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Part Manufacturer Description Datasheet BUY
UCD74120RVFR Texas Instruments High-Current, Synchronous Buck Power Stage 40-LQFN-CLIP -40 to 125 visit Texas Instruments
THS4120CDGN Texas Instruments 3.3 V, 100 MHz, 43 V/us, Fully Differential CMOS Amplifier w/Shutdown 8-MSOP-PowerPAD 0 to 70 visit Texas Instruments
THS4120IDGKR Texas Instruments OP-AMP, 9000uV OFFSET-MAX, PDSO8, GREEN, PLASTIC, MSOP-8 visit Texas Instruments
TLV4120IDGNRG4 Texas Instruments OP-AMP, 4000uV OFFSET-MAX, 2.4MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, MSOP-8 visit Texas Instruments
PTEA404120P2AD Texas Instruments 1-OUTPUT 50W DC-DC REG PWR SUPPLY MODULE, ROHS COMPLIANT, DIP-8 visit Texas Instruments

hr 4120

Catalog Datasheet MFG & Type PDF Document Tags

hr 4120

Abstract: 4-120S ILA B IL ITY PART N U M BER RHRD4120 RH RD 4120S PACKAGE TO-251 TO -252 BR AN D HR 4120 HR 4120 , +25°C, Unless O therw ise Specified R H R D 4120 R H R D 4120S U N ITS V V V A A A W mj °C Peak , , Unless O therw ise Specified RH R D 4120, R H R D 4120S SYMBOL v F TE S T CO N D ITIO N l F =
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hr 4120 4-120S RHRD4120S TA49056 4120S9A

hr 4120

Abstract: HR4120 RHRD4120, RHRD4120S Data Sheet January 2000 File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics (trr < 60ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. · Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .
Fairchild Semiconductor
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HR4120 RHRD4120S9A hr 4120 diode

MTN4123-AHR

Abstract: hr 4120 8.40 20mA 4.20 20mA 100 5V 6.80 10mA 2 MTN4123-AHR 635 GaAsP HR , MTN4123-AO 635 GaAsP HR White Grey 30 5.00 85.00 8.40 20mA 4.20 20mA 100 5V 7.80 10mA 1 MTN4123-CHR 635 GaAsP HR Red Red 30 5.00 , HR White Grey 30 5.00 85.00 8.40 20mA 4.20 20mA 100 5V 7.80 , 3.40 20mA 100 4V 41.20 20mA 1 MTN7123M-41C 660 GaAlAs UR Red Black
Marktech Optoelectronics
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MTN2123-AG MTN2123-CG MTN4123-CO MTN7123M-41A
Abstract: 8.40 20mA 4.20 20mA 100 5V 6.80 10mA 2 MTN4123â'AHR 635 GaAsP HR , MTN4123â'AO 635 GaAsP HR White Grey 30 5.00 85.00 8.40 20mA 4.20 20mA 100 5V 7.80 10mA 1 MTN4123â'CHR 635 GaAsP HR Red Red 30 5.00 , HR White Grey 30 5.00 85.00 8.40 20mA 4.20 20mA 100 5V 7.80 , 20mA 3.40 20mA 100 4V 41.20 20mA 1 MTN7123Mâ'41C 660 GaAlAs UR Red Marktech Optoelectronics
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MTN2123
Abstract: 8.40 20mA 4.20 20mA 100 5V 6.80 10mA 2 MTN4123â'AHR 635 GaAsP HR , MTN4123â'AO 635 GaAsP HR White Grey 30 5.00 85.00 8.40 20mA 4.20 20mA 100 5V 7.80 10mA 1 MTN4123â'CHR 635 GaAsP HR Red Red 30 5.00 , HR White Grey 30 5.00 85.00 8.40 20mA 4.20 20mA 100 5V 7.80 , 20mA 3.40 20mA 100 4V 41.20 20mA 1 MTN7123Mâ'41C 660 GaAlAs UR Red Marktech Optoelectronics
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Abstract: Mode 21.00 21.00 10,000 1.725 3.960 24.00 24.00 A A µF VDC VDC 1.950 4.120 350 Circuit Stress Method TA = +25° Unmodified Database 1,000,000 30 KHz Hr g PCB Temperature PCBTemperature , 2.160 3.960 24.00 24.00 A A µF VDC VDC 2.520 4.120 350 Circuit Stress Method TA = +25° Unmodified Database 1,000,000 30 KHz Hr g PCB Temperature PCBTemperature PCB Temperature -40 -55 C&D Technologies
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WPA60R EN60950 WPA60R48D315 WPA60R48D318 WPA6048D

