500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : HJF12-E1G41ERL Supplier : Halo Electronics Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : NDARHJ-F306 Supplier : Amphenol Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : R5F6456HJFD#U0 Supplier : Renesas Electronics Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : V610-HJFF-108/132-AB Supplier : Esterline Power Systems Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : NCDA1F250-0400HJ-F5PL Supplier : SMC Manufacturer : Allied Electronics & Automation Stock : - Best Price : $286.20 Price Each : $286.20
Part : OHJFGCJANF25.000000 Supplier : TAITIEN Manufacturer : America II Electronics Stock : 1,409 Best Price : - Price Each : -
Part : 77A2HJFL514 Supplier : Texas Instruments Manufacturer : Bristol Electronics Stock : 17 Best Price : - Price Each : -
Part : QSMT-QWBL-NHJFE Supplier : Avago Technologies Manufacturer : Bristol Electronics Stock : 701 Best Price : - Price Each : -
Part : LTL1CHJFTNN Supplier : Lite-On Semiconductor Manufacturer : TME Electronic Components Stock : 11,295 Best Price : $0.0324 Price Each : $0.1040
Part : HJFC-0008 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : HJFC-0009 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : HJFC-0011 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : HJFC-0018 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : HJFC-0021 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : HJFC-0026 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : HJFC-1111112 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $333.54 Price Each : $379.72
Part : HJFC-1111212 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $320.10 Price Each : $370.17
Part : HJFC-1111312 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : HJFC-1112112 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $300.30 Price Each : $341.88
Part : HJFC-1151112 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $310.99 Price Each : $359.63
Part : HJFC-1151212 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $326.18 Price Each : $377.20
Part : HJFC-2221111 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $310.99 Price Each : $359.63
Part : HJFC-2222111 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $306.95 Price Each : $349.45
Part : HJFC-2222211 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $323.57 Price Each : $368.37
Part : HJFC-2231111 Supplier : OTTO Controls Manufacturer : Sager Stock : - Best Price : $323.14 Price Each : $373.69
Shipping cost not included. Currency conversions are estimated. 

hjfet

Catalog Datasheet MFG & Type PDF Document Tags

nf025

Abstract: NE27283 Purpose GaAs FET General Purpose GaAs FET General Purpose HJ-FET General Purpose HJ-FET General Purpose HJ-FET General Purpose HJ-FET General Purpose HJ-FET General Purpose HJ-FET Mobile Comm. HJ-FET Mobile Comm. HJ-FET BS Converter OSC Stage GaAs FET BS Converter OSC Stage GaAs FET BS Converter OSC Stage , Converter GaAs FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET Performances NF=1.4dB, Ga=10dB@f=12GHz NF
NEC
Original
nf025 NE27283 upc27 x-band power transistor 100W P147D NE42484 X13769XJ2V0CD00 950MH 500MH PC8119T PC8120T PC8130TA

1658 NEC

Abstract: SW SPDT /GMRS Bluetooth Si MMIC TM GaAs MMIC GaAs HJ-FET Si TRANSISTOR 30M 6 100M 300M , Bipolar Tr. (fT = 15.5 GHz) 2SC5369 Si Bipolar Tr. (fT = 14 GHz) HJ-FET NE34018, NE38018 , Tr. Type Name 2SC5508 Feature Si Bipolar Tr. (fT = 25 GHz) 2SC5761 SiGe Tr. HJ-FET , Discrete Tr. 2SC5508 Si Bipolar Tr. (fT = 25 GHz) HJ-FET NE34018 NE38018 Low Noise GaAs FET , 1cell: 3.6 V(TYP.) Under examination fRX = 832 to 834 MHz GaAs HJ-FET NE34018, NE38018 fRX = 843 to
NEC
Original
NE52418 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 PX10020EJ08V0PF PG2022TB PG2024TQ

ic isl 887

Abstract: 2SC5508 Bluetooth Si MMIC TM GaAs MMIC GaAs HJ-FET Si TRANSISTOR 30M 100M 300M 1G 3G , (NE69039) 2SC5754 (NE664M04) PG2179TB HJ-FET 2SC5369 (NE696M01) NE3509M04 PC2756TB PC2757TB , fRF SW OSC LNA HJ-FET X, Ku , 20 GHz GaAs HJ-FET IF , D/U Ratio = 40 dB 22 DBS HJ-FET NE3512S02 HJ-FET NE3503M04 NE3512S02 IF , µPC3232TB µPC3236TK µPC3239TB µPC3241TB SW HJ-FET (20 GHz) NE3517S03 IDU HJ-FET (20
Renesas Electronics
Original
NESG2031M05 ic isl 887 NE3514 NE3515S02 PG2179 NE5510279A NE662M04 NESG2031M16 NE55410GR NEM090303M-28 NEM090603M-28

