NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
5962-8777801XA Texas Instruments TRANSISTOR 42 V, 3 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, HERMETIC SEALED, SIMILAR TO TO-5, 3 PIN, BIP General Purpose Power ri Buy
LM395T/NOPB Texas Instruments TRANSISTOR 36 V, 3 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, T03B, 3 PIN, BIP General Purpose Power ri BuyFREE Buy
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy

igbt 300V 10A datasheet

Catalog Datasheet Results Type PDF Document Tags
Abstract: 6MBI10F-060 6MBI10F-060 (10A) IGBT Module 600V / 10A 6 in one-package Outline Drawings Features , , IC=10mA VGE=15V, IC=10A VGE=0V VCE =10V f=1MHz VCC =300V IC=10A VGE=�V RG=220 ohm IF=10A, VGE=0V IF=IGBT Diode With Thermal compound Characteristics Min. Typ. � � � � � 0.06 Unit Max. 3.13 4.15 � 癈/W 癈/W 癈/W IGBT Module ... Original
datasheet

3 pages,
405.87 Kb

M604 AC Motor Servo Schematic 6MBI10F-060 6mbi 10A motor drive igbt 300V 10A 6MBI10F-060 abstract
datasheet frame
Abstract: 1MBC10-060 1MBC10-060,1MBC10D-060 1MBC10D-060, 1MBG10D-060 1MBG10D-060 Molded IGBT 600V / 10A Molded Package Features · , VGE=15V, IC=10A VGE=0V VCE=10V f=1MHz VCC=300V IC=10A VGE=±15V RG=220 ohm (Half Bridge) mA µA , , IC=10A VGE=0V V CE=10V f=1MHz VCC=300V, IC=10A VGE=±15V RG=220 ohm (Half Bridge) IF=10A, VGE=0V , 1MBC10-060 1MBC10-060,1MBC10D-060 1MBC10D-060,1MBG10D-060 1MBG10D-060 Switching time vs. RG Vcc=300V, Ic=10A, VGE=±15V, Tj=125°C , vs. RG Vcc=300V, Ic=10A, VGE=±15V, Tj=25°C 1000 100 1000 100 10 10 0 200 400 ... Original
datasheet

5 pages,
250.46 Kb

RG220 IC100 1MBG10D-060 1MBC10-060 1MBC10D-060 igbt 300V 10A 1MBC10-060 abstract
datasheet frame
Abstract: 1MBC10-060 1MBC10-060,1MBC10D-060 1MBC10D-060, 1MBG10D-060 1MBG10D-060 Molded IGBT 600V / 10A Molded Package Features · , VGE=15V, IC=10A VGE=0V VCE=10V f=1MHz VCC=300V IC=10A VGE=±15V RG=220 ohm (Half Bridge) mA µA , , IC=10A VGE=0V V CE=10V f=1MHz VCC=300V, IC=10A VGE=±15V RG=220 ohm (Half Bridge) IF=10A, VGE=0V , 1MBC10-060 1MBC10-060,1MBC10D-060 1MBC10D-060,1MBG10D-060 1MBG10D-060 Switching time vs. RG Vcc=300V, Ic=10A, VGE=±15V, Tj=125°C , vs. RG Vcc=300V, Ic=10A, VGE=±15V, Tj=25°C 1000 100 1000 100 10 10 0 200 400 ... Original
datasheet

5 pages,
250.04 Kb

RG220 igbt 300V 10A datasheet TO-110AB igbt 300V 30A igbt 300V 10A 1MBC10-060 1MBC10D-060 1MBG10D-060 1MBC10-060 abstract
datasheet frame
Abstract: 1MBC10-060 1MBC10-060,1MBC10D-060 1MBC10D-060, 1MBG10D-060 1MBG10D-060 Molded IGBT 600V / 10A Molded Package Features · , VGE=15V, IC=10A VGE=0V VCE=10V f=1MHz VCC=300V IC=10A VGE=±15V RG=220 ohm (Half Bridge) mA µA , , IC=10A VGE=0V V CE=10V f=1MHz VCC=300V, IC=10A VGE=±15V RG=220 ohm (Half Bridge) IF=10A, VGE=0V , 1MBC10-060 1MBC10-060,1MBC10D-060 1MBC10D-060,1MBG10D-060 1MBG10D-060 Switching time vs. RG Vcc=300V, Ic=10A, VGE=±15V, Tj=125°C , vs. RG Vcc=300V, Ic=10A, VGE=±15V, Tj=25°C 1000 100 1000 100 10 10 0 200 400 ... Original
datasheet

