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ISL95210IRZ-T7A Intersil Corporation High Efficiency 5V, 10A Buck Regulator; QFN32; Temp Range: See Datasheet visit Intersil Buy
ISL95210HRZ-T Intersil Corporation High Efficiency 5V, 10A Buck Regulator; QFN32; Temp Range: See Datasheet visit Intersil Buy
ISL95210IRZ Intersil Corporation High Efficiency 5V, 10A Buck Regulator; QFN32; Temp Range: See Datasheet visit Intersil Buy
ISL95210HRZ Intersil Corporation High Efficiency 5V, 10A Buck Regulator; QFN32; Temp Range: See Datasheet visit Intersil Buy
ISL95210HRZ-T7A Intersil Corporation High Efficiency 5V, 10A Buck Regulator; QFN32; Temp Range: See Datasheet visit Intersil Buy
ISL95210IRZ-T Intersil Corporation High Efficiency 5V, 10A Buck Regulator; QFN32; Temp Range: See Datasheet visit Intersil Buy

igbt 300V 10A datasheet

Catalog Datasheet MFG & Type PDF Document Tags

SGL10N60RUFD

Abstract: delay time VCC = 300V , IC = 10A - 10 - nS tr Turn on rise time VGE = 15V - , Case-to-Sink - 0.2 - °C/W CO-PAK IGBT SGL10N60RUFD 16 60 Vcc = 300V Load Current , Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 , SGL10N60RUFD 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20 Vge = 15V Esw Ic =20A 0.8 600 , CO-PAK IGBT SGL10N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High
Fairchild Semiconductor
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SME6G10US60 IGBT

Abstract: igbt 300V 10A datasheet VCC = 300V , IC = 10A - 10 - ns tr Turn on rise time VGE = 15V - 17 - , COMPACT IGBT MODULE 16 60 Vcc = 300V Load Current : peak of square wave 50 Tc = 25 12 , , Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 Cies VGE [V , MODULE 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20 Vge = 15V Esw Ic =20A 0.8 , Preliminary SME6G10US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low
Fairchild Semiconductor
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SME6G10US60 IGBT igbt 300V 10A datasheet 17-PM-BA

200v dc motor igbt

Abstract: SGS10N60RUFD Emitter Voltage 40 CO-PAK IGBT SGS10N60RUFD 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg , delay time VCC = 300V , IC = 10A - 15 - ns tr Turn on rise time VGE = 15V - , IGBT SGS10N60RUFD 16 60 Vcc = 300V Load Current : peak of square wave 50 Tc = 25 12 , = 300V Ic = 10A 16 1000 800 12 Cies VGE [V] Capacitance [pF] 14 600 400 , CO-PAK IGBT SGS10N60RUFD FEATURES TO-220F * Short Circuit rated 10µs @TC=100°C * High
Fairchild Semiconductor
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200v dc motor igbt

SGP10N60RUF

Abstract: IGBT SGP10N60RUF 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20 Vge = 15V Esw Ic , - 22 - pF td(on) Turn on delay time VCC = 300V , IC = 10A - 10 - ns , Case-to-Sink - 0.5 - °C/W N-CHANNEL IGBT SGP10N60RUF 16 60 Vcc = 300V Load Current , Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 , SGP10N60RUF FEATURES N-CHANNEL IGBT TO-220 * Short Circuit rated 10µs @TC=100°C * High
Fairchild Semiconductor
Original

SGH10N60RUFD

Abstract: delay time VCC = 300V , IC = 10A - 10 - ns tr Turn on rise time VGE = 15V - , Case-to-Sink - 0.24 - °C/W CO-PAK IGBT SGH10N60RUFD 16 60 Vcc = 300V Load Current , Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 , SGH10N60RUFD 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20 Vge = 15V Esw Ic =20A 0.8 600 , CO-PAK IGBT SGH10N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High
Fairchild Semiconductor
Original
Abstract: FGA180N30D 300V PDP IGBT June 2006 FGA180N30D 300V PDP IGBT Features · High Current , 1 www.fairchildsemi.com FGA180N30D Rev. B FGA180N30D 300V PDP IGBT Package Marking and , mJ mJ mJ nC nC nC 2 FGA180N30D Rev. B www.fairchildsemi.com FGA180N30D 300V PDP IGBT , www.fairchildsemi.com FGA180N30D 300V PDP IGBT Typical Performance CharacteristicsTypical Saturation , V o ltag e , V G E [V ] 4 FGA180N30D Rev. B www.fairchildsemi.com FGA180N30D 300V PDP IGBT Fairchild Semiconductor
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FGA180N30DTU

