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ior e78996

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ior e78996

Abstract: E78996 ior Configuration · · · High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy , 2%. INTERNATIONAL RECTIFIER bSE D 4Ô5S452 OOlbaai Ö27 INR IOR IRFK6HC50,IRFK6JC50 , INTERNATIONAL RECTIFIER bSE D MÛ55452 DOlt.332 7b3 INR IRFK6HC50.IRFK6JC50 IOR CAPACITANCE , 001ti333 bTT INR IÖR IRFK6HC50,IRFK6JC50 Tc. CASE TEMPERATURE ( °C) Fig 9. Maximum Drain
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ior e78996 E78996 ior e2711 E27114 4AS5452

ior e78996

Abstract: irfk4h450 Configuration · · · High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy , ! O O l b ^ O 4Ô4 INR IRFK4H450.IRFK4J450 IOR Fig 5. Typical Capacitance Vs , 4A55452 ODlbSTl 310 * I N R IOR IRFK4H450JRFK4J450 Fig 9. Maximum Drain Current Vs. Case , INTERNATIONAL RECTIFIER LSE D 405.5452 ODlbETE ES? INR IRFK4H450,IRFK4J450 IOR p'g 11a
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E2710/ 5545E

ior e78996

Abstract: E78996 ior Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically , H I N R IOR !RFK6H250,IRFK6J250 20us Tc - P U -S E 150°C a IQ T h V q s « , ,IRFK6J250 30000 IOR v GS C 1SS C f-s s coss » o v. ' ' " C9S c go c as - 1MH2 Ca s SHORTEO , HflSSMSS D 0 1 b 3 l S t8M B I N R IOR IRFK6H250.IRFK6J250 Tc . CASE TEMPERATURE ( °C , SI D « I N R IRFK6H250.IRFK6J250 IOR 10v Duty Factor < 0.1% _ Fig 11a. Switching
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E27111

3gu diode

Abstract: IRFK4J350 INT ERNATIONAL RE CTIFIER bSE D 4Û55452 DDlb261 471 INR Bulletin E 27106 International îïqrI R atifier · · · · >RFK4H350,IRFK4J350 Isolated Base Power HEX-pakTM Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate , %. 98 INTERNATIONAL REC TIF IE R f c . S E D B MÖ554S2 001^203 244 INR IOR , f c . S E D B 4855452 DDlbafib T53 INR IRFK4H35CURFK4J350 IOR Duty Factor s 0.1
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3gu diode TC-25 4A55M5E IRFK4H350

ior e78996

Abstract: IR E78996 INTERNATIONAL RECTIFIER bSE D m MÖ55452 DDlbEL.^ T74 INR Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p akTM Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assem bly , HflSSMSB D01b271 Sif5 INR IOR IRFK4H150.IRFK4J150 10'i 10° 101 10-> 10° JO1 VDS , 4ÔSS4S2 DDlbETM 231 INR IRFK4H150.IRFK4J150 IOR Duty Factor s 0 .1 % - Fig 11a. Sw
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IR E78996 T0-240 4A554S2

IRFK3D150

Abstract: INTERNATIONAL RECTIFIER L5E D 4 ß 5 5 4 5 S Q01fa233 71T IINR Bulletin E2797 International 1 k ? r1 R · · · e c tifie r IR F K 3 D 150 ,»R FK 3 F 150 Isolated Base Power HEX-pakTM Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically , RECTIFIER bSE » U6SS4S2 001h23i m iN R IOR IRFK3D150,IRFK3F150 Fig 1. Typical Output , INTERNATIONAL RECTIFIER bSE D 4Ö 5 S 4 5 2 0 1 b 2 3 L . 42Ö INR IOR IRFK3D150,IRFK3F150 Tc .
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K3D150

SS452

Abstract: ior e78996 INTERNATIONAL RECTIFIER bSE D m 4Ö554S2 0G:Lb221 TT7 INR Bulletin E2795 International · · I ïôrIRectifier IRFK2PC50,IRFK2FC50 Isolated Base Power HEX-pakTM Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate , L S E D 4 0 5 5 4 5 2 0 0 1 1 , 2 2 3 6 7 T I I N R IOR , Operating Area 40 INTERNATIONAL RECTIFIER fc.SE D 4&SS452 DQlb225 b42 INR IOR
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IRFK2DC50 4A5545E IRFK2DC50JRFK2FC50

