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Part : DAC082S085CISD/NOPB Supplier : Texas Instruments Manufacturer : Avnet Stock : 5,000 Best Price : $0.8750 Price Each : $0.8861
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Part : ADC121S101CISD/NOPB Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 197 Best Price : $2.6070 Price Each : $3.53
Part : DAC082S085CISD/NOPB Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 950 Best Price : $0.9835 Price Each : $1.7270
Part : DAC104S085CISD/NOPB Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 1,000 Best Price : $2.8450 Price Each : $4.4940
Part : GISD-250 Supplier : Stancor Manufacturer : Chip1Stop Stock : 1 Best Price : $128.00 Price Each : $128.00
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Part : CDL4U(I.S)/DB Supplier : Altech Manufacturer : Master Electronics Stock : 100 Best Price : $1.40 Price Each : $1.98
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Part : GISD-1000 Supplier : Stancor Manufacturer : Master Electronics Stock : 36 Best Price : $216.30 Price Each : $302.82
Part : GISD-150 Supplier : Stancor Manufacturer : Master Electronics Stock : 83 Best Price : $85.92 Price Each : $106.48
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Part : ARJ14A-MISD-MU2 Supplier : Abracon Manufacturer : Sager Stock : - Best Price : $5.46 Price Each : $6.10
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Part : TRI-SDI-PHY-E5-U Supplier : Lattice Semiconductor Manufacturer : Symmetry Electronics Stock : - Best Price : $2,123.9399 Price Each : $2,123.9399
Part : TRI-SDI-PHY-E5-UT Supplier : Lattice Semiconductor Manufacturer : Symmetry Electronics Stock : - Best Price : $6,371.8301 Price Each : $6,371.8301
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i/SD2932

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features I Gold metallization I Excellent thermal stability I Common source configuration, push-pull I POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS field-effect RF power , . Device summary Order code Marking Base qty. Package Packaging SD2932W SD2932(1 , specifications. January 2012 Doc ID 6876 Rev 9 1/23 www.st.com 23 Contents SD2932 Contents STMicroelectronics
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Abstract: SD2932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features Gold metallization , dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS field-effect RF , 2. Gate Table 1. Device summary Order code Marking Package Packaging SD2932 SD2932 M244 Tube March 2010 Doc ID 6876 Rev 8 1/22 www.st.com 22 Contents SD2932 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . STMicroelectronics
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inductor vk200 10A ferrite bead 25 ohm semirigid vk200 ferrite bead ZENER MARKING C8 ST variable resistor 4.7 k ohms
Abstract: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features Gold metallization Excellent , Description The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use , 1 3 2 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Marking SD2932(1 , www.st.com 23 Contents SD2932 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . 22 2/23 Doc ID 6876 Rev 9 SD2932 Electrical data 1 STMicroelectronics
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CAPACITOR 64 680 4J neosid RG316-25 diode t25 4 L5
Abstract: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT , MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. M244 epoxy sealed ORDER CODE SD2932 BRANDING SD2932 PIN CONNECTION 1 1 3 3 2 2 1. Drain 2 , 2002 1/12 SD2932 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC (Per Section) Symbol Test STMicroelectronics
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diode Zener t25 4 c5 diode gp 434 200B variable trimmer T20 56 diode ST40 1020876B
Abstract: SD2932 ® RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA , MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 250 MHz M244 epoxy sealed ORDER CODE BRANDING SD2932 TSD2932 PIN CONNECTION 1. Drain 2 , /13 SD2932 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (per section) Parameter Min. V STMicroelectronics
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MARCON NH capacitor marcon capacitor nc Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k rs-2b resistor
Abstract: SD2932 RF power transistors HF/VHF/UHF n-channel MOSFETs Features Gold metallization , dB gain @ 175 MHz Description The SD2932 is a gold metallized n-channel MOS field-effect RF , 2. Gate Table 1. Device summary Order code Marking Package Packaging SD2932 SD2932 M244 Tube November 2009 Doc ID 6876 Rev 7 1/21 www.st.com 21 Contents SD2932 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . STMicroelectronics
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700B RG316 SD2932 reference
Abstract: ® SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA s s s s GOLD , GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 230 MHz M244 epoxy sealed ORDER CODE BRANDING SD2932 TSD2932 PIN CONNECTION 1. Drain 2. Gate ABSOLUTE MAXIMUM RATINGS , compound applied (Dow Corning 340 or equivalent). November 1999 1/4 SD2932 ELECTRICAL STMicroelectronics
