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high power diode 500v

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Abstract: Drivers (500V, 2A) 2 - IR830 IR830 HEXFETs (500V, 4.5A) - Q1, Q2 1 - 10KF6 10KF6 Diode (600V, 1A) - D 1 1 - Capacitor , Wiring Board (located under foam) KIT COMPONENTS 1 - IR2125 IR2125 MOS Gate Driver (500V) 1 - IR2121 IR2121 MOS GateDriver (20V) 2 - IRC830 IRC830 HEXSense power FETs (500V) Q1, Q2 2 - Resistors (220, .25W, 5 %) R1, R3 2 - , Conference. IR2125/IR2121 IR2125/IR2121 ER91-2 ER91-2 "Power IC Driver Protects M O SFET s and IGBTs, operates to 500V", by P. Wood , Power Integrated Circuits Application Materials: IR2119 IR2119 DESIG N KIT FEATURING IR2110 IR2110 ... OCR Scan
datasheet

1 pages,
66.9 Kb

IR2129 ir2110 high power diode 500v ir2110 gate driver 10KF6 diode International Rectifier ELKO capacitors 10KF6 10Kf6 diode IR2119 IR2110 IR2119 abstract
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Abstract: Diode Recovery Times 4/7 Version: A12 TSM4NB50 TSM4NB50 500V N-Channel Power MOSFET TO-251 , TSM4NB50 TSM4NB50 500V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. , These devices are well suited for high efficiency switch mode power supply, power factor correction , Current (Diode Conduction) Single Pulse Drain to Source Avalanche Energy (Note 3) Total Power Dissipation , Version: A12 TSM4NB50 TSM4NB50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless ... Original
datasheet

7 pages,
183.5 Kb

test circuits for Mosfet capacitance MOSFET 500V 15A A12 diode 500v 2A mosfet TSM4NB50 TSM4NB50 abstract
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Abstract: hermetic power case - Low thermal resistance: 0.3°C/W max - 25A/500V ultrafast recovery diode rectifier , Power Hybrid, Diode Assembly P/N 2294770 DESCRIPTION The 2294770 Power Hybrid contains four center , power stage rectification in power supplies, are particulary suited for low EMI and high efficiency , Average Rectified Forward Current, Tc = 100° Schottky Diode , °C - - 100 mA Ultrafast Diode VR = 500V - - 50 uA VR = 500V, TC=125°C - - 5 mA CJ Junction ... OCR Scan
datasheet

2 pages,
160.34 Kb

L400 "Power Diode" 500V 50A Teledyne Microelectronics high power diode 500v RECTIFIER DIODE 1000A schottky DIODE 1000a datasheet abstract
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Abstract: On-Resistance. High power and current handing capability. Block Diagram Ordering Information Part No. , Source-Drain Diode Forward Voltage 5/9 Version: B12 TSM8N50 TSM8N50 500V N-Channel MOSFET Electrical , TSM8N50 TSM8N50 500V N-Channel MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. , Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range TSTG , 1/9 Version: B12 TSM8N50 TSM8N50 500V N-Channel MOSFET Electrical Specifications (Tc = 25oC unless ... Original
datasheet

9 pages,
344.03 Kb

N-channel 500V mosfet DIODE B12 48 MARKING CODE mosfet high power diode 500v DIODE B12 marking B12 diode B12 DIODE TSM8N50 TSM8N50 abstract
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Abstract: } Time 4/7 Version: BÛ8 TSM1N50 TSM1N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test , TAIWAN SEMICONDUCTOR (pb) rohs V,^ COMPLIANCE TSM1N50 TSM1N50 500V N-Channel Power MOSFET Pin , offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed , (ps) rohs V,^ COMPLIANCE TSM1N50 TSM1N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta , Voltage (V) 3/7 Version: BÛ8 TSM1N50 TSM1N50 500V N-Channel Power MOSFET Current Regulator Vos 10V- t- vds ... OCR Scan
datasheet

