500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
CS43L21-CNZR Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, 5 X 5 MM, LEAD FREE, MO-220, QFN-32 visit Digikey
CS43L21-DNZ Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, 5 X 5 MM, LEAD FREE, MO-220, QFN-32 visit Digikey
CS43L21-CNZ Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, 5 X 5 MM, LEAD FREE, MO-220, QFN-32 visit Digikey
CS43L22-CNZ Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, 6 X 6 MM, LEAD FREE, MO-220, QFN-40 visit Digikey
CS43L22-CNZR Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, 6 X 6 MM, LEAD FREE, MO-220, QFN-40 visit Digikey
CS53L21-DNZ Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, 5 X 5 MM, LEAD FREE, MO-220, QFN-32 visit Digikey

inverter+12+V+to+220+V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: VCE = 25 V f = 1 MHz - -3300 500 220 - 44 56 380 70 8 5 , Class F 55/150/56 D1-4 9) V V A A V W °C V 600 1800 D7 15 30 200 200 D8 50 100 550 1500 Conditions 1) min. typ. max. V(BR)CES VGE(th) ICES VGE = 0, IC = 1 mA VGE = VCE, IC = 2 mA Tj = 25 °C VGE = 0 VCE = VCES Tj = 125 °C VGE = 20 V, VCE = 0 IC = 50 A VGE = 15 V; IC = 75 A Tj = 25 (125) °C VCE = 20 V, IC = 50 A Units -6,5 1 SEMIKRON
Original
B2U 250 Semikron SKB 2/12 3 phase rectifier circuit diagram igbt SEMIKRON book semikron skb B75GHL 75GD123D 22GD123D B75GHL-B
Abstract: NMOS (LEVEL=3 VTO=0 KP=5) .MODEL QOUT PNP (IS=377F NF=1.2 BF=5.1 CJE=3.48N + TF=24.3N XTB=1.3) .MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=36.1M ETA=2M + VTO=5.2 KP=2.12) .MODEL DR D (IS=37.7F CJO=100P VJ , effects. 71 V(71) COLLECTR DLV DR R2 1 MLV SW RLV 1 96 94 D2 DLIM D1 DLIM 92 DHV DR ESD POLY(1) CGD 1N 93 R1 1 VFB 0 FFB VFB CGC 1P RC .025 71 1 V(72) GATE Q1 QOUT 91 DBE DE 85 72 M1 MFIN 73 V(73) EMITTER EGD 1 M1 MFIN 72 82 81 Q1 QOUT Figure 1. Basic IGBT -
Original
igbt subcircuit Spice Model for TMOS Power MOSFETs igbt spice igbt spice model igbt testing KP21 IRGBC40U
Abstract: ) °C2) ­ ­ ­ ­ ­ ­ 2,0(1,8) 2,3(2,1) 1,1 45 12(16) 1(2,7) 2,5 ­ 1,2 70 ­ ­ V , D1-6 9) V V A A V W °C V 600 1800 D7 15 30 200 200 D8 30 60 350 600 A A A A2s min. typ. max. V V mA mA nA V V S Preliminary Data Units ­ 6 , brake chopper 7D-Pack = 7 Diodes Pack Characteristics Symbol Conditions 1) V(BR)CES VGE(th , = 20 V, VCE = 0 IC = 50 A VGE = 15 V; IC = 75 A Tj = 25 (125) °C VCE = 20 V, IC = 25 A SEMIKRON
Original
SKM 75 GAL 123 IGBT semikron SKD 75 gal Semitrans M SKD 100 GAL B6U 380 Semitrans M SKD brake chopper
Abstract: = threshold voltage of triac = 1.1 V rt = on state triac resistance = 49 mohms for AVS12CB: VTO = , operates on two mains voltage ranges : ­ On range I (110 VRMS) the AC voltage varies from 88 to 132 V and the triac is ON : the bridge operates as voltage doubling circuit. ­ On range II (220 VRMS) the AC voltage varies from 176 V to 276 V and the triac is OFF : the circuit operates as full wave , becomes lower than VTH - VH. There are two options (V mode on pin 7) : ­ V mode = VDD ; the triac STMicroelectronics
