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hmf 25/100/21

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Abstract: Record On-Wafer DC Probe Data Allows DC Selection Without Re-probing HMF-06100 chips are 100% DC , 5.0 17.0 20.0 9.0 12.5 6.0 19.5 19.5 21.5 23.5 23.5 10.0 4.5 MAX HMF-06100-100 MAG p Maximum , dBm dB dB 10.0 MAG P 1dB ®1dB MAG HMF-06100-200 p 5.0 dBm dBm dB MAG ®1dB , N D U C T O R 4bE D 43022^ DDDDlb? b HNS HMF-06100-100, -200 T-31- T-31- 25 , for Source Control Drawings Description The HMF-06100 is a 600 nm n-channel MESFET with 0.5 |im gate ... OCR Scan
datasheet

4 pages,
226.97 Kb

HMF06100 HMF-06100 TEXT
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Abstract: VDS = 3 0 V ' VGS = 0 0 V MIN HMF-06100-100 HMF-06100-200 80 100 TYP 130 150 MAX 180 200 Vp(V) Vds = , Electrical Test and Screening Available for Source Control Drawings Description The HMF-06100 is a 600 , dielectric/scratch protection on the HMF-06100 contribute to high assembly yields. Stan dard shipping containers are anti-static Gel-Paks, sealed in metallized bags lor additional ESD protection. HMF-06100 chips are 100% DC tested and visually inspected. Typical RF performance and minimum limits are based on ... OCR Scan
datasheet

4 pages,
228.8 Kb

HMF06100 "Harris microwave" TEXT
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Abstract: MW SEMICONDUCTOR - 97D 00027 PRODUCT DATA HMF-0600 POWER GaAs FET D T ' 3 / *«55 , efficiency HMF-0600 Gallium Arsenide Microwave Power Field Effect Transistor Chip has been specifically , low power consumption and high'reliability are major considérations. To achieve the HMF , gold bonding pads and silicon nitride scratch protection make the HMF-0600 a high yield contributor , applications, the HMF-0600 Is one member of the Harris Microwave Semiconductor Power GaAs FET Product Line and ... OCR Scan
datasheet

2 pages,
349.92 Kb

transistor b 1138 906000 HMF0600 HMF-0600 TEXT
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Abstract: anti-static Gel-Paks, sealed in metallized bags for additional ESD protection. HMF-03100 chips are 100% DC , specifications tor the HMF-03100 include three DC/RF performance ranges, indicated by Selection Codes -100, -200 , E M I C O N D U C T O R HbE D 4302£bt i 00Q01S4 00Q01S4 T -3 ]-2 5 A «HMS HMF-03100 -100 , Gain. DC Electrical Specifications at TA = 25*C PART NO. lDSs(mA) Vds = 3.0V ,V gs = 0 V MIN HMF-03100-100 HMF-03100-200 HMF-03100-300 NOTE Vp(V) VDS = 3 0 V ' lD S =,0 m A MIN -3.1 -3.1 -3.1 TYP -2.1 -2.1 ... OCR Scan
datasheet

4 pages,
260.2 Kb

TEXT
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Abstract: specified by Source Control Drawing, the HMF-06310 can be supplied with 100% screening and Quality , RR IS MU S E M I C O N D U C T O R MbE D HMF-06310 M B O S ^ b T 0 0 0 0 21 0 f i «HMS , Reliability Description The HMF-06310 is a packaged version of the HMF06300 HMF06300. The chip is a 600 nm , process. The HMF-06300 ac tive layer is formed by ion implantation. Ti/Pt/Au gate metallization and large , chip. Eutectic die attach, thermocompression wedge bonding with gold wire, and a 100 mil hermetically ... OCR Scan
datasheet