7 pages,
119.68 Kb

tsm1n50ct 2A 500V MOSFET 500v 2A mosfet high power diode 500v p channel mosfet 100v TAG TO-92 TSM1N50 1N50C 1N50 D 92 M - 03 DIODE TSM1N50 abstract
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Abstract: to install a special test device for use with probes. When a test is conducted under high power and , gate insulation oxide film. When high voltage is applied to this gate electrode (input of CMOS IC), the , voltage. However, protective circuits may not be effective against the accidental application of high , a ra s tic diode is fo rm ed betw een each te rm in a l a s indicated in F ig . 8 - 1 , th e rm a l , tim e s Output Input Im p rtM lo n of - voi tag* > -500V > -500V > -500V > -500V > -500V > -500V Im ... OCR Scan
datasheet

3 pages,
81.15 Kb

high power diode 500v HC93 datasheet abstract
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Abstract: conducted under high power and low tem perature, it is necessary to ensure grounding of the constant tem , gate insulation oxide film. When high voltage is applied to this gate electrode (input of CMOS 1C), the , voltage. However, protective circuits may not necessarily be effective ag ain st accidental high voltage , parastic diode is formed between each term inal as indicated in Fig. 8 -1 , th erm al breakdown, etc, due , C OOAP T C 7 4 H C 02A P TC 74H C 74AP TC 74H C 139AP 139AP TC 74H C 240AP 240AP TC 74H C 373AP 373AP 500V -500V ... OCR Scan
datasheet

3 pages,
93.78 Kb

datasheet abstract
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Abstract: has a very thin gate insulation oxide film . When high voltage is applied to this gate electrode , accidental high voltage; care m ust be fully taken in handling CMOS IC's. EÎ i) TC74HCxxx Ü) T C 7 4 H C , p u t E q u i v a l e n t C i r c u i t F urther, as a parastic diode is formed between each term , e s Input Im pression of - voltage Im pression of + voltage Im pression of - voltage > 500V > 500V > 500V > 500V > 500V > 500V > -500V > -500V > -500V > -500V > -500V > -500V > 500V > 500V ... OCR Scan
datasheet

3 pages,
100.7 Kb

datasheet abstract
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Abstract: Power Integrated Circuits Power 1C Applications Use the IR2110 IR2110 to drive power componente for these applications. IGBT MODULES International S Rectifier HEXFETs POWER SUPPLIES UNINTERRUPTIBLE POWER SUPPLIES (UPS) FLUORESCENT LIGHTING FRACTIONAL HP MOTOR DRIVES INTEGRAL HP MOTOR DRIVES AUTOMOTIVE MOTOR CONTROLS WELDING SUPPLIES IGBTs HEXSense HEXFETs T Use the IR8200B IR8200B to power , KIT COMPONENTS 2 - IR2110 IR2110 MOS Gate Drivers (500V, 2A) 2 - IR830 IR830 HEXFETs (500V, 4.5A) ~ Q1, Q2 1 - ... OCR Scan
datasheet

1 pages,
61.97 Kb

ir2110 gate driver offline UPS APPLICATION igbt 500V 2A IR8200B Inverter design dc motor ir2110 10KF6 diode International Rectifier PWM inverter design ir2110 application IR830 IR2110 IGBT DRIVER ic ir2110 IR2110 IR2110 abstract
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Abstract: VNL001A VNL001A - VNM001A VNM001A - VNN002A VNN002A - VNP002A VNP002A 500V N-Channel Enhancement Mode MOSPOWER B Siliconix These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. FEATURES - 200°C Rating - High Voltage - No Second Breakdown - High Input Impedance - Internal Drain-Source Diode - Very Rugged: Excellent SOA - Extremely Fast Switching BENEFITS - , BUP69 BUP69 400V TO-3 VNN002A VNN002A BUP70 BUP70 450V 1.5B 6.5A VNP002A VNP002A BUP71 BUP71 500V >unt ~ 2QQ!C rBS® ABSOLUTE ... OCR Scan
datasheet

