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i/SD2932

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features I Gold metallization I Excellent thermal stability I Common source configuration, push-pull I POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS field-effect RF power , . Device summary Order code Marking Base qty. Package Packaging SD2932W SD2932(1 , specifications. January 2012 Doc ID 6876 Rev 9 1/23 www.st.com 23 Contents SD2932 Contents STMicroelectronics
Original

inductor vk200

Abstract: 10A ferrite bead SD2932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features Gold metallization , dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS field-effect RF , 2. Gate Table 1. Device summary Order code Marking Package Packaging SD2932 SD2932 M244 Tube March 2010 Doc ID 6876 Rev 8 1/22 www.st.com 22 Contents SD2932 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
STMicroelectronics
Original
inductor vk200 10A ferrite bead 25 ohm semirigid vk200 ferrite bead ZENER MARKING C8 ST ceramic capacitor 4.7 mf 50v

ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features Gold metallization Excellent , Description The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use , 1 3 2 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Marking SD2932(1 , www.st.com 23 Contents SD2932 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . 22 2/23 Doc ID 6876 Rev 9 SD2932 Electrical data 1
STMicroelectronics
Original
CAPACITOR 64 680 4J neosid RG316-25 diode t25 4 L5

diode Zener t25 4 c5

Abstract: diode gp 434 SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT , MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. M244 epoxy sealed ORDER CODE SD2932 BRANDING SD2932 PIN CONNECTION 1 1 3 3 2 2 1. Drain 2 , 2002 1/12 SD2932 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC (Per Section) Symbol Test
STMicroelectronics
Original
diode Zener t25 4 c5 diode gp 434 RESISTOR 47 K OHM T20 56 diode VK200 INDUCTOR 200B 1020876B

RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

Abstract: MARCON NH capacitor SD2932 ® RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA , MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 250 MHz M244 epoxy sealed ORDER CODE BRANDING SD2932 TSD2932 PIN CONNECTION 1. Drain 2 , /13 SD2932 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (per section) Parameter Min. V
STMicroelectronics
Original
RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz MARCON NH capacitor marcon capacitor nc Variable resistor 10K ohm neosid* 10k resistor 4.7k ohm

SD2932

Abstract: ST40 SD2932 RF power transistors HF/VHF/UHF n-channel MOSFETs Features Gold metallization , dB gain @ 175 MHz Description The SD2932 is a gold metallized n-channel MOS field-effect RF , 2. Gate Table 1. Device summary Order code Marking Package Packaging SD2932 SD2932 M244 Tube November 2009 Doc ID 6876 Rev 7 1/21 www.st.com 21 Contents SD2932 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
STMicroelectronics
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ST40 SD2932 reference 700B RG316
Abstract: ® SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA s s s s GOLD , GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 230 MHz M244 epoxy sealed ORDER CODE BRANDING SD2932 TSD2932 PIN CONNECTION 1. Drain 2. Gate ABSOLUTE MAXIMUM RATINGS , compound applied (Dow Corning 340 or equivalent). November 1999 1/4 SD2932 ELECTRICAL STMicroelectronics
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Dow Corning 340

Abstract: SD2932 Gl. SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA . GOLD , dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 230 MHz M244 epoxy sealed ORDER CODE BRANDING SD2932 TSD2932 PIN CONNECTION 2 2 pc12170 1. Drain 3. Source 2. Gate , thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/4 SD2932 ELECTRICAL
-
OCR Scan
Dow Corning 340 dow 407

NEOSId

Abstract: RG316-25 SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT THERMAL , DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. M244 epoxy sealed ORDER CODE SD2932 BRANDING SD2932 PIN CONNECTION 1 1 3 2 1. Drain 2. Gate 2 3 3. Source ABSOLUTE MAXIMUM , SD2932 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q
STMicroelectronics
Original
7163911B

RG316-25

Abstract: 25 ohm semirigid SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT , MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. M244 epoxy sealed ORDER CODE SD2932 BRANDING SD2932 PIN CONNECTION 1 1 3 3 2 2 1. Drain 2 , applied (Dow Corning 340 or equivalent). October 2000 1/12 SD2932 ELECTRICAL SPECIFICATION
STMicroelectronics
Original
850 ohm potentiometer 220 k ohm potentiometer vk200.10

diode t25 4 L5

Abstract: 4 carbon wire resistor SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT , MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. M244 epoxy sealed ORDER CODE SD2932 BRANDING SD2932 PIN CONNECTION 1 1 3 3 2 2 1. Drain 2 , /12 SD2932 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol Test Conditions Min
STMicroelectronics
Original
4 carbon wire resistor variable resistor 4.7 k ohms diode L2.70 resistance 220 ohm DIODE T25 4 c8 220 k ohm resistor

