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CS43L21-CNZ Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, 5 X 5 MM, LEAD FREE, MO-220, QFN-32 visit Digikey Buy
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CS43L22-CNZR Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, 6 X 6 MM, LEAD FREE, MO-220, QFN-40 visit Digikey Buy
CS53L21-CNZ Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, 5 X 5 MM, LEAD FREE, MO-220, QFN-32 visit Digikey Buy

inverter+12+V+to+220+V

Catalog Datasheet MFG & Type PDF Document Tags

B2U 250

Abstract: Semikron SKB 2/12 VCE = 25 V f = 1 MHz - -3300 500 220 - 44 56 380 70 8 5 , Class F 55/150/56 D1-4 9) V V A A V W °C V 600 1800 D7 15 30 200 200 D8 50 100 550 1500 Conditions 1) min. typ. max. V(BR)CES VGE(th) ICES VGE = 0, IC = 1 mA VGE = VCE, IC = 2 mA Tj = 25 °C VGE = 0 VCE = VCES Tj = 125 °C VGE = 20 V, VCE = 0 IC = 50 A VGE = 15 V; IC = 75 A Tj = 25 (125) °C VCE = 20 V, IC = 50 A Units -6,5 1
SEMIKRON
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IGBT

Abstract: igbt subcircuit NMOS (LEVEL=3 VTO=0 KP=5) .MODEL QOUT PNP (IS=377F NF=1.2 BF=5.1 CJE=3.48N + TF=24.3N XTB=1.3) .MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=36.1M ETA=2M + VTO=5.2 KP=2.12) .MODEL DR D (IS=37.7F CJO=100P VJ , effects. 71 V(71) COLLECTR DLV DR R2 1 MLV SW RLV 1 96 94 D2 DLIM D1 DLIM 92 DHV DR ESD POLY(1) CGD 1N 93 R1 1 VFB 0 FFB VFB CGC 1P RC .025 71 1 V(72) GATE Q1 QOUT 91 DBE DE 85 72 M1 MFIN 73 V(73) EMITTER EGD 1 M1 MFIN 72 82 81 Q1 QOUT Figure 1. Basic IGBT
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SKM 75 GAL 123 IGBT

Abstract: semikron SKD 75 gal ) °C2) ­ ­ ­ ­ ­ ­ 2,0(1,8) 2,3(2,1) 1,1 45 12(16) 1(2,7) 2,5 ­ 1,2 70 ­ ­ V , D1-6 9) V V A A V W °C V 600 1800 D7 15 30 200 200 D8 30 60 350 600 A A A A2s min. typ. max. V V mA mA nA V V S Preliminary Data Units ­ 6 , brake chopper 7D-Pack = 7 Diodes Pack Characteristics Symbol Conditions 1) V(BR)CES VGE(th , = 20 V, VCE = 0 IC = 50 A VGE = 15 V; IC = 75 A Tj = 25 (125) °C VCE = 20 V, IC = 25 A
SEMIKRON
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500w inverter circuit diagram

Abstract: TRIAC Soft start circuit = threshold voltage of triac = 1.1 V rt = on state triac resistance = 49 mohms for AVS12CB: VTO = , operates on two mains voltage ranges : ­ On range I (110 VRMS) the AC voltage varies from 88 to 132 V and the triac is ON : the bridge operates as voltage doubling circuit. ­ On range II (220 VRMS) the AC voltage varies from 176 V to 276 V and the triac is OFF : the circuit operates as full wave , becomes lower than VTH - VH. There are two options (V mode on pin 7) : ­ V mode = VDD ; the triac
STMicroelectronics
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AVS12 AVS10CB 500w inverter circuit diagram TRIAC Soft start circuit triac inverter triac control circuit diagram Triac soft start condensator datasheet AVS10 AN390/1090 1N4007 AVS1ACP08

PSB 50

Abstract: psb50 Single Phase Rectifier Bridges PSB 50 IdAVM VRRM = 72 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 50/08 PSB 50/12 PSB 50/14 PSB 50/16 PSB 50/18 ~ ~ Symbol Test Conditions IdAVM IFSM , A2 s A2 s -40 . + 150 150 -40 . + 125 °C °C °C 2500 3000 V V 5 5 Nm Nm 220 g i2 dt TVJ TVJM Tstg VISOL 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1
POWERSEM
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PSB 50 psb50 psb 80

