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HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station
POWERSTEP01TR STMicroelectronics System-in-package integrating microstepping controller and 10 A power MOSFETs
POWERSTEP01 STMicroelectronics System-in-package integrating microstepping controller and 10 A power MOSFETs
POWEREST Texas Instruments Power Estimation Tool (PET)
500VXG47MEFCSN22X25 Rubycon Corporation CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID
500VXG470MEFCSN35X60 Rubycon Corporation CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID

high power diode 500v

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: The new CoolMOS CE is the fourth technology platform of Infineon's market leading high voltage power , benefits FEATURES Reduced energy stored in output capacitance (Eoss) High body diode ruggedness Reduced , is a revolutionary technology for high voltage power MOSFETs [1, 2], Infineon Technologies has been , high dv/dt. The application of high reverse voltage on the body diode will sweep the remaining carriers , Diode Higher switching speeds could also cause drawbacks in case of, for example, high di/dt which Infineon Technologies
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IPA50R500CE DIODE V10-20 IPA50R280CE mosfet equivalent 400W pwm smps schematic IPA50R280C IPP50R500CE ED-29
Abstract: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOSTM CE Power , revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle , 2 Rev. 2.0, 2010-08-27 500V CoolMOSTM CE Power Transistor IPx50R380CE Table of Contents , , 2010-08-27 500V CoolMOSTM CE Power Transistor IPx50R380CE Thermal characteristics 3 Thermal , , 2010-08-27 500V CoolMOSTM CE Power Transistor IPx50R380CE Electrical characteristics 4 Electrical Infineon Technologies
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IPP50R380CE IPA50R380CE IPI50R380CE 5R380CE 5R38 5r380 50R380CE PG-TO220 PG-TO262
Abstract: 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform DUT } Vos , TAIWAN SEMICONDUCTOR (pb) rohs V,^ COMPLIANCE TSM1N50 500V N-Channel Power MOSFET Pin , offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed , ›8 TSM1N50 500V N-Channel Power MOSFET Thermal Performance Parameter Symbol Limit Unit Lead Temperature , /7 Version: BÛ8 TAIWAN SEMICONDUCTOR (ps) rohs V,^ COMPLIANCE TSM1N50 500V N-Channel Power -
OCR Scan
BA-20 diode D 92 M - 03 DIODE 1N50 1N50C 500v 2A mosfet 2A 500V MOSFET TSM1N50CT
Abstract: High power, high efficiency PFC circuit Up to 400kHz switching frequency MOSFET and IGBT designs Integrated high frequency capacitor Part-No Voltage Power Power Special Features (50kHz) (400kHz , W W W Evaluation tool for flowPFC 0 Ultra low profile High power density 200kHz switching , Power Modules Fast Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different Vincotech
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V23990-P629-F56-PM1 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A P623-P629 V23990-P622-F64-PM V23990-P622-F74-PM1 V23990-P623-F-PM2 V23990-P623-F04-PM V23990-P623-F10-PM1
Abstract: TSM4ND50 500V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2 , are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp , Limit 2.78 100 Unit o o C/W C/W 1/9 Version: D11 TSM4ND50 500V N-Channel Power MOSFET , : D11 TSM4ND50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless , : D11 TSM4ND50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless Taiwan Semiconductor
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TSM4ND50CH TSM4ND50CP
Abstract: Ceramic Capacitor 1812, 2n2, 500V, X7R, ±10% BAV70 SMD Double Diode (Common K), 70V, 150mA, SOT23 BAV70 , , 0805, 8R2, 1/8W, 1% SMD Power Resistor, 2512, 18R, 1W, 5% SMD HIGH Power Resistor, 2512, 12R, 70W, 5 , °, 5% High Power RF Resistor, 100R, 250W, 5% SMD Resistor, 0805, 8R2, 1/8W, 1% SMD Resistor, 0805 , Resistor, 2512, 18R, 1W, 5% SMD HIGH Power Resistor, 2512, 12R, 70W, 5% Aluminium Nitride SMD Resistor , Ceramic Capacitor, 0805, 1n0, 50V, NP0, ±5% SMD Multilayer Ceramic Capacitor 1812, 2n2, 500V, X7R,  STMicroelectronics
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smd diode A2 capacitor 1n0 CAPACITOR PORCELAIN diode smd A2 SMD 0805 capacitor SMD resistor STEVAL-TDR029V1 DMC10008 PCB10007 PCB10008 CCB470PA CER220UE
Abstract: TSM4ND50 500V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2 , are well suited for high efficiency switch mode power supply, power factor correction, electronic , Continuous Source Current (Diode Conduction) IS o Total Power Dissipation @TC=25 C Operating , TSM4ND50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted , . Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: B08 TSM4ND50 500V Taiwan Semiconductor
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n-channel 500v sot 23 Power MOSFET pin diagram of MOSFET N-Channel 40V MOSFET MOSFET 500V 15A marking code B08 and
Abstract: Version: B13 TSM15N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform , TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3 , . These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast , TSM15N50 500V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - , 500V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted Taiwan Semiconductor
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TSM15N50CZ TSM15N50CI
Abstract: superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Max Rating , SSF13N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS(on) 0.41Î , N-Channel enhancement mode power field effect transistors are produced using our proprietary MOSFET , '¡ 52 Power Dissipationâ'¢ 50 W Linear Derating Factor 0.4 W/°C VDS Good-Ark