5 pages,
254.83 Kb

servo motors schematic resistance 220 ohm IC100 1MBG10D-060 1MBC10D-060 1MBC10-060 600v 30a IGBT igbt 300V 30A igbt 300V 10A datasheet 1MBC10-060 abstract
datasheet frame
Abstract: 1MBC10-060 1MBC10-060,1MBC10D-060 1MBC10D-060, 1MBG10D-060 1MBG10D-060 Molded IGBT 600V / 10A Molded Package Features · , VGE=15V, IC=10A VGE=0V VCE=10V f=1MHz VCC=300V IC=10A VGE=±15V RG=220 ohm (Half Bridge) mA µA , , IC=10A VGE=0V V CE=10V f=1MHz VCC=300V, IC=10A VGE=±15V RG=220 ohm (Half Bridge) IF=10A, VGE=0V , specified) 1MBC10-060 1MBC10-060 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation(IGBT) Operating temperature Storage temperature ... Original
datasheet

2 pages,
65.32 Kb

igbt 300V 10A IC100 220 package igbt 1MBG10D-060 1MBC10D-060 1MBC10-060 1MBC10-060 abstract
datasheet frame
Abstract: Copyrighted By Its Respective Manufacturer SGL10N60RUFD SGL10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - nS tr Turn on rise time VGE = 15V - 17 - nS , This Material Copyrighted By Its Respective Manufacturer SGL10N60RUFD SGL10N60RUFD CO-PAK IGBT Vcc = 300V Load , 12 ~ 10 > m CD Vcc = 300V le = 10A , SGL10N60RUFD SGL10N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10uS @Tc=100°C * High Speed Switching ... OCR Scan
datasheet

7 pages,
238.13 Kb

SGL10N60RUFD igbt 300V 10A 10n60rufd SGL10N60RUFD abstract
datasheet frame
Abstract: Copyrighted By Its Respective Manufacturer SGW10N60RUFD SGW10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , capacitance - 22 - pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - nS tr Turn on rise time VGE = , This Material Copyrighted By Its Respective Manufacturer SGW10N60RUFD SGW10N60RUFD CO-PAK IGBT Vcc = 300V Load , 12 ~ 10 > m CD Vcc = 300V le = 10A , SGW10N60RUFD SGW10N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10uS @Tc=100°C * High Speed Switching ... OCR Scan
datasheet

7 pages,
233.51 Kb

SGW10N60RUFD igbt 300V 10A 10N60RUFD 10N60RUFD abstract
datasheet frame
Abstract: Copyrighted By Its Respective Manufacturer SGP10N60RUFD SGP10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , * Low Saturation Voltage : VCE(sat) = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT with FRD , pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - ns tr Turn on rise time VGE = 15V - 17 - , Material Copyrighted By Its Respective Manufacturer SGP10N60RUFD SGP10N60RUFD CO-PAK IGBT Vcc = 300V Load Current , 12 ~ 10 > m CD Vcc = 300V le = 10A ... OCR Scan
datasheet

7 pages,
235.35 Kb

SGP10N60RUFD 35 khz ballast 18w SGP10N60RUFD abstract
datasheet frame
Abstract: Copyrighted By Its Respective Manufacturer SGS10N60RUFD SGS10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , * Low Saturation Voltage : VCE(sat) = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT with FRD , pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 15 - ns tr Turn on rise time VGE = 15V - 17 - , Respective Manufacturer SGS10N60RUFD SGS10N60RUFD CO-PAK IGBT Vcc = 300V Load Current : peak of square wave Duty , Vce [V] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage Vcc = 300V le = 10A ... OCR Scan
datasheet

7 pages,
234.31 Kb

igbt 300V 10A 35 khz ballast 18w SGS10N60RUFD SGS10N60RUFD abstract
datasheet frame
Abstract: Copyrighted By Its Respective Manufacturer SGH10N60RUFD SGH10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - ns tr Turn on rise time VGE = 15V - 17 - , Material Copyrighted By Its Respective Manufacturer SGH10N60RUFD SGH10N60RUFD CO-PAK IGBT Vcc = 300V Load Current , 12 ~ 10 > m CD Vcc = 300V le = 10A , SGH10N60RUFD SGH10N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10|as @TC=100°C * High Speed Switching ... OCR Scan
datasheet

