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ic 0941

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: E R IC SSO N í PTE 10027* 12 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor , Gate Threshold Voltage Forward T ransconductance (100% Tested) E R IC SSO N ^ Conditions VGS= 0 V , Volts Siemens D ynam ic C haracteristics Characteristic Input Ca pa ci t anc e ( V D S = 2 8 V , V , ( V DS = 28 V, lDQ = 500 m A ) E R IC SSO N ^ f (MHz) 100 150 200 250 300 350 400 450 500 550 , 0.859 0.870 0.883 0.892 0.902 0.909 0.919 0.922 0.930 0.934 0.941 0.943 0.944 0.946 0.950 0.950 0.952 ... OCR Scan
datasheet

7 pages,
133.9 Kb

SIEMENS B 58 371 ericsson 10027 10027 mosfet ic 0941 TEXT
datasheet frame
Abstract: Revision date:18th /Nov.'02 RD30HUF1 RD30HUF1 RD30HUF1 RD30HUF1 C a p a c ita n c e -V d s c h a r a c t e r is t ic s , 0.932 0.933 0.932 0.934 0.934 0.935 0.936 0.936 0.938 0.938 0.938 0.939 0.939 0.940 0.939 0.940 0.941 0.941 0.942 0.941 0.942 0.946 0.943 0.944 0.944 0.944 0.945 0.947 0.945 0.946 0.946 0.944 (ang) -177.76 , 0.933 0.935 0.934 0.934 0.935 0.936 0.935 0.937 0.936 0.937 0.938 0.940 0.939 0.939 0.941 0.940 0.941 0.941 0.940 0.941 0.941 0.942 0.941 0.941 0.941 0.941 0.941 0.942 0.941 0.941 0.942 0.941 0.941 0.940 ... OCR Scan
datasheet

8 pages,
1302.69 Kb

147J 5498 transistor 5763 transistor IC 4490 17853 mosfet 17556 transistor transistor 17556 C 5763 transistor transistor 5763 transistor c 4793 mosfet 4459 equivalent transistor c 4793 transistor rf m 9860 TEXT
datasheet frame
Abstract: C12, C13 C15 0.1 jj.F , Ceram ic Capacitor 240 pF, ATC Type Chip Capacitor 270 pF, ATC Type Chip , Capacitor 47 pF, Mini Unelco Capacitor 0.1 jj.F , Ceram ic Capacitor 680 pF, Feed Thru Capacitor 50 jj.F , 0.936 0.938 0.937 0.937 0.938 0.938 0.939 0.939 0.939 0.940 0.940 0.940 0.940 0.941 0.941 0.941 0.941 , 0.917 0.913 0.909 0.913 0.916 0.914 0.935 0.943 0.951 0.943 0.940 0.948 0.957 0.941 0.931 0.922 0.965 0.927 0.924 0.930 0.933 0.940 0.941 0.945 0.953 0.952 0.927 0.921 0.929 0.963 0.968 0.937 0.907 0.912 ... OCR Scan
datasheet

13 pages,
636.99 Kb

SU 179 transistor RF275L/D TEXT
datasheet frame
Abstract: ERICSSON ^ T y p ic a l P e r fo r m a n c e PTF 10027 Gain vs. Power Output Power Output (Watts , 0.919 0.922 0.930 0.934 0.941 0.943 0.944 0.946 0.950 0.950 0.952 0.952 0.952 0.953 0.956 0.954 0.952 , 0.940 0.940 0.940 0.940 0.941 0.941 0.942 0.945 0.951 S21 Ang -129 -145 -153 -158 -162 -165 -169 , 0.881 0.897 0,906 0.912 0,921 0.926 0.933 0.933 0.944 0.938 0.947 0.942 0.947 0.941 0.952 0.938 0,950 0.941 0.942 0,941 0.946 0.938 0.948 0.945 0.940 0.949 0.943 0.944 Ang -?n .4 -105 -116 -123 -129 ... OCR Scan
datasheet

6 pages,
223.08 Kb

f 0952 ericsson 10027 IEC-68-2-54 TEXT
datasheet frame
Abstract: ic Characteristics Characteristic I nput C a p ac i t a nc e Symbol Min Typ 26 Max , 0.949 0.949 0.947 0.949 0.948 0.945 0.943 0.941 0.941 0.938 0.938 0.937 0.935 0.939 0.938 0.941 0.941 , 0.836 0.849 0.864 0.876 0.883 0.896 0.903 0.910 0.919 0.922 0.927 0.930 0.933 0.939 0.939 0.941 0.942 ... OCR Scan
datasheet

