NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Vt < 1.2V) High value poly resistor 1-2 or 25-60 k/square Poly 2 (Cap Top Plate) Capacitor implant , sum of Vt < 1.2V High value poly 2 resistor 1-2 or 25-60 k/square N-Ldd N-ch for 10V operation , Contact factory for details.) Low TC SiCr resistor: 500+/-100 /square Vt(30X2.0u) Ids Gain uC (30X30 30X30 ... | Original |
1 pages, |
30X30 ids 2560 datasheet abstract |
|
|||
| Abstract: resistor 1k/square or 25-60 k/square Poly 2 active device allowed Multiple thresholds with controlled , resistor 1k/square or 25-60 k/square Ldd N-ch for 10V operation Delta Vt=300mV on multiple thresholds option Vt(30X2.0u) Ids Gain uC (30X30 30X30) Body Effect Sub-threshold slope Leff Xj Rs Rs poly ... | Original |
1 pages, |
CAPACITOR Titanium 30X30 resistor 1k datasheet abstract |
|
|||
| Abstract: Typical RF Performance: VDD=4.5V, IDS=45mA, TA=25, 50ohm System Noise Figure vs Frequency S-parameter , : VDD=4.5V, IDS=45mA, TA=25, 50ohm System Isolation vs Frequency Gain vs Frequency 20.0 -21.0 85°C , ~ 2600MHz, 50ohm System Typical RF Performance: VDD=4.5V, IDS=45mA, TA=25, 50ohm System S-parameter 25 , ) 2.0 1.5 1.0 0.5 0.0 2400 2440 2480 2520 2560 2600 Freq(MHz) OIP3 vs , 16.0 26.0 14.0 2400 2440 2480 2520 2560 2600 2400 2440 2480 2520 ... | Original |
5 pages, |
wifi amplifier circuit mmic e3 ids 2560 RESISTOR SMD 2020 AE362 AE362 abstract |
|
|||
| Abstract: Application Circuit: 800MHz ~ 900MHz, 50ohm System Typical RF Performance: VDD=5V, IDS=70mA, TA=25, 50ohm , Circuit: 1900MHz ~ 2200MHz, 50ohm System Typical RF Performance: VDD=5V, IDS=70mA, TA=25, 50ohm System , : VDD=5V, IDS=70mA, TA=25, 50ohm System S-parameter 20 Gain(dB) 16 20 10 S21 12 , 2.3 2.4 2.5 -30 2.7 2.6 Freq(GHz) 0.5 0.0 2400 2440 2480 2520 2560 , 22.0 34.0 20.0 32.0 18.0 30.0 2400 2440 2480 2520 2560 2600 16.0 ... | Original |
5 pages, |
mmic e3 AE364 AE364 abstract |
|
|||
| Abstract: resistor 1k/square or 25-60 k/square Poly 2 active device allowed Native thresholds using implant , High value poly 2 resistor 1k/square or 25-60 k/square N-P-N Unit Rbase Value 1.7 +/-0.3 k/square Beta 70-210 Vbe 0.60+/-0.07 volt, Ib=1uA, EA=3.6 X 3.6 Vt(30X2.0u) Ids Gain uC ... | Original |
2 pages, |
30X30 resistor 1K datasheet abstract |
|
|||
| Abstract: High value poly resistor 1k/square or 25-60 k/square Capacitor implant for poly to substrate cap , value poly 2 resistor 1k/square or 25-60 k/square N-P-N Unit Rbase Value 1.6 +/-0.3 k/square , Poly) Vt(30X1.2u) Ids Gain uC (30X30 30X30) Body Effect Sub-threshold slope Leff Xj Rs Rs poly ... | Original |
2 pages, |
30X30 datasheet abstract |
|
|||