Original
AVS12 AVS10CB 500w inverter circuit diagram TRIAC Soft start circuit triac inverter triac control circuit diagram Triac soft start condensator datasheet AVS10 AN390/1090 1N4007 AVS1ACP08
Abstract: Single Phase Rectifier Bridges PSB 50 IdAVM VRRM = 72 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 50/08 PSB 50/12 PSB 50/14 PSB 50/16 PSB 50/18 ~ ~ Symbol Test Conditions IdAVM IFSM , A2 s A2 s -40 . + 150 150 -40 . + 125 °C °C °C 2500 3000 V V 5 5 Nm Nm 220 g i2 dt TVJ TVJM Tstg VISOL 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1 POWERSEM
Original
psb50 psb 80
Abstract: Three Phase Rectifier Bridges PSD 50 IdAVM VRRM = 80 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 50/08 PSD 50/12 PSD 50/14 PSD 50/16 PSD 50/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM , A2 s A2 s -40 . + 150 150 -40 . + 125 °C °C °C 2500 3000 V V 5 5 Nm Nm 220 g i2 dt TVJ TVJM Tstg VISOL 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1 POWERSEM
Original
Abstract: PowerTrench® MOSFET 100 V, 32 A, 36 m Features · RDS(on) = 32 m ( Typ.) @ VGS = 10 V, ID = 32 A · QG(tot) = 18.5 nC( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse , developmental type 82755 D D G G S D2-PAK (TO-263) G D S TO-220 S MOSFET Maximum , 175 A A A A mJ W W/oC oC FDB3682 / FDP3682 100 ±20 Unit V V Thermal Characteristics R JC R JA R JA Thermal Resistance Junction to Case TO-220, TO-263, Max. Thermal Resistance Junction to Fairchild Semiconductor
Original
kp32 tube
Abstract: 2. Common characteristics of MiniSKiiP MiniSKiiP 600 V ICop / IC 1.2 Mini0607 Tj = 150 °C , / 30 36 / 24 72 / 48 V V A A A A 800 25 370 680 ­ 40 . . . + 150 ­ 40 . . . + 125 , -phase bridge rectifier + braking chopper + 3-phase bridge inverter V A A A2s °C °C V Bridge , - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) IC = 15 A; Tj = 125 °C tr Rgon = Rgoff = 68 td(off) inductive load tf Eon + Eoff Cies VCE = 25 V SEMIKRON
Original
22 neb 063 semikron skiip 24 nab 125 t 12 semikron skiip 32 nab 125 Semikron skiip 22 nab skiip 24 nab 125 t 12 Semikron skiip 24 nab
Abstract: FDP3682 N-Channel PowerTrench® MOSFET 100 V, 32 A, 36 mΩ Features Applications â'¢ RDS(on) = 32 mâ"¦ ( Typ.) @ VGS = 10 V, ID = 32 A â'¢ Consumer Appliances â'¢ QG(tot) = 18.5 nC ( Typ.) @ VGS = 10 V â'¢ Synchronous Rectification â'¢ Low Miller Charge â'¢ Battery Protection , 82755 D GD S G TO-220 S MOSFET Maximum Ratings TC = 25°C unless otherwise noted VGS Drain to Source Voltage FDP3682 100 Unit V Gate to Source Voltage ±20 V Continuous Fairchild Semiconductor
Original
