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Part Manufacturer Description Datasheet BUY
IRFZ48L Vishay Siliconix MOSFET N-CH 60V 50A TO-262 visit Digikey Buy
IRFZ48VPBF Infineon Technologies AG Power Field-Effect Transistor, 72A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey Buy
IRFZ48NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRFZ48SPBF Vishay Siliconix Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRFZ48PBF Vishay Siliconix Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRFZ48NSPBF Infineon Technologies AG Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy

irfz48 n mosfet

Catalog Datasheet MFG & Type PDF Document Tags

IRFZ48

Abstract: irfz48 n mosfet Units °C/W - 0.50 - 62 1295 IRFZ48 V(BR)DSS 4BS5MS2 OOlSfllS 2T1 « I N R bSE 1 , International k? r Rectifier HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated , Paralleling Description 4ÔS54S2 Q D l S a m 3b5 IIN R PD-9.758 IRFZ48 INTERNATIONAL RECTIFIER , Input Capacitance O u tp u t C a pacitance AV(BR)DSS/ATj Breakdow n V oltage Tem p. C oefficient RDS(on) VGS(th) 0.060 - - 20 27 n V Reference to 25°C, Id= 1mA Vgs=10V, Id=43A @ V ds=Vgs
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OCR Scan
irfz48 n mosfet 5545B 4A5545E
Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , TO-220AB contribute to its wide acceptance throughout the industry. S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 Lead (Pb)-free SnPb , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48, SiHFZ48 , Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the Vishay Siliconix
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HFZ48 2002/95/EC IRFZ48P HFZ48-E3 2011/65/EU JS709A

IRFZ48

Abstract: SiHFZ48 IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · · , acceptance throughout the industry. S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C , : 91294 S09-0061-Rev. A, 02-Feb-09 www.vishay.com 1 IRFZ48, SiHFZ48 Vishay Siliconix THERMAL , Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET
Vishay Siliconix
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IRFZ48 MOSFETs
Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 , Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D , IRFZ48, SiHFZ48 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient , : 91294 S-Pending-Rev. A, 23-Jul-08 IRFZ48, SiHFZ48 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C Vishay Siliconix
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Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN , S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48, SiHFZ48 Vishay Siliconix
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IRFZ48

Abstract: SiHFZ48 IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · · , acceptance throughout the industry. S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C , : 91294 S-Pending-Rev. A, 23-Jul-08 www.vishay.com 1 IRFZ48, SiHFZ48 Vishay Siliconix THERMAL , Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET
Vishay Siliconix
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Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN , S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48, SiHFZ48 Vishay Siliconix
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Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , TO-220AB contribute to its wide acceptance throughout the industry. S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 Lead (Pb)-free SnPb , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48, SiHFZ48 , Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the Vishay Intertechnology
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Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , -220AB contribute to its wide acceptance throughout the industry. S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 Lead (Pb)-free SnPb ABSOLUTE , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48, SiHFZ48 Vishay Siliconix , Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the Vishay Siliconix
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Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , TO-220AB contribute to its wide acceptance throughout the industry. S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 Lead (Pb)-free SnPb , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48, SiHFZ48 , Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the Vishay Siliconix
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MRF 1516

Abstract: IRFZ48 International S Rectifier PD-9.758 IRFZ48 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating â , IRFZ48_ Electrical Characteristics @ Tj = 25 C (unless otherwise specified) I«R Parameter Min. Typ , RDS(on) Static Drain-to-Source On-Resistance â'" â'" 0.018 n Vas=10V, lD=43A © VGS(lh) Gate , is Continuous Source Current (Body Diode) - - 50* A MOSFET symbol showing the AIâ'" integral reverse , . Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Tc=25°C IRFZ48 Vqs. Drain-to-Source
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OCR Scan
MRF 1516

1RFZ48

Abstract: RFZ48 International Säg Rectifier PD-9.758 IRFZ48 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive , °C, Id= 1mA RDS(on) Static Drain-to-Source On-Resistance â'" â'" 0.018 n VGS=10V, ID=43A © VgS[bi , . Max. Units Test Conditions Is Continuous Source Current (Body Diode) â'" â'" 50* A MOSFET symbol , =25°C IRFZ48 VDs, Drain-to-Source Voltage (vofts) Fig 2. Typical Output Characteristics, Tc=175°C 8 S 10 Vqs , n o 2 co E PO e -â'" 'nJ O 1,5 1.0 0.5 0,0 I0 - 7 2A s
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OCR Scan
IRFZ48S 1RFZ48 RFZ48 RG-910 d72a AN-994
Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , TO-220AB contribute to its wide acceptance throughout the industry. S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 Lead (Pb)-free SnPb , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48, SiHFZ48 , Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the Vishay Intertechnology
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Abstract: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN , S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ48, SiHFZ48 Vishay Siliconix
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IRFZ48

Abstract: IRFZ48L IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY , °C Operating Temperature Fast Switching Lead (Pb)-free Available G D S S N-Channel MOSFET , IRFZ48, SiHFZ48 data and test conditions. f. Calculated continuous current based on maximum allowable , Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 72 A
Vishay Siliconix
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IRFZ48STRL SiHFZ48L-E3 SiHFZ48S-E3 SiHFZ48STL HFZ48S HFZ48L

IRFZ48L

Abstract: IRFZ48S MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 72 A , IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY , Operating Temperature Fast Switching Lead (Pb)-free Available G D S S N-Channel MOSFET ORDERING , IRFZ48/SiHFZ48 data and test conditions. f. Calculated continuous current based on maximum allowable , . 11). b. Pulse width 300 µs; duty cycle 2 %. c. Uses IRFZ48/SiHFZ48 data and test conditions. d
Vishay Siliconix
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IRFZ48L/S IRFZ48S/S

IEC 269-5

Abstract: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V , -263) G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free , . 1.6 mm from case. e. Uses IRFZ48, SiHFZ48 data and test conditions. f. Calculated continuous current , Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ
Vishay Siliconix
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IEC 269-5 HFZ48STL IRFZ48LP HFZ48L-E3
Abstract: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V , D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device , /µs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. Uses IRFZ48/SiHFZ48 data and test conditions. f , Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX Vishay Siliconix
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IRFZ48SP HFZ48S-E3
Abstract: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V , -262) D2PAK (TO-263) G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free , . ISD 72 A, dI/dt 200 A/s, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. Uses IRFZ48, SiHFZ48 data and , Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ Vishay Siliconix
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HFZ48S-GE3
Abstract: ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 , IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY , S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb , ï'£ 175 °C. d. 1.6 mm from case. e. Uses IRFZ48, SiHFZ48 data and test conditions. f. Calculated , . Uses IRFZ48/SiHFZ48 data and test conditions. d. Calculated continuous current based on maximum Vishay Siliconix
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