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Abstract: 50V 50V 60V 70V 80V 50V 100V 100V 80V 80V 80V 60V 60V 80V 80V 80V 80V 80V 80V 80V , 60V 60V 60V 60V 60V 60V 60V 60V 60V 80V 80V 80V 80V 80V 80V 80V 80V 80V 80V 100V 100V 100V 100V 100V 100V 100V 100V 100V 100V 60V 0.2A 0.03A 0.03A 0.03A 0.05A 2.5A , / 50mA 10MHz 0.15W V / 0mA 15MHz 0.35W 50 150 2V / 500mA 100MHz 11.5W 100 300 2V / 500mA 100MHz 11.5W 250 2V / 500mA 100MHz 11.5W 50 150 2V / 500mA 100MHz 11.5W 100 300 2V / 500mA -
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2C444 Diode 400V 5A lm1083 transistor 2n1208 BZY55C bc109 spice IRF9024 2C415 2C425 2C746 2N1131L 2N1132
Abstract: 2 -2 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL , equally Ptot Thermal Resistance - Junction to Ambient* Any single die on Both die on equally , the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 375 , -5 V IE=-100u A VCB=100V VCB=100V,T amb =100°C Collector Cutoff Current ICBO -0.1 -10 uA uA VCB=-100V VCB=-100V, Tamb=100°C uA VEB=4V, IC =0 Emitter Cutoff Current Zetex Semiconductors
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ZDT6753 FZT653 FZT753 t6753 transistor ic1A ic1a DSA003725 T6753 100MH
Abstract: BD682 BD684 TO-126 4A 45V 60V 80V 100V 120 V 750 al 1.5A 2.5V at 1.5A/6mA BDT61 BDT61A BDT61B BDT61C BDT60 BDT60A BDT60B BDT60C TO-220AB 4A 60V 80V 100V 120V 750 at 1.5A 2.5V at 1.5A/6mA PNP = 1.5/JS NPN = 4.5/iS at 1.5A TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TO-220AB 5A 60V 80V 100V 1000 at 3A 2Vat3A/12mA â'" BD645 BD647 BD649 BD651 BD646 BD648 BD650 BD652 TO-220AB 8A 60V 80V 100V 120V 750 at 3A 2V at , Time) TIP130 TIPÃ31 TIP132 TIP135 TIP136 TIP137 TO-220AB 8A 60V 80V 100V 500 at 1A and 1000 at 4A 2V -
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BDT63A BDT64 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR BDV65 PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
Abstract: ) MAX. at I q/Ib TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 TO-220AB 2A 60V 80V 100V , BD678 BD 680 BD682 BD684 TO-126 4A 45V 60V 80V 100V 120 V 750 a t 1.5A 2.5V at , -220AB 8A 60V 80V 100V 120V 750 at 3A 2V at 3 A/12m A 5fts at 3A BD 645F B D 647F , TIP135 TIP136 TIP137 T O -220AB 8A 60V 80V 100V 500 at 1A and 1000 at 4A 2V at 4A , TO-220AB 10A 60V 80V 100V 120V 1000 at 3A 2 V a t3 A /1 2 m A PN P =2.5juS NPN = 5 -
OCR Scan
53T31 BD679 BD681 BD651F BU806
Abstract: ). +4.5V to 18V SW Voltage (VSW) .-1.0V to 100V SW slew rate , driven with alternating signals from the PWM controller. The input voltage can be up to 100V in this , . 13 MP1907â'•100V, 2.5A, HIGH FREQUENCY HALF-BRIDGE GATE DRIVER This topology lends itself well to , MP1907 100V, 2.5A, High Frequency Half-bridge Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP1907 is a high frequency, 100V half bridge N-channel power MOSFET driver Monolithic Power Systems
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QFN10 MO-229
Abstract: 2 -2 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL , Â"onÂ" equally Ptot Thermal Resistance - Junction to Ambient* Any single die Â"onÂ" Both die , to 2 inches square. 3 - 375 ZDT6753 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25 , Collector Cutoff Current ICBO 0.1 10 ÂuA ÂuA VCB=100V VCB=100V,T amb =100°C Emitter , 1 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 55 25 200 -
