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Part Manufacturer Description Datasheet BUY
PMP3143 Texas Instruments Buck-Boost for IGBT Drivers -15V@500mA visit Texas Instruments
UC3727DWP Texas Instruments Isolated High Side IGBT Driver 28-SOIC 0 to 70 visit Texas Instruments
UC2727DWP Texas Instruments Isolated High Side IGBT Driver 28-SOIC -40 to 85 visit Texas Instruments
UC3727DWPTR Texas Instruments Isolated High Side IGBT Driver 28-SOIC 0 to 70 visit Texas Instruments
UC2727DWPTR Texas Instruments Isolated High Side IGBT Driver 28-SOIC -40 to 85 visit Texas Instruments

igbt 20A 1200v

Catalog Datasheet MFG & Type PDF Document Tags

FGA20N120FTD

Abstract: FGA20N120FTD tm 1200V, 20A Trench IGBT Features â'¢ Field stop trench technology â , 1 www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT December 2007 Device Marking , FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Package Marking and , A µC www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Electrical Characteristics , FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs
Fairchild Semiconductor
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FGA20N120

Abstract: FGA20N120FTDTU FGA20N120FTD tm 1200V, 20A Trench IGBT Features · Field stop trench technology General , www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT December 2007 Device Marking Device Package , www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Package Marking and Ordering Information Symbol , FGA20N120FTD 1200V, 20A Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output , ] 20 www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance
Fairchild Semiconductor
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FGA20N120 FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A 12v igbt 20a

fga20s120m

Abstract: 600v 20a IGBT FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description · High speed , www.fairchildsemi.com FGA20S120M 1200V, 20A ShortedAnodeTM IGBT April 2010 Device Marking Device Package , FGA20S120M 1200V, 20A ShortedAnodeTM IGBT Package Marking and Ordering Information Figure 1. Typical , Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA20S120M 1200V, 20A ShortedAnodeTM IGBT , www.fairchildsemi.com FGA20S120M 1200V, 20A ShortedAnodeTM IGBT Typical Performance Characteristics Figure 13
Fairchild Semiconductor
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DIODE GE 20a igbt 20A 1200v

IGBT 600V 200A

Abstract: igbt 20A 1200v > 1200V Tc=25 ºC Tc=125 ºC VGE=15V 100A 0 VCE(sat)=2.32V (@ I C , @ TC =125 ºC @TC =125ºC > 1200V/100A SW type GR Series (. , IGBT >>> 1200V/100A IGBT 70 -12% 60 Psw @Diode 50 Pon @Diode 40 -13% , -20%) 2) IGBTVCE(sat)typ2.2V (GS-0.5V) 1) IGBT (GS-15%) 1) FWD (GS-10%) 1) (GS2) No , nerati 4th Ge itachi H (Tc=125 ) (Tc=125) > 600V/200A type GR
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RT-MA-99-009 IGBT 600V 200A IGBT 200A 1200V igbt 600V igbt 300v igbt GS-25 GS-20

20A igbt

Abstract: igbt 1200V 20A 900V, VP = 1200V Rg = 5 , VGE = + 15V to 0 V TJ = 125°C VCC = 600V, Ic = 20A IGBT Rg = 5 , TJ = 125°C VCC = 600V, Ic = 20A IGBT Rg = 5 , Measured 5 mm from the package SCSOA Short Circuit Safe , leaded TO247 package. C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 3.07V VGE = 15V , 1200V, TJ = 125°C - V IC = 20A - IC = 20A, TJ = 125°C ±100 nA VGE = ±20V VGE(th) ICES V FM IGES , Features · Ultrafast npt IGBT Technology · 10 µs Short Circuit capability · Square RBSOA. · New Generation
International Rectifier
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20A igbt igbt 40a 600v IGBT 120A 1200V 600v 20a diode current diode diode 20khz IRGP20B120UD-E

igbt 400V 20A

Abstract: igbt 500V 15A . 3-20 3-24 3-28 20A, 1000V N-Channel IGBT. 34A, 1200V N-Channel IGBT , . 30A, 1200V N-Channel IGBT , Ultrafast Diode. 20A, 500V N-Channel IGBT with Anti-Parallel , I- MCT/IGBT/DIODES 3 PAGE 3-3 3-7 3-11 3-15 INSULATED GATE BIPOLAR
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igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v igbt 1000v 10A 20A 500v igbt HGTD6N40E1 HGTD6N50E1 HGTD10N40F1 HGTD10N50F1 HGTH12N40C1 HGTM12N40C1