ST200-474

Abstract: TMCX165 3.610 91.69 3.810 96.77 3.965 100.71 4.120 104.65 .650 16.51 .760 19.30 .885 22.48 .985 25.02 , 2.190 2.360 2.470 2.610 2.630 2.800 2.960 2.970 3.110 3.270 3.430 3.590 3.750 3.920 4.120 , UL-1685 (UL-1581) Vertical Tray Ribbon gas burner 70,000 BTU/hr horizontal 3 from samples , flanges 1/2 cable diameter Vertical Tray Ribbon gas burner 70,000 BTU/hr 20° up from horizontal , diameter Vertical Tray Ribbon gas burner 70,000 BTU/hr horizontal 3 from samples 18 above tray
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ST050-466 ST075-467 ST200-474 ST350-483 ST400-484 TMCX165 UL1685 XHHW-2 ST050-462 ST050-464 ST050-465 ST075-468

30218

Abstract: HR HR HR DG NS HR HR HM HM K L M !8* N P R S T $ D D ADDDD PDR RDV DC -13 , 124.46 [4.900] 99 . 06 [3.900] 73 . 66 [2.900] 104.65 [4.120] [4.300] 83 . 82 [3.300] 50 . 8
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30218 0G3C-101-00 0G3C-233-01 02-OCT-01

split tran st-4-20

Abstract: . 24 Hr. PRONTO Delivery * 16 DST DST DST DST DST DST 2-16 3-16 4-16 5-16 6-16 , 6 Size S E C O N D A R Y R M S R A T IN G D u a l 115 /23 0V 8 Pin 2-120 3-120 4-120 5-120 6-120 7-120 DST DST DST DST DST DST 2-120 3-120 4-120 5-120 6-120 7-120 5V
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split tran st-4-20

rgn 1064

Abstract: vergleichsliste 072 D 062 064 W W . H H A 406 410 406 407 S 408 HR 406 HR 410 G 407 . LA 199* AR 23 , ] G 408 · LP 2 r . ·. S 210 S 410 L 190 P P 430 AG 4100 AL 495 AG 495 AR 4120 AS 4100 . · . , 4100 NDS 42 4120 NC 4 A 4125 -NVS 42 4101 NS 4* 4106 LAS 324 NVS 43 4120 4101 P 43 4130 NP 43 495 * 4100 494 4101 NDG 4 · MV QV QF SB SV MV ST MT TK TV TK 4100 4100 4100 4110 4110 4110 4110 4120 4120 4110 4110 H H B S S S S /P P 2025 N 2026 N 430 N 43a N 415 N 4 3 5 .N 434 N 440 N 435 '
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rgn 1064 vergleichsliste mo465 telefunken hr 660 TK4100 RGN2004 LL416

MH12544

Abstract: XE16 Specifications Nominal Capacity (Ah) Nominal Dimensions Nominal Voltage (V) 10 hr rate to 1.67Vpc @ , 7.0 XE16 857.0 546.0 412.0 247.0 143.0 36.0 24.0 19.0 10.0 XE30
EnerSys
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MH12544 US-XE-RS-004 XE16 XE30-12 XE30 enersys

