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Part Manufacturer Description Datasheet BUY
DSEP30-12A IXYS Corporation Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247AD, PLASTIC PACKAGE-2 visit Digikey Buy
DSEP29-06A IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2 visit Digikey Buy
DSEP29-06AS IXYS Corporation Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-2 visit Digikey Buy
DSEP30-06BR IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, ISOPLUS247, 2 PIN visit Digikey Buy
DSEP2X31-12A IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 2 Element, 30A, 1200V V(RRM), Silicon, MINIBLOC-4 visit Digikey Buy
DSEP29-03A IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 300V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN visit Digikey Buy

ixys dsep

Catalog Datasheet MFG & Type PDF Document Tags

ixys dsep

Abstract: 2X61 Ei IXYS DSEP 2x 61-12A HiPerFREDâ"¢ Epitaxial Diode with soft recovery Preliminary Data = 2x 60 A RRM = 1200 V â FAV V t lrr = 40 ns RSM V RRM V Type 1200 1200 DSEP 2x 61-12A b , Dimensions see Outlines.pdf C\J oi © 1999 IXYS All rights reserved 1 -2 Ei IXYS DSEP 2x 61-12A Fig. 1 , specified IXYS reserves the right to change limits, test conditions and dimensions. Features â , 0.0391 NOTE: Fig. 2 to Fig. 6 shows typical values © 1999 IXYS All rights reserved 2-2
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OCR Scan

30u60

Abstract: ixys dsei 8-06 [ns] Qrr [nC] 100°C 100°C 330 120 - IXYS IXYS DSEI 6-06 DSEP 6-06 AS AS 600 600 TO 252 AA TO 252 AA 6,0 6,0 1,5 2,1 IXYS IXYS IXYS IXYS IXYS DSEI DSEI DSEP , 310 310 - 80 80 - IXYS IXYS IXYS IXYS DSEI DSEP DSEC DSEI 12-06 15-06 16-06 , 20,0 20,0 1,7 2,04 2,1 1,7 500 300 - 110 93 - IXYS IXYS IXYS DSEP 29-06 AS , ,6 1,6 2,5 250 73 IXYS IXYS IXYS IXYS IXYS DSEP DSEP DSEC DSEI DSEI 30-06
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Abstract: DSEP 29-06A DSEP 29-06AS DSEP 29-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V , Type C A TO-220 AC C A DSEP 29-06A DSEP 29-06AS DSEP 29-06B C (TAB) TO-263 C , Cycle < 2.0 % y Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Data according to IEC 60747 and per diode unless otherwise specified. 1-3 DSEP 29-06A DSEP 29-06AS 70 A 60 3000 IXYS
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30-06B

IXAN0060

Abstract: series connection of mosfet °C for IXYS HiPerFREDTM diodes. Now the diode with largest chip size (DSEP 30-06B) requires lowest , IXYS series diode DSEP 906CR. This is due to its very short second portion of recovery time tB, what , Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS , DIFFERENT APPROACHES FOR DIODE OPTIMIZATION In addition to the well-known IXYS FREDs (named DSEI. for , called HiPerFREDTM (respectively DSEP. and DSEC.). Blocking currents have been reduced at high
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IXAN0060 series connection of mosfet dt300 calculation of IGBT snubber ISOPLUS247

calculation of IGBT snubber

Abstract: ISOPLUS247 corresponds to the LightspeedTM IGBT series of IXYS, while "R" stands for the ISOPLUS247TM package. DSEP , value of 175°C for IXYS HiPerFREDTM diodes. Now the diode with largest chip size (DSEP 30-06B , requires less cooling effort than the IXYS series diode DSEP 906CR. This is due to its very short second , Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS , DIODE OPTIMIZATION In addition to the well-known IXYS FREDs (named DSEI. for single diodes and DSEK
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DSEP

ixys dsep

Abstract: P6QGUI to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080125 1-2 Advanced Technical Information DSEP 6-06BS 10 K/W 1 ZthJC 0.1 0.01 0.001 0.00001 DSEP 6-06AS DSEP 6-06BS 0.0001 0.001 0.01 , DSEP 6-06BS Advanced Technical Information HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = , 600 DSEP 6-06BS C A TO-252AA (DPAK) Cathode P6QGUI Cathode (Flange) Anode
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ixys dsep P6QGUI DSEP6-06AS
Abstract: DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V , 600 600 Type DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD ISOPLUS 247TM Version A , % IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All , DSEP 30-06A 70 A 60 50 3000 T = 100°C nC VVJ= 300V R 2500 IRM Qr IF 50 TVJ , t IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All IXYS
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Abstract: specified © 2000 IXYS All rights reserved DSEP 29-06A 70 A 60 3000 50 T = 100°C nC , DSEP 29-06A DSEP 29-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V = 30/35 ns , C C DSEP 29-06A DSEP 29-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode , commutating switch Dimensions see pages D4 - 85-86 IXYS reserves the right to change limits, test , 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06A 0.0001 0.001 0.01 s 0.1 1 t IXYS
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1200 va ups circuit diagram