B25CS120

Abstract: RKU91-04 Power Modules Thyristor/Thyristor Part Number (6) (7) - - - - International IOR ] Rectifier Vr r m >T(AV) @ Tc · t s m 0) SO Hz (A) 60 Hz (A) RthJC DC (°C/W) VDRM (V) Case Outline Number (9) Notes Case Style (A) (°C) (8) - - - - P171 P172 P173 P174 P175 P471 P472 P473 P474 P475 B25DS10 B25DS20 B25DS40 B25DS60 B25DS80 B25DS100 B25DS120 IRKT26-04 IRKT26-06 IRKT26-08 IRKT26-10 IRKT26 , File no: E78996 (1) 100% V r r m reapplied. Tj = Tj max. = 150°C. (2) Value given for RthJC is Per
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IRKT26-12 B25CS60 B25CS120 RKU91-04 IRKV26-06 ior irkt91-12 IRKT THYRISTOR THYRISTOR MODULE IRKT ior irkt91 IRKT26-14 IRKT26-16 IRKT26-18 IRKT41-04 IRKT41-06

ior e78996

Abstract: IRKCL91-06S02 Power Modules Diode/Diode, Fast Part Nu m be r Vr rm (6) (7) (8) (V) (A) (°C ) lF (A V ) @ T c >FS M d > V FM 50 H z (A) 60 H z (A) (2) (V) trr (5) (ns) A th JC DC (°C/W ) Case Outline Nu m be r (9) M2 International IOR' R e c tifie r Notes Case Style B40DL10S02 B40DL20S02 B40DL40S02 B40DL60S02 B40DL10S05 B40DL20S05 B40DL40S05 B40DL60S05 B40DL80S05 B40DL100S05 B40DL10S10 B40DL20S10 , -10S10 IRKJL91-10S10 90 70 1200 1406 1.45 1000 0.38 File no: E78996 (1) 100% Vr r m
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IRKDL91-06S02 IRKCL91-06S02 158lf IRKJL91-02S02 1406 diode fm50h 1RKC B40DL40S10 B40DL60S10 B40DL80S10 B40DL100S10 IRKDL56-02S02 IRKDL56-04S02

ior e78996

Abstract: E78996 INTERNATIONAL RECTIFIER bSE D â  4655452 OQlbE'ìT bOl â  INR Bulletin E27109 International SoRiRectifier IRFK4HE50,IRFK4JE50 Isolated Base Power HEX-pakâ"¢ Assembly - Parallel Chip Configuration â'¢ High Current Capability. â'¢ UL recognised E78996. â'¢ Electrically Isolated Base Plate. â'¢ Easy Assembly into , . Temperature 117 INTERNATIONAL RECTIFIER b£E D 4ÛS54SS DDlbBOE TEL INR IRFK4HE50.IRFK4JE50 IOR 25000 200 eoo , INTERNATIONAL RECTIFIER bSE D â  4Ã5S45B DG1L304 ATI â  INR IR FK4H E50,1R FK4 J E50 IOR IRFK4H. or IRFK4J
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E78996 rectifier module E78996 Diode International Rectifier SSC E78996 G1 G2 inr 470 IRFK4HE50JRFK4JE50

ior e78996

Abstract: FK6H350 Bulletin E27112 International B Rectifier IR FK6H350,1R FK6 J350 Isolated Base Power HEX-pakâ"¢ Assembly - Parallel Chip Configuration â'¢ High Current Capability. â'¢ UL recognised E78996. â  Electrically Isolated Base Plate. â'¢ Easy Assembly into Equipment. Description '- The HEX-pakâ"¢ utilises , < 300ns; Duty cycle < 2%. IOR IRFK6H350,IRFK6J350 , IRFK6H350JRFK6J350 IOR 'GS = OV. I â  1MHz Liss = cgs + cgd' cds "Vss = ^gd cgd E 5 jo 2 5 VDS
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e78996 india J350 hex-pak S-162 CH-8032 IL60067 NJ07650 FL32743 CA90245

ior e78996

Abstract: irfk3d450 INTERNATIONAL RECTIFIER bSE D B 4Ô554S2 ÜQ1L2S1 7 34 INR Bulletin E27100 International i ü Rectifier IRFK3D450,IRFK3F450 Isolated Base Power H EX-pakTM Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. E , ^s; Duty cyde £ 2%. 68 INTERNATIONAL RECTIFIER bSE D 4Ö5S4S2 D01L2S3 507 INR IOR , INTERNATIONAL RECTIFIER b SE J > m 4AS54S2 OOILBSS 3flT INR IOR IRFK3D450
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4A5S452

ior e78996

Abstract: distances UL E78996 approved 40 A 70 A 85 A 110 A Description These series of T-m odules use standard , .irf.co m In te rn a tio n a l T.HF Series Bulletin 127106 rev. A 08/97 IOR Rectifier 0 , . A 08/97 T70HF. Series R th J C (DC:) = ° ' 69 K /W ~ In te rn a tio n a l IOR R ectifier , -R a te d V rrm R e a p p lie d - IOR Rectifier A t Any Rated Load C ondition And With Rated V , 7 T.HF Series Bulletin 127106 rev. A 08/97 In te rn a tio n a l IOR Rectifier 20
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1RFK4H250