1 pages,
42.78 Kb

BUP68 VNM001A BUP69 BUP70 BUP71 VNP002A RBS 200 VNL001A VNN002A 9651 VNL001A abstract
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Diode TO247 STW15/ STW15/ STW15/ STW15/ 20B50 20B50 20B50 20B50 Mosfet 500V 15/20A 15/20A 15/20A 15/20A high dV/dt Diode TO-247 STY34NB50 STY34NB50 STY34NB50 STY34NB50 Mosfet 500V 34A high dV/dt Diode Max247 STP32MD50 STP32MD50 STP32MD50 STP32MD50 Mosfet 500V DEVICES MAIN FEATURES Power Factor Corrector L4981A/B L4981A/B L4981A/B L4981A/B High Efficiency Power Factor Controller - Frequency modulation & Load feedforward 500V/600V Mosfet high dV/dt capability TO220/Max220/TO247 STGD/P/WxxN60H 600V
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv2.htm
STMicroelectronics 16/01/2001 10.4 Kb HTM motdrv2.htm
STW15/ STW15/ STW15/ STW15/ 20NB50 20NB50 20NB50 20NB50 Mosfet 500V 15/20A 15/20A 15/20A 15/20A high dV/dt Diode TO-247 STY34NB50 STY34NB50 STY34NB50 STY34NB50 Mosfet 500V 34A high dV/dt Diode Max247 STP32MD50 STP32MD50 STP32MD50 STP32MD50 Mosfet 500V 320mOhm TO220 DEVICES MAIN FEATURES Power Factor Corrector L4981A/B L4981A/B L4981A/B L4981A/B High Efficiency Power Factor Controller - Frequency Modulation & Load Feed Forward 500V/600V Mosfet high dV/dt capability TO220/Max220/TO247 STGD/P/WxxN60H 600V
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv3.htm
STMicroelectronics 16/01/2001 10.59 Kb HTM motdrv3.htm
/20A high dV/dt Diode TO-247 STY34NB50 STY34NB50 STY34NB50 STY34NB50 Mosfet 500V 34A high dV/dt Diode Max247 STP32MD50 STP32MD50 STP32MD50 STP32MD50 Mosfet 500V 320mOhm TO220 (Multi-Drain Power MES Technology) STTAxx06 / 12 DEVICES MAIN FEATURES Power Factor Corrector L4981A/B L4981A/B L4981A/B L4981A/B High Efficiency Power Factor Controller - Frequency modulation & Load feedforward STTH806TTI STTH806TTI STTH806TTI STTH806TTI Dedicated Boost Diode - hyperfast and extreme low Irm STP/U/WxxNB50/60 500V/600V
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv3-v1.htm
STMicroelectronics 20/10/2000 11.61 Kb HTM motdrv3-v1.htm
/20A high dV/dt Diode TO-247 STY34NB50 STY34NB50 STY34NB50 STY34NB50 Mosfet 500V 34A high dV/dt Diode Max247 STP32MD50 STP32MD50 STP32MD50 STP32MD50 Mosfet 500V 320mOhm TO220 (Multi-Drain Power MES Technology) STTAxx06 / 12 DEVICES MAIN FEATURES Power Factor Corrector L4981A/B L4981A/B L4981A/B L4981A/B High Efficiency Power Factor Controller - Frequency modulation & Load feedforward STTH806TTI STTH806TTI STTH806TTI STTH806TTI Dedicated Boost Diode - hyperfast and extreme low Irm STP/U/WxxNB50/60 500V/600V
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv2-v1.htm
STMicroelectronics 20/10/2000 11.75 Kb HTM motdrv2-v1.htm
/20A high dV/dt Diode TO-247 STY34NB50 STY34NB50 STY34NB50 STY34NB50 Mosfet 500V 34A high dV/dt Diode Max247 STP32MD50 STP32MD50 STP32MD50 STP32MD50 Mosfet 500V 320mOhm TO220 (Multi-Drain Power MES Technology) STTAxx06 / 12 DEVICES MAIN FEATURES Power Factor Corrector L4981A/B L4981A/B L4981A/B L4981A/B High Efficiency Power Factor Controller - Frequency modulation & Load feedforward STTH806TTI STTH806TTI STTH806TTI STTH806TTI Dedicated Boost Diode - hyperfast and extreme low Irm STP/U/WxxNB50/60 500V/600V