7 pages,
236.88 Kb

SGH10N60RUFD igbt 300V 10A SGH10N60RUFD abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
developed and used to obtain graphs demonstrating the dependence of the power losses of the IGBT for the selection of IGBT devices for resonant applications, taking into consideration circuit IGBT DEVICES The current density of an IGBT is higher than that of a Power MOSFET with the same switching losses of the IGBT can be much higher due to the effect of the "tail current" (see reference [6]), which results from the delay in turn-off of the bipolar section of the IGBT caused by
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3716-v1.htm
STMicroelectronics 25/05/2000 18.99 Kb HTM 3716-v1.htm
three types of IGBT with equal die size dI/dt = 30A/ m s, V CC = 300V, T j = 125 o C 1 10000 demonstrating the dependence of the power losses of the IGBT on certain key parameters, the circuit application. This paper presents guidelines for the selection of IGBT devices for resonant applications applications. 3. IGBT DEVICES The current density of an IGBT is higher than that of a Power MOSFET with the applications the switching losses of the IGBT can be much higher due to the effect of the "tail current" (see
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3716.htm
STMicroelectronics 20/10/2000 19.81 Kb HTM 3716.htm
Small Signal IGBT Thyristors SCR: Silicon Controlled Rectifiers SCR Modules TRIACs 0.8A - 1A - 4A - 6A - 8A 10A - 12A - 16A Turboswitch Diodes 300V Turboswitch Diodes 600V Turboswitch Diodes
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/toc/ds/index-v1.htm
STMicroelectronics 08/02/2001 45.54 Kb HTM index-v1.htm
No abstract text available
www.datasheetarchive.com/download/59553498-689294ZC/asipm_apps.zip (ASIPM_Apps.pdf)
Powerex 31/01/2002 414.95 Kb ZIP asipm_apps.zip
846 Datasheets STD5NB30 STD5NB30 STD5NB30 STD5NB30 N-CHANNEL 300V - 0.75 OHM - 5A - DPAK POWERMESH MOSFET 7
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/614.htm
STMicroelectronics 31/03/1999 354.95 Kb HTM 614.htm
916 Datasheets STD5NB30 STD5NB30 STD5NB30 STD5NB30 N-CHANNEL 300V - 0.75 OHM - 5A - DPAK POWERMESH MOSFET 7
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/941.htm
STMicroelectronics 31/03/1999 344.43 Kb HTM 941.htm
846 Datasheets STD5NB30 STD5NB30 STD5NB30 STD5NB30 N-CHANNEL 300V - 0.75 OHM - 5A - DPAK POWERMESH MOSFET 7
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/616.htm
STMicroelectronics 31/03/1999 353.94 Kb HTM 616.htm
846 Datasheets STD5NB30 STD5NB30 STD5NB30 STD5NB30 N-CHANNEL 300V - 0.75 OHM - 5A - DPAK POWERMESH MOSFET 7
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/858.htm
STMicroelectronics 31/03/1999 351.96 Kb HTM 858.htm
846 Datasheets STD5NB30 STD5NB30 STD5NB30 STD5NB30 N-CHANNEL 300V - 0.75 OHM - 5A - DPAK POWERMESH MOSFET 7
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/619.htm
STMicroelectronics 31/03/1999 355.91 Kb HTM 619.htm
PART NUMBER STANDARD SEARCH RESULTS Relevance Index Part Number(s) Description Size (kb) 1000 Datasheets VN220 VN220 VN220 VN220 HIGH SIDE SMART POWER SOLID STATE RELAY 10 1000 Datasheets L6220 L6220 L6220 L6220 L6220N L6220N L6220N L6220N QUAD DARLINGTON SWITCHES 10 1000 Datasheets SM4T100A SM4T100A SM4T100A SM4T100A SM4T100CA SM4T100CA SM4T100CA SM4T100CA SM4T10A SM4T10A SM4T10A SM4T10A SM4T10CA SM4T10CA SM4T10CA SM4T10CA SM4T12A SM4T12A SM4T12A SM4T12A SM4T12CA SM4T12CA SM4T12CA SM4T12CA SM4T150 SM4T150 SM4T150 SM4T150 SM4T150A SM4T150A SM4T150A SM4T150A SM4T150C SM4T150C SM4T150C SM4T150C SM4T150CA SM4T150CA SM4T150CA SM4T150CA SM4T15A SM4T15A SM4T15A SM4T15A SM4T15CA SM4T15CA SM4T15CA SM4T15CA SM4T18A SM4T18A SM4T18A SM4T18A SM4T18CA SM4T18CA SM4T18CA SM4T18CA SM4T200 SM4T200 SM4T200 SM4T200 SM4T200A SM4T200A SM4T200A SM4T200A SM4T200C SM4T200C SM4T200C SM4T200C SM4T200CA SM4T200CA SM4T200CA SM4T200CA SM4T220 SM4T220 SM4T220 SM4T220 SM4T220A SM4T220A SM4T220A SM4T220A SM4T220C SM4T220C SM4T220C SM4T220C SM4T
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/613.htm
STMicroelectronics 31/03/1999 363.6 Kb HTM 613.htm