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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

hitachi diode

Catalog Datasheet MFG & Type PDF Document Tags

714 diode varicap

Abstract: hitachi diode DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi , office for any questions regarding this document or Hitachi semiconductor products. HITACHI DIODE Contents 1. General Purpose Diodes 2. High-Frequency Diodes HITACHI DIODE 1. General Purpose Diodes HITACHI DIODE Features of Hitachi Diodes Schottky-barrier diodes Wide lineup of low
Hitachi Semiconductor
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hitachi rectifier

Abstract: Hitachi Zener diodes . · Nomenclature of Hitachi Diodes. · Hitachi Diode Symbols and Their Definitions. · Reliability of Hitachi Diodes. · Hitachi Diode Manufacturing Process and Quality Control , . · Selection Table According to Main Diode Applications
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HITACHI DIODE

Abstract: Hitachi Diode Symbols and Their Definitions H it a c h i u s e s m a n y s y m b o ls d r a w n fr , 27 Hitachi Diode Symbols and Their Definitions Table 1 Diode Maximum Ratings Term Repetitive , Lead temperature Tl 28 Hitachi Diode Symbols and Their Definitions Symbol of Electrical , applied. Q = 1/27tf-rs-C 30 Hitachi Diode Symbols and Their Definitions 4. Indicator of Units and , dissipation at the junction. Maximum value of power dissipation repeatedly consumable in diode under specified
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MIL-STD-105D

Abstract: "Hitachi Diode" Hitachi Diode Manufacturing Process and Quality Control Hitachi makes every possible effort to , Hitachi Diode Manufacturing Process and Quality Control Flow chart No. Material Process Process Name , Inspection process Figure 2 Glass-Sealed Type Diode Quality Control Flowchart 46 Hitachi Diode , type diode and Figure 3, the plastic-sealed type diode. In addition to inspection of all diodes, Hitachi also carries out sam pling inspections in accordance with the M IL STD -105D standard, to provide
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BV320

Abstract: Hitachi DSAUTAZ005 HVU308A Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU308A ZDV D +EG=1.1100E+00 +CJO=3.4000E-11 +TT=5.1390E-06 +CJO2=4.5854E-11 +COFF=1.0000E-12 +IS=7.4220E-16 +PB=7.6000E-01 +BV=3.2000E+01 +M2=1.0777E+00 +N=1.0000E+00 +M=6.4070E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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BV320 Hitachi DSAUTAZ005 2446E-13 5000E-01 0000E-01 5000E

hitachi diode

Abstract: diode d.a.t.a. book Hitachi Diode DATA BOOK HITACHI ADE-408-006A
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hitachi diode diode d.a.t.a. book
Abstract: Hitachi Electronic Components Data Book Hitachi Diode m- r - - - -
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Hitachi DSAUTAZ005

Abstract: Hitachi spice model HVC317B Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVC317B ZDV D +EG=1.1100E+00 +CJO=1.5500E-11 +TT=5.1390E-06 +CJO2=1.6248E-10 +COFF=5.0000E-13 +IS=1.1990E-14 +PB=7.6000E-01 +BV=3.5000E+01 +M2=1.8121E+00 +N=1.0000E+00 +M=4.9600E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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Hitachi spice model 0000E-13 6330E-11 6000E

Hitachi DSAUTAZ005

Abstract: hvc362 HVC362 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVC362 ZDV D +EG=1.1100E+00 +CJO=8.0000E-11 +TT=5.1390E-06 +CJO2=2.4131E-10 +COFF=2.0000E-12 +IS=3.0830E-15 +PB=7.5000E-01 +BV=1.5000E+01 +M2=1.6747E+00 +N=1.0000E+00 +M=5.7100E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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hvc362 spice 0000E-11 8002E-12

Hitachi DSAUTAZ005

Abstract: HVC369B Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVC369B ZDV D +EG=1.1100E+00 +CJO=9.1000E-12 +TT=5.1390E-06 +CJO2=7.6266E-12 +COFF=1.0000E-12 +IS=1.5420E-15 +PB=7.6000E-01 +BV=1.5000E+01 +M2=1.0880E+00 +N=1.0000E+00 +M=7.0230E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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0001E-13

Hitachi DSAUTAZ005

Abstract: m654 HVU316 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU316 ZDV D +EG=1.1100E+00 +CJO=1.0400E-11 +TT=5.1390E-06 +CJO2=1.6192E-11 +COFF=3.0000E-13 +IS=5.5960E-15 +PB=7.7000E-01 +BV=3.0000E+01 +M2=1.0836E+00 +N=1.0000E+00 +M=6.5470E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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m654 5341E-12

