NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| SN7472N | Texas Instruments | AND-Gated J-K Master-Slave Flip-Flop with Preset and Clear 14-PDIP 0 to 70 | 
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| SN7472N3 | Texas Instruments | AND-Gated J-K Master-Slave Flip-Flop with Preset and Clear 14-PDIP 0 to 70 |
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| SN7472J-00 | Texas Instruments | IC TTL/H/L SERIES, NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP14, FF/Latch |
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| SN7472J | Texas Instruments | IC TTL/H/L SERIES, NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP14, FF/Latch |
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| SN7472N-00 | Texas Instruments | IC TTL/H/L SERIES, NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, PDIP14, FF/Latch |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: V VEBO 1.5 V IC 40 mA IB 20 mA PC 100 , () ( ) ( ) 1 2007-11-01 2SC5090 2SC5090 (Ta = 25°C) GHz VCE = 8 V, IC = 20 mA 7 10 2 VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 2 VCE = 8 V, IC = 20 mA, f = 2 GHz 7 NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz 1.1 2.5 NF (2) VCE = 8 V, IC = 5 mA, f = 2 GHz 1.7 fT ... | Original |
7 pages, |
2SC5090 ic 1496 ic 7472 2SC5090 abstract |
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| Abstract: V VEBO 1.5 V IC 40 mA IB 20 mA PC 100 , () ( ) ( ) 1 2007-11-01 2SC5091 2SC5091 (Ta = 25°C) GHz VCE = 8 V, IC = 20 mA 7 10 2 VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 2 VCE = 8 V, IC = 20 mA, f = 2 GHz 7 NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz 1.1 2.5 NF (2) VCE = 8 V, IC = 5 mA, f = 2 GHz 1.7 fT ... | Original |
7 pages, |
ic 7472 2SC5091 2SC5091 abstract |
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| Abstract: Collector-Emitter Voltage vCEO 10 V Emitter-Base Voltage vEBO 1.5 V Base Current IB 20 mA Collector Current ic 40 , TYP. MAX. UN'IT Transition Frequency fT VCE = 8V, IC = 20mA 7 10 - GHz Insertion Gain |S2lel2(D Vce = 8V, Ic - 20mA, f=lGHz 10 13 - dB |S2lel2(2) Vce = 8V, Iq = 20mA, f=2GHz - 7 - Noise Figure NF (1) VCE = 8V, Iç; = 5mA, f = 1GHz - 1.1 2.5 dB NF (2) VCE = 8V, Iç; = 5mA, f = 2GHz - 1.7 - ELECTRICAL , Note VCE = 8V, Iç = 20mA 50 - 160 - Output Capacitance Cob Vcb = 10V, IE = 0, f= 1MHz (Note) - 0.7 - ... | OCR Scan |
5 pages, |
2SC5090 7472 ic IC 4407 ic 1496 specifications 2SC5090 abstract |
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| Abstract: Collector Current ic 40 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 125 °C Storage , MAX. UNIT Transition Frequency fT VCE = 8V, IC = 20mA 7 10 - GHz Insertion Gain |S2lel2(D vce = 8v, Ic - 20mA, f=lGHz 10 13 - dB |S2lel2(2) vce = 8v, Iq = 20mA, f=2GHz - 7 - Noise Figure NF (1) VCE = 8V, Iç; = 5mA, f = 1GHz - 1.1 2.5 dB NF (2) VCE = 8V, Iç; = 5mA, f = 2GHz - 1.7 - , juA DC Current Gain hps (Note 1) VCE = 8V, Iç = 20mA 50 - 160 - Output Capacitance Cob vcb = 10v ... | OCR Scan |
5 pages, |
ic 1496 specifications 2SC5091 7472 ci 2SC5091 abstract |
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| Abstract: Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage Vebo 1.5 V Base Current IB 20 mA Collector Current ic 40 , CONDITION MIN. TYP. MAX. UN'IT Transition Frequency fT VCE = 8V, Iç; = 20mA 7 10 - GHz Insertion Gain , Figure NF (1) VCE = 8V, Ic = 5mA, f = 1GHz - 1.1 2.5 dB NF (2) VCE = 8V, 1(2 = 5mA, f = 2GHz - 1.7 - , subject to change without notice. 1998-10-28 1/5 TOSHIBA 2SC5091 2SC5091 hFE - IC Cob, Cre - VCB VCE=8V Ta = 25°C 1 2 3 5 7 10 20 30 50 COLLECTOR CURRENT IQ (mA) fT - IC ... | OCR Scan |
5 pages, |
2SC5091 2SC5091 abstract |
