NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: tested in specific frequency windows. IMPATT diode products for millimeter-wave applications are , enables the user to verify ELVA-1 test data. CW IMPATT Diode Specifications Model Test Circuit , : korneev@exch.nnz.spb.su INTERNET http://www.elva-1.spb.ru/ Pulsed IMPATT Diode Specifications IM-10PK/ IM-10PK/ IM-20PK IM-20PK , coaxialwaveguide transition. IMPATT Diode (1) is installed into the coaxial line that crosses a waveguide cavity. , available as examples of IMPATT diode application: 1. Cavity Stabilized IMPATT diode Oscillators CIDO ... | Original |
2 pages, |
WR6 DIODE IC-02U IM-02PD IM-10PK IM-10PV IM-20PK IM-20PV IC-02K IC-015W impatt diode W band ELVA-1 impatt impatt diode datasheet impatt diode operation impatt diode datasheet abstract |
|
|||
| Abstract: request. 2. The mount for an IMPATT diode must provide an adequate heat flow path away from the diode , APC N OR APC 7 CONNECTOR MOUNT IMPATT .- DIODE Figure 15. Simplified Drawing of Coaxial Cavity. , use of fixed tuned cavities is not recommended for IMPATT Diodes. Minor variations of diode impedance among production units require some tuning capability. IMPATT DIODE ' m Hi1 À^ù^r TT 1 m - RF , HEWLETTPACKARD COMPONENTS HIGH POWER, HIGH EFFICIENCY SILICON DOUBLE DRIFT IMPATT DIODES FOR CW ... | OCR Scan |
5 pages, |
hp 0611 diode GG 14 impatt CW doppler radar radar impatt impatt diode operation impatt diode datasheet abstract |
|
|||
| Abstract: are available upon special request. 2. The mount for an IMPATT diode must provide an adequate heat , COAX APCN OR APC 7 CONNECTOR MOUNT '_AW HP d A'.V IMPATT DIODE Figure 9. Simplified Drawing of , HEWLETT^ PACKARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR 5082-0607 CW POWER SOURCES , Designed to Exceed the Requirements of MIL-S-19500 MIL-S-19500 Description /Applications Double drift silicon IMPATT , resistance at microwave frequencies. Double drift IMPATT diodes offer advantages of higher power and ... | OCR Scan |
4 pages, |
impatt diode operation cw doppler AN-968 radar impatt CW doppler radar Z 0607 apc-7 connector impatt diode datasheet abstract |
|
|||
| Abstract: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 T-o7if SILICON CW IMPATT DIODE ND8 SERIES , 1T DESCRIPTION AND APPLICATIONS The NEC CW IMPATT diode series includes a broad spectrum of diodes , region. The single drift region (SDR) IMPATT diode Is a flat profile P+NN+ epitaxial mesa with an integral heat sink, and the double drift region (DDR) diode is a flat profile P+PNN+ integral heat sink epitaxial mesa structure. Applications are IMPATT amplifiers and oscillators for industrial, space, and ... | OCR Scan |
9 pages, |
1ST15 1ST12 ND487R2-3R ND8011-5G SH 2104 radar impatt ND8T11W-5H ND8S08-5H ND8R11-5H ND8P08-5G ND8U08W-5H ND8L60W1T ND487 1ST20 datasheet abstract |
|
|||
| Abstract: Voltage Controlled Oscillators Selection Guide VTO Series Description In a varactor-tuned oscillator, a varactor diode serves as a voltagevariable capacitor in a tuned circuit to control the frequency of a negative resistance oscillator. The active device can be a Gunn or Impatt diode or a transistor with appropriate biasing and feedback circuitry. More specifically, the HP series oscillators , across the varactor diode, which is primarily controlled by the driver impedance and the bypass ... | Original |
