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PMP3143 Texas Instruments Buck-Boost for IGBT Drivers -15V@500mA visit Texas Instruments
UC3727DWP Texas Instruments Isolated High Side IGBT Driver 28-SOIC 0 to 70 visit Texas Instruments
UC2727DWP Texas Instruments Isolated High Side IGBT Driver 28-SOIC -40 to 85 visit Texas Instruments
UC3727DWPTR Texas Instruments Isolated High Side IGBT Driver 28-SOIC 0 to 70 visit Texas Instruments
UC2727DWPTR Texas Instruments Isolated High Side IGBT Driver 28-SOIC -40 to 85 visit Texas Instruments
UC3727N Texas Instruments Isolated High Side IGBT Driver 20-PDIP 0 to 70 visit Texas Instruments

igbt failure fit

Catalog Datasheet MFG & Type PDF Document Tags

advantage and disadvantage of igbt

Abstract: Calculation of major IGBT operating parameters of failure mechanisms and how the failure rate is determined. FAILURE MECHANISMS The IGBT module , . The unit of failure rate is FIT (1 FIT = 10-9 /h). There are several methods of evaluating the , to case. = failure rate (FIT) N = number of cycles to fail. = Chi square confidence value A = fitting parameter. B = fitting parameter. TD Fig. 6 IGBT gate-oxide failure , AN 5945 IGBT Module Reliability Application Note AN5945-5 October 2010 LN27638 Authors
Dynex
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advantage and disadvantage of igbt Calculation of major IGBT operating parameters failure analysis IGBT MTBF IGBT fit IEC60749-5 IEC60749

MTBF IGBT fit

Abstract: IEC60749 of failure mechanisms and how the failure rate is determined. FAILURE MECHANISMS The IGBT module , . The unit of failure rate is FIT (1 FIT = 10-9 /h). There are several methods of evaluating the , 2000 2002 2004 2006 2008 2010 DATE Fig. 6 IGBT gate-oxide failure rate A N , AN 5945 IGBT Module Reliability Application Note AN5945-3 October 2009 LN26894 Authors , insulation and also overfill of epoxy resin to provide rigidity. IGBT & FRD Die Substrate Assembly
Dynex
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MTBF IGBT module igbt failure IEC60068-2-14 vibration ge traction motor repair igbt qualification circuit igbt testing procedure

1287-standard

Abstract: SiC IGBT High Power Modules in the traction relevant IGBT voltage classes 1700 / 2500 / 3300 V. The criteria for failure was an , : > 1000 h application class: N resulted in a failure rate of below 500 FIT. So far eupec has , Apr 96 Jul 95 0 Okt 95 0 FIT rate (electr. device failure) 180 700 Jan 95 As , Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin , survey of the measures and the resulting improvements of IGBT module reliability reached by eupec
Eupec
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1287-standard SiC IGBT High Power Modules eupec igbt 3.3kv PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv

9544 transistor

Abstract: TRANSISTOR 9642 a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES: IGBT / CoPack , NOTES a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES: IGBT , to understand the reliability of specific product like the IGBT it is useful to determine the failure , (t) Infant Failures Wearout Failures Log Failure Random Failures Log Time t IGBT , 6023 0 NOTES a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES
International Rectifier
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9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud IRGPH60UD2 IRGBC20FD T0247 T0220 E-65-E-72 IRG4BC20S IRG4BC30S IRG4BC40S

infineon mtbf

Abstract: MTBF IGBT APPLICATION NOTE Page 1 von 2 Definition of FIT and MTBF A failure rate =is defined by the , failure rates is 1 fit (failures in time) = 1*10-9h-1, meaning one failure in 109 operation hours of the device. A component specified with 100 fit is therefore expected to operate 107 hours. Example , -7 h -1 4000 * 5000h 10 -7 = -9 -1 fit = 100 fit 10 h = or expressed in fit: The failure , the fit value, the operating conditions must be given. For eupec IGBT modules these conditions are
Eupec
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infineon mtbf MTBF IGBT mtbf infineon 10000Fit igbt infineon igbt failure rate D-59581

TRANSISTOR 9642

Abstract: T0247 package reliability of specific product like the IGBT it is useful to determine the failure rate associated with each , 1.61E+07 57 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 9 of 35 HIGH TEMPERATURE REVERSE , failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability , 3.73E+06 245 1.12E+07 82 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours
International Rectifier
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IRG4BC30UD T0247 package what is fast IGBT transistor Equivalent transistors for IRG4PC50U IRGB440U IRGPC40U IRG4BC20FD 600V 16 TO220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U

OF IGBT

Abstract: IGBT Power Module siemens ag produced modules allow a general statement as follows: Failure in Time: 200 FIT @ T A = 40°C Due to the , Status Report for the Improvement Programme for Siemens IGBT Modules Contents: 1. Scope and , Temperature and Power Cycling tests 4. Figures on Lifetime and Failure Rate 5. Further goals / under internal discussion Attachments: · Quality Approval Test Specification · Quality Data of IGBT Modules , . Scope and Reliability requirements New technologies for IGBT modules provide the possibility to use
Siemens
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OF IGBT IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300

