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CC2560BRVMR Texas Instruments Bluetooth® CC2560 controller 76-VQFNP-MR -40 to 85
CC2560ARVMR Texas Instruments Bluetooth® CC2560 controller 76-VQFNP-MR -40 to 85
CC2560ARVMT Texas Instruments Bluetooth® CC2560 controller 76-VQFNP-MR -40 to 85
TPS92560DGQ/NOPB Texas Instruments Simple LED Driver for MR16 and AR111 Applications 10-MSOP-PowerPAD -40 to 125
TPS92560DGQR/NOPB Texas Instruments Simple LED Driver for MR16 and AR111 Applications 10-MSOP-PowerPAD -40 to 125
TAS2560YFFT Texas Instruments 5.6W Class-D Mono Audio Amplifier with IV Sense 30-DSBGA -40 to 85

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ids 2560

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: E-PHEMT TAV-551+ Typical Performance Data IDS (mA) VDS (V) @ VGS= 0.20V 0.00 0.10 , Data GAIN (dB) (1) IDS (mA) VDS=+3V OIP3 (dBm) (1) VDS=+4V VDS=+3V VDS=+4V 0.9 GHz , 24.00 30.00 35.90 Pout @ 1dB Compression (1,2) (dBm) IDS (mA) VDS=+3V NOISE FIGURE (1 , 4.50 4.75 5.00 5.25 5.50 5.75 6.00 NF vs FREQ & TEMPERATURE (1) @ VDS=3V, IDS=15mA NF vs FREQ & TEMPERATURE (1) @ VDS=4V, IDS=15mA -40°C FREQ (GHz) +25°C +85°C -40°C +25°C Mini-Circuits
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VdS 2093 2009
Abstract: : VDD=4.5V, IDS=45mA, TA=25, 50ohm System Noise Figure vs Frequency S-parameter 25 20 10 , Application Circuit: 1900MHz ~ 2200MHz, 50ohm System Typical RF Performance: VDD=4.5V, IDS=45mA, TA , Typical RF Performance: VDD=4.5V, IDS=45mA, TA=25, 50ohm System S-parameter 25 20 20 10 2.5 , 2400 2440 2480 2520 2560 2600 Freq(MHz) OIP3 vs Frequency P1dB vs Frequency , 2440 2480 2520 2560 2600 2400 2440 2480 2520 2560 2600 Freq(MHz RFHIC
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RESISTOR SMD 2020 mmic e3 wifi amplifier circuit AE362 6000MH 2050MH 2200MH 64DPC
Abstract: Application Circuit: 800MHz ~ 900MHz, 50ohm System Typical RF Performance: VDD=5V, IDS=70mA, TA=25, 50ohm , Circuit: 1900MHz ~ 2200MHz, 50ohm System Typical RF Performance: VDD=5V, IDS=70mA, TA=25, 50ohm System , : VDD=5V, IDS=70mA, TA=25, 50ohm System S-parameter 20 Gain(dB) 16 20 10 S21 12 , 2.3 2.4 2.5 -30 2.7 2.6 Freq(GHz) 0.5 0.0 2400 2440 2480 2520 2560 , 22.0 34.0 20.0 32.0 18.0 30.0 2400 2440 2480 2520 2560 2600 16.0 RFHIC
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AE364 64DPCH
Abstract: Application Circuit: 1900MHz ~ 2200MHz, 50ohm System Typical RF Performance: VDD=5V, IDS=90mA, TA , 2.5pF Typical RF Performance: VDD=5V, IDS=90mA, TA=25, 50ohm System Noise Figure vs Frequench , 2480 2520 2560 2600 Freq(MHz) P1dB vs Frequency OIP3 vs Frequency 42.0 28.0 , 2560 2600 18.0 2400 2440 2480 Freq(MHz) 2520 2560 Freq(MHz) Tel RFHIC
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AE384
Abstract: Vt < 1.2V) High value poly resistor 1-2 or 25-60 k/square Poly 2 (Cap Top Plate) Capacitor implant , sum of Vt < 1.2V High value poly 2 resistor 1-2 or 25-60 k/square N-Ldd N-ch for 10V operation , . Contact factory for details.) Low TC SiCr resistor: 500+/-100 /square Vt(30X2.0u) Ids Gain uC (30X30 Supertex
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SiCr SiCr resistor
Abstract: resistor 1k/square or 25-60 k/square Poly 2 active device allowed Multiple thresholds with controlled , resistor 1k/square or 25-60 k/square Ldd N-ch for 10V operation Delta Vt=300mV on multiple thresholds option Vt(30X2.0u) Ids Gain uC (30X30) Body Effect Sub-threshold slope Leff Xj Rs Rs poly Supertex
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resistor 1k CAPACITOR Titanium