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Abstract: Gl. SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA . GOLD , dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 230 MHz M244 epoxy sealed ORDER CODE BRANDING SD2932 TSD2932 PIN CONNECTION 2 2 pc12170 1. Drain 3. Source 2. Gate , thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/4 SD2932 ELECTRICAL -
OCR Scan
Dow Corning 340 dow 407
Abstract: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT THERMAL , DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. M244 epoxy sealed ORDER CODE SD2932 BRANDING SD2932 PIN CONNECTION 1 1 3 2 1. Drain 2. Gate 2 3 3. Source ABSOLUTE MAXIMUM , SD2932 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q STMicroelectronics
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7163911B
Abstract: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT , MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. M244 epoxy sealed ORDER CODE SD2932 BRANDING SD2932 PIN CONNECTION 1 1 3 3 2 2 1. Drain 2 , applied (Dow Corning 340 or equivalent). October 2000 1/12 SD2932 ELECTRICAL SPECIFICATION STMicroelectronics
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850 ohm potentiometer VK200 INDUCTOR 220 k ohm potentiometer vk200.10
Abstract: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT , MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. M244 epoxy sealed ORDER CODE SD2932 BRANDING SD2932 PIN CONNECTION 1 1 3 3 2 2 1. Drain 2 , /12 SD2932 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol Test Conditions Min STMicroelectronics
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4 carbon wire resistor ceramic capacitor 4.7 mf 50v resistance 220 ohm DIODE T25 4 c8 diode L2.70 ceramic axial capacitors
Abstract: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT , MHz M244 epoxy sealed DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 , Order Codes Marking Package Packaging SD2932 SD2932 M244 Plastic Tray ABSOLUTE , DATA Rth(j-c) Junction -Case Thermal Resistance REV. 5 July 2004 1/12 SD2932 ELECTRICAL STMicroelectronics
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T20 88 DIODE diode Zener t25 4 c8 MF variable CAPACITOR 50v Fair-Rite ATC T20 C6 F semirigid
Abstract: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features I Excellent thermal stability I Frequency: 87.5 - 108 MHz I Supply voltage: 48 V I Output power: 650 W min. I Gain: 19.5 dB min. I Efficiency: 73 % min. I Harmonics < - 36 dBc I Gain flatness: ± 0.5 dB max AM01227v1 Table 1 , transmitters over the band 87.5 to 108 MHz using 2 x SD2932 gold metallized N-channel MOS fieldeffect STMicroelectronics
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M177 AM01227
Abstract: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel , transmitters over the band 87.5 to 108 MHz using 2 x SD2932 gold metallized N-channel MOS fieldeffect , 6 SD2932 mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6.1 , IDC connector piuout Doc ID 17347 Rev 1 STEVAL-TDR009V1 SD2932 mounting recommendations 6 SD2932 mounting recommendations 6.1 Mounting recommendations Minimum depth of tapped holes STMicroelectronics
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2L TRANSISTOR Ni100
Abstract: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel , transmitters over the band 87.5 to 108 MHz using 2 x SD2932 gold metallized N-channel MOS fieldeffect , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 SD2932 , Acknowledge pin alarm + 5 V Figure 5. 8/13 IDC connector piuout STEVAL-TDR009V1 SD2932 mounting recommendations 6 SD2932 mounting recommendations 6.1 Mounting recommendations STMicroelectronics
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Cu Alloy 42 CuMoCu NI 100 NI42
Abstract: Devices: SD2932 or equivalent · Connectorized version available Dimensions (L x W x H): 410 x 200 x , Driver Inhibit + 48Vs1 I/O Connector (see p. 3 for pins detail) + 28Vs2 Solder Pad Base , poles of Vs1 and Vs2 3 x M4 holes 6 x M4 holes 8 x M3 holes Dimensions in mm. I/O CONNECTOR RES Ingenium
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GR00239 RF POWER Mosfet SD2932 ntc k45 B57045K0103K B57045K0103K000 EPCOS ntc k45
Abstract: Devices: SD2932 or equivalent · Connectorized version available Dimensions (L x W x H): 410 x 200 x , Driver Inhibit + 48Vs1 I/O Connector (see p. 3 for pins detail) + 28Vs2 Solder Pad Base , and Vs2 3 x M4 holes 6 x M4 holes 8 x M3 holes Dimensions in mm. I/O CONNECTOR PINS RES Ingenium
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ntc 10 epcos RES Ingenium
Abstract: offers 25% lower R ds(ON) than industry standard and 20% higher power saturation than ST SD2932. These , 1.100 H 33.91 34.16 1.335 1.345 I 0.10 0.15 0.004 0.006 J 1.52 STMicroelectronics
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SD2942 SD2942 equivalent Fair-Rite bead 175MH
Abstract: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 PD57030S , SD2904 SD2918 SD2931 SD2931-10 SD2932 SD2933 400 400 400 400 30 175 175 175 30 5 15 , Description VCC I CQ V mA Features NPN Si RF Transistor High Power Amplifier 3.6 5 P1dB STMicroelectronics
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SD57045 SO42 STM 160-30 PD55003 equivalent transistor M122 SO-10RF PD57045S PD57060S TV/900 SD57030 SD57030-01
Abstract: offers 25% lower R ds(ON) than industry standard and 20% higher power saturation than ST SD2932. These , 1.100 H 33.91 34.16 1.335 1.345 I 0.10 0.15 0.004 0.006 J 1.52 STMicroelectronics
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