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| Abstract: Voltage Vebo 1.5 V Base Current IB 20 mA Collector Current ic 40 mA Collector Power Dissipation PC 100 , Frequency fT VCE = 8V, Iç; = 20mA 7 10 - GHz Insertion Gain |S2lel2(D Vce = 8V, Iq = 20mA, f=lGHz 10 13 - dB |S2lel2 (2) VCE = 8V, Iq = 20mA, f=2GHz - 7 - Noise Figure NF (1) VCE = 8V, Ic = 5mA, f = 1GHz , /5 TOSHIBA 2SC5090 2SC5090 hFE - IC Cob; Cre - VQB VCE=8V Ta = 25°C 1 2 3 5 7 10 20 30 50 COLLECTOR CURRENT IQ (mA) fT - IC ... | OCR Scan |
5 pages, |
2SC5090 2SC5090 abstract |
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| Abstract: VEBO 1.5 V IB 20 mA Base current Collector current IC 40 mA Collector , Insertion gain Noise figure VCE = 8 V, IC = 20 mA 7 10 2 Transition frequency VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 2 S21e (2) VCE = 8 V, IC = 20 mA, f = 2 GHz 7 NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz 1.1 2.5 NF (2) VCE = 8 V, IC = 5 , ICBO VCB = 10 V, IE = 0 1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ... | Original |
7 pages, |
TRANSISTOR 4407 2SC5090 4407 ic data 2SC5090 abstract |
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| Abstract: VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector , GHz Insertion gain Noise figure VCE = 8 V, IC = 20 mA 7 10 ¾ 2 Transition frequency VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 ¾ 2 ïS21eï (2) VCE = 8 V, IC = 20 mA, f = 2 GHz ¾ 7 ¾ NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ¾ 1.1 2.5 NF (2) VCE = 8 V, IC = 5 mA, f = 2 GHz ¾ 1.7 ¾ Min Typ. Max fT ïS21eï (1) dB dB ... | Original |
7 pages, |
2SC5091 2SC5091 abstract |
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| Abstract: VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector , GHz Insertion gain Noise figure VCE = 8 V, IC = 20 mA 7 10 ¾ 2 Transition frequency VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 ¾ 2 ïS21eï (2) VCE = 8 V, IC = 20 mA, f = 2 GHz ¾ 7 ¾ NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ¾ 1.1 2.5 NF (2) VCE = 8 V, IC = 5 mA, f = 2 GHz ¾ 1.7 ¾ Min Typ. Max fT ïS21eï (1) dB dB ... | Original |
7 pages, |
2sc5090 2SC5090 2SC5090 abstract |
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| Abstract: Voltage VEBO 1.5 V Base Current IB 20 mA Collector Current ic 40 mA Collector Power Dissipation PC 100 , ¡jA Emitter Cut-off Current ÏEBO vEb=iv, ie=o - - 1 juA DC Current Gain hEE (Note 1) VCE = 8V, Iç; = , is measured by 3 terminal method with capacitance bridge. 1 2001-05-31 TOSHIBA 2SC5090 2SC5090 hFE - IC , VCE=8V Ta = 25°C 1 2 3 5 7 10 20 30 50 COLLECTOR CURRENT Iq (mA) fT - Ic VCE=8V Ta = 25°C 2 3 5 7 10 20 30 COLLECTOR CURRENT IC (mA) |S21el2 - f ... | OCR Scan |
6 pages, |
2SC5090 2SC5090 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| # HZ S MA R 50.0000 ! Device:2SC5415A 2SC5415A 2SC5415A 2SC5415A ! Bias:VCE=5V, IC=30mA ! !MHZ S11(MAG/ANG) S21(MAG/ANG) S12(MAG/ANG) S22(MAG/ANG) 100 0.373 �|79.4 24.799 120.4 0.026 67.6 0.598 �|36.8 200 0.245 �|114.8 14.190 102.5 0.043 69.5 0.418 �|39.2 400 0.183 �|154.3 7.472 87.6 0.077 71.8 0.331 �|38.5 600 0.174 �|175.8 5.102 78.5 0.112 70.9 0.310 �|41.3 800 0.177 163.8 3.872 70.4 0.147 68.7 0.305 �|46.3 1000 0.177 150.2 3.158 64.1 0.181 66.1 0.308 �|51.0 1200 0.190 139.3 2.681 57.4 0 www.datasheetarchive.com/download/28648269-601803ZC/2sc5415aspice-d.zip (5V30mA.s2p) |
On Semiconductor | 23/05/2012 | 74.79 Kb | ZIP | 2sc5415aspice-d.zip |
| INTEGRATED CIRCUIT SUPPLIERS ("IC VENDORS") | FOR USE AND DISTRIBUTION AS FOLLOWS: EACH IC VENDOR | MAY USE IBIS MODELS, AND DISTRIBUTE THEM TO IC VENDOR'S | CUSTOMERS TO USE, SOLELY FOR DEVELOPING PRINTED INTEGRATED CIRCUIT SUPPLIERS ("IC VENDORS") | FOR USE AND DISTRIBUTION AS FOLLOWS: EACH IC VENDOR | MAY USE IBIS MODELS, AND DISTRIBUTE THEM TO IC VENDOR'S | CUSTOMERS TO USE, SOLELY FOR DEVELOPING PRINTED INTEGRATED CIRCUIT SUPPLIERS ("IC VENDORS") | FOR USE AND DISTRIBUTION AS FOLLOWS: EACH IC VENDOR | MAY USE www.datasheetarchive.com/files/on_semiconductor/simulation-models/mc100el11d_-50.ibs |
