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IRF7457TRPBF Infineon Technologies AG 15A, 20V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8 visit Digikey
IRF7457PBF Infineon Technologies AG Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 visit Digikey

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irf7457 Datasheet

Part Manufacturer Description PDF Type
IRF7457 International Rectifier HEXFET Power MOSFET Original
IRF7457PBF International Rectifier Original
IRF7457TR International Rectifier 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Original
IRF7457TRPBF International Rectifier Original

irf7457

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PD- 93882D IRF7457 SMPS MOSFET HEXFET® Power MOSFET Applications l High Frequency , /01 IRF7457 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown , 100A/us TJ = 125°C, IF = 12A, VR=15V di/dt = 100A/us www.irf.com IRF7457 1000 1000 VGS , TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7457 , , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7457 16 RD VDS VGS International Rectifier
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IA-48
Abstract: PD- 93882D IRF7457 SMPS MOSFET HEXFET® Power MOSFET Applications l High Frequency , on page 8 www.irf.com 1 3/25/01 IRF7457 Static @ TJ = 25°C (unless otherwise specified , ƒ www.irf.com IRF7457 1000 #20; 1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V I D , , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7457 VGS = 0V , . Maximum Safe Operating Area www.irf.com IRF7457 16 RD VDS VGS I D , Drain Current (A International Rectifier
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Abstract: LDrv1 VOUT3 Q3 IRF7457 PGnd R7 442V U1 R2 1K R3 C8 2200pF 22K Fb3 Fb1 IRU3046 VREF Rt Sync Vp2 HDrv2 C17 2x 150uF Q4 L4 IRF7457 3.9uH Q5 IRF7457 Comp1 LDrv2 , C14 470pF V REF Sync R13 15K R16 Q2 IRF7457 LDrv1 VOUT3 L3 2.2uH R3 , IRF7457 R12 1K C23 1uF L4 3.3uH C26 470pF C19,C20,C21 3x 150uF R17 5mV R19 4.7 V International Rectifier
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4AC16 IRLR2703 IRF7460 IRF7313 BAT54S BAT54A AN-1046
Abstract: PD- 93882C IRF7457 SMPS MOSFET HEXFET® Power MOSFET Applications l High Frequency , /04/00 IRF7457 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , 100A/us TJ = 125°C, IF = 12A, VR=15V di/dt = 100A/us www.irf.com IRF7457 1000 1000 VGS , TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7457 , , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7457 16 RD VDS VGS International Rectifier
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Abstract: PD- 93882B IRF7457 SMPS MOSFET HEXFET® Power MOSFET Applications l High Frequency , /00 IRF7457 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown , 100A/us TJ = 125°C, IF = 12A, VR=15V di/dt = 100A/us www.irf.com IRF7457 1000 1000 , On-Resistance Vs. Temperature 3 IRF7457 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd , Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7457 16 RD VDS VGS I D International Rectifier
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Abstract: IRF7457 for synchronous MOSFET. These devices provide low onresistance in a compact SOIC 8-Pin package. The MOSFETs have the following data: IRF7460 IRF7457 VDSS = 20V VDSS = 20V ID = 10A @ 758C ID = , condition test. For more detail please refer to the IRF7460 and IRF7457 data sheets. By using equation (7 , IRLR2703 R1 Fb3 C7 47uF 1K Rt R2 1K Q3 IRF7457 C16 2x 150uF R7 442V C17 2x 150uF Vp2 HDrv2 Comp1 Q4 IRF7457 R8 1K L4 1N4148 22K 2.5V @ 8A 3.9uH Q5 Advanced Power Electronics
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APU3046 Type NS ceramic cap APU3046O Sanyo "date code" POSCAP Capacitor ic MARKING FZ DO5022HC dio sc bat54 400KH TSSOP-24 U3046O
Abstract: ratings or violate the overall thermal budget. Choose IRF7460 for control MOSFET and IRF7457 for , the following data: IRF7460 IRF7457 VDSS = 20V VDSS = 20V ID = 10A @ 758C ID = 12A @ 708C RDS , more detail please refer to the IRF7460 and IRF7457 data sheets. By using equation (7), we can , IRLR2703 R1 Fb3 C7 47uF 1K Rt R2 1K Q3 IRF7457 C16 2x 150uF R7 442V C17 2x 150uF Vp2 HDrv2 Comp1 Q4 IRF7457 R8 1K L4 1N4148 22K 2.5V @ 8A 3.9uH Q5 Advanced Power Electronics
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SR CAP 1mf ECS-T1AD476R