1525I

Abstract: MCP1541 ) 4.140 4.130 4.120 4.110 4.100 4.090 4.080 4.070 4.060 4.050 4.040 100 VDD MCP1525 , 27 50 ppm/°C TA = -40°C 85°C 1 VOUT 2 ppm/hr 125°C 1008 1-1 , Temperature (°C) 4.140 4.130 4.120 4.110 4.100 4.090 4.080 4.070 4.060 4.050 4.040 100 Line , Average -3 0 200 400 600 Time (hr) 800 - 2-9 MCP1525 DS21653B_CN 6 2.4995
Microchip Technology
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MCP1541 1525I MCP3201 MCP6021 MCP606 VA25 MCP1525/41 5VMCP1541

PPS 3013

Abstract: 744-772-470 ) STAGGERED DIP SOLDER (HH) SURFACE MOUNT (HF) CARD EXTENDER (HR) P.C.B. LAYOUTS .039[1.00] Ø , Threaded Insert TERMINATION TYPE (Opposite Page) HH = Staggered Dip Solder HR = Card Extender HF = , 27.20 28.20 29.20 30.20 31.20 32.20 33.20 34.20 35.20 36.20 37.20 38.20 39.20 40.20 41.20
Sullins Electronics
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PPS 3013 744-772-470 amp 7313 2279D RZE40DHHD

TP Transistors

Abstract: , le. UES2604R. U 1 4/79 (Rev, 1) 4-120 UNITRODE UNITRODE CORP ^2 dËT| ^ 347^(33 0 , recommended. OPTIONAL HIGH RELIABILITY (HR) SCREENING The following tests are performed on 100% of the
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TP Transistors UES2604 UES2605 UES2606 UES2604HR UES2605HR UES2606HR
Abstract: +J250 / Hr 1 \ S . \ \ \\ \ » \ / \ . \ \ 0 3.7 Ï I I 'A Z , S21 S12 MAG ANG MAG ANG MAG ANG 3500 .391 -65.6 4.120 63.1 .035 3600 -
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FLM3742-25DA
Abstract: 0 .0 0 (2.362) DIM. 'G' 3 7 .0 0 (1.458) 41.20 (1.623) 45.40 (1.788) 4 9 .6 0 (1.953) DIM , IO N HR I BAR CHECKED BY 01/07/17 " BÄTE- L tfN Ul < 3 Q. 2 0 l f l v= ° B ^ S sI -
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16-OOIO SD-44516-005

KBC 1021

Abstract: Commands Seek Command Sense Drive Status Command Sense Interrupt Command 4.1.19 Set Track Command 4.1.20 , Identification Register (HR) 6.7 Interrupt Enable Register (IER) 6.8 MODEM Control Register (MCR) $.9 MODEM
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KBC 1021 PC87306

varta v 60 r

Abstract: Li-ion rechargeable coin battery robust85C V 65 HT V 110 HT* V 150 HT V.HR powerful V 6 HR RTC 6 MBU 20 V 450 HR V 600 HR V 18 HRT V 500 H , 4120 1.5 16.500 34.0 61.0 141 4114 1.5 7.800 26.0 50.0 69 4106 1.5 2.600 14.5 50.5 23 4103 1.5 1.200 , CoinPower Li-Ion & Li-Polymer Batteries Cylindrical & Prismatic & CellPac LITE NiMH Button Cells (V.H / HR
VARTA
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varta v 60 r Li-ion rechargeable coin battery varta li-ion 18650 battery varta aa 18650 li-ion cell 18650 battery 11F-4
Abstract: suffix â'R â' ie. UES2604R. 4/79 (Rev. 1) 4-120 m U N IT R O D E UES2604 UES2605 , recom m ended. OPTIONAL HIGH RELIABILITY (HR) SCREENING The following tests are performed on 100% of -
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MIL-STD-750

hr 4120 diode

Abstract: 75637S ) * 1 1 r 1 IT 1 " I " HR *0 T r 1 - TTTTT.- 1 -1 - TTTTTT < z Ui uW 1 1R *0 , JUNCTION TEMPERATURE 4-120 in te r d i HUF75637P3, HUF7S637S3S Typical Performance Curves
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75637P 75637S HUF75637S3S HUF75637S3ST AN9321 AN9322
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