , June 1992 57 This Material Copyrighted By Its Respective Manufacturer T-33-05 Philips Semiconductors , means of hollow rivets. June 1992 58 This Material Copyrighted By Its Respective Manufacturer T-33-05 , T-33-05 Product specification NPN silicon planar epitaxial microwave power transistor LEE1015TA -
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4046 application note philips transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 transistor marking code 1325 MBB01S 1015T
Abstract: 161 LWE2025R T-33-05 philips international MECHANICAL DATA Fig. 1 FO-93. 0.1 Li SbE D â  â™¦I , . 235 OC 162 June 1992 Y Microwave linear power transistor PHILIPS INTERNATIONAL SbE D 7Z94085 T-33-05 , typ. 83 pF June 1992 163 LWE2025R philips international 5bE D T-33-05 711PAEt> OOtlbS^ Db , ; class-A 2.3 16 400 > 2 typ. 2.8 > 7 typ. 7.8 2 + j8 5.5 -j 1.8 - 30 mm - input V-'ia â  . t, . 14 Sii - « "-"'fcia -«.-S» V * -11 â  j - 30 mm - 0.5 3 -11.5- J 'v . 3.5 ^ 3.5+3.5 10 ' - -
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MCD656 711PAE
Abstract: PHILIPS INTERNATIONAL BLX92A MIE D n 711Qfl2b D027Ã"3Û S El PHIN T-33-05 RATINGS Limiting values in , m 711002b 0QE7ä3cJ 4 HPHIN BLX92A T-33-05 CHARACTERISTICS Tj = 25 °C unless otherwise specified , INTERNATIONAL U.H.F. power transistor MIE D 711002b 0G27Ã"41 S ^IPHIN BLX92A T-33-05 15 Ne| (dB) 10 , Manufacturer PHILIPS INTERNATIONAL BLX92A 41E » B 711002b DGEVÃMS M aPHIN T-33-05 -4 M (dB) -2 I I I ,  1 -30 M (dB) -20 -10 1 1 1 1 J- b ^re -
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BLX92 em 179 sfe 5,5 ma transistor IR 944
Abstract: . It must never be thrown out with the general or domestic waste._ June 1992 55 T-33-05 Philips , R8E = , 57 Philips Semiconductors T-33-05 Product specification NPN silicon planar epitaxial q , connections are made by means of hollow rivets. June 1992 58 Philips Semiconductors T-33-05 Product specification NPN silicon planar epitaxial q1 ^j^ microwave power transistor PHILIPS INTERNATIONAL SbE D â -
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MSB052 6822 npn D 1398 Transistor d 1556 transistor 22716 transistor ROE ELECTROLYTIC CAPACITOR 711G82 MCD659
Abstract: Zl n CW; class-A 2.3 16 400 >2 > 7 2 + j8 5.5 -j 1.8 MECHANICAL DATA Dimensions in mm FO-93 (see , 1992 161 This Material Copyrighted By Its Respective Manufacturer LWE2025R T-33-05 philips , Copyrighted By Its Respective Manufacturer Microwave linear power transistor philips international T-33-05 , international APPLICATION INFORMATION SbE D T-33-05 7110A2L> GOMbS^ Db7 HPHIN Microwave performance up to , -j1.8 - 30 mm - -11 â  ,1 input â'¢ I , -r^^ t t 2 i T 1.5 : : r 14 - 30 mm - -11.5- J -
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International Power Sources 33-OS
Abstract: MOS LSI TMS 3304 LR TRIPLE 66 BIT DYNAMIC SHIFT REGISTER TMS 3305 LR-TRIPLE 64-BIT DYNAMIC SHIFT , dissipation description The IMS 3304 LR (TMS 3305 LR) consists of three separate 66(64) bit dynamic shift , the 02 clock is momentarily pulsed to a logic 1, and the 0-j clock to a logic 0. Output data appears , SHIFT REGISTER TMS 3305 LR-TRIPLE 64-BIT DYNAMIC SHIFT REGISTER mechanical data and pin configuration The TMS 3304 LR and TMS 3305 LR are mounted in TQ-100 packages. (See MOS/LSI packaging section.) O -
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3305
Abstract: T-33-05 MECHANICAL DATA Fig. 1 SOT-48. Dimensions in mm When locking is required an adhesive , °^1-|sie|'SHl-,soeP) lC = 90 mA; VCE = 20 V; f = 500 MHz; Tamb = 25 C A T-33-05 lE = 0;VCB = 20V ICBO , Manufacturer T-33-05 CHARACTERISTICS (continued) Output voltage at d;m = -60 dB (see Fig. 2) (DIN 45004B ,   N-P-N h.f. wideband transistor | BFR94 T-33-05 naJI ui Jl Fig. 3 VCE = 20 V; f = 500 MHz; Tj = 25 , AMER PHILIPS/DISCRETE ESE D BFR94 ^53131 doiaioo y m T-33-05 Fig. 4 Vqe = 20 V; lc = 90 mA; Tamb = -
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BFQ34 Ferroxcube cross reference BFR94A f2nd Ferroxcube core S3T31 T-33- VCE-20V
Abstract: S G S-^THOMSON 5TC D | 7SETEB7 0005421, 7 O THOMSON-CSF DIVISION SEMICONDUCTEURS J^ / h ( ? 59C 02426 D tN 3305 B â'" 1N3350B ZENER DIODES DIODES ZEN ER 50 W silicon Zener diodes : â , 6.8 V , jonction-boîtier ma* Rth(j-c) 2 \ °c/w J 50, rue Jean-Pierre Tlmbaud - B.P. 5 F - 92403 Couibevoie Cedex -
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1N336 1N3328 1N3340 1N3327 2901N 1N3315BR wzk marking 1N3326 1N330SB 1N332BB 1N3330 1N3334
Abstract: sie j> m aaastos oomflib bbfi «sieg SIEMENS siemens aktien6esellschaf NPN Silicon AF , . 534 5.91 SIE D â  6535b05 Domai? ST4 â SIEG SÏFNFNS AKTIENGESELLSCHAF BD825 . BD 829 T-33-05 ,   fl235bG5 GGMlfllfi UBO «SIEG SIEMENS AKTIEN6ESELLSCHAF BD825 . BD 829 T-33-05 Electrical , Permissible pulse load äuua =/(fP) Collector current le =/(Vbe) -j BD B25.829 10 ,-2 10~610" 0 0.2 , siemens aktiengesellschaf .BD829 Collector cutoff current lew =f(tt) vcb = 30 V T-33-05 DC current -
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Q62702-D1305 bd 825 10 SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 Q62702-D1135 Q62702-D149 Q62702-D1213 Q62702-D60 Q62702-D1306
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