NE5510279A

Abstract: uPB1512TU GaAs HJFET for up to 24 GHz, to state-of-the-art 13 GHz SiGe prescalers. LNA NE3504S02 NF 0.30 dB; Ga 14.0 dB @ 12 GHz; GaAs HJ-FET NE3210S01 NF 0.35 dB; Ga 13.5 dB @ 12 GHz; GaAs HJ-FET NE350184C NF 0.70 dB; Ga 13.0 dB @ 20 GHz; GaAs HJ-FET, ceramic PKG MIXER NE4210S01 NF 0.50 dB; Ga 13.0 dB @ 12 GHz; GaAs HJ-FET NE3503M04 NF 0.75 dB; Ga 12.0 dB @ 12 GHz; GaAs HJ-FET, mold , receiver ICs with an integrated A/D converter. We also offer low-noise HJ-FET and SiGe transistors to
NEC
Original
uPB1512TU dvbt diagram PMR446 5.8 ghz Transceiver IC gp bjt InMarSat demodulator PD1512TU PD1513TU

2SK2396

Abstract: PC2763 NE71300 NE71383B NE76118 NE23383B GaAs FET GaAs FET GaAs FET HJFET 3 3 3 2 10 10 10 10 12000 12000 , GHz NE24200 NE24283B HJFET HJFET 2 2 10 10 12000 NF = 0.6 dB 83B 400018000 NF = 0.6 dB, Ga = 11 dB@f = 12 GHz NE27200 NE32500 NE32900 HJFET HJFET HJFET 2 , dB@f = 12 GHz NE34018 HJFET 2 5 8003000 NF = 0.6 dB, Ga = 16 dB, Gs = 18 dB@f = 2 GHz 18 NE38018 HJFET 2 5 8003000 NF = 0.55 dB, Ga = 14.5 dB, Gs = 16
NEC
Original
PC2763 PC3210 PC2711 2SK2396 pc1658 2SC3545 2SC3357 upc2713 PC8131TA PG175TA PC2723T PC3206GR PC3211GR PC8101GR
Abstract: DATA SHEET_ N-CHANNEL GaAs HJ-FET N E 6 5 1 0 1 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power (CW) with high linear gain, high efficiency and excellent distortion , . FEATURES â'¢ GaAs HJ-FET Structure â'¢ High Output Power Po = +31.5 dBm typ. @ V ds = -
OCR Scan
NE6510179A-T1

x 1535 ce

Abstract: 0537 PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency and excellent distortion and is suitable as a driver , stringent quality and control procedures. FEATURES · G aA s HJ-FET Structure · · HighOutput HighLinear
-
OCR Scan
x 1535 ce 0537 NE6510379A NE651R479A-T1

2as01

Abstract: 2AS01 equivalent HJ-FET, GaAs FET -X84, 84A, 84C MoldS01, S02 PX10614JJ01V0TN1 P10149JJ7V0IFJ1 June 2006 NS CP(K , PX10614JJ01V0TN 3 1. DBS NEC HJ-FET, GaAs FET 1. 1 84, 84A, 84C Mold NEC -X , mm 4. 110 PX10614JJ01V0TN 19 5. 5. 1 HJ-FET, GaAs FET
NEC
Original
2as01 2AS01 equivalent t1a 95 T1A 84 t1a 60 M8E02 S02HJ-FET

NE6510379A

Abstract: NE6510379A-T1 PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · GaAs HJ-FET Structure · High Output Power : PO = +35 dBm
NEC
Original
NE6510379A-T1 hjfet application nec 1761 PG10023EJ01V0DS