Hitachi DSAUTAZ005

Abstract: HVU363A Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU363A ZDV D +EG=1.1100E+00 +CJO=6.3000E-11 +TT=5.1390E-06 +CJO2=4.9656E-10 +COFF=2.0000E-12 +IS=3.0840E-14 +PB=7.6000E-01 +BV=3.2000E+01 +M2=1.6509E+00 +N=1.0000E+00 +M=5.8200E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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8415E-11

Hitachi DSAUTAZ005

Abstract: HVU300A Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU300A ZDV D +EG=1.1100E+00 +CJO=1.0400E-10 +TT=5.1390E-06 +CJO2=2.5747E-09 +COFF=2.0000E-12 +IS=2.2276E-14 +PB=7.6000E-01 +BV=3.2000E+01 +M2=2.1947E+00 +N=1.0000E+00 +M=6.7600E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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0400E-10 7745E-11 1000E

Hitachi DSAUTAZ005

Abstract: HVU307 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU307 ZDV D +EG=1.1100E+00 +CJO=6.7670E-11 +TT=5.1390E-06 +CJO2=1.9992E-10 +COFF=1.0000E-13 +IS=2.9370E-15 +PB=7.9000E-01 +BV=3.2000E+01 +M2=1.2197E+00 +N=1.0272E+00 +M=4.9630E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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5613E-12 3000E-01

hvc359 spice

Abstract: Hitachi DSAUTAZ005 HVC359 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVC359 ZDV D +EG=1.1100E+00 +CJO=8.7500E-11 +TT=5.1390E-06 +CJO2=1.3012E-10 +COFF=2.0000E-12 +IS=1.6700E-15 +PB=7.6000E-01 +BV=1.5000E+01 +M2=1.8310E+00 +N=1.0000E+00 +M=1.3407E+00 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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hvc359 spice 7504E-13

Hitachi DSAUTAZ005

Abstract: HVU362 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU362 ZDV D +EG=1.1100E+00 +CJO=8.0000E-11 +TT=5.1390E-06 +CJO2=2.4131E-10 +COFF=2.0000E-12 +IS=3.0830E-15 +PB=7.5000E-01 +BV=1.5000E+01 +M2=1.6747E+00 +N=1.0000E+00 +M=5.7100E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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17000E

Abstract: m50790 HVB27WK Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVB27WK ZDV D +EG=1.1100E+00 +CJO=8.9320E-11 +TT=5.1390E-06 +CJO2=3.6390E-11 +COFF=1.0000E-11 +IS=5.9340E-14 +PB=8.0000E-01 +BV=1.5000E+01 +M2=3.1550E-01 +N=1.1181E+00 +M=5.0790E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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17000E m50790 0983E-11 7000E

Hitachi DSAUTAZ005

Abstract: HVR100 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVR100 ZDV D +EG=1.1100E+00 +CJO=7.3253E-10 +TT=5.1390E-06 +CJO2=2.4446E-05 +COFF=1.4800E-11 +IS=4.1640E-14 +PB=7.3000E-01 +BV=1.5000E+01 +M2=6.1364E+00 +N=1.0162E+00 +M=5.3560E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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3924E-11 4000E 2000E-01

Hitachi DSAUTAZ005

Abstract: HVU200A Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU200A ZDV D +EG=1.1100E+00 +CJO=6.8000E-11 +TT=5.1390E-06 +CJO2=6.2464E-10 +COFF=1.5000E-12 +IS=3.4260E-15 +PB=7.6000E-01 +BV=3.2000E+01 +M2=1.7667E+00 +N=1.0000E+00 +M=6.3940E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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2668E-12

Hitachi DSAUTAZ005

Abstract: HVU355 HVU355 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU355 ZDV D +EG=1.1100E+00 +CJO=9.2000E-12 +TT=5.1390E-06 +CJO2=6.2242E-12 +COFF=3.0000E-13 +IS=7.7080E-16 +PB=7.6000E-01 +BV=1.5000E+01 +M2=5.1450E-01 +N=1.0000E+00 +M=3.8860E-01 , (Variable capacitance diode) * EG: Activation energy, Unit:Ve * CJO: Junction capacitance, Unit:F * TT , : Depretion cap. Coefficient * TEMP: Temperature * VR2: Peak reverse voltage Hitachi Semiconductor
Hitachi Semiconductor
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5000E-13
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