Abstract: 30-06BR NOTE: Fig. 2 to Fig. 6 shows typical values © 1999 IXYS All rights reserved D2 - 21 DSEP , 300 10 15 30 30 60 30 30 30 30 30 DSEP 8-03A DSEP 15-03A DSEP 29-03A DSEP 30-03A DSEP 60-03A 4 5 6 7 8 400 30 30 DSEP 30-04A 9 1 1 1 2 / 2a 2/3 600 600 600 600 600 10 15 30 30 60 35 35 35/30 35/30 35 DSEP 8-06A DSEP 15-06A DSEP 29-06A/B DSEP 30-06A/B/BR DSEP 60-06A/AT 10 12 14 17 20 1200 1200 1200 1200 1200 10
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1200 va ups circuit diagram DSEC16-06A dse*60-06A dsep 2x91-03a dsep 12-12a y 803A 31-03A 61-03A 91-03A 31-04A

diode s-05-02

Abstract: 29-06B © 2000 IXYS All rights reserved 2-3 DSEP 29-06B 60 A 1000 50 IF TVJ= 100°C VR = , DSEP 29-06A DSEP 29-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30/35 , C C DSEP 29-06A DSEP 29-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode , Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 047 Data
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diode s-05-02 29-06A Diode 300V 15A

DSEP30-06A

Abstract: DSEC60-06A IXYS All rights reserved 417 Fig. 7 Transient thermal resistance junction to case 2-3 DSEP , DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V , 600 Type DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD ISOPLUS 247TM Version A , Cycle < 2.0 % Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Data according to IEC
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DSEP30-06A DSEC60-06A DSEC6006A IXYS DSEP30-06A 30-06a DSEP3006A

ixys dsep

Abstract: 29-06A IXYS All rights reserved 417 Fig. 7 Transient thermal resistance junction to case 2-3 DSEP , DSEP 29-06A DSEP 29-06AS DSEP 29-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V , Type C A TO-220 AC C A DSEP 29-06A DSEP 29-06AS DSEP 29-06B C (TAB) TO-263 C , , Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Data according to IEC 60747 and per diode unless otherwise
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Abstract: IEC 60747 and per diode unless otherwise specified © 1999 IXYS All rights reserved 1 DSEP , DSEP 60-06A DSEP 60-06AT HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 600 V trr = 35 ns with soft recovery Preliminary Data VRSM VRRM V V 600 600 Type A DSEP 60-06A C TO-247 AD (A-Type) TO-268 AA (AT-Type) DSEP 60-06AT C C A A C (TAB) C , dissipation within the diode - Turn-on loss in the commutating switch Dimensions see IXYS catalog D98004E IXYS
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Abstract: unless otherwise specified © 1999 IXYS All rights reserved 1 DSEP 2x31-06A Preliminary Data , thermal resistance junction to case © 1999 IXYS All rights reserved 2 DSEP 2x31-06B Preliminary , DSEP 2x31-06A DSEP 2x31-06B HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 600 V trr = , miniBLOC, SOT-227 B Symbol Type DSEP 2x31-06A DSEP 2x31-06B Test Conditions Maximum Ratings , Turn-on loss in the commutating switch Dimensions see IXYS catalog D98004E IXYS reserves the right IXYS
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31-06A 31-06B

DSEP 12A

Abstract: ixys dsep DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 , 1200 1200 Type A C DSEP 30-12A DSEP 30-12AR Version A Version AR C C A A , outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All , DSEP 30-12A DSEP 30-12AR 70 A 60 5 Qr IF 50 60 TVJ= 100°C VR = 600V mC TVJ , Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 2 DSEP
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DSEP 12A A605
Abstract: IXYS All rights reserved DSEP 30-12A DSEP 30-12AR 70 A 60 5 #1; Qr IF 50 60 TVJ , DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 , 1200 1200 Type A C DSEP 30-12A DSEP 30-12AR Version A Version AR C C A A , Dimensions see pages D4 - 85-86 IXYS reserves the right to change limits, test conditions and dimensions , versus -diF/dt 2 DSEP 30-12AR 1 DSEP 30-12A K/W 0 0.0 600 A/ s 1000 800 diF/dt IXYS
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29-06AS

Abstract: 29-06A DSEP 29-06A DSEP 29-06AS DSEP 29-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V , 600 600 Type A C C A DSEP 29-06A DSEP 29-06AS DSEP 29-06B C (TAB) TO-263 C , Dimensions see pages D4 - 85-86 IXYS reserves the right to change limits, test conditions and dimensions. 1-3 202 Data according to IEC 60747 and per diode unless otherwise specified © 2002 IXYS All rights reserved DSEP 29-06A DSEP 29-06AS 70 A 60 3000 50 T = 100°C nC VVJ = 300V R
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15-12CR

Abstract: unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080125a 1-3 DSEP 15-12CR E A Q S A2 U R T , dimensions. © 2008 IXYS All rights reserved 20080125a 2-3 DSEP 15-12CR 1.2 40 1.0 16 Irr , DSEP 15-12CR HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 35 ns with , A C C 1200 1200 DSEP 15-12CR A Isolated back surface A = Anode, C = Cathode
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E153432
Abstract: DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns , Type A C DSEP 30-12A DSEP 30-12AR Version A Version AR C C A A C (TAB , Cycle < 2.0% y Pulse Width = 300 µs, Duty Cycle < 2.0% IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0549 Data according to IEC 60747 and per diode unless otherwise specified. 1-2 DSEP 30-12A DSEP 30-12AR 70 A 60 5 IXYS
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DSEP 2X31-06b

Abstract: 00418 diode unless otherwise specified © 2000 IXYS All rights reserved DSEP 2x 31-06A 70 A 60 , DSEP 2x 31-06A DSEP 2x 31-06B HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 600 V = 30 , -227 B Symbol IFRMS IFAVM Type DSEP 2x 31-06A DSEP 2x 31-06B Conditions Maximum Ratings , Turn-on loss in the commutating switch Dimensions see pages D4 - 85-86 IXYS reserves the right to , 0.117 0.115 0.0055 0.0092 0.0007 0.0418 0.01 0.001 0.0001 DSEP 2x31-06A 0.001
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DSEP 2X31-06b 00418
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