On Semiconductor | 27/11/2010 | 5.96 Kb | IBS | mc100el11d_-50.ibs |
| ! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.5 V IC = 90 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .4 0.5212 -175.2 1.200 0.7472 168.2 5.912 73.3 0.0482 62.4 0.5215 -177.7 1.300 0.7481 166.8 5.446 71.4 0.0518 61.6 0.5221 -179.8 1.400 0.7472 165.6 5.007 70.0 0.0547 61 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy450/cy1v590m.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | cy1v590m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.5 V IC = 90 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .4 0.5212 -175.2 1.200 0.7472 168.2 5.912 73.3 0.0482 62.4 0.5215 -177.7 1.300 0.7481 166.8 5.446 71.4 0.0518 61.6 0.5221 -179.8 1.400 0.7472 165.6 5.007 70.0 0.0547 61 www.datasheetarchive.com/download/66784769-145423ZC/bfy450.zip (CY1V590M.S2P) |
Infineon | 08/09/2000 | 434.39 Kb | ZIP | bfy450.zip |
| ! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.5 V IC = 90 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .4 0.5212 -175.2 1.200 0.7472 168.2 5.912 73.3 0.0482 62.4 0.5215 -177.7 1.300 0.7481 166.8 5.446 71.4 0.0518 61.6 0.5221 -179.8 1.400 0.7472 165.6 5.007 70.0 0.0547 61 www.datasheetarchive.com/download/82445031-777200ZC/bfy450.zip (CY1V590M.S2P) |
Spice Models | 29/07/2012 | 434.39 Kb | ZIP | bfy450.zip |
| Models BF747/2 model(s) common =3.001V; IC=2.999mA; ! Company: Philips Semiconductors NL ! User: Q&R DSC-N ! Measure time: 8 Jan condition: Vce=10V ; Ic=5mA ! # MHz S MA R 50 ! Freq S11 S21 S12 Date: May 1990 ! Bias condition: Vce=10V ; Ic=2mA ! # MHz S MA R 50 ! Freq S11 condition: Vce=10V ; Ic=15mA ! # MHz S MA R 50 ! Freq S11 S21 S12 www.datasheetarchive.com/files/philips/models/bf747_2.html |
Philips | 23/04/2003 | 16.95 Kb | HTML | bf747_2.html |
| ! SIEMENS Small Signal Semiconductors ! BF799 BF799 BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 8 V IC = 7 mA ! Common Emitter S-Parameters: November 1990 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.050 0.7212 -74.0 14.986 137.0 0.0164 57.3 0 .800 0.7320 135.1 0.616 26.3 0.1773 94.0 0.7472 -52.4 2.000 0.7465 128.9 0.539 23.8 0 www.datasheetarchive.com/files/siemens/ehdata/spar/bf799/rt8v07m0-v1.s2p |
Siemens | 08/08/1994 | 1.89 Kb | S2P | rt8v07m0-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFE183 BFE183 BFE183 BFE183 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 8 V IC = 10 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.7110 -40.4 22.029 152.7 0.0193 71.3 0 .711 132.9 0.0317 60.5 0.7472 -29.1 0.250 0.5728 -85.2 15.837 125.6 0.0360 57.6 0.6834 -32 www.datasheetarchive.com/files/siemens/ehdata/spar/bfe183/e58v010m-v1.s2p |
Siemens | 08/08/1994 | 2.39 Kb | S2P | e58v010m-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFE183 BFE183 BFE183 BFE183 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 1.5 V IC = 2 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9103 -20.6 6.579 165.8 0.0278 78.6 0 .2 0.5740 -117.2 5.500 0.7348 100.9 0.668 7.7 0.3651 51.3 0.5851 -126.9 6.000 0.7472 94 www.datasheetarchive.com/files/siemens/ehdata/spar/bfe183/e51v52m0-v1.s2p |
Siemens | 08/08/1994 | 2.22 Kb | S2P | e51v52m0-v1.s2p |
| # GHz S MA R 50 ! 9 Sep 1992 / 14:17:27 !BFR93W BFR93W BFR93W BFR93W, Si-NPN RF-Transistor in SOT323 [8V015mW9] ! VCE= 8.00V, IC= 15.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .57193 -73.7 25.4132 134.8 .02312 61.3 .73984 -31.0 .150 .51528 -97.2 20 -39.2 .250 .46267 -125.1 13.7472 107.9 .03694 56.3 .46016 -40.0 .300 .44780 -134 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr93w/w98v015m.s2p |
Siemens | 09/09/1992 | 2.37 Kb | S2P | w98v015m.s2p |