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Part Manufacturer Description Datasheet BUY
HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil
HFA3101B Intersil Corporation 6 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SOIC-8 visit Intersil
HFA3101B96 Intersil Corporation 6 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SOIC-8 visit Intersil
HFA3135IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6 visit Intersil

high frequency transistor

Catalog Datasheet MFG & Type PDF Document Tags

MRF587

Abstract: MRF587 The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz Designed , Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz M/A-COM Products Released - Rev. 07.07 , Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz M/A-COM Products Released - Rev. 07.07 , Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz M/A-COM Products Released - Rev. 07.07 , Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz M/A-COM Products Released - Rev. 07.07
M/A-COM
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500MH

HD81504

Abstract: hitachi pbx [H8/510], etc Transmit buffer Mixer High frequency transistor High frequency transistor GaAs MES FET VCO High frequency transistor Variable capacitance diode IF PLL frequency synthesizer , ) [PF0140 series] (for GSM) [PF0231] (for NADC) Receive amp for LNA High frequency transistor HEMT , ], etc [H8/510, 536], etc M ixer High frequency transistor GaAs MES FET LNA + 1st mixer VCO G a A sIC High frequency transistor Variable capacitance diode PLL frequency synthesizer Modem
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HA22004 HD64530 HD81504 hitachi pbx HD63084 HD64941 PF0049A HA22002 HA22003 HA22006 HA23001 HA22005

73412

Abstract: NE64535 . 3-48 Medium Power Silicon High Frequency Transistor. 3-57 Medium Power Silicon High Frequency Transistor , . 3-103 NPN Silicon High Frequency Transistor , . 3-103 Super Mini-Mold High Frequency Transistor , . 3-103 NPN Silicon High Frequency Transistor
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NE02135 NE64535 73412 CHIP transistor 348 Transistor 120 NE68039 NE46134 NE85634 NE46734 NE85619 NE68119 NE68519

high frequency transistor

Abstract: S21C2 OSC-0.3CP NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE .138 2L PILL DESCRIPTION: The OSC-0.3CP is a High Frequency Transistor designed for C Band Oscillator Applications. 0.095 0.105 0.023 0.027 FEATURES: · POUT = 320 mW Typ. at 7.5 GHz · Gold Metalization · Hermetic Ceramic Package B E 0.095 0.105 MAXIMUM RATINGS IC 225 mA VCB 25 V PDISS 5.0 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC JC 30 OC/W
Advanced Semiconductor
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S21C2 high frequency transistor ASI10819
Abstract: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG Dimensions are in mm FEATURES: â'¢ POSC = 630 mW Typical at 7.5 GHz â'¢ Omnigoldâ"¢ Metallization System B C MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7 W @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C θJC 18 °C/W E Advanced Semiconductor
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2n4427

Abstract: transistor 2N4427 2N4427 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS 400 mA IC VCE 20 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C JC 50 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 20 BVCER
Advanced Semiconductor
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transistor 2N4427 2N4427 equivalent

MRF5943C

Abstract: high frequency transistor MRF5943C NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF5943C is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCEO 30 V VCBO 40 V VEBO 3.5 V PDISS 1.0 W @ TA = 25 °C 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C JC 125 °C/W 1 = Emitter 2 = Base 3 = Collector NONE CHARACTERISTICS SYMBOL TA = 25 °C TEST CONDITIONS
Advanced Semiconductor
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high frequency transistor

Abstract: 2SC2952 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 C TJ -65 to +200 C TSTG -65 to +200 C O O O 1 = Emitter 2 = Base 3 & 4 = Collector (Case) O JC 50 C/W CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC =
Advanced Semiconductor
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S21E NPN silicon high frequency transistor

high frequency transistor

Abstract: TP2314A TP2314A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 (CE) DESCRIPTION: The TP2314A is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications,With Emitter Grounded to Case. MAXIMUM RATINGS I 400 mA V 16 V PDISS 5.0 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC JC 1 = COLLECTOR 2 = BASE 3 = EMITTER O 35 C/W CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL
Advanced Semiconductor
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LT1001A