Abstract: ratings or violate the overall thermal budget. Choose IRF7460 for control MOSFET and IRF7457 for , the following data: IRF7460 IRF7457 VDSS = 20V VDSS = 20V ID = 10A @ 758C ID = 12A @ 708C RDS(ON) = , the IRF7460 and IRF7457 data sheets. By using equation (7), we can calculate the switching losses. PSW , 0.1uF Comp2 PGood SS R5 1K R9 1K Q5 IRF7457 Rt Sync C4 1uF C13 VC L Vcc VccLDO VSEN33 VOUT3 LDrv1 PGnd Q3 IRF7457 VcH1 VcH2 HDrv1 1uF C14 2x 47uF Q2 IRF7460 L3 4.7uH 1.8V @ 8A C16 2x 150uF R7 442V C17 2x International Rectifier
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PD94251 L1218 C2660 2003p ECJ2VC1H471J erj-m1wsf5mou 24-PIN
Abstract: PD- 93882A PROVISIONAL SMPS MOSFET IRF7457 HEXFET® Power MOSFET l Applications High Frequency DC-DC Converters with Synchronous Rectification VDSS 20V RDS(on) max 0.007 ID 15A , on page 4 www.irf.com 1 5/1/00 IRF7457 Static @ TJ = 25°C (unless otherwise specified , =10V di/dt = 100A/us 2 www.irf.com IRF7457 SO-8 Package Details D -B - D IM 5 IN C H E , 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 3 IRF7457 SO-8 Tape and Reel TER M IN AL International Rectifier
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Abstract: switching losses do not exceed the package ratings or violate the overall thermal budget. Choose IRF7457 , -Pin package. tr td(OFF) tf Figure 13 - Switching time waveforms. From IRF7457 data sheet we obtain: IRF7457 tr = 16ns tf = 7ns These values are taken under a certain condition test. For more details please refer to the IRF7457 data sheet. The MOSFET have the following data: IRF7457 VDSS = , 7.8K SS2 / SD C14 2x 47uF 16TPB47M Q2 IRF7457 L3 VSEN1 D2 BAT54A VSEN1 VSEN2 International Rectifier
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IRU3146 IR3621 6TPB330M schematic diagram PWM 12V 30a 475KHz 150uf sanyo IRU3146CF 500KH IRF7910 28-PIN
Abstract: control MOSFET and IRF7457 for synchronous MOSFET. These devices provide low onresistance in a compact SOIC 8-Pin package. The MOSFETs have the following data: IRF7460 IRF7457 VDSS = 20V VDSS = 20V ID , are taken under a certain condition test. For more detail please refer to the IRF7460 and IRF7457 , IRU3046 Q3 IRF7457 C16 2x 150uF R7 442V Fb1 VREF C17 2x 150uF Vp2 HDrv2 R3 Q4 IRF7457 Comp1 2.5V @ 8A 3.9uH Q5 IRF7457 LDrv2 R4 PGood R8 1K L4 22K C9 25K International Rectifier
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200-400kHz D03316p-102 BAT54 analog switch circuit using mosfet IRU3046CF
Abstract: control MOSFET and IRF7457 for synchronous MOSFET. These devices provide low onresistance in a compact SOIC 8-Pin package. The MOSFETs have the following data: IRF7460 IRF7457 VDSS = 20V VDSS = 20V ID , ILOAD = Load Current From IRF7460 and IRF7457 data sheet we obtain: IRF7460 IRF7457 tr = 16ns tr , more detail please refer to the IRF7460 and IRF7457 data sheets. By using equation (7), we can , Rt R2 1K 1.8V @ 8A Q3 IRF7457 C16 2x 150uF PGnd U1 IRU3046 Sync R7 442V International Rectifier
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power mosfet schematic circuit irf7457 cross reference DO5022P-332HC DO5022P-222HC DI-130 R16C2
Abstract: losses do not exceed the package ratings or violate the overall thermal budget. Choose IRF7457 both for , MOSFET have the following data: IRF7457 VDSS = 20V ID = 15A RDS(ON) = 7mV The total conduction losses for , Current VDS 90% 10% VGS td(ON) tr td(OFF) tf Figure 13 - Switching time waveforms. From IRF7457 data sheet we obtain: IRF7457 tr = 16ns tf = 7ns These values are taken under a certain condition test. For more details please refer to the IRF7457 data sheet. By using equation (9), we can calculate International Rectifier
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I22D2
Abstract: 1uF HDrv1 Q2 IRF7460 L3 LDrv1 VOUT3 Q3 IRF7457 PGnd R7 442V U1 R2 1K , IRF7457 3.9uH Q5 IRF7457 Comp1 LDrv2 R4 C9 25K 1500pF PGood C10 0.1uF 1.8V @ 8A C16 , Rt C24 2200pF C14 470pF V REF Sync R13 15K R16 Q2 IRF7457 LDrv1 VOUT3 , IRF7460 Q5 IRF7457 R12 1K C23 1uF L4 3.3uH C26 470pF C19,C20,C21 3x 150uF R17 5mV International Rectifier
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AN-1043 AN1046 Signal Path DESIGNER
Abstract: overall thermal budget. Choose IRF7457 both for control and synchronous MOSFET. This device provide low on-resistance in a compact SOIC 8-Pin package. The MOSFET have the following data: IRF7457 VDSS = 20V ID = , % VGS td(ON) tr td(OFF) tf Figure 13 - Switching time waveforms. From IRF7457 data sheet we obtain: IRF7457 tr = 16ns tf = 7ns These values are taken under a certain condition test. For more details please refer to the IRF7457 data sheet. By using equation (9), we can calculate the total Advanced Power Electronics