PSD 50

Abstract: Three Phase Rectifier Bridges PSD 50 IdAVM VRRM = 80 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 50/08 PSD 50/12 PSD 50/14 PSD 50/16 PSD 50/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM , A2 s A2 s -40 . + 150 150 -40 . + 125 °C °C °C 2500 3000 V V 5 5 Nm Nm 220 g i2 dt TVJ TVJM Tstg VISOL 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1
POWERSEM
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PSD 50

FDP3682

Abstract: kp32 tube PowerTrench® MOSFET 100 V, 32 A, 36 m Features · RDS(on) = 32 m ( Typ.) @ VGS = 10 V, ID = 32 A · QG(tot) = 18.5 nC( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse , developmental type 82755 D D G G S D2-PAK (TO-263) G D S TO-220 S MOSFET Maximum , 175 A A A A mJ W W/oC oC FDB3682 / FDP3682 100 ±20 Unit V V Thermal Characteristics R JC R JA R JA Thermal Resistance Junction to Case TO-220, TO-263, Max. Thermal Resistance Junction to
Fairchild Semiconductor
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kp32 tube

22 neb 063

Abstract: semikron skiip 24 nab 125 t 12 2. Common characteristics of MiniSKiiP MiniSKiiP 600 V ICop / IC 1.2 Mini0607 Tj = 150 °C , / 30 36 / 24 72 / 48 V V A A A A 800 25 370 680 ­ 40 . . . + 150 ­ 40 . . . + 125 , -phase bridge rectifier + braking chopper + 3-phase bridge inverter V A A A2s °C °C V Bridge , - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) IC = 15 A; Tj = 125 °C tr Rgon = Rgoff = 68 td(off) inductive load tf Eon + Eoff Cies VCE = 25 V
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22 neb 063 semikron skiip 24 nab 125 t 12 semikron skiip 32 nab 125 Semikron skiip 22 nab skiip 24 nab 125 t 12 Semikron skiip 24 nab
Abstract: FDP3682 N-Channel PowerTrench® MOSFET 100 V, 32 A, 36 mΩ Features Applications â'¢ RDS(on) = 32 mâ"¦ ( Typ.) @ VGS = 10 V, ID = 32 A â'¢ Consumer Appliances â'¢ QG(tot) = 18.5 nC ( Typ.) @ VGS = 10 V â'¢ Synchronous Rectification â'¢ Low Miller Charge â'¢ Battery Protection , 82755 D GD S G TO-220 S MOSFET Maximum Ratings TC = 25°C unless otherwise noted VGS Drain to Source Voltage FDP3682 100 Unit V Gate to Source Voltage ±20 V Continuous Fairchild Semiconductor
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tc143e

Abstract: 25E5 tube Delay Time Fall Time Turn-Off Time V DD = 75V, ID = 16A V GS = 10V, RGS = 8.2 12 29 36 29 62 97 ns ns ns , PowerTrench® MOSFET 150 V, 37 A, 36 m Features · RDS(on) = 32 m ( Typ.) @ VGS = 10 V, ID = 16 A · QG(tot) = 39 nC ( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse , developmental type 82869 D D G G S D2-PAK (TO-263) G D S TO-220 S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol V DSS Parameter Drain to Source Voltage Gate to Source
Fairchild Semiconductor
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FDB2552 tc143e 25E5 tube m062 MOTOR marking m062 tc2-16 FDP2552

semikron skiip 24 nab 125 t 12

Abstract: 22 neb 063 © by SEMIKRON 2. Common characteristics of MiniSKiiP MiniSKiiP 600 V ICop / IC 1.2 Mini0607 , / 30 36 / 24 72 / 48 V V A A A A 800 25 370 680 ­ 40 . . . + 150 ­ 40 . . . + 125 , -phase bridge rectifier + braking chopper + 3-phase bridge inverter V A A A2s °C °C V Bridge , - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) tr IC = 15 A; Tj = 125 °C td(off) Rgon = Rgoff = 68 tf inductive load Eon + Eoff Cies VCE = 25 V
SEMIKRON
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Semikron skiip 11 neb 063 Semikron skiip 10 neb 063 Semikron skiip 22 neb 063 skiip+24+nab+125+t12 Semikron skiip 22 nab 12 semikron skiip 21 nab 063 T 40