Abstract: High value poly resistor 1k/square or 25-60 k/square Capacitor implant for poly to substrate cap , value poly 2 resistor 1k/square or 25-60 k/square N-P-N Unit Rbase Value 1.6 +/-0.3 k/square , Poly) Vt(30X1.2u) Ids Gain uC (30X30) Body Effect Sub-threshold slope Leff Xj Rs Rs poly Supertex
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Abstract: resistor 1k/square or 25-60 k/square Poly 2 active device allowed Native thresholds using implant , High value poly 2 resistor 1k/square or 25-60 k/square N-P-N Unit Rbase Value 1.7 +/-0.3 k/square Beta 70-210 Vbe 0.60+/-0.07 volt, Ib=1uA, EA=3.6 X 3.6 Vt(30X2.0u) Ids Gain uC Supertex
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70210
Abstract: Resistance MAX TEST CONDITIONS Gi rl ADD Ids Idss Rg = 1 0 0 n V ds = 1.5 V, V gs = 0 V V ds = 2.5 V ; Ids = 40 mA Igd = 40 mA Vp BVGD R th Channel to Case NEZ1414-4E ABSOLUTE MAXIMUM RATINGS1 (Tc = 25 °C unless otherwise noted) SYMBOLS Vos V gs Ids Igf Igr RECOMMENDED OPERATING LIMITS , ' VDS = 9 V, IDS = 700 mA, VGS = 7.55 V FREQUENCY (GHz) 11.00 11.50 12.00 12.50 13.00 13.50 , -4E TYPICAL SCATTERING PARAMETERS V ds = 9 V, Ids = 1000 mA, V gs = 0.610 V FREQUENCY (GHz) 11.00 11.50 -
OCR Scan
str 0765 gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 NEZ1414 IS12I IS11I2 IS22I2
Abstract: TSM12N02 N-Channel Enhancement Mode MOSFET VDS = 20V Pin assignment: 1. Gate 2. Drain 3. Source ID = 12A RDS (on), Vgs @ 10V, Ids@8A = 30m RDS (on), Vgs @ 4.5V, Ids@6A = 40m Features Low gate charge High Density Cell Design for Ultra Low On-Resistance Advanced trench process technology Block Diagram Fully Characterized Avalanche Voltage and Current High performance technology , 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 Taiwan Semiconductor
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TSM12N02CP
Abstract: Channel Temperature Storage Temperature Symbol VDS VGS IDS PTOT TCH TSTG Condition Ta , VDS=3V, IDS=0.92mA - 0.8 - Output Power PO (*1), PIN=15dBm 27 28.5 Drain , CHARACTERISTICS f=1900MHz PO and D vs. PIN PO and IDS vs. PIN 80 Po 20 60 10 40 D 0 , =70mA f1=1900MHz 30 400 Po 20 300 10 200 IDS 0 100 PO1 =28.4dBm GLIN =14.4dB -10 30 Operating Current IDS (mA) 30 Output Power IDSQ=70mA, f=1900MHz 40 PO OKI Electric Industry
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KGF1921 86210 but 70 151169 55076 ODRKGF1921-04
Abstract: TSM35N03 Pin assignment: 1. Gate 2. Drain 3. Source Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 35A RDS (on), Vgs @ 10V, Ids @ 30A = 8.5m RDS (on), Vgs @ 4.5V, Ids @ 30A = 13m Features High Density Cell Design for Ultra Low On-Resistance Advanced trench process technology Fully Characterized Avalanche Voltage and Current Specially Designed for DC/DC Converters and , MILLIMETERS MIN 6.570 9.250 0.550 2.560 2.300 0.490 1.460 0.520 5.340 1.460 MAX 6.840 10.400 0.700 2.670 2.390 Taiwan Semiconductor
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TSM35N03CP
Abstract: TSM55N03 Pin assignment: 1. Gate 2. Drain 3. Source Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 55A RDS (on), Vgs @ 10V, Ids @ 30A = 6m RDS (on), Vgs @ 4.5V, Ids @ 30A = 9m Features High Density Cell Design for Ultra Low On-Resistance Advanced trench process technology Improved Shoot-Through FOM Fully Characterized Avalanche Voltage and Current Specially Designed , -252 DIMENSION MILLIMETERS MIN 6.570 9.250 0.550 2.560 2.300 0.490 1.460 0.520 5.340 1.460 MAX 6.840 10.400 0.700 Taiwan Semiconductor
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TSM55N03CP