California Eastern Laboratories OR NEC

Abstract: T-78 PRELIMINARY DATA SHEET 5 W Ku-BAND POWER GaAs HJ-FET NEZ1414-5H FEATURES OUTLINE DIMENSIONS (Units in mm) · CLASS A OPERATION PACKAGE OUTLINE X-17 · HIGH OUTPUT POWER: 37.5 dBm TYP · HIGH LINEAR GAIN: 9.0 dB TYP 8.25 ± 0.15 · HIGH EFFICIENCY: 36% TYP · INPUT AND OUTPUT INTERNALLY MATCHED GATE SOURCE 9.7 ± 0.13 2.74 ± 0.1 R 1.37 DESCRIPTION DRAIN The NEZ1414-5H is a power GaAs HJ-FET which provides high gain, high efficiency and high output in Ku-band. The
NEC
Original
California Eastern Laboratories OR NEC T-78

NE6510179A

Abstract: NE6510379A PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency and excellent distortion and is suitable as a driver amplifier for our , control procedures. FEATURES · GaAs HJ-FET Structure · High Output Power : PO = +27 dBm typ. @VDS
NEC
Original

a 1232 nec

Abstract: NE6510179A DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · · GaAs HJ-FET Structure High Output Power High Linear
-
OCR Scan
a 1232 nec nec 1565 NEC TANTALUM

gaas fet micro-X Package

Abstract: NE76184A-T1 User's Manual TAPE AND REEL SPECIFICATION FOR MICRO-X PACKAGE AND MOLD PACKAGE (HJ-FET & GaAs MES FET) Document No. P10149EJ6V0UM00 (6th edition) Date Published October 1997 N © 1989 , mold package for HJ-FET and GaAs MES FET with low cost and high performance so that the customers can , . ADAPTED AREA This specification covers standards on tape packaging micro-X GaAs MES FET, HJ-FET and on tape packaging mold GaAs MES FET, HJ-FET. 2-1. TAPE DIMENSIONS t J X G E H
NEC
Original
gaas fet micro-X Package NE76184A-T1 gaas fet micro-X P1014 t25000
Abstract: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion , . FEATURES â'¢ â'¢ GaAs HJ-FET Structure High Output Power : Po = +35 dBm typ. â'¢ High Linear -
OCR Scan
7T77T7

X13769XJ2V0CD00

Abstract: 2SC4703 3SK224 PLL µPC1687 CDROM X13769XJ2V0CD00 AV DBS #1 HJFET GaAs MMIC HJFET HJFET NE3210S01 NE425S01 SW+IF Amp. NE425S01 NE329S01 NE4210M01 NE4210M01 µ PG182GR NE325S01 SW µ
NEC
Original
PC2709TB PC2781GR 2SC4703 PC1099 2SC470-3 PC1891A R78K0 PWM lcd TV PD78064Y 780308Y PD780205 PD7500 PD78064 PD78064B
Abstract: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency and excellent distortion and is suitable as a , by NECâ'™s stringent quality and control procedures. FEATURES â'¢ GaAs HJ-FET Structure -
OCR Scan

NE6510379A

Abstract: NE6510379A-T1 PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · GaAs HJ-FET Structure · High
NEC
Original
0949
Abstract: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. Reliability and , HJ-FET Structure · · · High Output Power High Linear Gain : Po = +35 dBm typ. @Vos = 3.5 V, : G l = 13 dB -
OCR Scan

2SC5508

Abstract: UPC3243 HJ-FET Si TRANSISTOR 30M 100M 300M TM 1G 3G 10G 30G (Hz) The mark shows , Down-converter D/C 2SC5369(NE696M01) HJ-FET PC2756TB 6-pin Super Minimold PC2757TB PC2758TB , Band Processor Recommended device list Block LNA Function LNA Type Name HJ-FET Series Feature GaAs HJ-FET Series for X, Ku-band, 20 GHz band GP = 25.0 dB, PO (1 dB) = -4.0 dBm (3.3 V) GP , Digital DBS (Satellite Broadcasting) HJ-FET NE3512S02 HJ-FET NE3503M04 NE3512S02 IF Amplifier
Renesas Electronics
Original
UPC3243 transistor 20107 UPC8236 NE3509 UPC3240 NESG270034 R09CA0001EJ0300

NE6510179A

Abstract: NE6510179A-T1 DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · GaAs HJ-FET structure · High output
NEC
Original
Showing first 20 results.