214F3

Abstract: MK-75 savings Inverter Inductive heating Chopper IT(AV) VDRM /VRRM ITSM I2t 75 A 600~1600 V 2.00 A , Type Min Max 75 115 115 118 115 600 1600 115 30 2.00 115 20.4 0.85 115 4.88 25 115 2.20 800 115 200 115 , IT(AV) IT(RMS) VDRM VRRM IDRM IRRM ITSM It VTO rT VTM dv/dt 2 Mean on-state current RMS on-state , VRRM V Repetitive peak current Surge on-state current 2 mA KA A s*103 V m V V/s A/s us us mA V mA V °C /W °C /W V N·m N·m °C g 2 I T for fusing coordination Threshold voltage On-state
TECHSEM
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MKC75 214F3 MK-75 MKA75 MKK75 MKX75 214F3/216F3 150MA

wl3 diode

Abstract: CASED69A ) 2,5 V Vf = Vec If = 25 A Tj = 25 (125) °C- - 2,3(2,1) - V Vto Tj = 125 °C - - 1,2 V TT T = , Vec If = 40 A Tj = 25 (125) °C - 2,3(2,1) - V Vto Tj = 125 °C - 1,1 1,2 V rr Ti = 125 °C - , Id Tease = 80 °C; - - 70 A VF Tvj = 25 °C; lF = 40 A - - 1,45 V Vto Tvj = 150 °C - - 0,8 V , semikron Absolute Maximum Ratings Values Symbol Conditions ' Units VcES 1200 V VcGR Rge = 20 k£2 1200 V lc Tease = 25/80 °C 40/25 A ICM Tease = 25/80 °C; tp = 1 ms 70/50 A
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OCR Scan
CASED69A wl3 diode DIODE D16 semikron skd 32

Semitrans M SKD 100 GAL

Abstract: SKM 75 GAL 123 IGBT ) ­ ­ ­ ­ ­ ­ 2,0(1,8) 2,3(2,1) 1,1 45 12(16) 1(2,7) 2,5 ­ 1,2 70 ­ ­ V V V , 22 IC = 50 A 502soas.vpo Tj < 150 °C VGE = + 15 V tsc < 10 us L < 25 nH ICN = 50 A 12 , 9 *( >9@ Fig. 12 Typ. transfer characteristic, tp = 80 us; VCE = 20 V 0898 B 6 ­ 227 , .vpo ICpuls = 50 A VGE = 0 V f = 1 MHZ 14 10 12 Ciss 10 8 1 6 Coss 4 Crss 2 0,1 , D1-6 9) V V A A V W °C V 600 1800 D7 15 30 200 200 D8 30 60 350 600 A
SEMIKRON
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Semitrans M SKD 100 GAL SKM 75 GAL 123 IGBT skd 75 Semitrans M SKD ic 747 b6u 500 semikron M040GD12

5d4 diode

Abstract: Semitrans M SKD 100 GAL = 1 MHz - 220 300 pF td(on) ' Vec = 600 V - 44 100 ns tr Vge = + 15 V/- 15V3) - 56 100 ns , 0 V; - 2,0(1,8) 2,5 V Vf = Vec If = 25 A i Tj = 25 (125) °C - 2,3(2,1) - V Vto Tj = 125 °C - 1,1 1,2 V TT Ti = 125 °C - 45 70 Irrm If =15 A; Tj = 25 (125) °C2) - 12(16) - A Qrr If , J Vge = 0 V; - 2,0 (1,8) 2,5 V Vf = Vec If = 40 A ï Tj = 25 (125) °C - 2,3 (2,1) - V Vto Tj , = 20 V © by SEMIKRON 0898 B 6 - 227 SKD 75 GAL 123 D vge [v] 20 502Qg3.vpo 18 16 14 12 10 8
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OCR Scan
5d4 diode M0400 M04000