Abstract: transistor 335 LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B C 45° ØA ØD DESCRIPTION: E The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F H G MAXIMUM RATINGS 200 mA IC DIM inches / mm inches / mm .200 / 5.080 A 20 V VCE MAXIMUM MINIMUM .045 / 1.140 .028 / 0.720 .034 / 0.860 D O 2.5 W @ TC = 50 C .029 / 0.740 C .335 / 8.510 .370 / 9.370 E
Advanced Semiconductor
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transistor 335

2SC1252

Abstract: 2SC*1252 2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2SC1252 is a High Frequency Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. PACKAGE STYLE TO-39 FEATURES INCLUDE: · High Gain -17 dB Typ. @ 200 MHz · Low NF - 3.0 dB Typ. @ 200 MHz · Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 45 V VCE 25 V PDISS 5 W @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C JC 35 °C/W CHARACTERISTICS SYMBOL 1 = Emitter 2 = Base
Advanced Semiconductor
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2SC*1252

2N3866A

Abstract: 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N3866A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 5.0 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C O O O O O 1 = Emitter 2 = Base 3 = Collector O JC 35 C/W CHARACTERISTICS SYMBOL NONE O TC = 25 C TEST CONDITIONS BVCEO BVCER IC = 5.0 mA BVEBO
Advanced Semiconductor
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2N3866

HFA3046

Abstract: pnp vhf transistor m b e r 3 0 7 6 .1 0 Ultra High Frequency Transistor Arrays The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor , 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer , for maximum application flexibility. Monolithic construction of these transistor arrays provides close , amplifiers (request AnswerFAX document 99315). Features · NPN Transistor (fj
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pnp vhf transistor NPN PNP Transistor Arrays soic transistor HFA3046B HFA3096B HFA3127B HFA3128B

ultra low noise NPN transistor

Abstract: Transistor Arrays s o · · HARRIS S E M I C O N D U C TJM K Hm 3046, HFA3096, HFA3127, HFA3128 Ultra High Frequency Transistor Arrays Description 70 The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor's com plem entary bipolar UHF , types exhibit low noise (3.5dB), making them ideal for high frequency am plifier and mixer applications , for maxim um application flexibility. Monolithic construction of these transistor arrays provides
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ultra low noise NPN transistor Transistor Arrays PNP monolithic Transistor Arrays UHF pnp transistor RF TRANSISTOR 10GHZ low noise

LT1839

Abstract: 120Vmin OD^MEll b â  MOTb The RF Line NPN Silicon High Frequency Transistor . specifically designed for CRT driver applications requiring high frequency and high voltage, such as high resolution color graphics video monitors. â'¢ High Voltage â'" V(br)CBO = 120VMin â'¢ High Cutoff Frequency â'" fT = 1000 MHz , MHz MIN HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Un , ) Ccb â'" â'" 2.5 pF FUNCTIONAL TESTS Cutoff Frequency (VC£ = 10 V, lc - 80 mA, f = 250 MHz) fr 1 - -
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LT1839 120Vmin LG CRT monitors lg 120VM G0T4212
Abstract: m 2N5943 \ \ NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 S V M DESCRIPTION: DIMENSIONS ! MAX. MIN. MAX. 4>a The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. MIN. 0.190 0.210 4.83 533 6.60 INCHES MILLIMETERS A 0240 0.260 6.10 -
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2N5943

Abstract: 2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 1.0 W @ TA = 25 C O 3.5 W @ TC = 25 C O O O O O TJ -65 C to +200 C TSTG -65 C to +200 C JC 125 C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR O CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICEO ICBO hFE VCE(SAT) VBE(SAT) TEST
Advanced Semiconductor
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2SC2952

Abstract: high frequency transistor 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-33 DESCRIPTION: The 2SC2952 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC TSTG -65 to +200 OC JC 50 OC/W CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 1.0 mA 20 V BVCBO IC = 100 A 30 V
Advanced Semiconductor
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S21E2

MRF1001A

Abstract: high frequency transistor MRF1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C JC 175 °C/W 1 = Emitter 2 = Base 3 = Collector NONE CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC
Advanced Semiconductor
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SD1006

Abstract: SD1006 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI SD1006 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCEO 30 V VCBO 50 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C JC 50 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR NONE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICEO hFE ft Cob Cib NFNB NFBB GVE XMOD 2NDO TC = 25 °C
Advanced Semiconductor
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