Abstract: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 25V ID = 55A RDS (on), Vgs @ 10V, Ids @ 30A = 6m RDS (on), Vgs @ 4.5V, Ids @ 30A = 9m Features Advanced trench process technology Fully Characterized Avalanche Voltage and Current High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor , 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 0.094 Taiwan Semiconductor
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25V 55A to-252
Abstract: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS (on), Vgs @ 10V, Ids @ 30A = 8.5m RDS (on), Vgs @ 4.5V, Ids @ 30A = 13m Pin assignment: 1. Gate 2. Drain 3. Source Features Advanced trench process technology Fully Characterized Avalanche Voltage and Current High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters , 6.840 0.259 0.269 9.250 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 Taiwan Semiconductor
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50a 30v 8.5m MOSFET
Abstract: Vp VDS=50V IDS=36mA -1.0 -2.0 3dB Gain Compression Power P3dB VDS=50V 49.5 50.5 - dBm - 55 - % 11.0 12.0 - Drain Efficiency d IDS(DC)=500mA , Power VDS=50V IDS(DC)=500mA f=2.2GHz Output Power vs. Frequency VDS=50V IDS(DC)=500mA 50 90 , GaN-HEMT S-Parameters (1Port) @VDS=50V IDS=250mA f=0.5 to 5.5 GHz Zl = Zs = 50 ohm Marker : 2.2GHz , -23.29 0.016 60.11 0.94 147.90 0.57 -25.60 0.018 60.98 0.94 146.58 0.55 -27.58 0.019 59.39 0.94 145.37 Sumitomo Electric
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JESD22-A114 EGNB090M1A
Abstract: . Limit Typ. Max. Unit Pinch-Off Voltage Vp VDS=50V IDS=36mA -1.0 -2.0 3dB Gain , Drain Efficiency Linear Gain Thermal Resistance d GL Rth IDS(DC)=500mA f=2.2GHz Channel to , Efficiency vs. Input Power VDS=50V IDS(DC)=500mA f=2.2GHz Output Power vs. Frequency VDS=50V IDS(DC , S-Parameters (1Port) @VDS=50V IDS=250mA f=0.5 to 5.5 GHz Zl = Zs = 50 ohm Marker : 2.2GHz +j50 1 +j100 , -25.60 0.018 60.98 0.94 146.58 0.55 -27.58 0.019 59.39 0.94 145.37 0.53 -29.78 0.020 60.05 0.94 144.21 Sumitomo Electric
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Abstract: Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev B Preliminary Datasheet Features , Symbol Typical Units Bandwidth f 2.5-6.0 GHz Output Power POUT 33.5 dBm , 2.5-6.0 GHz MAAPGM0066-DIE Rev B Preliminary Datasheet Maximum Ratings3 Parameter Absolute , 2.5-6.0 GHz MAAPGM0066-DIE Rev B Preliminary Datasheet All Data is at 30ºC MMIC base temperature , 0.80 35 0.75 34 0.70 33 0.65 Pout SSG PAE IDS 32 31 4 0 1 2.0 2.5 M/A-COM
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MAAP-000066-PKG003 MAAP-000066-SMB004 MAAP-000066-MCH000
Abstract: Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet Features , Typical Units Bandwidth f 2.5-6.0 GHz Output Power POUT 33.5 dBm 1 , 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet Maximum Ratings3 Parameter Absolute , 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30ºC MMIC base temperature , 0.85 36 0.80 35 0.75 34 0.70 33 0.65 Pout SSG PAE IDS 32 31 4 0 M/A-COM
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Abstract: , VGS = 0 V VDS = 2.5 V; IDS = 40 mA IGD = 40 mA Channel to Case MAX TEST CONDITIONS ADD IDS IDSS VP , -3E ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C unless otherwise noted) SYMBOLS VDS VGS IDS IGF IGR PT TCH TSTG , ° VDS = 10 V, IDS = 500 mA, VGS = 1.1 V FREQUENCY (GHz) 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.10 , -j100 2 1 3 4 -j25 -j50 225° S21 315° 5 270° VDS = 10 V, IDS = 700 mA, VGS = 0.92 V , 0.452 0.288 0.241 0.196 0.160 0.139 0.142 0.313 0.439 0.493 S22 ANG 51.00 25.60 -4.90 -37.80 -76.90 California Eastern Laboratories
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tc 2608 NEZ1414-3E
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