Abstract: Delay Time Fall Time Turn-Off Time V DD = 75V, ID = 16A V GS = 10V, RGS = 8.2 12 29 36 29 62 97 ns ns ns , PowerTrench® MOSFET 150 V, 37 A, 36 m Features · RDS(on) = 32 m ( Typ.) @ VGS = 10 V, ID = 16 A · QG(tot) = 39 nC ( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse , developmental type 82869 D D G G S D2-PAK (TO-263) G D S TO-220 S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol V DSS Parameter Drain to Source Voltage Gate to Source Fairchild Semiconductor
Original
FDB2552 tc143e 25E5 tube m062 MOTOR marking m062 tc2-16 FDP2552
Abstract: © by SEMIKRON 2. Common characteristics of MiniSKiiP MiniSKiiP 600 V ICop / IC 1.2 Mini0607 , / 30 36 / 24 72 / 48 V V A A A A 800 25 370 680 ­ 40 . . . + 150 ­ 40 . . . + 125 , -phase bridge rectifier + braking chopper + 3-phase bridge inverter V A A A2s °C °C V Bridge , - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) tr IC = 15 A; Tj = 125 °C td(off) Rgon = Rgoff = 68 tf inductive load Eon + Eoff Cies VCE = 25 V SEMIKRON
Original
Semikron skiip 11 neb 063 Semikron skiip 10 neb 063 Semikron skiip 22 neb 063 Semikron skiip 22 nab 12 semikron skiip 21 nab 063 T 40 skiip 24 nab 12 i t 36
Abstract: savings Inverter Inductive heating Chopper IT(AV) VDRM /VRRM ITSM I2t 75 A 600~1600 V 2.00 A , Type Min Max 75 115 115 118 115 600 1600 115 30 2.00 115 20.4 0.85 115 4.88 25 115 2.20 800 115 200 115 , IT(AV) IT(RMS) VDRM VRRM IDRM IRRM ITSM It VTO rT VTM dv/dt 2 Mean on-state current RMS on-state , VRRM V Repetitive peak current Surge on-state current 2 mA KA A s*103 V m V V/s A/s us us mA V mA V °C /W °C /W V N·m N·m °C g 2 I T for fusing coordination Threshold voltage On-state TECHSEM
Original
MKC75 214F3 MK-75 MKA75 MKK75 MKX75 214F3/216F3 150MA
Abstract: ) 2,5 V Vf = Vec If = 25 A Tj = 25 (125) °C- - 2,3(2,1) - V Vto Tj = 125 °C - - 1,2 V TT T = , Vec If = 40 A Tj = 25 (125) °C - 2,3(2,1) - V Vto Tj = 125 °C - 1,1 1,2 V rr Ti = 125 °C - , Id Tease = 80 °C; - - 70 A VF Tvj = 25 °C; lF = 40 A - - 1,45 V Vto Tvj = 150 °C - - 0,8 V , semikron Absolute Maximum Ratings Values Symbol Conditions ' Units VcES 1200 V VcGR Rge = 20 k£2 1200 V lc Tease = 25/80 °C 40/25 A ICM Tease = 25/80 °C; tp = 1 ms 70/50 A -
OCR Scan
CASED69A wl3 diode DIODE D16 semikron skd 32
Abstract: ) ­ ­ ­ ­ ­ ­ 2,0(1,8) 2,3(2,1) 1,1 45 12(16) 1(2,7) 2,5 ­ 1,2 70 ­ ­ V V V , 22 IC = 50 A 502soas.vpo Tj < 150 °C VGE = + 15 V tsc < 10 us L < 25 nH ICN = 50 A 12 , 9 *( >9@ Fig. 12 Typ. transfer characteristic, tp = 80 us; VCE = 20 V 0898 B 6 ­ 227 , .vpo ICpuls = 50 A VGE = 0 V f = 1 MHZ 14 10 12 Ciss 10 8 1 6 Coss 4 Crss 2 0,1 , D1-6 9) V V A A V W °C V 600 1800 D7 15 30 200 200 D8 30 60 350 600 A SEMIKRON
Original
skd 75 ic 747 b6u 500 semikron semikron skd 100 igbt sixpack SKM75GD123D M040GD12
Abstract: = 1 MHz - 220 300 pF td(on) ' Vec = 600 V - 44 100 ns tr Vge = + 15 V/- 15V3) - 56 100 ns , 0 V; - 2,0(1,8) 2,5 V Vf = Vec If = 25 A i Tj = 25 (125) °C - 2,3(2,1) - V Vto Tj = 125 °C - 1,1 1,2 V TT Ti = 125 °C - 45 70 Irrm If =15 A; Tj = 25 (125) °C2) - 12(16) - A Qrr If , J Vge = 0 V; - 2,0 (1,8) 2,5 V Vf = Vec If = 40 A ï Tj = 25 (125) °C - 2,3 (2,1) - V Vto Tj , = 20 V © by SEMIKRON 0898 B 6 - 227 SKD 75 GAL 123 D vge [v] 20 502Qg3.vpo 18 16 14 12 10 8 -