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv3-v2.htm
STMicroelectronics 31/10/2000 11.6 Kb HTM motdrv3-v2.htm
/20A high dV/dt Diode TO-247 STY34NB50 STY34NB50 STY34NB50 STY34NB50 Mosfet 500V 34A high dV/dt Diode Max247 STP32MD50 STP32MD50 STP32MD50 STP32MD50 Mosfet 500V 320mOhm TO220 (Multi-Drain Power MES Technology) STTAxx06 / 12 DEVICES MAIN FEATURES Power Factor Corrector L4981A/B L4981A/B L4981A/B L4981A/B High Efficiency Power Factor Controller - Frequency modulation & Load feedforward STTH806TTI STTH806TTI STTH806TTI STTH806TTI Dedicated Boost Diode - hyperfast and extreme low Irm STP/U/WxxNB50/60 500V/600V
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv2-v2.htm
STMicroelectronics 31/10/2000 11.74 Kb HTM motdrv2-v2.htm
Diode Module Soft Start - Insulated Thyristor 30.55A Pre-Regulator L4981A/B L4981A/B L4981A/B L4981A/B STP/U/W/Y/E xx NA 50/60 STTAxx06D / P / TV STE30NA50-DK STE30NA50-DK STE30NA50-DK STE30NA50-DK High Efficiency Cont. Mode Power Factor UC384xA/B Power Switch 1000V, 36A / 1000V, 72A - ISOTOP Mosfet 500V, 53A / 900V 26A - ISOTOP Mosfet 500V 20A - TO247 Mosfet 500V 30A Max247 Turboswitch A - Ultra Fast Diode soft recovery Industrial Application Un-Interruptable Power Supply Power Converter Block
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STMicroelectronics 14/06/1999 4.77 Kb HTM b8-v1.htm
STY34NB50 STY34NB50 STY34NB50 STY34NB50 Mosfet 500V 34A Max247 STTAxx06 P/D 600V Turboswitch A - Ultra Fast Diode UN-INTERRUPTABLE POWER SUPPLY STMicroelectronis SOLUTIONS Power Converter Block Diagram POWER SUPPLY EQUIPMENT BATTERY CHARGER for NiCD, NiMH, Li-Ion UN-INTERRUPTABLE POWER SUPPLY SELECTION Thyristor - Diode Module BTW68-xxx / BTW69-xxx Soft Start - Insulated Thyristor
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STMicroelectronics 20/10/2000 14.33 Kb HTM powsup3-v1.htm
: less Si-Area, Low Cgs, high dV/dt Turboswitch Ultra Fast Diode DO220/SOD93 DO220/SOD93 DO220/SOD93 DO220/SOD93 /ISOTOP 8A, 2x300V Hyperfast UN-INTERRUPTABLE POWER SUPPLY STMicroelectronics SOLUTIONS Power Converter Block Diagram POWER SUPPLY EQUIPMENT BATTERY CHARGER for NiCD, NiMH, Li-Ion UN-INTERRUPTABLE POWER SUPPLY SELECTION Rect. Bridge - Thyristor - Diode Module BTW68-xxx / BT69-xxx Soft Start
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STMicroelectronics 16/01/2001 11.92 Kb HTM powsup3.htm
STY34NB50 STY34NB50 STY34NB50 STY34NB50 Mosfet 500V 34A Max247 STTAxx06 P/D 600V Turboswitch A - Ultra Fast Diode UN-INTERRUPTABLE POWER SUPPLY STMicroelectronics SOLUTIONS Power Converter Block Diagram POWER SUPPLY EQUIPMENT BATTERY CHARGER for NiCD, NiMH, Li-Ion UN-INTERRUPTABLE POWER SUPPLY SELECTION Thyristor - Diode Module BTW68-xxx / BTW69-xxx Soft Start - Insulated Thyristor
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STMicroelectronics 31/10/2000 14.33 Kb HTM powsup3-v2.htm