igbt 300v 200a

Abstract: igbt for dc to ac inverter itachi H > Tc=25 ºC Tc=125 ºC (@IC=100A, VGE=15V) IC ( 20A/div , Series IGBT 600V class 1200V class Low Loss 2 2 Improved Thermal Impedance 3 3 , chi 4t Hita GR Series 1200V class No. RT-MA-99-009 Trade-Off Curves for GR Series IGBT Trade-Off Curves for GR Series IGBT > 40 GS Series 35 (Hitachi 3 30 Eoff , IGBT (@TC=125 ) =125ºC > type GS Series (Hitachi 3rd Gen.) GR Series
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igbt 300v 200a igbt for dc to ac inverter inverter dc to ac igbt 200v 20a IGBT inverter Hitachi dc ac inverter circuit igbt
Abstract: C = 250µA VGE, I C = 3mA (25-125°C) = = = = = 50V, IC = 20A, PW = 0V, V CE = 1200V, TJ , Number = 1200V) IGBT) Special Option Circuit Configuration (20 Speed/ rating Current code Essential , 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features â'¢ UltraFast Non Punch , approved (File E78996) VCES = 1200V IC = 40A T C = 25°C Benefits â'¢ Optimized for Welding, UPS , Maximum Power Dissipation (only IGBT) Document Number: 93588 @ TC = 25°C 240 @ TC = 100 International Rectifier
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I27124

FZ1600R12KF4

Abstract: IGBT FZ 800 power . Home Products IGBT 600V the News 1200V Contact Job Offers , the Products IGBT 600V News 1200V Editorials Job Offers Low Loss. Company , IHM140x190mm power the Home Products IGBT 600V Power Integrated Modules News 1200V , Explanation Single Diode 62mm power . Home Products IGBT 600V the News 1200V , Technical Explanation IGBT Driver power . Home the Products IGBT 600V News 1200V
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50GB60DLC 75GB60DLC 15GD60DLC FZ1600R12KF4 IGBT FZ 800 75GD120DN2 IGBT FZ 1200r16kf4 igbt driver FZ800R12KL4C 100GB60DLC 150GB60DLC 200GB60DLC 300GB60DLC

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode , I C = 250µA VGE, I C = 3mA (25-125°C) = = = = = 50V, IC = 20A, PW = 0V, V CE = 1200V, TJ , 20A) 3 - Voltage code (120 = 1200V) 4 - Speed/ Type (U 5 - Circuit , I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features · , approved (File E78996) VCES = 1200V IC = 40A T C = 25°C Benefits · Optimized for Welding, UPS and , , Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation (only IGBT) www.irf.com
International Rectifier
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SMPS CIRCUIT DIAGRAM 5V 20A 400v 20A ultra fast recovery diode 1E-006 1E-005

ir igbt 1200V 40A

Abstract: 20MT120UF Number = 1200V) IGBT) Special Option Circuit Configuration (20 Speed/ rating Current code Essential , 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features · UltraFast Non Punch Through , E78996) VCES = 1200V IC = 40A T C = 25°C Benefits · Optimized for Welding, UPS and SMPS , Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation (only IGBT , = = 15V, I C = 20A 15V, I C = 40A 15V, I C = 20A T J = 125°C 15V, I C = 40A T J = 125°C 15V
International Rectifier
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ir igbt 1200V 40A E78996 bridge