OCR Scan
5d4 diode M0400 M04000
Abstract: 10 8 6 4 2 0 0 4 8 12 Gate current,IGTA 16 Gate voltage,VGT V max. PGM =120W (100 s pulse) min. PG2W , savings Inverter Inductive heating Chopper IT(AV) VDRM /VRRM ITSM I2t 300 A 600~1600 V 5.60 A , ) VALUE Type Min Max 300 471 115 115 115 600 1600 115 50 5.60 115 160 0.90 115 1.17 25 115 2.20 800 115 200 115 115 30 25 1.0 20 115 0.2 0.110 2500 12 6 -40 1300 405F3 125 15 3.0 200 3.0 200 35 UNIT IT(AV) IT(RMS) VDRM VRRM IDRM IRRM ITSM It VTO rT VTM dv/dt 2 Mean on-state current RMS on-state TECHSEM
Original
MKK300 MKX300 mkc30 MKC300 MKA300 MK300
Abstract: VTO 39 IdAV = 39 A VRRM = 600-1200 V Three Phase Rectifier Bridge Priliminary data VRSM VDSM VRRM VDRM V V 700 900 1300 600 800 1200 H F Type Symbol , rights reserved 1-2 VTO 39 Symbol Conditions Characteristic Values ID, IR TVJ = TVJM , ; per thyristor) ITSM E72873 N L I VTO 39-06ho7 VTO 39-08ho7 VTO 39-12ho7 J M Maximum Ratings Features · Package with DCB ceramic base plate · Isolation voltage 3000 V~ · Planar IXYS
Original
39-12ho7 3 phase rectifier thyristor bridge
Abstract: 9fs CcHC Cies Coes Cres Lce td{on) tr td Diodes 8) Vp = V ec V f = V ec Vto n , ns ns ns mWs mWs V V V mi l A HC V V V m ii A nc ^'C/W °C/W >C/W B 6 - 17 GB GAL _ 3300 500 220 , (125) °C2 > F = 40 A; Tj = 25 (125) °CS ) F F 2,2 _ _ _ - 1,2 22 _ - V f = Vec Vto rr , ) Calculation elements and equations VoctV) Fig. 12 Typ. transfer characteristic, tp * 80 |is; V ce » 20 V , charge characteristic t(M] S 0 -12.vp o Tj = 125 °C V ce= 6 0 0 V V ge = ± 15 V Rgon " 2 2 Q S -
OCR Scan
SKM50GB skm 22 gal 123 SKM50 CASED61
Abstract: : VF = VEC IF = 400 A; VGE = 0 V; Tj = 25 (125) °C VTO Tj = 25 (125) °C Tj = 25 (125) °C rT IRRM IF = , 1,8 1,1 3,3 V V m A uC mJ V V m A uC mJ ,?0DUNHWLQ?)5$0('$7?GDWEO?%LJEW?JEGIP 0,12 0,25 0 , = 150 °C Tcase = 25 °C, unless otherwise specified Values 1200 310 (220) 610 (440) ± 20 ­ 40 . +150 (125) 2500 250 (170) 620 (440) Units V A A V °C V A A A A A A SEMITRANSTM M Trench IGBT , (1,6) 1,0 (0,8) 3,0 (3,9) tbd tbd tbd max. 6,5 1,3 1,2 4,7 2,15 Units V mA V m V nF nF nF nH SEMIKRON
Original
SKM 200 CIRCUIT
Abstract: RthJC K/W Id A Vto V rT m @ 80°C Low Loss 2. Generation FB6R06VL4 FB10R06VL4 , TC = 80°C Vto V rT m VCES V Brake Chopper IC,IGBT A RthJC K/W Tvj = 150 , RthJC K/W Vto V rT m VCES V Brake Chopper IC,IGBT A RthJC K/W 1,95 1,95 1,95 , Accessories Explanations 12 IGBT Standard Modules 1200 V ­ Type Type GAL Chopper GAR Chopper , modules VRRM V 3300 3300 3300 3300 200 400 800 1200 1 2 4 6 220 440 900 1320 Eupec
Original
FP15R12YT3 BSM25GP120 b2 BSM50GD120DN2E3226 BSM15GP120 b2 FS10R06VL4_B2 BSM35GP120 FS10R06VL4 FB10R06KL4 FB10R06KL4G FP10R06KL4 FB15R06KL4 FP15R06KL4 FB20R06KL4
Showing first 20 results.