| Abstract: Application Circuit: 1900MHz ~ 2200MHz, 50ohm System Typical RF Performance: VDD=5V, IDS=90mA, TA=25 , 2.5pF Typical RF Performance: VDD=5V, IDS=90mA, TA=25, 50ohm System Noise Figure vs Frequench , 2480 2520 2560 2600 Freq(MHz) P1dB vs Frequency OIP3 vs Frequency 42.0 28.0 , 2560 2600 18.0 2400 2440 2480 Freq(MHz) 2520 2560 Freq(MHz) Tel ... | Original |
4 pages, |
mmic e3 ids 2560 AE384 AE384 abstract |
|
|||
| Abstract: Channel Temperature Storage Temperature Symbol VDS VGS IDS PTOT TCH TSTG Condition Ta=25°C , , IDS=0.92mA - 0.8 - Output Power PO (*1), PIN=15dBm 27 28.5 Drain Efficiency D , f=1900MHz PO and D vs. PIN PO and IDS vs. PIN 80 Po 20 60 10 40 D 0 20 , f1=1900MHz 30 400 Po 20 300 10 200 IDS 0 100 PO1 =28.4dBm GLIN =14.4dB -10 30 Operating Current IDS (mA) 30 Output Power IDSQ=70mA, f=1900MHz 40 PO (dBm ... | Original |
8 pages, |
KGF1921 ids 2560 55076 86210 but 70 ODRKGF1921-04 KGF1921 abstract |
|
|||
| Abstract: TSM12N02 TSM12N02 N-Channel Enhancement Mode MOSFET VDS = 20V Pin assignment: 1. Gate 2. Drain 3. Source ID = 12A RDS (on), Vgs @ 10V, Ids@8A = 30m RDS (on), Vgs @ 4.5V, Ids@6A = 40m Features Low gate charge High Density Cell Design for Ultra Low On-Resistance Advanced trench process technology Block Diagram Fully Characterized Avalanche Voltage and Current High performance technology , 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 ... | Original |
3 pages, |
TSM12N02CP TSM12N02 TSM12N02 abstract |
|
|||
| Abstract: TSM55N03 TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 25V ID = 55A RDS (on), Vgs @ 10V, Ids @ 30A = 6m RDS (on), Vgs @ 4.5V, Ids @ 30A = 9m Features Advanced trench process technology Fully Characterized Avalanche Voltage and Current High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters , 6.570 6.840 0.259 0.269 9.250 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 ... | Original |
3 pages, |
TSM55N03CP TSM55N03 TSM55N03 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| ! FILENAME: N650027A N650027A N650027A N650027A.S2P VERSION: 13.1 ! NEC PART NUMBER: NE6500278 NE6500278 NE6500278 NE6500278 DATE: 10/96 ! BIAS CONDITIONS: VDS=6V, IDS=100mA, VGS=-2.13V, CS # GHZ S MA R 50 0.400 0.939 -169.90 2.890 87.40 0.028 6.40 0.802 178.70 0.448 0.940 -172.40 2.584 85.20 0.028 5 .10 0.031 0.60 0.805 159.40 2.560 0.949 150.70 0.513 30.10 0.031 1.70 0.804 159 .516 27.40 0.033 0.40 0.798 157.60 2.704 0.942 147.30 0.519 25.60 0.034 0.40 0 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/cel_spice_files_and_s2p_files/discrete%20power%20device/s-param/n650027a.s2p |
Spice Models | 29/07/2012 | 3.86 Kb | S2P | n650027a.s2p |