eupec igbt 10kv

Abstract: Inverter Delta Module require a failure rate for IGBT IHM / IHV Module modules in the range of 100 fit (1 1000 Medium Power IGBT Module fit corresponds to one failure in 9 10 hours of operation). To confirm this , well below 100 fit for the high power IGBT modules. References (1) T. Laska, L. Lorenz, A. Mauder , The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze , modern high voltage IGBT chip and packaging technology eupec is developing a product range of 6.5kV IGBT
Eupec
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eupec igbt 10kv Inverter Delta 6.5kV IGBT igbt 3.3kv EUPEC Thyristor 1200A Thyratron dc to ac inverter

igbt failure fit

Abstract: (AOB10B60D). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.84 x 10 / [2x (6x77x500 , IGBT line of products offers best-in-class performance in conduction and switching losses, with robust , Standard sub-micron TM 600V Alpha IGBT with Diode TO263 Bare Cu Soft solder Al wire Epoxy resin with , . Reliability Evaluation FIT rate (per billion): 3.52 MTTF = 32413 years The presentation of FIT rate for the
Alpha & Omega Semiconductor
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Abstract: 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOT15B60D, 600V, 15A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 154 Number of failure 0 1000 hrs 168 / 500 hrs 154 0 1000 hrs 616 Alpha & Omega Semiconductor
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HTGB

Abstract: 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOK10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 77 Number of failure 0 1000 hrs 168 / 500 hrs 77 0 1000 hrs 308 -
Alpha & Omega Semiconductor
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HTGB
Abstract: of the selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 , AOS Semiconductor Reliability Report AOT5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 Alpha & Omega Semiconductor
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Abstract: Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N , AOS Semiconductor Reliability Report AOD5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 154 Number of failure 0 1000 hrs 168 / 500 hrs 154 0 1000 hrs 539 Alpha & Omega Semiconductor
Original
Abstract: product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 8 MTTF = 10 / FIT = , AOS Semiconductor Reliability Report AOK15B60D, 600V, 15A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , device lifetime in field operation & long term device level reliability can be determined. FIT rate is Alpha & Omega Semiconductor
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Abstract: 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOT10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 77 Number of failure 0 1000 hrs 168 / 500 hrs 77 0 1000 hrs 308 - Alpha & Omega Semiconductor
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fairchild nomenclature

Abstract: calculation of IGBT snubber ) Curve fit vectors for switching loss function Eoff480(I,TJ). I IGBT collector current , Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN-7520 Authors , determining IGBT losses. A math worksheet program such as MathCADTM may be used for this application. The algorithm flow chart is shown in Figure 1. The required IGBT parametric test data is obtained from basic , junction temperature. Eoff(V,I,TJ) Turn-off loss as a function of peak clamp voltage, IGBT collector
Fairchild Semiconductor
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fairchild nomenclature calculation of IGBT snubber A150 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit

calculation of IGBT snubber

Abstract: IGBT JUNCTION TEMPERATURE CALCULATION Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN-7520 Authors , describing a numerical algorithm for determining IGBT losses. A math worksheet program such as MathCADTM may be used for this application. The algorithm flow chart is shown in Figure 1. The required IGBT , of peak clamp voltage, IGBT collector current and junction temperature. fs IGBT switching frequency. ka(TJ), kb(TJ), kc(TJ), kd(TJ) Curve fit vectors for switching loss function Eoff480(I,TJ
Fairchild Semiconductor
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IGBT JUNCTION TEMPERATURE CALCULATION AN75 igbt spice IGBT snubber VF25 VF150
Abstract: designs by lowering switch-voltage dropout. An integrated insulated gate bipolar transistor (IGBT) driver , Information A. Description/Function: Xenon Photoflash Charger with IGBT Driver and Voltage Monitor B , test are shown in Table 1. Using these results, the Failure Rate ( ) is calculated as follows: = 1 , Temperature Acceleration factor assuming an activation energy of 0.8eV) -9 = 22.8 x 10 = 22.8 F.I.T. (60% confidence level @ 25°C) The following failure rate represents data collected from Maximâ'™s Maxim Integrated Products
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MAX8685AETD MAX8685 JESD22-A114-D C/150

IXGP70N33

Abstract: IXGQ90N33 /IGBT ISOPLUS discrete device *) Failure Rate [FIT] 125°C, 60% UCL Failure Rate [FIT] 90 , FIT: 1 FIT = 1 failure / 109 hrs High Temperature Gate Bias (HTGB) TABLES 3: Failure Modes , discrete device *) Failure Rate [FIT] 125°C, 60% UCL Failure Rate [FIT] 90°C, 60% UCL Total Lots , QUALITY AND RELIABILITY Failure Modes: Degradation of electrical leakage characteristics due to , . Further information on reliability of power devices is provided on www.ixys.com. Power Cycle Failure
IXYS
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IXGP70N33 IXGQ90N33 SK0604 SK0712 IXTP76N075 VBO19 D-68623 CS45-12 DSDI60-14A DSI45-16A DPG20C300PN DPG60C400QB

FF900R12IP4LD

Abstract: Infineon power diffusion process new era in IGBT internal packaging technologies. In order to address new application requirements, as well as to prepare for the next generation of IGBT chips, this set of technologies improves all interconnections within an IGBT module in regard to lifetime. I I I Chip front side: A Copper layer on , the solder joint. .XT technology HAS BEEN DEVELOPED to fit into most of our existing packages as , of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
Infineon Technologies
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FF900R12IP4LD Infineon power diffusion process Infineon diffusion solder copper bond wire infineon copper bond wire B133-H9463-X-X-7600
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