NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IXYSPOWER Efficiency through Technology NE W PR O D UCT B R I E F 300V GenX3TM IGBTs Next Generation of High Speed C3 Class PT IGBTs JANUARY 2008 OVERVIEW IXYS has introduced a new family of high speed 300V Insulated Gate Bipolar Transistors ("IGBTs") called GenX3TM. These 300V GenX3 IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. Manufactured , 300V GenX3 IGBTs offer a cost-effective alternative to power MOSFETs for applications such as PFC ... | Original |
2 pages, |
TO247AD circuit power switching pc IGBTs Transistors IXGH100N30C3 IXGH120N30C3 TO-247ad 300v IGBT ac switch circuit IXGH60N30C3 solar inverters comparison Discrete IGBTS datasheet abstract |
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| Abstract: included · J1, J2; Open => used with external distributing gate board for paralleled IGBTs (CN2 and CN3 only). Closed => used with single IGBT or 2 paralleled IGBTs (CN2, CN3, CN4 and CN5) · * for low , / TDT2 to Vs TDT2 to GND SEL to GND external // IGBTs external // IGBTs error invertion shield , paralleled IGBTs) 3.100 ohms (6.100 ohms with paralleled IGBTs) 6.100 ohms 6.100 ohms 3.100 ohms (6.100 ohms with paralleled IGBTs) 3.100 ohms (6.100 ohms with paralleled IGBTs) 6.100 ... | Original |
3 pages, |
SKHI 25W semiconductor resistor 4k7 semikron SKHI igbt inverter schematics skpc semikron semikron SKHI 22A transistor BC 547B semikron SKpc 21/ 2 molex 41791 igbts resistor 4k7 semikron SKHI 21 DRIVER IGBT SEMIKRON SKPC datasheet abstract |
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| Abstract: paralleled IGBTs (CN2 and CN3 only). Closed => used with single IGBT or 2 paralleled IGBTs (CN2, CN3, CN4 e , TDT1 to GND Rtd / TDT2 to Vs TDT2 to GND SEL to GND external // IGBTs external // IGBTs error , (6.100 ohms with paralleled IGBTs) 3.100 ohms (6.100 ohms with paralleled IGBTs) 6.100 ohms 6.100 ohms 3.100 ohms (6.100 ohms with paralleled IGBTs) 3.100 ohms (6.100 ohms with paralleled IGBTs) 6.100 ohms 6.100 ohms 0 ohms (0,47 ohms with paralleled IGBTs) 0 ohms (0,47 ohms ... | Original |
3 pages, |
skpc 21 547B igbt inverter schematics resistor 2k2 25w inverter SKHI 22 semikron SKpc 22 resistor 4k7 molex 41791 SKHI 25W semikron SKHI 22 semikron SKHI 21 datasheet abstract |
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| Abstract: EFFICIENCY AND SHORT CIRCUIT CAPABILITY IN IGBTS By Rahul Chokhawala The switching devices are selected by , drop directly depends on the current-gain. High gain IGBTs have lower V„, . but shorter tsc. The lower CE(«0 gain IGBTs on the other hand boast of longer tK but only at the expense of the operating , is relaxed. The above trade-offs result in IGBTs with more relaxed tK constraint be able to handle , frequency for IGBTs with "low" and "high" short circuit times. The shape of the curves strictly depend on ... | OCR Scan |
2 pages, |
datasheet abstract |
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| Abstract: current between the devices results in different heating, and different power losses, for the IGBTs. When , Connecting IGBTs in Parallel (Fundamentals) 1 Introduction Apart from looking for an IGBT , currents, of connecting two or more smaller IGBTs in parallel. Noteworthy advantages of this are a more , parallel-connected IGBTs can be ignored, because in relation to the conducting state behavior many small sources of , Figure 1 shows the output characteristics for two PT IGBTs (BUP 402) with different collector-emitter ... | Original |
6 pages, |
IGBT power loss datasheet abstract |
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| Abstract: IGBTs. Der Kürze halber werden jeweils nur die IGBTs genannt. Auch die Bezeichnungen Kollektor und Emitter gelten für IGBTs. Für MOSFETs sind dafür Drain und Source zu lesen. A. Eigenschaften und , die Treiberendstufen für die 6 IGBTs. 6. Für die jeweils 2 IGBTs in einem Zweig ist eine , 25 . + 85 V~ Tstg Lagertemperatur 25 . + 85 Leistungstreiberplatine f. 6 IGBTs , 6-fach Treiber für DrehstromInverter · Treibt alle SEMIKRON IGBTs mit VCE bis 1200 V · Treibt MOSFETs ... | Original |