5 pages,
115.51 Kb

transistor D 1666 1216 mosfet siemens TEXT
datasheet frame
Abstract: commercial equipment operating in the range of 800 ­ 960 MHz. · Specified for VCE = 24 Vdc, IC = 0.5 Adc , Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power · Will Withstand RF Input , CHARACTERISTICS Collector­Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector­Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Collector­Base Breakdown Voltage (IC = 20 mA, IE = 0) Emitter­Base Breakdown Voltage (IE = 1 mA, IC = 0) Collector Cutoff Current (VCB = 24 V, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ... Motorola
Original
datasheet

5 pages,
69.76 Kb

358E-06 TEXT
datasheet frame
Abstract: HANDLING Revision date:20lh /Nov/02 ELETROSTATIC SENSITIVE v.:;-' d e v ic e s RD30HVF1 RD30HVF1 , 22 4 .4 12 10 1. 6m T h ic k g l a s s - t e f lo n m £ r=2. 7 L3:6D 4T 1P O 1.6mm s , s c h a r a c t e r is t ic s 0 0.5 _ 1 1.5 2 2.5 3 3.5 4 , -178.86 0.005 -3.71 1.117 41.71 0.891 -172.12 500 0.941 -178.93 0.005 “ 2.11 1.100 41.55 0.893 -172.20 505 0.941 -178.97 0.005 -1.05 1.085 ... OCR Scan
datasheet

8 pages,
319.09 Kb

TEXT
datasheet frame
Abstract: conforming to the IEEE 1394-1995 and 1394a-2000 standards. This single-chip IC integrates a 2-port cable PHY , , this IC can add and remove CIP and source packet headers automatically. The stream interface can , Ultra DMA 0-4 modes. A 5V tolerant cell is used to operate the IC as a 3.3V single power supply. C33 RISC CPU Equipped with Seiko Epson's original RISC CPU, this IC does not require an extra CPU. Rev.1.0 SEIKO EPSON CORPORATION S1R72902 S1R72902 External CPU interface This IC has 18 address lines, 16 data ... Seiko Epson
Original
datasheet

4 pages,
61.05 Kb

S400 DST2 dsio dclk ICD33 ide cable circuit diagram IEC61883 S100 S1R72902 S200 DST1 PF1318-02 Epson SuperFlash IEEE1394 S1R72902F00A TEXT
datasheet frame
Abstract: L C H A R A C T E R IS T IC S Characteristic Thermal Resistance, Junction-to-Case Symbol R0JC Max , °C unless otherwise noted) Characteristic (1) O FF C H A R A C T E R IS T IC S Drain-Source Breakdown , Current (VGS = 20 V, VDS = 0) O N C H A R A C T E R IS T IC S (1 ) Gate Threshold Voltage (VDS= 10 V, iD = , 2.0 A) D Y N A M IC C H A R A C T E R IS T IC S (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 , , VGS = 0, f = 1.0 MHz) F U N C T IO N A L C H A R A C T E R IS T IC S (Figure 8) (2) Common Source ... OCR Scan
datasheet

9 pages,
341.83 Kb

MRF177/D TEXT
datasheet frame
Abstract: IC (A) 0.5 f (MHz) 800 820 840 860 880 900 920 940 960 S11 |S11| 0.942 0.942 0.941 0.940 0.941 0.940 , and commercial equipment operating in the range of 800­960 MHz. · Specified for VCE = 24 Vdc, IC = 0.5 , Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power · Will Withstand RF Input , OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector­Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Collector­Base Breakdown Voltage (IC = 20 mA, IE = 0) Emitter­Base ... Motorola
Original
datasheet

