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igbt failure fit
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advantage and disadvantage of igbtAbstract: Calculation of major IGBT operating parameters of failure mechanisms and how the failure rate is determined. FAILURE MECHANISMS The IGBT module , . The unit of failure rate is FIT (1 FIT = 109 /h). There are several methods of evaluating the , to case. = failure rate (FIT) N = number of cycles to fail. = Chi square confidence value A = fitting parameter. B = fitting parameter. TD Fig. 6 IGBT gateoxide failure , AN 5945 IGBT Module Reliability Application Note AN59455 October 2010 LN27638 Authors 
Dynex Original 

advantage and disadvantage of igbt Calculation of major IGBT operating parameters failure analysis IGBT MTBF IGBT fit IEC607495 igbt failure fit 
MTBF IGBT fitAbstract: IEC60749 of failure mechanisms and how the failure rate is determined. FAILURE MECHANISMS The IGBT module , . The unit of failure rate is FIT (1 FIT = 109 /h). There are several methods of evaluating the , 2000 2002 2004 2006 2008 2010 DATE Fig. 6 IGBT gateoxide failure rate A N , AN 5945 IGBT Module Reliability Application Note AN59453 October 2009 LN26894 Authors , insulation and also overfill of epoxy resin to provide rigidity. IGBT & FRD Die Substrate Assembly 
Dynex Original 

IEC60749 MTBF IGBT module igbt failure IEC60068214 vibration ge traction motor repair igbt qualification circuit 
1287standardAbstract: SiC IGBT High Power Modules in the traction relevant IGBT voltage classes 1700 / 2500 / 3300 V. The criteria for failure was an , : > 1000 h application class: N resulted in a failure rate of below 500 FIT. So far eupec has , Apr 96 Jul 95 0 Okt 95 0 FIT rate (electr. device failure) 180 700 Jan 95 As , Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin , survey of the measures and the resulting improvements of IGBT module reliability reached by eupec 
Eupec Original 

1287standard SiC IGBT High Power Modules eupec igbt 3.3kv PCIM 96 HIGH VOLTAGE DIODE 3.3kv 
9544 transistorAbstract: TRANSISTOR 9642 a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES: IGBT / CoPack , NOTES a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES: IGBT , to understand the reliability of specific product like the IGBT it is useful to determine the failure , (t) Infant Failures Wearout Failures Log Failure Random Failures Log Time t IGBT , 6023 0 NOTES a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES 
International Rectifier Original 

9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud IRGPH60UD2 IRGBC20FD T0247 T0220 E65E72 IRG4BC20S IRG4BC30S IRG4BC40S 
infineon mtbfAbstract: MTBF IGBT APPLICATION NOTE Page 1 von 2 Definition of FIT and MTBF A failure rate =is defined by the , failure rates is 1 fit (failures in time) = 1*109h1, meaning one failure in 109 operation hours of the device. A component specified with 100 fit is therefore expected to operate 107 hours. Example , 7 h 1 4000 * 5000h 10 7 = 9 1 fit = 100 fit 10 h = or expressed in fit: The failure , the fit value, the operating conditions must be given. For eupec IGBT modules these conditions are 
Eupec Original 

infineon mtbf MTBF IGBT mtbf infineon 10000Fit igbt infineon igbt failure rate D59581 
TRANSISTOR 9642Abstract: T0247 package reliability of specific product like the IGBT it is useful to determine the failure rate associated with each , 1.61E+07 57 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 9 of 35 HIGH TEMPERATURE REVERSE , failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability , 3.73E+06 245 1.12E+07 82 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours 
International Rectifier Original 

IRG4BC30UD T0247 package what is fast IGBT transistor Equivalent transistors for IRG4PC50U IRGB440U IRGPC40U IRG4BC20FD 600V 16 TO220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U 
OF IGBTAbstract: IGBT Power Module siemens ag produced modules allow a general statement as follows: Failure in Time: 200 FIT @ T A = 40°C Due to the , Status Report for the Improvement Programme for Siemens IGBT Modules Contents: 1. Scope and , Temperature and Power Cycling tests 4. Figures on Lifetime and Failure Rate 5. Further goals / under internal discussion Attachments: · Quality Approval Test Specification · Quality Data of IGBT Modules , . Scope and Reliability requirements New technologies for IGBT modules provide the possibility to use 
Siemens Original 

OF IGBT IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 
eupec igbt 10kvAbstract: Inverter Delta Module require a failure rate for IGBT IHM / IHV Module modules in the range of 100 fit (1 1000 Medium Power IGBT Module fit corresponds to one failure in 9 10 hours of operation). To confirm this , well below 100 fit for the high power IGBT modules. References (1) T. Laska, L. Lorenz, A. Mauder , The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze , modern high voltage IGBT chip and packaging technology eupec is developing a product range of 6.5kV IGBT 
Eupec Original 

eupec igbt 10kv Inverter Delta 6.5kV IGBT igbt 3.3kv EUPEC Thyristor 1200A Thyratron dc to ac inverter 
igbt failure fitAbstract: (AOB10B60D). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.84 x 10 / [2x (6x77x500 , IGBT line of products offers bestinclass performance in conduction and switching losses, with robust , Standard submicron TM 600V Alpha IGBT with Diode TO263 Bare Cu Soft solder Al wire Epoxy resin with , . Reliability Evaluation FIT rate (per billion): 3.52 MTTF = 32413 years The presentation of FIT rate for the 
Alpha & Omega Semiconductor Original 