igbt 300V 30A

Abstract: igbt 300V 10A datasheet FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description · High current , 1 www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT September 2007 Device , FGPF30N30TD Rev. A www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Package Marking and , www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Electrical Characteristics of DIODE TC = 25°C unless , ] 15 www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Typical Performance
Fairchild Semiconductor
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igbt 300V 30A igbt 200v 20a

igbt 300V 10A datasheet

Abstract: igbt 200v 20a FGPF30N30D 300V, 30A PDP IGBT Features General Description · High Current Capability , FGPF30N30D Rev. A 1 www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT April 2007 Device , www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Package Marking and Ordering Information Symbol , IGBT Electrical Characteristics of DIODE TC = 25°C unless otherwise noted FGPF30N30D 300V, 30A , = 125 C 16 FGPF30N30D 300V, 30A PDP IGBT Typical Performance Characteristics td(on
Fairchild Semiconductor
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RG601 FGFP30N30DTU igbt 200v 30a

c3228

Abstract: igbt 300V 10A datasheet FGA180N30D 300V PDP IGBT Features Description · High Current Capability Employing , FGA180N30D 300V PDP IGBT June 2006 Device Marking Device FGA180N30D Package FGA180N30D , FGA180N30D 300V PDP IGBT Package Marking and Ordering Information Symbol Parameter Test , TC = 25°C ns - nC www.fairchildsemi.com FGA180N30D 300V PDP IGBT Electrical , Temperature, T C [ C ] www.fairchildsemi.com FGA180N30D 300V PDP IGBT Typical Performance
Fairchild Semiconductor
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c3228

FGA120N30D

Abstract: FGA120N30D 300V PDP IGBT Features Description · High Current Capability Employing , www.fairchildsemi.com FGA120N30D 300V PDP IGBT June 2006 Device Marking Device Package Reel Size , °C FGA120N30D Rev. A - TC = 25°C ns - nC www.fairchildsemi.com FGA120N30D 300V PDP IGBT , E [ V ] o www.fairchildsemi.com FGA120N30D 300V PDP IGBT Typical Performance , G [ ] 5 FGA120N30D Rev. A 10 www.fairchildsemi.com FGA120N30D 300V PDP IGBT Typical
Fairchild Semiconductor
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IHCS22R60CE

Abstract: IGBT DRIVER SCHEMATIC 3 PHASE Diode recovery Energy Datasheet Iout = 15A, VDC=300V Tvj = 25°C Tvj = 150°C Eon Iout = 15A, VDC=300V Tvj = 25°C Tvj = 150°C Eoff Iout = 10A, VDC=300V Tvj = 25°C Tvj = 150°C Erec , ) Datasheet 50°C 75°C 100°C 125°C 5A 10A 15A 20A 25A 30A 35A 40A 12/16 TvJ, JUNCTION , or other persons may be endangered. Datasheet 2/16 Rev. 2.3, May 2009 CIPOSTM , .8 IGBT and Diode Section
Infineon Technologies
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IHCS22R60CE IGBT DRIVER SCHEMATIC 3 PHASE

igbt 300v data sheet

Abstract: igbt 300V 10A datasheet FGA120N30D 300V PDP IGBT Features Description · High Current Capability Employing , www.fairchildsemi.com FGA120N30D 300V PDP IGBT June 2006 Device Marking Device Package Reel Size , FGA120N30D 300V PDP IGBT Package Marking and Ordering Information C Symbol = 25°C unless , FGA120N30D 300V PDP IGBT Electrical Characteristics of DIODE T Figure 1. Typical Output , m it t e r V o lt a g e , V G E [ V ] o www.fairchildsemi.com FGA120N30D 300V PDP IGBT
Fairchild Semiconductor
Original
igbt 300v data sheet

IGBT 40A

Abstract: igbt 300V 10A datasheet FGA180N30D 300V PDP IGBT Features Description · High Current Capability Employing , FGA180N30D 300V PDP IGBT June 2006 Device Marking Device Package Reel Size Tape Width , 300V PDP IGBT Package Marking and Ordering Information Symbol Parameter Test Conditions , 25°C ns - nC www.fairchildsemi.com FGA180N30D 300V PDP IGBT Electrical , Temperature, T C [ C ] www.fairchildsemi.com FGA180N30D 300V PDP IGBT Typical Performance
Fairchild Semiconductor
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IGBT 40A
Abstract: FGA180N30D 300V PDP IGBT Features Description â'¢ High Current Capability Employing , FGA180N30D Rev. B 1 www.fairchildsemi.com FGA180N30D 300V PDP IGBT June 2006 Device Marking , 2 FGA180N30D Rev. B www.fairchildsemi.com FGA180N30D 300V PDP IGBT Package Marking and , www.fairchildsemi.com FGA180N30D 300V PDP IGBT Electrical Characteristics of DIODE TC = 25°C unless otherwise , ] www.fairchildsemi.com FGA180N30D 300V PDP IGBT Typical Performance CharacteristicsTypical Saturation Fairchild Semiconductor
Original