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Abstract: Version: D13 TSM20N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform , TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3 , . These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast , TSM20N50 500V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - , 500V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted Taiwan Semiconductor
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TSM20N50CZ TSM20N50CI
Abstract: TSM5ND50 500V N-Channel Power MOSFET TO-220 TO-252 PRODUCT SUMMARY Pin Definition: 1 , are well suited for high efficiency switch mode power supply, power factor correction, electronic , W C o Version: A08 TSM5ND50 500V N-Channel Power MOSFET Thermal Performance Parameter , 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted , 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted Taiwan Semiconductor
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A08 marking marking A08 SOT-252 MOSFET 400V TO-220 mosfet "marking code 44" N-Channel mosfet 400v to220 TSM5ND50CZ TSM5ND50CP
Abstract: TSM4ND50 500V N-Channel Power MOSFET Test Circuit for Inductive Load Switching and Diode Recovery Times , TSM4ND50 500V N-Channel Power MOSFET TO-220 TO-252 PRODUCT SUMMARY Pin Definition: 1 , are well suited for high efficiency switch mode power supply, power factor correction, electronic , . 1/9 W C o Version: A08 TSM4ND50 500V N-Channel Power MOSFET Thermal Performance , Version: A08 TSM4ND50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC Taiwan Semiconductor
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TSM4ND50CZ N-CHANNEL POWER MOSFET N-channel 500V mosfet MOSFET 500V 3A mosfet based h bridge 18BSC
Abstract: TSM5ND50 500V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2 , are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp , TSM5ND50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted , 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted , Transient Impedance, Junction-to-Ambient 4/9 Version: E11 TSM5ND50 500V N-Channel Power MOSFET Taiwan Semiconductor
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marking E11 DIODE E11 diode TSM5ND50CH
Abstract: TSM5ND50 500V N-Channel Power MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source , are well suited for high efficiency switch mode power supply, power factor correction, electronic , IDM 17.6 A Continuous Source Current (Diode Conduction) IS Total Power Dissipation @Ta , Version: C07 TSM5ND50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless , . Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: C07 TSM5ND50 500V Taiwan Semiconductor
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n-channel 250V power mosfet ENHANCEMENT MOSFET TO-252 MOSFET mosfet 250V 4A n channel enhancement mosfet
Abstract: TSM5ND50 500V N-Channel Power MOSFET Test Circuit for Inductive Load Switching and Diode Recovery Times , TSM5ND50 500V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2 , are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp , 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter , nS nC A 2/9 Version: F11 TSM5ND50 500V N-Channel Power MOSFET Electrical Characteristics Taiwan Semiconductor
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marking diode f11
Abstract: , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies Absolute Max , SSF18N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS(on , These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary , Currentâ'¡ 72 Power Dissipationâ'¢ 38 W Linear Derating Factor 0.3 W/°C VDS Good-Ark
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Abstract: on-state resistance, high switching performance and excellent quality. VDS = 500V ID = 11.5A RDS(ON) 0.65 MDF12N50 is suitable device for SMPS, high Speed switching and general purpose applications. @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching , Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation o Derate above 25 C Peak Diode , Preliminary ­ Subject to change without notice N-Channel MOSFET 500V, 11.5 A, 0.65 General -
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10T1 500V MOSFET Power Supply MagnaChip Semiconductor mdf12n n-Channel mosfet 400v uc pfc
Abstract: Temperature Source-Drain Diode Forward Voltage 3/8 Version: A12 TSM15N50CN 500V N-Channel Power , TSM15N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition: 1. Gate 2. Drain 3. Source , are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half , Version: A12 TSM15N50CN 500V N-Channel Power MOSFET Thermal Performance Parameter Thermal , essentially independent of operating temperature. 2/8 Version: A12 TSM15N50CN 500V N-Channel Power Taiwan Semiconductor
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Abstract: : C12 TSM13N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform , TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source , are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp , 1/10 Version: C12 TSM13N50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC , temperature. 2/10 Version: C12 TSM13N50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Taiwan Semiconductor
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TSM13N50CI TSM13N50CZ
Abstract: superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC , DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS Alpha Pacific Technologies
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APQ08SN50BH-XXM0 APQ08SN50BH-XXJ0 APQ08SN50BF-XXJ0 APQ08SN50BF-XXM0
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