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TIR1000PSG4 Texas Instruments IC SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8, PLASTIC, SO-8, Microprocessor IC:Other ri Buy
TIR1000IPSR Texas Instruments Standalone IrDA Encoder & Decoder 8-SO -40 to 85 ri BuyFREE Buy
TIR1000PSR Texas Instruments Standalone IrDA Encoder & Decoder 8-SO 0 to 70 ri BuyFREE Buy
TIR1000PS Texas Instruments IC SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8, PLASTIC, SO-8, Microprocessor IC:Other ri Buy
TIR1000IPSLE Texas Instruments IC SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8, PLASTIC, SO-8, Microprocessor IC:Other ri Buy

Datasheet Search Results

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IR1000 N/A Semiconductor Master Cross Reference Guide
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1 pages,
124.32 Kb

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IR1000 N/A Shortform Transistor PDF Datasheet
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1 pages,
162.39 Kb

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IR1000 Motorola Motorola Semiconductor Data & Cross Reference Book
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1 pages,
39.77 Kb

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IR1000-01 SMC Pneumatics PRECISION REGULATOR - SERIES IR1000-IR3000
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2 pages,
282.47 Kb

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IR1000-01B SMC Pneumatics PRECISION REGULATOR - SERIES IR1000-IR3000
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2 pages,
282.47 Kb

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IR1001 N/A Semiconductor Master Cross Reference Guide
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1 pages,
124.32 Kb

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IR1001 N/A Shortform Transistor PDF Datasheet
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1 pages,
162.39 Kb

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IR1001 Motorola Motorola Semiconductor Data & Cross Reference Book
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1 pages,
39.77 Kb

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IR100-22-200 Vestal Electronic Devices, LLC Bare Radial Jumper Wire
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1 pages,
18.76 Kb

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Catalog Search Results

Catalog Datasheet Results Type PDF Document Tags
Abstract: 1N4148LC 1N4148LC Conditions IF=10mA VR=20V VR=20V, Tj=150 VR=75V IR=100uA, Tp/T=0.01, Tp=0.3ms VR=0 ... Original
datasheet

4 pages,
149.92 Kb

1N414 DO-35 C329LC 1N4148LC DO-35 abstract
datasheet frame
Abstract: Symbol VBR O C O C unless otherwise noted) Test Conditions IR=100A Min Max 80 ... Original
datasheet

2 pages,
112.58 Kb

smd diode marking c3 CDST226-G 6V 100 smd diode 1n SMD diode marking C3 sot-23 CDST226-G abstract
datasheet frame
Abstract: otherwise noted) Parameter Reverse breakdown voltage Symbol Conditions VBR IR=100A Forward ... Original
datasheet

4 pages,
85.59 Kb

sot-23 MARKING CODE CO CDST-56-G CDST-70-G CDST-99-G code a7 ta marking code a7 sot23 marking code W1 marking W1 sot23 sot-23 MARKING CODE A4 a7 marking code sot 23 CDST-99-G/70-G/56-G CDST-99-G/70-G/56-G abstract
datasheet frame
Abstract: Unit IR=100uA 30 - V VF(1) IF=0.1mA - 240 mV VF(2) IF=1mA - 320 ... Original
datasheet

4 pages,
183.64 Kb

marking ld3 B6 DIODE schottky smd transistor marking n3 smd transistor marking ld3 marking CODE n3 DIODE smd marking A1 marking K2 diode smd transistor marking jv3 diode Marking code jv3 f smd diode marking code a2 marking code a2 SMD diode DIODE SMD MARKING 5C C302N3-L BAT54N3/BAT54AN3 C302N3-L abstract
datasheet frame
Abstract: otherwise noted) Parameter Reverse breakdown voltage Symbol Conditions VBR IR=100A Forward ... Original
datasheet