ultrafast diode 10a 400v

Abstract: X 0238 CE Voltage code Speed/ Type Special Option (20 = 20A) (120 = 1200V) (U = Ultra Fast IGBT) = Full Bridge , 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP Features · UltraFast Non Punch Through (NPT) UltraFast NPT IGBT Technology · Positive VCE(ON)Temperature Coefficient , Operation · UL approved (File E78996) VCES = 1200V IC = 40A TC = 25°C Benefits · Optimized for , IGBT) CM LM F FM VGE VISOL PD V W www.irf.com 1 20MT120UF Bulletin I27124 rev. B 10
International Rectifier
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ultrafast diode 10a 400v X 0238 CE
Abstract: = = = = 50V, I C = 20A, PW = 0V, V CE = 1200V, T J 0V, V CE = 1200V, T J 0V, V CE = 1200V , (20 = 20A) 3 - Voltage code (120 = 1200V) 4 - Speed/ Type (U 5 - , 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features â'¢ UltraFast Non Punch Through (NPT) Technology â'¢ Positive VCE(ON)Temperature , Design for High Speed Operation â'¢ UL approved (File E78996) VCES = 1200V VCE(on) typ. = 4.42V @ International Rectifier
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TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 1000v 10A HGTG34N100E2 HGTD8P50G1, HGTD8P50G1S 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast D io d e , . 20A, 1000V N-Channel IGBT , - MCT/IGBT/DIODES 3 PAGE 3-3 3-7 INSULATED GATE BIPOLAR TRANSISTORS SELECTION G U ID , . . 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast D io d e , , (Continued) PAGE 15A, 20A, 400V and 500V N-Channel IG B T s
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TRANSISTOR BIPOLAR 400V 20A P-Channel IGBT P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A IGBT 40A HGTD6N40E1S HGTD6N50E1S HGTP6N40E1D HGTP6N50E1D HGTP10N40C1 HGTP10N40C1D

20MT120UF

Abstract: diode 1000V 20a Design for High Speed Operation VCES = 1200V VCE(on) typ. = 3.05V @ VGE = 15V, IC = 20A TC = 25 , V ±100 nA V CE V GE V GE IC = IC = IC = IC = V GE = 50V, I C = 20A, PW = 80µs = 0V, V CE = 1200V, T J = 125°C = 0V, V CE = 1200V, T J = 150°C 20A 25A 20A, T J = 125°C 25A, T J , Target Data 05/01 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features · , C = 20A V GE = 15V, I C = 25A V GE = 15V, I C = 40A V GE = 15V, I C = 20A T J = 125°C V GE = 15V
International Rectifier
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diode 1000V 20a 20MT120U

tyco igbt module 25A

Abstract: 2kw pfc covers a broad power spectrum, ranging from 5A to 450A at 600V and 1200V. Vincotech Fast Power Modules are available in 2 different standard housings for up to 100A at 600V and 1200V and are suitable for switching frequencies of up to 400kHz at 600V and 50kHz at 1200V. fastPACK 0 H 2nd gen W W , ) V23990-P629-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 30A , ) V23990-P729-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V P723-P729 Current
Vincotech
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tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A P623-P629 V23990-P622-F64-PM V23990-P622-F74-PM1 V23990-P623-F-PM2 V23990-P623-F04-PM V23990-P623-F10-PM1
Abstract: FGH40N120AN 1200V NPT IGBT September 2007 ® FGH40N120AN 1200V NPT IGBT Features · High , www.fairchildsemi.com FGH40N120AN Rev. A1 FGH40N120AN 1200V NPT IGBT Package Marking and Ordering Information , www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output , ] Gate-Emitter Voltage, VGE [V] 3 FGH40N120AN Rev. A1 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT , FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss Fairchild Semiconductor
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FGL40N120AND

Abstract: IGBT 200A 1200V application induction heating FGL40N120AND 1200V NPT IGBT Features Description · High speed switching Employing NPT , FGL40N120AND Rev. A 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT January 2006 Device , FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol Parameter VFM , 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT IGBT Typical , ] Collector Current, IC [A] 5 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical
Fairchild Semiconductor
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IGBT 200A 1200V application induction heating 100W UPS igbt for induction heating

mosfet 1200V 40A

Abstract: mosfet 1200V 30a smps Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through (NPT). Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA RANGE (D-PAK) 1 ~ 6A , available. - HGTG40N60C3 HGT1Y40N60C3D* On the reverse side, you'll find 1200V IGBT Selection , requirements. You provide the challenges, we'll provide the solutions. 1200V IGBT SELECTION GUIDE PACKAGE , high voltage switch? TO-268AA Solution - Intersil has a 1200V IGBT family featuring: · NPT
Intersil
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HGTD3N60A4S HGTD3N60C3S HGTD3N60B3S HGTP20N60A4 mosfet 1200V 40A mosfet 1200V 30a smps Igbts guide HGTG11N120CND LC-96585 HGT1S3N60A4S HGT1S3N60A4DS HGTP3N60B3

FGL40N120AND

Abstract: tm FGL40N120AND 1200V NPT IGBT Features Description · High speed switching Employing , FGL40N120AND Rev. A2 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT February 2008 Device , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT , FGL40N120AND 1200V NPT IGBT tf t(o °ff T 1 ± G V C ) d Typical Performance Characteristics
Fairchild Semiconductor
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