3 pages,
152.29 Kb

TEXT
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Abstract: metallized bags for additional ESD protection. HMF-06300 chips are 100% DC tested and visually inspected , M G K HMF-06300 RF Electrical Specifications TÂ= 25°C(VD S= 4.0 V, lD S= 40 mA) SYMBOL MAG , Applications * Custom Electrical Test and Screening Available for Source Control Drawings HMF-06300 Gain , Without Re-probing Description The HMF-06300 is a 600 nm n-channel MESFET with 0.5 nm gate length , wafer-to-wafer repeatability. Large gold bond pads and silicon nitride dielectric/scratch protection on the HMF ... OCR Scan
datasheet

3 pages,
188.58 Kb

HMF06300 TEXT
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Abstract: metallized bags for additional ESD protection. HMF-03100 chips are 100% DC tested and visually inspected , 85 MAX 110 100 110 Vds = 3 ° V . ' d s = 1.0 mA MIN -3.1 -3.1 -3.1 TYP -2.1 -2.1 -2.1 MAX -1 .0 -1 , 7 R b 4 1 4 2 0 0 1 1 02 4 b7T ISMGK HMF-03100 -100, -200, -300 Product Ratings SYMBOL , Features · +15, +19 and +21 dBm Output Power Selections Available · 7 dB MAG with +14 dBm Associated , Control Drawings Description The HMF-03100 is a 300 jim n-channel MESFET with 0.5 urn gate length ... OCR Scan
datasheet

4 pages,
257.61 Kb

samsung 943 HMF03100 HMF-03100-300 HMF-03100-100 HMF-03100 TEXT
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Abstract: TTbMlMS DD11672 DD11672 322 « S M G K HMF-06140-200 RF Electrical Specifications at TA= 25°C(Vns = 6.0 V, lD S , UNITS mA V mS MIN 100 -3.1 TYP 150 -2.1 85 MAX 200 -1.0 Product Ratings SYMBOL PARAMETER MAXIMUM , S ) c/f CM FREQ (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 S 11 S 21 , * Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Description The HMF , length, utilizing Harris Microwave's gain optimized G10 process. The HMF-06100-200 ac tive layer is ... OCR Scan
datasheet

3 pages,
179.27 Kb

VP 1176 HMF06100-200 HMF-06100-200 TEXT
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Abstract: gold wire, and a 100 mil hermetically sealed metal/ceramic package make the HMF-03020 suitable tor the , Durability and Reliability HMF-03020 Power Optimized GaAs FET 2-14 GHz * Chip Devices are Selected from , Electrical Test and Screening Available for Source Control Drawings Description The HMF-03020 is a , , utilizing Harris Microwave's power optimized P5 process. The HMF-03000 active layer is formed by ion , wafers, using 100% on-wafer probe data. The assembly process includes pre-cap visual inspec tion and 100 ... OCR Scan
datasheet

3 pages,
155.65 Kb

HMF0302 hmf-0302 TEXT
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Abstract: protection. HMF-12100 chips are 100% DC tested and visually inspected. Typical RF performance and minimum , Description The HMF-12100 is a 1200 um n-channel MESFET with 0.5 |xm gale length, utilizing Harris Microwave , silicon nitride dielectric/scratch protection on the HMF-12100 contribute to high assembly yields. Stan , . The HMF-12100 is available in Military, Space/Military andCommercial , SAMSUNG ELECTRONICS IN C bG E D 7^4142 0011044 4bfl H S H 6 K HMF-12100 RF ... OCR Scan
datasheet