IHCS22R60CE

Abstract: Input filter time EN IGBT Turn-on Energy Iout = 15A, VDC=300V Tvj = 25° C Tvj = 150° C Iout = 15A, VDC=300V Tvj = 25° C Tvj = 150° C Iout = 10A, VDC=300V Tvj = 25° C Tvj = 150° C Condition VLIN,HIN = 0V; Iout = , junction temperature (inductive load, VCE = 300V, IC = 15A Dynamic test circuit in Figure A) Datasheet , other persons may be endangered. Datasheet 2/16 Rev. 2.1, November 2008 CIPOSTM IHCS22R60CE , .8 IGBT and Diode Section
Infineon Technologies
Original

FGA70N30TD

Abstract: FGA70N30TD 300V, 70A PDP IGBT tm Features General Description · High current , Units V ns A nC www.fairchildsemi.com FGA70N30TD 300V, 70A PDP Trench IGBT Electrical , , VGE [V] 20 www.fairchildsemi.com FGA70N30TD 300V, 70A PDP Trench IGBT Typical Performance , FGA70N30TD 300V, 70A PDP Trench IGBT Typical Performance Characteristics (Continued) Figure 13 , [A/µ s] 7 FGA70N30TD Rev. A www.fairchildsemi.com FGA70N30TD 300V, 70A PDP Trench IGBT
Fairchild Semiconductor
Original

SME6G10US60

Abstract: Time Vcc = 300V , lc = 10A VG E = 15V Rg = 20Q Inductive Load - Vcc = 300V, VG E = 15V @ Tc = , 300V VGE= 15V lc = 10A - 44 10 15 66 15 22 nC nC nC Preliminary SME6G10US60 (Tc , V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS atTc=100°C COMPACT IGBT , Preliminary SME6G10US60 ELECTRICAL CHARACTERISTICS (IGBT PART) (Tc=25°C, Unless Otherwise Specified) S ym bol C h a r a c t e r is t ic s T e s t C o n d it io n s COMPACT IGBT MODULE M in Typ
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OCR Scan

SGP10N60

Abstract: voltage : VCE(sat) = 2.2 V @ IC = 10A High input impedance CO-PAK, IGBT with FRD : trr = 42ns (typ , = 300V, V GE = ± 15V IC = 10A T C = 25 T C = 125 -100 1200 Ton Capacitance [pF , GE = ± 15V IC = 10A TC = 25 TC = 125 - 1000 Toff Toff Tf Common Emitter VCC = 300V, VGE , Speed Switching Low Saturation Voltage : V CE(sat) = 2.1 V @ I C = 10A High Input Impedance CO-PAK, IGBT , SGP10N60RUFD IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD
Fairchild Semiconductor
Original
SGP10N60 SGP10N60RUFDTU AN-9017

0/PDP-2N-1000

Abstract: FGP90N30 300V, 90A PDP IGBT January 2006 FGP90N30 300V, 90A PDP IGBT Features · · · · High , 300V, 90A PDP IGBT Package Marking and Ordering Information Device Marking FGP90N30 Device , FGP90N30 300V, 90A PDP IGBT Typical Performance Characteristics Figure 1. Typical Output , [V ] FGP90N30 Rev. A 3 www.fairchildsemi.com FGP90N30 300V, 90A PDP IGBT Figure 7 , www.fairchildsemi.com FGP90N30 300V, 90A PDP IGBT Figure 13 Turn-On Characteristics vs. Collector Current 1000
Fairchild Semiconductor
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0/PDP-2N-1000 FGP90N30TU 90N30

igbt 300V 10A datasheet

Abstract: FGPF30N30TTU FGPF30N30T tm 300V, 30A PDP Trench IGBT Features General Description · High current capability Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum , FGPF30N30T Rev. A1 1 www.fairchildsemi.com FGPF30N30T 300V, 30A PDP Trench IGBT August 2007 , Gate-Emitter Voltage, VGE [V] 15 www.fairchildsemi.com FGPF30N30T 300V, 30A PDP Trench IGBT Typical , www.fairchildsemi.com FGPF30N30T 300V, 30A PDP Trench IGBT Typical Performance Characteristics FGPF30N30T 300V
Fairchild Semiconductor
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FGPF30N30TTU
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