| BU406 |
|
Bourns
|
NPN SILICON POWER TRANSISTORS |
|
Original |
PDF
|
| BU406 |
|
Fairchild Semiconductor
|
NPN EPITAXIAL SILICON TRANSISTOR |
|
Original |
PDF
|
| BU406 |
|
Fairchild Semiconductor
|
NPN Epitaxial Silicon Transistor |
|
Original |
PDF
|
| BU4-06 |
|
Frontier Electronics
|
4A SILICON SINGLE-PHASE BRIDGE RECTIFIER |
|
Original |
PDF
|
| BU406 |
|
Motorola
|
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS |
|
Original |
PDF
|
| BU406 |
|
On Semiconductor
|
NPN Power Transistors |
|
Original |
PDF
|
| BU406 |
|
On Semiconductor
|
BU406 - TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB, CASE 221A-09, 3 PIN, BIP General Purpose Power |
|
Original |
PDF
|
| BU406 |
|
Philips Semiconductors
|
Silicon Diffused Power Transistor |
|
Original |
PDF
|
| BU406 |
|
Power Innovations
|
NPN SILICON POWER TRANSISTORS |
|
Original |
PDF
|
| BU406 |
|
Sinyork
|
Mini size of Discrete semiconductor elements |
|
Original |
PDF
|
| BU406 |
|
STMicroelectronics
|
SILICON NPN SWITCHING TRANSISTOR |
|
Original |
PDF
|
| BU406 |
|
STMicroelectronics
|
NPN Epitaxial Silicon Transistor |
|
Original |
PDF
|
| BU406 |
|
USHA
|
NPN, horizontal deflection transistor. For horizontal deflection output stages of TVs ahd CRTs. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. |
|
Original |
PDF
|
| BU406 |
|
Various Russian Datasheets
|
Transistor |
|
Original |
PDF
|
|
|
| BU406 |
|
Wing Shing Computer Components
|
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
|
Original |
PDF
|
| BU406 |
|
Boca Semiconductor
|
NPN POWER TRANSISTOR |
|
Scan |
PDF
|
| BU406 |
|
Central Semiconductor
|
NPN Silicon Power Transistor, TO-220 |
|
Scan |
PDF
|
| BU406 |
|
Central Semiconductor
|
Power Transistors |
|
Scan |
PDF
|
| BU406 |
|
Continental Device India
|
Semiconductor Device Data Book 1996 |
|
Scan |
PDF
|
| BU406 |
|
Crimson Semiconductor
|
EPITAXIAL BASE / PLANAR Transistors |
|
Scan |
PDF
|