| ! FILENAME: N650027G N650027G N650027G N650027G.S2P VERSION: 13.1 ! NEC PART NUMBER: NE6500278 NE6500278 NE6500278 NE6500278 DATE: 10/96 ! BIAS CONDITIONS: VDS=6V, IDS=500mA, VGS=-1.74V, CS # GHZ S MA R 50 0.400 0.961 -171.60 3.136 88.40 0.015 13.70 0.862 176.60 0.448 0.961 -173.90 2.797 86.50 0.014 16 .749 56.30 0.019 25.60 0.862 163.20 1.744 0.966 160.10 0.731 55.10 0.019 24.70 0 .40 0.027 29.50 0.848 156.20 2.560 0.964 149.70 0.575 39.40 0.028 27.30 0.839 155 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/cel_spice_files_and_s2p_files/discrete%20power%20device/s-param/n650027g.s2p |
Spice Models | 29/07/2012 | 3.86 Kb | S2P | n650027g.s2p |
| = .1 |* | vgs vs ids table |* | | Voltage I MOSFET] | Vds = .2 |* | vgs vs ids table |* | | Voltage |* | vgs vs ids table |* | | Voltage I(typ) I(min) I(max) 3.000E-01 000E-01 000E-01 000E-01 3 4.2320E-02 2320E-02 2320E-02 2320E-02 4.7940E-02 7940E-02 7940E-02 7940E-02 3.600E+00 4.5280E-02 5280E-02 5280E-02 5280E-02 4.2560E-02 4.8300E-02 8300E-02 8300E-02 8300E-02 | [series MOSFET] | Vds = .4 |* | vgs vs ids table |* | | Voltage I(typ) I(min) I(max] 4.000E-01 000E-01 000E-01 000E-01 6 www.datasheetarchive.com/files/nxp/misc/support/models/cbt/ibis/cbtl02043abq.ibs |
NXP | 11/10/2011 | 22.99 Kb | IBS | cbtl02043abq.ibs |
| = .1 |* | vgs vs ids table |* | | Voltage I MOSFET] | Vds = .2 |* | vgs vs ids table |* | | Voltage |* | vgs vs ids table |* | | Voltage I(typ) I(min) I(max) 3.000E-01 000E-01 000E-01 000E-01 3 4.2320E-02 2320E-02 2320E-02 2320E-02 4.7940E-02 7940E-02 7940E-02 7940E-02 3.600E+00 4.5280E-02 5280E-02 5280E-02 5280E-02 4.2560E-02 4.8300E-02 8300E-02 8300E-02 8300E-02 | [series MOSFET] | Vds = .4 |* | vgs vs ids table |* | | Voltage I(typ) I(min) I(max] 4.000E-01 000E-01 000E-01 000E-01 6 www.datasheetarchive.com/files/nxp/misc/support/models/cbt/ibis/cbtl04083bbs.ibs |
NXP | 11/10/2011 | 24.6 Kb | IBS | cbtl04083bbs.ibs |
| | [On] | [series MOSFET] | | Vds = .1 |* | vgs vs ids table 1.7190E-02 7190E-02 7190E-02 7190E-02 | [series MOSFET] | Vds = .2 |* | vgs vs ids table |* | vgs vs ids table |* | | Voltage I(typ) I(min) I(max) 3.000E-01 000E-01 000E-01 000E-01 3 4.2320E-02 2320E-02 2320E-02 2320E-02 4.7940E-02 7940E-02 7940E-02 7940E-02 3.600E+00 4.5280E-02 5280E-02 5280E-02 5280E-02 4.2560E-02 4.8300E-02 8300E-02 8300E-02 8300E-02 | [series MOSFET] | Vds = .4 |* | vgs vs ids table |* | | Voltage I(typ) I(min) I(max] 4.000E-01 000E-01 000E-01 000E-01 6 www.datasheetarchive.com/files/nxp/misc/support/models/cbt/ibis/cbtl04083abs.ibs |
NXP | 11/10/2011 | 24.61 Kb | IBS | cbtl04083abs.ibs |
| = .1 |* | vgs vs ids table |* | | Voltage I MOSFET] | Vds = .2 |* | vgs vs ids table |* | | Voltage |* | vgs vs ids table |* | | Voltage I(typ) I(min) I(max) 3.000E-01 000E-01 000E-01 000E-01 3 4.2320E-02 2320E-02 2320E-02 2320E-02 4.7940E-02 7940E-02 7940E-02 7940E-02 3.600E+00 4.5280E-02 5280E-02 5280E-02 5280E-02 4.2560E-02 4.8300E-02 8300E-02 8300E-02 8300E-02 | [series MOSFET] | Vds = .4 |* | vgs vs ids table |* | | Voltage I(typ) I(min) I(max] 4.000E-01 000E-01 000E-01 000E-01 6 www.datasheetarchive.com/files/nxp/misc/support/models/cbt/ibis/cbtl02043bbq.ibs |
