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in6263

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Abstract: IN6263 SAMALL SIGNAL SCHOTTKY DIODES DO-35 FEATURES For general purpose applications 1.083MIN. junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and 0.02(0.52) MAX DIA 0.15MAX. 1.083MIN. designation LL6263,in the Micro-MELF case with type designation MCL6263 0.079(2.0) MAX DIA MECHANICAL DATA , AND CHARACTERISTICS CURVES IN6263 Fig.1 Typical variation of forward. Current vs forward.voltage -
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Abstract: BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODES IN6263 VOLTAGE RANGE: 60 V CURRENT: 400 mW FEATURES DO - 35(GLASS) For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low , IN6263 FIG.2 - TYPICAL FORWARD CONDUCTION CURVE OF XXXXX COMBINATION SCHOTTKY BARRIER AND PN XXXXX BL Galaxy Electrical
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DO--35
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 -
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OPA660 coil gold detector circuit diagram transconductance amplifier spice R2M diode ota ic OPA660AU 850MH 351MH 374MH 435MH 460MH
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 Burr-Brown
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AGC OPA660 spice model 1n4148 DMF3068A 1n4148 spice model OPA1013 2gm transistor 400MH 443MH 1N4007
Abstract: ?^ OPA66O i B B i Vq INT +Vo -o â'"o 3 vW- 10Q - IN6263 = = i5 n F 220Q â  V W -L +5V IN6263 +5V 2200 i8on ~vWâ'" [ V, 1M F 100« -W A ¿ H Iâ -
OCR Scan
ZZ182
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 Burr-Brown
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2N2907 sbos007 REF200 RE100 R2M 45 OPA660AP
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 Burr-Brown
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bridge rectifier 1N4007 bl Common collector configuration basic 1N4007 spice
Abstract: IN6263 220 2 +5V 8 VI 1uF 100 7 5 +1 4 20k 6 1 180 IN6263 220 100 +5V 180 7 5 +1 4 6 Burr-Brown
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Abstract: + AD526 2kâ' POT. G 10␮F + 5kâ' + 5kâ' 5.6kâ' IN6263 RIN 50â' 5pF â'" AD3554 5kâ' IN6263 10␮F + 10␮F + â'"15V +15V + 10␮F + 10␮F Analog Devices
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AD712 AD588 AD7628 74ALS ADG221 C1103
Abstract: IN6263 220 2 +5V 8 VI 1uF 100 7 5 +1 4 20k 6 1 180 IN6263 220 100 +5V 180 7 5 +1 4 6 Burr-Brown
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SBOA047 ACF2101 equivalent opa660 spice SBOA049 SBOA093A SBOA092A SBOA074 SBOA056
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 Burr-Brown
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0525P CCII APPLICATION ccii
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 Burr-Brown
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1N4007 BL 2N2907 spice 351MHz
Abstract: RIN 1 2 4 8 16 10F + AD526 2k POT. G 10F + 5k + 5k 5.6k IN6263 RIN 50 5pF ­ AD3554 5k IN6263 10F + 10F + ­15V +15V + 10F + 10F + Analog Devices
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Data Dynamics 5109 AD574 application note 50k trimpot vertical test ad574 AD574 rev A N-16
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 Burr-Brown
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Abstract: converter DAC08 Series SETTLING TIME AND PROPAGATION DELAY NOTES: D1 â  Â°2 = IN6263 or equivalent D3 = -
OCR Scan
DAC08 philips DAC08AF DAC08CF DAC08CN DAC08F DC PM Motor Servo Amplifier DAC-08
Abstract: C2 R3 = 500 C4 VS ­ = ­15V NOTES: D1, D2 = IN6263 or equivalent D3 = IN914 or Philips Semiconductors
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pin configuration of DAC-08 dac08 equivalent DAC08ED DAC08HN DAC08EN DAC08EF NE531
Abstract: : VS - = -15V D1, D2 = IN6263 or equivalent D3 = IN914 or equivalent C1 = 0.01mF C2, C3 = 0.1mF Q1 ON Semiconductor
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1000w audio amp circuit diagram DAC-08 single power DAC-08 equivalent 1000w power amplifier circuit diagram 500W TRANSISTOR AUDIO AMPLIFIER 500w amplifier circuit diagram SOIC-16 PDIP-16 DAC-08/D
Abstract: VOUT D1 D2 C4 R3 = 500 NOTES: VS - = -15V D1, D2 = IN6263 or equivalent D3 = IN914 or equivalent ON Semiconductor
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marking v14 DAC-08ED DAC-08EDR2 DAC-08CN DAC-08EN DAC-08HN BRD8011/D
Abstract: NOTES: D1, D2 = IN6263 or equivalent D3 = IN914 or equivalent C1 = 0.01uF C2, C3 = 0.1uF Q1 = 2N3904 C4 Philips Semiconductors
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NE5534 signetics 2N3904 SIGNETICS dac08 Signetics ne5534 cross smd transistor marking B5 SMD TRANSISTOR MARKING B8 DACDAC-08CN DAC-08ED-T DACDAC-08HN
Abstract: : VS - = -15V D1, D2 = IN6263 or equivalent D3 = IN914 or equivalent C1 = 0.01uF C2, C3 = 0.1uF Q1 ON Semiconductor
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NE5534 NE531 equivalent VR15
Abstract: ?^ OPA66O i B B i Vq INT +Vo -o â'"o 3 vW- 10Q - IN6263 = = i5 n F 220Q â  V W -L +5V IN6263 +5V 2200 i8on ~vWâ'" [ V, 1M F 100« -W A ¿ H Iâ SAIA-Burgess
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IP6K7 V4LT7 v4lsa1 V4LS V4LST7 Burgess
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 -
OCR Scan
BAT19 transistor ESM 30 in 6263 CB-124 CB-102
Abstract: 290 VO INT 8 3 OTA 10 IN6263 +5V IN6263 +5V 220 180 8 VI 7 7 -
OCR Scan
CB-26 1N3595DHD IN5711 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN5818 in3595 IN270 CB-101
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