4 pages,
85.46 Kb

"HF MARKING CODE" "MARKING CODE A1" marking code W1 marking A7 code a7 ta a7 marking code sot 23 marking code hf HF MARKING sot23 hf marking code HF SOT-23 sot23 HF marking W1 sot23 CDST-99-HF/70-HF/56-HF CDST-99-HF/70-HF/56-HF abstract
datasheet frame
Abstract: IF=100mA, IR=100mA 90%Recovery 0.15 Units V uA us ESJC32-08X ESJC32-08X (7.5kV/350mA ) Characteristics , rod p IF/IR=100/100mA 90% recovery 350 e nu i trr(ns) Iz (uA) 100 7 Reverse ... Original
datasheet

2 pages,
23.19 Kb

ESJC32-08X esjc ESJC32 ESJC32-08X abstract
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Abstract: 3 4 VF (V) 8 350 Dis 300 d ct. u Typical rod p IF/IR=100 ... Original
datasheet

2 pages,
22.22 Kb

ESJC35-08 ED 08 diode 80KV 50hz sine generator ESJC35 ESJC35-08 abstract
datasheet frame
Abstract: "clip bonding" IR=100uA IR=5uA Forward Voltage 1N4448WS 1N4448WS, 1N914BWS 1N914BWS IF=5.0mA 1N4148WS 1N4148WS IF= 10mA 1N4448WS 1N4448WS, 1N914BWS 1N914BWS IF ... Original
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3 pages,
439.69 Kb

SOD-323F pb 104 IR5U BZT55B 1N914BWS 1N4448WS 1N4148WS sod-323f diode 1N4448WS/1N4148WS/1N914BWS 1N4448WS/1N4148WS/1N914BWS abstract
datasheet frame
Abstract: Characteristics Type Number Reverse Breakdown Voltage Symbol IR=100uA IR=5uA V(BR) Min Max 100 ... Original
datasheet

2 pages,
149.7 Kb

LL914B LL4448 LL4148 LL34 DO-213AC smd ll4148 BV-1 JEDEC DO-213AC do213AC LL4148/LL4448/LL914B LL4148/LL4448/LL914B abstract
datasheet frame
Abstract: do-204 JEDEC do-204 Forward Voltage 1N4448M 1N4448M, 1N914BM 1N914BM 1N4148M 1N4148M 1N4448M 1N4448M, 1N914BM 1N914BM Reverse Leakage Current Min IR=100uA ... Original
datasheet