2 pages, |
VTO-8580 impatt transistor FLO 14 VTO-8060 VTO-8080 VTO-8150 VTO-8200 VTO-8360 VTO-8090 VTO-8240 VTO-8430 HP RF TRANSISTOR GUIDE Gunn Diode VTO-8000 datasheet abstract |
|
|||
| Abstract: and output of a reflection amplifier, such as parametric amplifiers; tunnel, Gunn or Impatt diode , CARRIER A.F. MBK627 MBK627 Fig.13 Phase modulation with a variable capacitance diode as a variable ... | Original |
9 pages, |
radar gunn diode radar impatt PC06 sC4633 radar distance Circulators and isolators circulator philips 2722 gunn effect modern and radar transmitters gunn diode generator GUNN DIODE impatt diode datasheet oscillator tunnel diode datasheet abstract |
|
|||
| Abstract: HEWLETT^ PACKARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR PULSED POWER SOURCES , /Applications Silicon double drift IMPATT (IMPact Ionization Avalanche Transit Time) diodes are junction , man-pack radar, and active phased array radar. For more information, see AN961 AN961, Silicon Double-Drift IMPATT , Hewlett-Packard's IMPATT diodes are available in a variety of packages. Special package configuration is available , measured with the diode mounted in a copper heatsink using the dc avalanche resistance method (see HP ... | OCR Scan |
4 pages, |
AN961 5082-0710 impatt diode datasheet abstract |
|
|||
| Abstract: Microwave semiconductor diodes and components Microwave silicon LID-diodes 1) Type Fig. V(BR) cj at UR = 6 V ccase 't ÄthJC Notes V PF PF ns K/W BAV98 BAV98 39 18 0,3.0,6 0,14 - 300 Mixer varactor diode BXY49/A BXY49/A 39 36 1,7.2,1 0,1 0,2 180 BXY49/B BXY49/B 39 36 0,4-0,8 0,1 0,2 280 Step recovery diode BXY49/C BXY49/C 39 36 0,4.0,6 0,1 0,2 280 Remarks: ') Diodes with other capacities on request , /f V Pz max Nr. GHz GHz % % mW TFV 27/6 41 0,22 6 5 4 100 TFV 25/11 42 0,453 11,344 1 1 7 Impatt ... | OCR Scan |
1 pages, |
impatt BAW 43 barrier varactor "Step Recovery Diode" step recovery diode BAW69 BAV98 impatt diode BAW70 BXY49/A BXY49/B BXY49/C BAV98 abstract |
|
|||
| Abstract: r^ 0 7 - /( Series GALLIUM ARSENIDE PULSED IMPATT DIODES 8-15 GHz 15W, peak FEATURES • High peak output - 15 W at 9 GHz \ 14 W at 11 GHz 10 W at 14 GHz • High efficiency - typically 20% • Burnout resistant to circuit mismatches • High reliability • High duty cycle operation DESCRIPTION Varian 9251 diodes are hi-low profile, gallium-arsenide ( GaAs ) single drift pulsed IMPATT diodes. They , diode construction is. assured by using a grown hi-low doping profile with a high-temperature ... | OCR Scan |
2 pages, |
impatt impatt diode datasheet abstract |
|
|||
| Abstract: ) AEY17 AEY17 Germanium bonded backward diode for use at X band SOD-42 a 1 to 18 -53 120* 300 AEY29 AEY29 AEY29R AEY29R" Germanium bonded backward diode for use at J band DO-37 DO-37 j 12 to 18 -53 50t 300 AEY31 AEY31 AEY31A AEY31A Subminiature germanium bonded backward diode for use up to J band SOD-SO u 1 to 18 1 to 18 -53 -50 120« 60* 300 300 AEY32 AEY32 Subminiature germanium bonded backward diode for use up to Q band SOD-50 u 18 to 40 - 50 4000 , Gunn effect to produce c .w. oscillations in (1 band SOD-46 T 4.6 26 to 36 15 25 2.0 impatt diodes ... | OCR Scan |
1 pages, |
Germanium Power Diodes AEY29 AEY17 impatt SOD-31 CXY11a GUNN CXY21 Gunn Diode e band Gunn Diode AEY17 CXY11C gunn diode oscillator diode gunn SA Gunn Diode AEY17 abstract |
|
|||