NXP | 11/10/2011 | 22.99 Kb | IBS | cbtl02043bbq.ibs |
| ! FILENAME: N650027E N650027E N650027E N650027E.S2P VERSION: 13.1 ! NEC PART NUMBER: NE6500278 NE6500278 NE6500278 NE6500278 DATE: 10/96 ! BIAS CONDITIONS: VDS=6V, IDS=400mA, VGS=-1.82V, CS # GHZ S MA R 50 0.400 0.959 -171.40 3.100 88.30 0.016 12.70 0.857 176.70 0.448 0.959 -173.80 2.766 86.40 0.016 13.60 0.857 176.10 0.496 0.960 -175.70 2.503 84.70 0.015 14.50 0.858 175.40 0 .70 0.027 25.20 0.844 156.40 2.560 0.962 149.70 0.569 38.70 0.028 25.20 0.838 155 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/cel_spice_files_and_s2p_files/discrete%20power%20device/s-param/n650027e.s2p |
Spice Models | 29/07/2012 | 3.86 Kb | S2P | n650027e.s2p |
| ! FILENAME: N1821B3G N1821B3G N1821B3G N1821B3G.S2P VERSION: 12.0 ! NEC PART NUMBER: NES1821B-30 NES1821B-30 NES1821B-30 NES1821B-30 DATE: 12/97 ! BIAS CONDITIONS: VDS=10V, IDS=500mA, VGS=-2.48V, CS # GHZ S MA R 50 0.500 0.966 164.30 0.503 54.20 0.006 -20.90 0.892 167.00 0.540 0.965 163.00 0.478 51.40 0.006 -24.20 0.891 166.80 0.580 0.964 161.50 0.459 48.40 0.006 -26.40 0.892 165.90 0 .061 -25.60 0.965 138.00 2.180 0.885 90.00 0.998 37.50 0.049 -36.70 1.013 131.10 2 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/cel_spice_files_and_s2p_files/discrete%20power%20device/s-param/n1821b3g.s2p |
Spice Models | 29/07/2012 | 3.86 Kb | S2P | n1821b3g.s2p |
| ! FILENAME: N650027D N650027D N650027D N650027D.S2P VERSION: 13.1 ! NEC PART NUMBER: NE6500278 NE6500278 NE6500278 NE6500278 DATE: 10/96 ! BIAS CONDITIONS: VDS=6V, IDS=350mA, VGS=-1.86V, CS # GHZ S MA R 50 0.400 0.957 -171.40 3.081 88.30 0.016 12.70 0.854 176.90 0.448 0.958 -173.70 2.750 86.40 0.016 12.70 0.853 176.10 0.496 0.959 -175.70 2.488 84.70 0.017 13.40 0.855 175.60 0 .20 0.027 24.80 0.841 156.50 2.560 0.962 149.80 0.566 38.20 0.028 24.30 0.837 156 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/cel_spice_files_and_s2p_files/discrete%20power%20device/s-param/n650027d.s2p |
Spice Models | 29/07/2012 | 3.86 Kb | S2P | n650027d.s2p |
| ! FILENAME: N650027C N650027C N650027C N650027C.S2P VERSION: 13.1 ! NEC PART NUMBER: NE6500278 NE6500278 NE6500278 NE6500278 DATE: 10/96 ! BIAS CONDITIONS: VDS=6V, IDS=300mA, VGS=-1.91V, CS # GHZ S MA R 50 0.400 0.956 -171.30 3.057 88.20 0.017 12.70 0.851 176.90 0.448 0.956 -173.60 2.731 86.30 0.017 11.80 0.850 176.30 0.496 0.957 -175.60 2.469 84.60 0.017 12.50 0.850 175.60 0 .60 0.027 23.50 0.838 156.70 2.560 0.961 149.90 0.561 37.50 0.028 23.90 0.834 156 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/cel_spice_files_and_s2p_files/discrete%20power%20device/s-param/n650027c.s2p |
Spice Models | 29/07/2012 | 3.86 Kb | S2P | n650027c.s2p |