RG316-25

Abstract: diode Zener t25 4 c8 SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs · GOLD METALLIZATION · EXCELLENT , MHz M244 epoxy sealed DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 , Order Codes Marking Package Packaging SD2932 SD2932 M244 Plastic Tray ABSOLUTE , DATA Rth(j-c) Junction -Case Thermal Resistance REV. 5 July 2004 1/12 SD2932 ELECTRICAL
STMicroelectronics
Original
diode Zener t25 4 c8 T20 88 DIODE Fair-Rite ATC MF variable CAPACITOR 50v RESISTOR AXIAL Zener Diode Glass 50v

M177

Abstract: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features I Excellent thermal stability I Frequency: 87.5 - 108 MHz I Supply voltage: 48 V I Output power: 650 W min. I Gain: 19.5 dB min. I Efficiency: 73 % min. I Harmonics < - 36 dBc I Gain flatness: ± 0.5 dB max AM01227v1 Table 1 , transmitters over the band 87.5 to 108 MHz using 2 x SD2932 gold metallized N-channel MOS fieldeffect
STMicroelectronics
Original
M177 AM01227

"RF Power Amplifier"

Abstract: 2L TRANSISTOR STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel , transmitters over the band 87.5 to 108 MHz using 2 x SD2932 gold metallized N-channel MOS fieldeffect , 6 SD2932 mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6.1 , IDC connector piuout Doc ID 17347 Rev 1 STEVAL-TDR009V1 SD2932 mounting recommendations 6 SD2932 mounting recommendations 6.1 Mounting recommendations Minimum depth of tapped holes
STMicroelectronics
Original
2L TRANSISTOR Ni100

SD2932

Abstract: CuMoCu STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel , transmitters over the band 87.5 to 108 MHz using 2 x SD2932 gold metallized N-channel MOS fieldeffect , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 SD2932 , Acknowledge pin alarm + 5 V Figure 5. 8/13 IDC connector piuout STEVAL-TDR009V1 SD2932 mounting recommendations 6 SD2932 mounting recommendations 6.1 Mounting recommendations
STMicroelectronics
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CuMoCu Cu Alloy 42 NI42 NI 100

RF POWER Mosfet SD2932

Abstract: GR00239 Devices: SD2932 or equivalent · Connectorized version available Dimensions (L x W x H): 410 x 200 x , Driver Inhibit + 48Vs1 I/O Connector (see p. 3 for pins detail) + 28Vs2 Solder Pad Base , poles of Vs1 and Vs2 3 x M4 holes 6 x M4 holes 8 x M3 holes Dimensions in mm. I/O CONNECTOR
RES Ingenium
Original
GR00239 RF POWER Mosfet SD2932 ntc k45 B57045K0103K B57045K0103K000 ntc 10 epcos

RF POWER Mosfet SD2932

Abstract: GR00239 Devices: SD2932 or equivalent · Connectorized version available Dimensions (L x W x H): 410 x 200 x , Driver Inhibit + 48Vs1 I/O Connector (see p. 3 for pins detail) + 28Vs2 Solder Pad Base , and Vs2 3 x M4 holes 6 x M4 holes 8 x M3 holes Dimensions in mm. I/O CONNECTOR PINS
RES Ingenium
Original
RES Ingenium EPCOS ntc k45

RG316-25

Abstract: SD2942 offers 25% lower R ds(ON) than industry standard and 20% higher power saturation than ST SD2932. These , 1.100 H 33.91 34.16 1.335 1.345 I 0.10 0.15 0.004 0.006 J 1.52
STMicroelectronics
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SD2942 SD2942 equivalent Fair-Rite bead variable trimmer 175MH

SO42

Abstract: STM 160-30 RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 PD57030S , SD2904 SD2918 SD2931 SD2931-10 SD2932 SD2933 400 400 400 400 30 175 175 175 30 5 15 , Description VCC I CQ V mA Features NPN Si RF Transistor High Power Amplifier 3.6 5 P1dB
STMicroelectronics
Original
SD57045 SO42 STM 160-30 PD55003 equivalent linear amplifier 470-860 SO-10RF PD57045S PD57060S TV/900 SD57030 SD57030-01

SD2942

Abstract: RG316-25 offers 25% lower R ds(ON) than industry standard and 20% higher power saturation than ST SD2932. These , 1.100 H 33.91 34.16 1.335 1.345 I 0.10 0.15 0.004 0.006 J 1.52
STMicroelectronics
Original
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