7 pages, |
stocko semikron SKHI 22 semikron SKHI semidriver eing igbts stocko mkf datasheet abstract |
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| Abstract: IGBTs. Der Kürze halber werden jeweils nur die IGBTs genannt. Auch die Bezeichnungen Kollektor und Emitter gelten für IGBTs. Für MOSFETs sind dafür Drain und Source zu lesen. A. Eigenschaften und , die Treiberendstufen für die 6 IGBTs. 6. Für die jeweils 2 IGBTs in einem Zweig ist eine , SKHI 60 Leistungstreiberplatine f. 6 IGBTs oder MOSFETs SKHI 60, SKHI 60 H4 A A mA V Ein- , Treiber für DrehstromInverter · Treibt alle SEMIKRON IGBTs mit VCE bis 1200 V · Treibt MOSFETs: VDS(on ... | Original |
7 pages, |
SKHI 22 B R semikron SKHI 22 semikron SKHI MKF 13272-6-0-1212 STOCKO igbts stocko mosfet triggering circuit for inverter eing stocko mkf datasheet abstract |
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| Abstract: , without sacrificing the inherently superior conduction characteristics of IGBTs. Thus, the WARP SpeedTM , fact, what IR has done with its WARP SpeedTM IGBTs. We have lowered Eoff losses to about half of the , , California 90245 Phone: 310-726-8622 Fax: 310-252-7167 WARP SpeedTM IGBTs - Fast Enough To Replace Power , Introduction: IGBTs have long held the promise of being able to more cost-effectively replace power MOSFETs , to deliver on that promise, due primarily to two reasons: 1) IGBTs were not quite fast enough to ... | Original |
6 pages, |
3 watt smps circuit 466W application IRFP450 dc to dc converter igbt for IR IGBT die ir igbt IRG4BC30W IRG4PC30W IRG4PC30U IRFP450 igbts IGBT gate drive for a boost converter welding rectifier circuit board datasheet abstract |
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| Abstract: CAPABILITY IN IGBTS By Rahul Chokhawala There also exists a device trade-off between currentgain and , is relaxed. The above trade-offs result in IGBTs with a more relaxed tsc constraint being able to , depends directly on the current-gain. High gain IGBTs have lower VCE(sat) but shorter tsc. The lower-gain IGBTs, on the other hand, have a longer tsc but only at the expense of the VCE(sat). The , fast-reacting protection circuits are now available2 to protect most efficient IGBTs, despite their reduced ... | Original |
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| Abstract: IGBTS By Rahul Chokhawala On-state voltage drop, V CE(sat) There is a fundamental device , on-state voltage drop depends directly on the current-gain. High gain IGBTs have lower VCE(sat) but shorter t sc. The lower-gain IGBTs, on the other hand, have a longer tsc but only at the expense of the , stored charge) The above trade-offs result in IGBTs with a more relaxed tsc constraint being able to , generalized trends in allowable load current against switching frequency for IGBTs with "low" and "high" ... | Original |
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| ST | Product Presentations | Transistors | IGBTs IGBTs technology is now being utilised in the design of cost competitive, high power IGBTs. In line with ST , the new IGBTs join the more traditional BJT and Power MOSFETs and the higly innovative . PowerMESH IGBTs PDF file (466K) Short www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/igbt/igbts-v1.htm |
STMicroelectronics | 30/11/2000 | 7.16 Kb | HTM | igbts-v1.htm |
| ST | Product Presentations | Transistors | IGBTs IGBTs IGBTs being utilised in the design of cost competitive, high power IGBTs. In line with ST's strategy to be a leader in Power, by offering a broad range of transistors in various technologies, the new IGBTs join the . PowerMESH IGBTs PDF file High Intensity Discharge Lamps www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/igbt/igbts.htm |