6 pages,
88.82 Kb

MRF858S/D TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
! SIEMENS Small Signal Semiconductors ! BFR280 BFR280 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 3.5 V IC = 0.25 mA ! Common Emitter S-Parameters 0.941 169.7 0.0323 83.7 0.9961 -4.4 0.250 0.9817 -10.0 0.939 167.2 0.0406 81.8 0.9963 0.1073 68.4 0.9716 -15.1 0.800 0.9227 -32.5 0.941 139.7 0.1209 65.3 0.9642 -17.2 0.900 0.941 109.5 0.1910 47.0 0.8930 -30.7 1.600 0.7535 -65.2 0.935 105.0 0.1983 45.0 0.8818
/datasheets/files/infineon/ehdata/spar/bfr280/r23v5m25.s2p
Infineon 24/11/1997 2.78 Kb S2P r23v5m25.s2p
! SIEMENS Small Signal Semiconductors ! BFP280W BFP280W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 6 V IC = 0.25 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz -2.1 0.941 177.1 0.0077 90.8 0.9978 -1.3 0.100 0.9880 -3.8 0.933 175.7 0.0144 88.2 -6.0 0.300 0.9801 -11.3 0.953 165.9 0.0438 81.0 0.9957 -7.2 0.400 0.9773 -15.3 0.941
/datasheets/files/infineon/ehdata/spar/bfp280w/x26v0m25.s2p
Infineon 19/08/1996 2.78 Kb S2P x26v0m25.s2p
! SIEMENS Small Signal Semiconductors ! BFP180 BFP180 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 6 V IC = 0.25 mA ! Common Emitter S-Parameters: March 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 0.1892 46.7 0.9162 -40.9 2.400 0.7751 -52.2 0.941 97.9 0.2045 43.2 0.9028 -44.5 2.600 0.7798 -74.9 4.500 0.3423 -114.4 0.941 31.7 0.3313 1.4 0.7422 -84.8 5.000 0.2623 -136.3
/datasheets/files/infineon/ehdata/spar/bfp180/p16v0m25.s2p
Infineon 29/09/1997 2.78 Kb S2P p16v0m25.s2p
! SIEMENS Small Signal Semiconductors ! BFY405 BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1 V IC = 0.25 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 0.600 0.9870 -14.8 0.941 165.3 0.0248 80.2 0.9915 -9.4 0.700 0.9837 -17.0 0.944 162.8 0.0288 78.9 0.9885 -11.0 0.800 0.9789 -19.3 0.941 160.1 0.0328 76.2 0.9859 -12.6 0.900
/datasheets/files/infineon/ehdata/spar/bfy405/ay1v0m25.s2p
Infineon 02/10/1996 2.79 Kb S2P ay1v0m25.s2p
! SIEMENS Small Signal Semiconductors ! BFS480 BFS480 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 8 V IC = 0.25 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz -1.8 0.941 177.1 0.0075 85.7 0.9978 -0.9 0.100 0.9843 -3.9 0.934 176.0 0.0146 87.9 162.2 0.0583 78.4 0.9922 -7.7 0.500 0.9644 -19.9 0.941 156.7 0.0724 75.9 0.9883 -9.6
/datasheets/files/infineon/ehdata/spar/bfs480/s28v0m25.s2p
Infineon 19/08/1996 2.78 Kb S2P s28v0m25.s2p
! SIEMENS Small Signal Semiconductors ! BFS480 BFS480 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 5 V IC = 0.25 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz -2.0 0.947 177.3 0.0077 89.1 0.9990 -1.0 0.100 0.9893 -4.0 0.941 175.9 0.0155 86.1 162.1 0.0594 78.4 0.9910 -7.8 0.500 0.9635 -20.2 0.941 156.5 0.0740 75.7 0.9881 -9.7
/datasheets/files/infineon/ehdata/spar/bfs480/s25v0m25.s2p
Infineon 19/08/1996 2.78 Kb S2P s25v0m25.s2p
! SIEMENS Small Signal Semiconductors ! BFR280W BFR280W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 1.75 V IC = 0.25 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 0.9977 -2.5 0.150 0.9891 -6.7 0.941 171.1 0.0306 84.0 0.9970 -3.8 0.200 0.9870 -9.0 158.6 0.0791 76.2 0.9863 -10.1 0.500 0.9610 -22.2 0.941 152.3 0.0979 72.9 0.9819 -12.6
/datasheets/files/infineon/ehdata/spar/bfr280w/w21v7m25.s2p
Infineon 14/08/1996 2.78 Kb S2P w21v7m25.s2p
! SIEMENS Small Signal Semiconductors ! BFR280 BFR280 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 0.25 mA ! Common Emitter S-Parameters: May 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz -31.7 1.700 0.7454 -66.1 0.929 103.3 0.1996 44.6 0.8738 -33.3 1.800 0.7146 -70.5 0.941 2.000 0.6600 -79.3 0.941 90.6 0.2165 38.8 0.8451 -38.1 2.200 0.6154 -87.8 0.920 83.6
/datasheets/files/infineon/ehdata/spar/bfr280/r210vm25.s2p
Infineon 24/11/1997 2.78 Kb S2P r210vm25.s2p
! SIEMENS Small Signal Semiconductors ! BFR280W BFR280W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 3 V IC = 0.25 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 0.9969 -2.5 0.150 0.9839 -6.6 0.941 171.3 0.0295 84.3 0.9968 -3.8 0.200 0.9869 -8.6 -6.2 0.300 0.9822 -13.1 0.948 163.7 0.0579 80.3 0.9928 -7.4 0.400 0.9700 -17.4 0.941
/datasheets/files/infineon/ehdata/spar/bfr280w/w23v0m25.s2p
Infineon 14/08/1996 2.78 Kb S2P w23v0m25.s2p