MKK300

Abstract: mkc30 10 8 6 4 2 0 0 4 8 12 Gate current,IGTA 16 Gate voltage,VGT V max. PGM =120W (100 s pulse) min. PG2W , savings Inverter Inductive heating Chopper IT(AV) VDRM /VRRM ITSM I2t 300 A 600~1600 V 5.60 A , ) VALUE Type Min Max 300 471 115 115 115 600 1600 115 50 5.60 115 160 0.90 115 1.17 25 115 2.20 800 115 200 115 115 30 25 1.0 20 115 0.2 0.110 2500 12 6 -40 1300 405F3 125 15 3.0 200 3.0 200 35 UNIT IT(AV) IT(RMS) VDRM VRRM IDRM IRRM ITSM It VTO rT VTM dv/dt 2 Mean on-state current RMS on-state
TECHSEM
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MKK300 MKX300 mkc30 MKC300 MKA300 MK300

39-12ho7

Abstract: 3 phase rectifier thyristor bridge VTO 39 IdAV = 39 A VRRM = 600-1200 V Three Phase Rectifier Bridge Priliminary data VRSM VDSM VRRM VDRM V V 700 900 1300 600 800 1200 H F Type Symbol , rights reserved 1-2 VTO 39 Symbol Conditions Characteristic Values ID, IR TVJ = TVJM , ; per thyristor) ITSM E72873 N L I VTO 39-06ho7 VTO 39-08ho7 VTO 39-12ho7 J M Maximum Ratings Features · Package with DCB ceramic base plate · Isolation voltage 3000 V~ · Planar
IXYS
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39-12ho7 3 phase rectifier thyristor bridge

SKM50GB

Abstract: skm 22 gal 123 9fs CcHC Cies Coes Cres Lce td{on) tr td Diodes 8) Vp = V ec V f = V ec Vto n , ns ns ns mWs mWs V V V mi l A HC V V V m ii A nc ^'C/W °C/W >C/W B 6 - 17 GB GAL _ 3300 500 220 , (125) °C2 > F = 40 A; Tj = 25 (125) °CS ) F F 2,2 _ _ _ - 1,2 22 _ - V f = Vec Vto rr , ) Calculation elements and equations VoctV) Fig. 12 Typ. transfer characteristic, tp * 80 |is; V ce » 20 V , charge characteristic t(M] S 0 -12.vp o Tj = 125 °C V ce= 6 0 0 V V ge = ± 15 V Rgon " 2 2 Q S
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OCR Scan
SKM50GB skm 22 gal 123 SKM50 CASED61

SKM 200 CIRCUIT

Abstract: : VF = VEC IF = 400 A; VGE = 0 V; Tj = 25 (125) °C VTO Tj = 25 (125) °C Tj = 25 (125) °C rT IRRM IF = , 1,8 1,1 3,3 V V m A uC mJ V V m A uC mJ ,?0DUNHWLQ?)5$0('$7?GDWEO?%LJEW?JEGIP 0,12 0,25 0 , = 150 °C Tcase = 25 °C, unless otherwise specified Values 1200 310 (220) 610 (440) ± 20 ­ 40 . +150 (125) 2500 250 (170) 620 (440) Units V A A V °C V A A A A A A SEMITRANSTM M Trench IGBT , (1,6) 1,0 (0,8) 3,0 (3,9) tbd tbd tbd max. 6,5 1,3 1,2 4,7 2,15 Units V mA V m V nF nF nF nH
SEMIKRON
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SKM 200 CIRCUIT

BSM25GP120 b2

Abstract: BSM50GD120DN2E3226 RthJC K/W Id A Vto V rT m @ 80°C Low Loss 2. Generation FB6R06VL4 FB10R06VL4 , TC = 80°C Vto V rT m VCES V Brake Chopper IC,IGBT A RthJC K/W Tvj = 150 , RthJC K/W Vto V rT m VCES V Brake Chopper IC,IGBT A RthJC K/W 1,95 1,95 1,95 , Accessories Explanations 12 IGBT Standard Modules 1200 V ­ Type Type GAL Chopper GAR Chopper , modules VRRM V 3300 3300 3300 3300 200 400 800 1200 1 2 4 6 220 440 900 1320
Eupec
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FP15R12YT3 BSM25GP120 b2 BSM50GD120DN2E3226 BSM15GP120 b2 FS10R06VL4_B2 BSM35GP120 FS10R06VL4 FB10R06KL4 FB10R06KL4G FP10R06KL4 FB15R06KL4 FP15R06KL4 FB20R06KL4
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