STMicroelectronics | 20/10/2000 | 5.62 Kb | HTM | igbts.htm |
| ST | Product Presentations | Transistors | IGBTs IGBTs technology is now being utilised in the design of cost competitive, high power IGBTs. In line with ST , the new IGBTs join the more traditional BJT and Power MOSFETs and the higly innovative . PowerMESH IGBTs PDF file (466K) Short www.datasheetarchive.com/files/stmicroelectronics/stonline/igbt/index-v1.htm |
STMicroelectronics | 08/02/2001 | 7.2 Kb | HTM | index-v1.htm |
| ST | Product Presentations | Transistors | IGBTs IGBTs IGBTs being utilised in the design of cost competitive, high power IGBTs. In line with ST's strategy to be a leader in Power, by offering a broad range of transistors in various technologies, the new IGBTs join the . PowerMESH IGBTs PDF file High Intensity Discharge Lamps www.datasheetarchive.com/files/stmicroelectronics/stonline/igbt/index.htm |
STMicroelectronics | 24/10/2000 | 5.7 Kb | HTM | index.htm |
| IGBT Ultrafast IGBT Solutions Harris Corporation's Home Page ¤ Semiconductor's Home Page ¤ Harris Semiconductor IGBT Home Page ¤ IGBT Ultrafast IGBT Solutions Ultrafast IGBT solutions for: Overview Ultrafast IGBT Solutions for: UFS: Ultrafast Switching IGBTs Harris C-Speed IGBTs C-Speed Product Listing Harris B-Speed IGBTs B-Speed Product Listing Harris Rugged IGBTs Harris IGBT Line Cards Harris IGBT 600 Volt Series - IGBT Harris IGBT 1200 Volt Series www.datasheetarchive.com/files/harris/igbt/index.htm |
Harris | 15/08/1997 | 3.05 Kb | HTM | index.htm |
| ST | IGBTs | PowerMESH IGBTs PowerMESH IGBTs IGBTs Datasheets Product Selector Application Notes Cross Reference PowerMESH IGBTs A NEW MILESTONE IN ST's TRANSISTOR PORTFOLIO Two distinct families of PowerMESH IGBTs have been www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/igbt/powmesh/powmesh.htm |
STMicroelectronics | 28/06/2000 | 5.82 Kb | HTM | powmesh.htm |
| ST | IGBTs | PowerMESH IGBTs Short Circuit Proof IGBTs PowerMESH IGBTs NEW 600V AND 1200V IGBT SERIES: SHORT CIRCUIT PROOF circuit protected IGBTs. These products find applications primarily in high frequency inverters for motor control and welding equipment. In such applications the IGBT operates in a bridge topology www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/igbt/powmesh/short.htm |
STMicroelectronics | 30/11/2000 | 8.23 Kb | HTM | short.htm |
| International Rectifier - General Product Information - IGBT International Rectifier, IGBT, Power Semiconductor, Bipolar, Transistor switch gen iv International Rectifier - General Product Information - IGBT Try these NEW product selection utilities from IR: IGBT Navigator Module Navigator IGBT - SIP & HEXPak Navigator New Products IR Expands Warp Speed TM IGBT Line with New www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd0002d.htm |
International Rectifier | 06/10/1998 | 11.95 Kb | HTM | wcd0002d.htm |
| ST | IGBTs | Packages and Ordering Information IGBTs IGBTs Datasheets Product Selector Application Notes Cross Reference Packages and Ordering Information ST's IGBTs are offered in a large variety of packages including the "FP" version, the fully isolated option of the TO-220 or the "D" version, where a built www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/igbt/packages/packages.htm |
STMicroelectronics | 28/06/2000 | 5.55 Kb | HTM | packages.htm |
| ST | IGBTs | PowerMESH IGBTs PowerMESH IGBTs PowerMESH Low Drop IGBTs drastically cut on losses in applications working from the mains low drop IGBTs . Low Drop Logic Level IGBTs First among silicon manufacturers ST has produced Logic Level www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/igbt/powmesh/powmesh2.htm |
STMicroelectronics | 28/06/2000 | 5.79 Kb | HTM | powmesh2.htm |