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Abstract: Thick Film Chip Resistor Arrays & Networks HOW TO ORDER CRN16 8 SU 103 J A , to Circuit Schematic V , SU, or SC Resistance Tolerances of +5%, +2%, and +1% Convex and Concave , * Voltage Working Overload Operating Temperature CRN06-2V 2 4 Isolated C 10- 1M ±5% 0.031W 25V 50V -55°C ~ +125°C CRN10-2V 2 4 Isolated C 10- 1M  , ±5% 0.063W 25V 50V -55°C ~ +125°C CRN16-2V 2 4 Isolated B, C 0, 10- 1M  American Accurate Components
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CRN06 CRN10 CRN21 CRN31 CRN76 CRN06-2V
Abstract: Gold Terminaion Thick Film Chip Resistor Arrays & Networks HOW TO ORDER CRNG16 8 SU 103 , Circuit Type/Pattern Refer to Circuit Schematic V , SU, or SC Resistance Tolerances of +5%, +2%, and , Rating* Voltage Working Overload Operating Temperature CRNG06-2V 2 4 Isolated C 10- 1M ±5% 0.031W 25V 50V -55°C ~ +125°C CRNG10-2V 2 4 Isolated C , 10- 1M ±1%, ±5% 0.063W 25V 50V -55°C ~ +125°C CRNG16-2V 2 4 Isolated American Accurate Components
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CRNG06 CRNG10 CRNG21 CRNG31 CRNG76 CRNG06-2V
Abstract: does not interfere with the ground path of the battery charger. The input common-mode range of 0 to , even when connected to a 2cell battery pack in deep discharge. The user can set the full-scale current , a simple and compact current-sense solution. For higher bandwidth applications, refer to the , Current-Sense Solution 30uA Supply Current +2.7V to +28V Operating Supply 0.18% Full-Scale Accuracy Low 1.5 Output Impedance Three Gain Versions Available +20V/V (MAX4372T) +50V/V (MAX4372F) +100V/V Maxim Integrated Products
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MAX4372H MAX4372TEUK-T MAX4372TESA MAX4372 MAX4173T/F/H MAX4372FEUK-T MAX4372FESA
Abstract: does not interfere with the ground path of the battery charger. The input common-mode range of 0 to , even when connected to a 2cell battery pack in deep discharge. The user can set the full-scale current , a simple and compact current-sense solution. For higher bandwidth applications, refer to the , Current-Sense Solution o 30uA Supply Current o +2.7V to +28V Operating Supply o 0.18% Full-Scale Accuracy o Low 1.5 Output Impedance o Three Gain Versions Available +20V/V (MAX4372T) +50V/V (MAX4372F) +100V Maxim Integrated Products
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ADIU MAX4372T/F/H
Abstract: Voltage (VSW) .-1.0V to 100V SW slew rate , driven with alternating signals from the PWM controller. The input voltage can be up to 100V in this , . 13 MP1907â'•100V, 2.5A, HIGH FREQUENCY HALF-BRIDGE GATE DRIVER This topology lends itself well to , MP1907 100V, 2.5A, High Frequency Half-bridge Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP1907 is a high frequency, 100V half bridge N-channel power MOSFET driver Monolithic Power Systems
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Abstract: Thick Film Chip Resistor Arrays & Networks Tin Lead Termination HOW TO ORDER CRNS16 8 SU , Circuit Type/Pattern Refer to Circuit Schematic V , SU, or SC Resistance Tolerances of +5%, +2%, and , Power Rating* Voltage Working Overload Operating Temperature CRNS06-2V 2 4 Isolated C 10- 1M ±5% 0.031W 25V 50V -55°C ~ +125°C CRNS10-2V 2 4 , Isolated B, C 10- 1M ±1%, ±5% 0.063W 25V 50V -55°C ~ +125°C CRNS16-2V 2 4 American Accurate Components
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CRNS06 CRNS10 CRNS21 CRNS31 CRNS76 CRNS06-2V