3 pages,
189.35 Kb

sn 1699 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
RAC 20 19 41 17 RX ILTF RDC CAC CAC 26 25 14 12 61 60 59 58 57 28 33 35 19 20 21 22 23 24 62 29 53 53 CS3/GX3 VEE2 VEE3 N.C. VFXI2 VFRO2 SUB VFRO1 VFXI1 CAP VFRO3 N.C. VFXI3 VCC2 VCC3 D98TL405 D98TL405 22 23 24 25 26 60 IO8 61 IO7 62 IO6/FS3 63 RES 64 N.C. N.C. N.C. IO0/GR2 IO1/PD2 IO2/GR3 17 18 19 20 21 37 36 34 connected between ground and this pin. POWER SUPPLY 25, 36, 37, 44, 45, 56, VCC/0/1/2/3/ 4/5 APS Total 6 in power up. (equivalent to CONF reg. bit2 = 0) 21 IO2/GR3 DIO/DI MCU control mode: IO2. Slic control
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7052.htm
STMicroelectronics 20/10/2000 61.92 Kb HTM 7052.htm
/A3 MIC 2+ MIC 1+ TRO MIC 1- VCCA MIC 2- GNDA EAIN 1 3 2 4 5 6 7 8 9 26 25 24 23 22 20 21 19 27 10 28 Microphone Dynamic, Piezo or Electrete - Earpiece down to 100 W or up to 150nF - Loudspeaker down to 50 W or General Features: EXTENDED TEMPERATURE RANGE OP- ERATION (*) - 25 5 C TO +85 5 C. EXTENDED POWER SUPPLY interface compatible. (*) Functionality guaranteed in the range - 25 5 C to +85 5 C; Timing and Electrical load impedances between 100 and 400 W or a piezo ceramic transducer up to 150nF. These outputs can
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1435-v1.htm
STMicroelectronics 14/06/1999 66.56 Kb HTM 1435-v1.htm
MIC2+ MIC1+ GNDA MIC3- MIC3+ 1 3 2 4 5 6 7 8 9 26 25 24 23 22 20 21 19 27 10 28 6 4 7 8 9 10 17 11 18 19 20 21 22 44 43 42 41 39 40 38 37 36 35 34 28 27 26 24 23 25 selected by means of Control Register CRO. MCLK is used also to shift-in and out data. 21 LO A logic 1 connection. 24 MIC1- Negative high impedance input to transmit pre-amplifier for microphone connection. 25 mode voice data byte is shifted out on the falling edge of MCLK. 21 GND Ground: All digital signals
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4589-v3.htm
STMicroelectronics 25/05/2000 61.77 Kb HTM 4589-v3.htm
MIC2+ MIC1+ GNDA MIC3- MIC3+ 1 3 2 4 5 6 7 8 9 26 25 24 23 22 20 21 19 27 10 28 D R FS D94TL094 D94TL094 CCLK CS- CI CO D x GND 11 12 13 18 16 17 15 14 BZ V CC 1 2 3 5 6 4 7 8 9 10 17 11 18 19 20 21 22 44 43 42 41 39 40 38 37 36 35 34 28 27 26 24 23 25 33 32 31 29 30 VLr+ VLr- N.C. VFr- N.C. VFr+ N.C. DR N.C. N.C. selected by means of Control Register CRO. MCLK is used also to shift-in and out data. 21 LO A logic 1 connection. 24 MIC1- Negative high impedance input to transmit pre-amplifier for microphone connection. 25
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4589-v2.htm
STMicroelectronics 14/06/1999 59.83 Kb HTM 4589-v2.htm
/A3 MIC 2+ MIC 1+ TRO MIC 1- VCCA MIC 2- GNDA EAIN 1 3 2 4 5 6 7 8 9 26 25 24 23 22 20 21 19 27 10 28 Microphone Dynamic, Piezo or Electrete - Earpiece down to 100 W or up to 150nF - Loudspeaker down to 50 W or General Features: EXTENDED TEMPERATURE RANGE OP- ERATION (*) - 25 5 C TO +85 5 C. EXTENDED POWER SUPPLY interface compatible. (*) Functionality guaranteed in the range - 25 5 C to +85 5 C; Timing and Electrical load impedances between 100 and 400 W or a piezo ceramic transducer up to 150nF. These outputs can
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1435.htm