Abstract: ior e78996 Bulletin E27105 International UMI Rectifier 1RFK4H250,IRFK4J250 Isolated Base Power HEX-pakâ"¢ Assembly - Parallel Chip Configuration â'¢ High Current Capability. â'¢ UL recognised E78996. â'¢ Electrically Isolated Base Plate. â'¢ Easy Assembly into Equipment. Description - The HEX-pakâ"¢ utilises the well-proven HEXFETâ"¢ die, combining low on-state resistance with high transconductance. These superior , Thermal Impedance, Junction-to-Case IRFK4H250,IRFK4J250 IOR IRFK4H. or IRFK4J. Pulse Width < 1jis
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IRFK4J450

Abstract: IRFK4H054 Bulletin E27107 International jjg Rectifier IRFK4H450,IRFK4J450 Isolated Base Power HEX-pakâ"¢ Assembly - Parallel Chip Configuration â'¢ High Current Capability. â'¢ UL recognised E78996. â'¢ Electrically Isolated Base Plate. â'¢ Easy Assembly into Equipment. Description The HEX-pakâ"¢ utilises the well-proven HEXFETâ"¢ die, combining low on-state resistance with high transconductance. These superior , Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1RFK4H450JRFK4J450 IOR 10v -T
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IRFK4H054 IRFK4J054

diode g1s

Abstract: INTERNATIONAL RECTIFIER b5E D MÛSS4S2 G D l b m 43T INR Bulletin E2790 International [ïq rI R e c tifie r · · · · IR F K 2 D 0 5 4 , IR F K 2 F 054 Isolated Base Power HEX-pakTM Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment. - Description The HEX-pakTM , RECTIFIER bSE D ·4055432 OOltlIH 14=5 INR IRFK2D054, IRFK2F054 IOR Fig 5
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diode g1s

14MQ

Abstract: IRFK4H150 Bulletin E27104 International ü®] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power HEX-pakâ"¢ Assembly - Parallel Chip Configuration â'¢ High Current Capability. â'¢ UL recognised E78996. â'¢ Electrically isolated Base Plate. â'¢ Easy Assembly into Equipment. Description The HEX-pakâ"¢ utilises the well-proven HEXFETâ"¢ die, combining low on-state resistance with high transconductance. These superior , . Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFK4H150.IRFK4J150 IOR
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14MQ
Abstract: capability High voltage ratings up to 2500V Industrial standard package UL E78996 approved Typical , /97 In te rn a tio n a l IOR Rectifier ELECTRICAL SPECIFICATIONS Voltage Ratings V oltage T , IRKDL450.S20 Series Bulletin 127403 rev. A 09/97 In te rn a tio n a l IOR Rectifier Outline Table -
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I27403

IR E78996

Abstract: diode FK 330 INTERNATIONAL RECTIFIER bSE J > Wt 4ÛSS452 001b3E3 750 INR Bulletin E27113 International IxqrIRectifier · · · · IRFK6H450,IRFK6J450 Isolated Base Power HEX-pakTM Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment. Description The HEX-pakTM utilises the well-proven HEXFETTM die, combining low , IRFK6H450.IRFK6J450 IOR Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs
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diode FK 330 6H450 T45 diode 6J450 IRFK6H450JRFK6J450

ior e78996

Abstract: IRFK3D450 Bulletin E27100 International ^qr] Rectifier IRFK3P450,IRFK3F450 Isolated Base Power HEX-pakâ"¢ Assembly - Half Bridge Configuration â'¢ High Current Capability. â'¢ UL recognised E78996. â  Electrically Isolated Base Plate. â  Easy Assembly into Equipment. Description The HEX-pakâ"¢ utilises the well-proven HEXFETâ"¢ die, combining low on-state resistance with high transconductance. These superior , . Switching Time Test Circuit td(on) tr 1'lir" tf Fig 11b. Switching Time Waveforms IOR IRFK3D450
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MJW/1/92
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