Abstract: (MAX4372T) 50V/V (MAX4372F) 100V/V (MAX4372H) o 30uA Supply Current o 2.7V to 28V Operating Supply o , 100V/V), this device operates from a single 2.7V to 28V supply and consumes only 30uA. It features a , + > 2V 0 1 VRS+ 2V -25 2 VRS+ > 2V 0 2 VRS+ 2V -50 150 Gain = 100V/V , charger. The input common-mode range of 0 to 28V is independent of the supply voltage and ensures that the current-sense feedback remains viable even when connected to a 2-cell battery pack in deep discharge. The Maxim Integrated Products
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Abstract: PARTMARKING DETAIL 0.6 FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS , /IB=10 VCE=2V 0.8 V 0.8 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 , SYMBOL MIN. 120 V(BR)CBO 2 W -55 to +150 °C 1 TYP. MAX. UNIT V CONDITIONS , ) 0.13 0.23 0.9 0.1 10 0.1 0.3 0.5 1.25 V V V VCB=100V VCB=100V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* VBE(on) 0.8 1.0 V IC=1A, VCE =2V* MHz Zetex Semiconductors
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DSA003712 IC/10
Abstract: + -=2V 0.8 0.6 1 DC 0.1 SYMBOL MIN. -120 V(BR)CBO 2 W -55 to +150 °C u , voltage * Excellent hFE specified up to 2A VCEO -100 V Emitter-Base Voltage - (Volts) - Gain V+- =2V 1.0 V h 0.8 0.6 10 0.0001 0.001 0.01 0.1 1 IC - , Collector Current (A) V - (Volts) V+ -=2V 0.8 0.6 1 DC 0.1 SYMBOL MIN. -120 V(BR)CBO 2 W -55 to +150 °C u UNIT V CONDITIONS. IC=-100uA V IC Zetex Semiconductors
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DSA003715
Abstract: ® 20mA TO-39 2N 3566 300mW 200mA 40V 30V 5V 150/600 ® 10V s 150mA 1.00V a 100/10.0mA 25pF 40MHz ® 30mA , 50V 30V 5V 1 00/300 ® 2V , TO-106 2N 5449 360mW 800mA 40V 20V 5V 100/300 ® 2V a 50mA 0.60V p 100/10.0mA 12pF 100MHz 9 50mA TO -
OCR Scan
2N3569 2N3566 2n3642 2N3567 BC138 bc136 150MH T0-105 250MH
Abstract: without notification 08/24/07 Custom solutions are available. HOW TO ORDER CRN16 8 SL 103 , JISC5202 Circuit Type/Pattern Refer to Circuit Schematic V , SU, SL, or SC component count , Rating* Voltage Working Overload Operating Temperature CRN06-2V 2 4 Isolated C 10- 1M ±5% 0.031W 25V 50V -55°C ~ +125°C CRN10-2V 2 4 Isolated C 10 , - 1M ±1%, ±5% 0.063W 25V 50V -55°C ~ +125°C CRN16-2V 2 4 Isolated B, C American Accurate Components
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CRN10-4V crn16-8 resistor network concave EIA575 CRN10-2V CRN16-2V CRN16-8V CRN16-8SU
Abstract: versions (T = +20V/V, F = +50V/V, H = +100V/V) and use an external sense resistor to set the sensitivity , 2.0 VRS+ > 2V 0 4 VRS+ 2V -50 Gain = +20V/V, +50V/V 150 170 Gain = +100V/V , Supply Current o Single +2.7V to +28V Operating Supply o 0.66% Full-Scale Accuracy o Internal Bandgap Reference o Latching Comparator Output o Three Gain Versions Available (+20V/V, +50V/V, +100V/V) o Wide 0 to +28V Common-Mode Range, Independent of Supply Voltage Ordering Information PART TEMP Maxim Integrated Products
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MAX4373TEUA MAX4373TESA MAX4373FEUA MAX4373 MAX4375 comparator 12v WINDOW COMPARATOR MAX4373FESA MAX4373HEUA MAX4373HESA
Abstract: Collector ­ Base Voltage 120V -120V VCEO Collector ­ Emitter Voltage 100V -100V VEBO , 8mW/°C ­55 to 150°C 125°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are Semelab
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ZTX653DCSM ZTX753DCSM ZTX653 ZTX753 zxt753 ZTX653 equivalent ZTX753 data 500mAVCC ZXT753
Abstract: - Ambient Thermal Resistance 120V 100V 5V 2A 2A 1W 8mW/°C ­55 to 150°C 125°C/W ZTX753 -120V -100V -5V -2A -2A Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions , = 100V TC = 100°C VEB = 4V IC = 500mA IB = 50mA* IB = 100mA* IB = 200mA* IB = 100mA* VCE = 2V* VCE = Semelab
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