STMicroelectronics 02/04/1999 66.6 Kb HTM 1435.htm
MIC3- MIC3+ 1 3 2 4 5 6 7 8 9 26 25 24 23 22 20 21 19 27 10 28 D R FS D94TL094 D94TL094 CCLK CS- CI CO D x GND 11 12 13 18 16 17 15 14 BZ V CC 1 2 3 5 6 4 7 8 9 10 17 11 18 19 20 21 22 44 43 42 41 39 40 38 37 36 35 34 28 27 26 24 23 25 33 32 31 29 30 VLr+ VLr- N.C. VFr- N.C. VFr+ N.C. DR N.C. N.C. GNDP N.C. N.C. (*) -40 5 C to 85 5 C. 1.5 m W STANDBY POWER (TYP. AT 3V). 21 mW OPERATING POWER (TYP. AT 3V). CMOS selected by means of Control Register CRO. MCLK is used also to shift-in and out data. 21 LO A logic 1
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1436.htm
STMicroelectronics 02/04/1999 59.8 Kb HTM 1436.htm
MIC2+ MIC1+ GNDA MIC3- MIC3+ 1 3 2 4 5 6 7 8 9 26 25 24 23 22 20 21 19 27 10 28 D R FS D94TL094 D94TL094 CCLK CS- CI CO D x GND 11 12 13 18 16 17 15 14 BZ V CC 1 2 3 5 6 4 7 8 9 10 17 11 18 19 20 21 22 44 43 42 41 39 40 38 37 36 35 34 28 27 26 24 23 25 33 32 31 29 30 VLr+ VLr- N.C. VFr- N.C. VFr+ N.C. DR N.C. N.C. selected by means of Control Register CRO. MCLK is used also to shift-in and out data. 21 LO A logic 1 connection. 24 MIC1- Negative high impedance input to transmit pre-amplifier for microphone connection. 25
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4589-v1.htm
STMicroelectronics 02/04/1999 59.87 Kb HTM 4589-v1.htm
MIC3- MIC3+ 1 3 2 4 5 6 7 8 9 26 25 24 23 22 20 21 19 27 10 28 D R FS D94TL094 D94TL094 CCLK CS- CI CO D x GND 11 12 13 18 16 17 15 14 BZ V CC 1 2 3 5 6 4 7 8 9 10 17 11 18 19 20 21 22 44 43 42 41 39 40 38 37 36 35 34 28 27 26 24 23 25 33 32 31 29 30 VLr+ VLr- N.C. VFr- N.C. VFr+ N.C. DR N.C. N.C. GNDP N.C. N.C. (*) -40 5 C to 85 5 C. 1.5 m W STANDBY POWER (TYP. AT 3V). 21 mW OPERATING POWER (TYP. AT 3V). CMOS selected by means of Control Register CRO. MCLK is used also to shift-in and out data. 21 LO A logic 1
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1436-v1.htm
STMicroelectronics 14/06/1999 59.77 Kb HTM 1436-v1.htm
V Lr- V Fr+ V Lr+ GNDP MCLK LO MIC2- MIC1- MIC2+ MIC1+ GNDA MIC3- MIC3+ 1 3 2 4 5 6 7 8 9 26 25 24 23 22 20 21 19 27 10 28 D R FS D94TL094 D94TL094 CCLK CS- CI CO D x GND 11 12 13 18 16 17 15 14 BZ V CC 1 2 3 5 6 4 7 8 9 10 17 11 18 19 20 21 22 44 43 42 41 39 40 38 37 36 35 34 28 27 26 24 23 25 33 32 31 29 to shift-in and out data. 21 LO A logic 1 written into DO (CR1) appears at LO pin as a logic 0 A transmit pre-amplifier for microphone connection. 25 MIC1+ Positive high impedance input to transmit
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4589.htm
STMicroelectronics 20/10/2000 65.04 Kb HTM 4589.htm
Dynamic, Piezo or Electrete - Earpiece down to 100 W or up to 150nF - Loudspeaker down to 50 W or Buzzer - 25 5 C to +85 5 C. APPLICATIONS: ISDN TERMINALS. DIGITAL TELEPHONES CT2 AND GSM APPLICATIONS This between 100 and 400 W or a piezo up to 150nF. These outputs can drive directly earpiece transductor. The pin in high impedance. 18 N.C. No Connected. 21 MIC2+ Alternative positive high impedance input to symetrical connection. 24 N.C. No connected. 25 V CCA Positive power supply input for the analog section. +5
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1434.htm
STMicroelectronics 02/04/1999 60.33 Kb HTM 1434.htm