2 pages,
81.36 Kb

1N914BM 1N4148M 1N4448M 1N4148M/1N4448M/1N914BM 1N4148M/1N4448M/1N914BM abstract
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Extended Electronics Archive (Experimental)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
*$ENCRYPTED_LIB *$INTERFACE *$ * TPS61020 TPS61020 TPS61020 TPS61020 * * (C) Copyright 2009Texas Instruments Incorporated. All rights reserved. * * This model is designed as an aid for customers of Texas Instruments. * TI and its licensors and suppliers make no warranties, either expressed * or implied, with respect to this model, including the warr
www.datasheetarchive.com/download/82091099-918158ZC/slim039.zip (tps6102x.lib)
Texas Instruments 06/08/2011 217.01 Kb ZIP slim039.zip
*$ model description: "awb1n2804a" *b Device model created by analog_uprev for 1n2804a on Tue Feb 6 17:33:04 IST 2001 * Modification History: Sripada, Added New Model awbbzv55b10 ; Thursday, March 01, 2007 * Removed temp value from model awb1n957a:CCMPR00020385 CCMPR00020385 CCMPR00020385 CCMPR00020385 ; Wednesday, August 08, 2007 .subckt awb1n2804a 8 2 + params: + IC=0 + STATE=1 + STATE_FACTOR=0 + VZT=6.8 + IZT=1850.0m + ZZT=0.17 + TCBV=2.72 + IR=37.5u + VR=4.5 + IRM=75u + TMAX=150 + VJF=1.0 + MF=0.5 + ISF=1.
www.datasheetarchive.com/files/spicemodels/misc/diz.lib
Spice Models 04/10/2007 273.15 Kb LIB diz.lib
*$ model description: "awb3c91" *a Device model created by analog_uprev for 3c91 on Sat Mar 24 12:59:26 IST 2001 .subckt awb3c91 5 3 2 6 QQ8 6 1 2 M1MQ13C9X M1MQ13C9X M1MQ13C9X M1MQ13C9X .MODEL M1MQ13C9X M1MQ13C9X M1MQ13C9X M1MQ13C9X NPN TR=10.000000N 000000N 000000N 000000N VJC=700.000000M 000000M 000000M 000000M NC=2 VJE= + 900.000000M 000000M 000000M 000000M NE=2 IKR=0 NF=1 BR=362.000000M 000000M 000000M 000000M CJC=21.380000P 380000P 380000P 380000P RC= + 10 VAR=0 CJE=29.830000P 830000P 830000P 830000P XCJC=1 TF=6.930000N 930000N 930000N 930000N XTB=1.5 IS=100.000000F 000000F 000000F 000000F + IKF=300.000000MEG 000000MEG 000000MEG 000000MEG MJC=333.000000M 000000M 000000M 000000M BF=100 NR=1 MJE=500.000000M 000000M 000000M 000000M VAF= + 98 IRB=0 ISC=1N ISE=0 GI7 2 1 POLY(2) 4 3 7 3 0 0 0 0 3.000000
www.datasheetarchive.com/files/spicemodels/misc/opt.lib
Spice Models 15/06/2001 30.32 Kb LIB opt.lib
*$ENCRYPTED_LIB *$INTERFACE * PSpice Model Editor - Version 16.0.0 *$ * TPS61020 TPS61020 TPS61020 TPS61020 * * (C) Copyright 2009Texas Instruments Incorporated. All rights reserved. * * * Thismodelis designed as an aid for customers of Texas Instruments. * *TI and itslicensors and suppliers makeno warranties, either expressed * * or implied, with r
www.datasheetarchive.com/download/22211498-918156ZC/slim037.zip (tps61020avg.lib)
Texas Instruments 06/08/2011 120.93 Kb ZIP slim037.zip
ELDRS Test Report 09-289 100129 R1.1 An ISO 9001:2008 and DSCC Certified Company 1 Radiation Assured Devices 5017 N. 30th Street Colorado Springs, CO 80919 (719) 531-0800 Enhanced Low Dose Rate Sensitivity (ELDRS) Radiation Testing of the RH1034MW RH1034MW RH1034MW RH1034MW Micropower Dual Reference for Linear Technology Customer: Linear Technology, PO# 53101L 53101L 53101L 53101L RAD Job Number: 09-289 Part Type Tested: Linear Technology RH1034-1 RH1034-1 RH1034-1 RH1034-1.2 Micropower Dual Reference Traceability Information: Fab lot# WD00326 WD00326 WD00326 WD00326
www.datasheetarchive.com/download/73894363-347079ZC/rh1034 radiation test data.zip (ELDRS Report_RH1034-1.2_Fabrication Lot WD003263.1.pdf)
Linear 10/02/2010 418.78 Kb ZIP rh1034 radiation test data.zip
Total Ionizing Dose Report 09-290 100129 R1.1 An ISO 9001:2008 and DSCC Certified Company 1 Radiation Assured Devices 5017 N. 30th Street Colorado Springs, CO 80919 (719) 531-0800 Total Ionizing Dose (TID) Testing of the RH1034MW RH1034MW RH1034MW RH1034MW Micropower Dual Reference for Linear Technology Customer: Linear Technology, PO# 53101L 53101L 53101L 53101L RAD Job Number: 09-290 Part Type Tested: Linear Technology RH1034-1 RH1034-1 RH1034-1 RH1034-1.2 Micropower Dual Reference Traceability Information: Fab lot# WD003263 WD003263 WD003263 WD003263.1, Wafer# 2, Ass
www.datasheetarchive.com/download/73894363-347079ZC/rh1034 radiation test data.zip (RLAT Report_RH1034-1.2_Fabrication Lot WD003263.1.pdf)
Linear 10/02/2010 418.78 Kb ZIP rh1034 radiation test data.zip

Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
IR1000 International Rectifier NPN Darlington Transistor

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IR1001 International Rectifier NPN Darlington Transistor

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NTE Electronics Cross Reference Results

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NTE243 Buy IR1000 Buy
NTE243 Buy IR1001 Buy