Abstract: 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOT15B60D, 600V, 15A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 154 Number of failure 0 1000 hrs 168 / 500 hrs 154 0 1000 hrs 616 
Alpha & Omega Semiconductor Original 


HTGBAbstract: 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOK10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 77 Number of failure 0 1000 hrs 168 / 500 hrs 77 0 1000 hrs 308  
Alpha & Omega Semiconductor Original 

HTGB 
Abstract: of the selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 , AOS Semiconductor Reliability Report AOT5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 
Alpha & Omega Semiconductor Original 


Abstract: Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N , AOS Semiconductor Reliability Report AOD5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 154 Number of failure 0 1000 hrs 168 / 500 hrs 154 0 1000 hrs 539 
Alpha & Omega Semiconductor Original 


Abstract: product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 8 MTTF = 10 / FIT = , AOS Semiconductor Reliability Report AOK15B60D, 600V, 15A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , device lifetime in field operation & long term device level reliability can be determined. FIT rate is 
Alpha & Omega Semiconductor Original 


Abstract: 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOT10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 77 Number of failure 0 1000 hrs 168 / 500 hrs 77 0 1000 hrs 308  
Alpha & Omega Semiconductor Original 


fairchild nomenclatureAbstract: calculation of IGBT snubber ) Curve fit vectors for switching loss function Eoff480(I,TJ). I IGBT collector current , Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN7520 Authors , determining IGBT losses. A math worksheet program such as MathCADTM may be used for this application. The algorithm flow chart is shown in Figure 1. The required IGBT parametric test data is obtained from basic , junction temperature. Eoff(V,I,TJ) Turnoff loss as a function of peak clamp voltage, IGBT collector 
Fairchild Semiconductor Original 

fairchild nomenclature calculation of IGBT snubber A150 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit 
calculation of IGBT snubberAbstract: IGBT JUNCTION TEMPERATURE CALCULATION Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN7520 Authors , describing a numerical algorithm for determining IGBT losses. A math worksheet program such as MathCADTM may be used for this application. The algorithm flow chart is shown in Figure 1. The required IGBT , of peak clamp voltage, IGBT collector current and junction temperature. fs IGBT switching frequency. ka(TJ), kb(TJ), kc(TJ), kd(TJ) Curve fit vectors for switching loss function Eoff480(I,TJ 
Fairchild Semiconductor Original 

IGBT JUNCTION TEMPERATURE CALCULATION AN75 igbt spice IGBT snubber VF25 VF150 
Abstract: designs by lowering switchvoltage dropout. An integrated insulated gate bipolar transistor (IGBT) driver , Information A. Description/Function: Xenon Photoflash Charger with IGBT Driver and Voltage Monitor B , test are shown in Table 1. Using these results, the Failure Rate ( ) is calculated as follows: = 1 , Temperature Acceleration factor assuming an activation energy of 0.8eV) 9 = 22.8 x 10 = 22.8 F.I.T. (60% confidence level @ 25Â°C) The following failure rate represents data collected from Maximâ's 
Maxim Integrated Products Original 

MAX8685AETD MAX8685 JESD22A114D C/150 
IXGP70N33Abstract: IXGQ90N33 /IGBT ISOPLUS discrete device *) Failure Rate [FIT] 125Â°C, 60% UCL Failure Rate [FIT] 90Â , FIT: 1 FIT = 1 failure / 109 hrs High Temperature Gate Bias (HTGB) TABLES 3: Failure Modes , discrete device *) Failure Rate [FIT] 125Â°C, 60% UCL Failure Rate [FIT] 90Â°C, 60% UCL Total Lots , QUALITY AND RELIABILITY Failure Modes: Degradation of electrical leakage characteristics due to , . Further information on reliability of power devices is provided on www.ixys.com. Power Cycle Failure 
IXYS Original 

IXGP70N33 IXGQ90N33 SK0604 SK0712 IXTP76N075 VBO19 D68623 CS4512 DSDI6014A DSI4516A DPG20C300PN DPG60C400QB 
FF900R12IP4LDAbstract: Infineon power diffusion process new era in IGBT internal packaging technologies. In order to address new application requirements, as well as to prepare for the next generation of IGBT chips, this set of technologies improves all interconnections within an IGBT module in regard to lifetime. I I I Chip front side: A Copper layer on , the solder joint. .XT technology HAS BEEN DEVELOPED to fit into most of our existing packages as , of Infineon Technologies, if a failure of such components can reasonably be expected to cause the 
Infineon Technologies Original 

FF900R12IP4LD Infineon power diffusion process Infineon diffusion solder copper bond wire infineon copper bond wire B133H9463XX7600 
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