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APU3146 TSSOP-28 U3146X
Abstract: 5V and 3.3V 6 supplies. The IRF7457's on resistance is less than 10.5m for VGS > 4.5V and a , junction temperature of 75.7°C. According to the IRF7457's Normalized On-Resistance vs Junction , The IRF7457's Maximum Effective Thermal Response vs Pulse Duration curve indicates that the increase , 3.3V AT 7A CLOAD(5VOUT) Q1 IRF7457 R3 10 C6 0.01uF 5VOUT 5V AT 5A + R22 2.7 I/O PIN 1 Q2 IRF7457 + 5V PCI BRIDGE CHIP I/O #128 DSOL12 F01 Figure 1. Typical Linear Technology
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LTC1644 TRANSISTOR Z4 20-PIN 6 pin mosfet Z2 design solutions MMBT2222A
Abstract: ratings or violate the overall thermal budget. Choose IRF7460 for control MOSFET and IRF7457 for , the following data: IRF7460 IRF7457 VDSS = 20V VDSS = 20V ID = 10A @ 758C ID = 12A @ 708C RDS(ON) = , the IRF7460 and IRF7457 data sheets. By using equation (7), we can calculate the switching losses. PSW , 0.1uF Comp2 PGood SS R5 1K R9 1K Q5 IRF7457 Rt Sync C4 1uF C13 VC L Vcc VccLDO VSEN33 VOUT3 LDrv1 PGnd Q3 IRF7457 VcH1 VcH2 HDrv1 1uF C14 2x 47uF Q2 IRF7460 L3 4.7uH 1.8V @ 8A C16 2x 150uF R7 442V C17 2x International Rectifier
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Abstract: ratings or violate the overall thermal budget. Choose IRF7460 for control MOSFET and IRF7457 for , the following data: IRF7460 IRF7457 VDSS = 20V VDSS = 20V ID = 10A @ 758C ID = 12A @ 708C RDS(ON) = , the IRF7460 and IRF7457 data sheets. By using equation (7), we can calculate the switching losses. PSW , PGood SS R5 1K R9 1K Comp1 LDrv2 Rt Sync C4 1uF C13 VC L Vcc VccLDO VSEN33 VOUT3 LDrv1 PGnd Q3 IRF7457 R7 442V Fb1 VREF Vp2 HDrv2 C17 2x 150uF Q4 IRF7457 Q5 IRF7457 L4 3.9uH 2.5V @ 8A C12 2x 150uF R8 1K International Rectifier
Original
Abstract: exceed the package ratings or violate the overall thermal budget. Choose IRF7457 both for control and , the following data: IRF7457 VDSS = 20V ID = 15A RDS(ON) = 7m The total conduction losses for each , waveforms. From IRF7457 data sheet we obtain: IRF7457 tr = 16ns tf = 7ns These values are taken under a certain condition test. For more details please refer to the IRF7457 data sheet. By using equation (9 , LDrv2 C14 2x 47uF 16TPB47M Q2 IRF7457 L3 VSEN1 R6 7.8K 1.8V @ 10A 1.7uH Q3 Advanced Power Electronics
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TRANSISTOR SL 100 voltage regulators high amp
Abstract: ratings or violate the overall thermal budget. Choose IRF7460 for control MOSFET and IRF7457 for , the following data: IRF7460 IRF7457 VDSS = 20V VDSS = 20V ID = 10A @ 758C ID = 12A @ 708C RDS , more detail please refer to the IRF7460 and IRF7457 data sheets. By using equation (7), we can , IRLR2703 R1 Fb3 C7 47uF 1K Rt R2 1K Q3 IRF7457 C16 2x 150uF R7 442V C17 2x 150uF Vp2 HDrv2 Comp1 Q4 IRF7457 R8 1K L4 1N4148 22K 2.5V @ 8A 3.9uH Q5 Advanced Power Electronics
Original
Abstract: switching losses do not exceed the package ratings or violate the overall thermal budget. Choose IRF7457 , -Pin package. tr td(OFF) tf Figure 13 - Switching time waveforms. From IRF7457 data sheet we obtain: IRF7457 tr = 16ns tf = 7ns These values are taken under a certain condition test. For more details please refer to the IRF7457 data sheet. The MOSFET have the following data: IRF7457 VDSS = , 7.8K SS2 / SD C14 2x 47uF 16TPB47M Q2 IRF7457 L3 VSEN1 D2 BAT54A VSEN1 VSEN2 International Rectifier
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CAPACITOR 47UF 25V ELECTROLYTIC electric capacitor 330uF 25V
Abstract: losses do not exceed the package ratings or violate the overall thermal budget. Choose IRF7457 both for , . The MOSFET have the following data: IRF7457 VDSS = 20V ID = 15A RDS(ON) = 7mâ"¦ The total , ) tf Figure 13 - Switching time waveforms. From IRF7457 data sheet we obtain: IRF7457 tr = 16ns , the IRF7457 data sheet. By using equation (9), we can calculate the total switching losses. PSW , 0.1uF 7.8K SS2 / SD L3 R6 7.8K 1.8V @ 10A 1.7uH Q3 IRF7457 VSEN1 HDrv2 Advanced Power Electronics
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