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TESTPN-SJA Texas Instruments Obsolete OPN-TEST visit Texas Instruments
TMS320TEST1000 Texas Instruments TMS320TEST Test Generic visit Texas Instruments
ADVANCED_BQMTESTER Texas Instruments Texas Instruments Advanced bqMTester Multi-Station Test and Program Board visit Texas Instruments
TMDX3200D6416A Texas Instruments Test Evaluation Board visit Texas Instruments
TMDX3260C6416 Texas Instruments C6416 Test & Evaluation Board visit Texas Instruments
X9520B20I-AT1 Intersil Corporation DIGITAL POTENTIOMETER, PBGA20, XBGA-20 visit Intersil

hi pot test pcb

Catalog Datasheet MFG & Type PDF Document Tags

CHOKE 0.6uH

Abstract: smd transistor NJ 1:1 +/- 2% 100Khz 4.0V pk Hi ­ Pot 1.5KV 1Sec ISDN Line Transformer Tx Measurement , ) 0.6uH Max 100Khz 0.1V Turns Ratio 1:1 CT +/- 2% 100Khz 4.0V pk Hi ­ Pot 1.5KV , Mode Choke Measurement Value Tolerance Test Parameters Inductance (Tip) 37.8uH +/- , [7.62] PACKAGING 0.039 [1.00] 0.433 [11.00] Recommended PCB Layout Tape Format Tape , DIRECI N FEED T O OF COVR AP E T E 65 WIDE Ø1 .50 20 .00 2.0 0 +/- 0.15 4.0 0
Bel Fuse
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smd fuse x

Abstract: ) Inductance (Ring) DCR (Tip) DCR (Ring) Value 37.8uH 37.8uH 0.05R 0.05R Tolerance +/- 30% +/- 30% Max Max Test , ) DCR (Chip) I(leakage) Turns Ratio Hi ­ Pot Value 1.2mH 1.2mH 0.5R 0.5R 600uH 1:1 Tolerance Min Min Max Max Max +/- 2% 100Khz 0.1V 100Khz 4.0V pk 1.5KV 1Sec Test Parameters 10Khz 0.1V " ISDN Line , ­ Pot Value 1.2mH 1.2mH 0.5R 0.5R 600uH 1:1 CT Tolerance Min Min Max Max Max +/- 2% 100Khz 0.1V , Front View 42.5 Max Bottom View 1 6 7 8 13.0 MAX SEATED HEIGHT Recommended PCB Layout
Bel Fuse
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3.5 digit dpm

Abstract: 3.5 digits lcd display low bat V+ + 11 XDP Vin BAT 9 - TEST Vref BC 237 - V- 470K Driving , closed + 8 V+ 3 IN HI 1M 4 5 Normal 2 6 5 V+ IN HI IN LO REF HI 8 1M V+ 6R2 10nF Out 2 IN LO 4 REF HI 5 REF LO V1 Check Link REF is closed + Æ Snap-in , - 7660 5 3 + - 8 V+ V+ IN HI Check Link REF is closed + 0-200mV IN LO - , g REF LOW V+ GND TEST BAT XDP 17.5 (0.69) 11 ° REF Hi f e 1 h
RS Components
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dpm 116

Abstract: hi pot test pcb ) - DPM 116 Specification IN HI (7) + 2V 20V 200V 2kV 200uA 2mA 20mA 200mA , 7 - 8 ±200mV V+ V+ ±200mV IN HI 6 V+ 7 IN HI + 8 - 510K 7 , a floating voltage source of 200mV full scale. 6 V+ 7 IN HI + V1 8 IN LO R= 0.2 IFSR , . Specifications liable to change without prior warning 6 V+ + 7 IN HI 8 IN LO - IN HI 8 IN LO , + V+ 100K 6R2 + 11 REF HI 9 COM V5 V+ Check Link 2 is OPEN. 5K SET 8 ZERO
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transistor 2030

Abstract: 2030 transistor CURRENT CAP, 8.2pF, 0805, 100V,"U" SERIES CAP, 8200pF, 0805, 50V,TEMP STABLE PCB, .010 THK TFG, TEST FIXTURE ALUM BASEPLATE, TEST FIXTURE BRACKET, MOUNT, BIAS POT #2 SPLIT LOCKWASHER SS SCREW, 2-56 SOC HD 3 , Tstg Tj Value 65 +/- 20 87.5 0.5 -65 to +150 200 Unit Volts Volts Watts W/C C C Part Number Ordering , , Idq= 225mA Frequency MHz 1800 1860 1930 1960 1990 SP-2030 Preliminary Datasheet Zin Ohms 1.3 + j 0.75 1.7 + j 1.4 2.6 + j 2.0 3.2 + j 2.1 3.9 + j 2.0 Zin Ohms 1.0 + j 1.8 1.2 + j 2.5 1.5 + j
Stanford Microdevices
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transistor 2030 2030 transistor potentiometer 1k ohm 1/16W MMBTA64

CAP ALUM F 105

Abstract: 2030P , 0805, 100V,"U" SERIES CAP, 8200pF, 0805, 50V,TEMP STABLE PCB, .010 THK TFG, TEST FIXTURE ALUM BASEPLATE, TEST FIXTURE BRACKET, MOUNT, BIAS POT #2 SPLIT LOCKWASHER SS SCREW, 2-56 SOC HD 3/16 SS 4-40 PAN HD , Temperature Range Operating Junction Temperature Symbol B V d ss B V g ss Pd Tstg Tj Value 65 +/- 20 87.5 0.5 , MHz 1800 1860 1930 1960 1990 SP-2030P Preliminary Datasheet Zin Ohms 1.3 + j 0.75 1.7 + j 1.4 2.6 + j 2.0 3.2 + j 2.1 3.9 + j 2.0 Zin Ohms 1.0 + j 1.8 1.2 + j 2.5 1.5 + j 3.4 1.6 + j 3.8 1.8 + j
Stanford Microdevices
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CAP ALUM F 105 2030P

PD-23

Abstract: 8P10C- '"2),(J1â'"J2),(J3â'"J6)= 1.0 OHMS MAXIMUM PINS:(3â'"6)=1.2 OHMS MAXIMUM 4. HI POT: PINS(1,4,2)T0(J 1 ,J2)= , ¨- ¿To o a o o Y< 8.89 gu lO O Ojg OOjOOO OOjOOO OOjO ^-I a 13,98 .1. 13,98 1 13,98 19- D1 + - -o o °D2 D3à â'"D4 7.85 12.93 + - o o o o + - 53.34 J o < I 'f 4 01.60(3) / 00.90(40) a ^ o el + - o o o o + - , SUGGESTED PCB LAYOUT TOP VIEW 12.93 NDTEi 1. MATERIALS' HDUSING-PBT POLYESTER UL94V-0 MIXED GLASS FIBER , J5 J7 J8 TEST NDTES:(25±5*C) 1 .TR:(100KHz,0.1V); PINS:(1-2):(J1-J2)= 1:1 ±3% PINS:(3â'"6):(J3â'"J6
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PD-23 8P10C- XPJG-1-04-8A-G34-4-PD23 100KH 1500VAC 100MH 8P10C

T73 relay

Abstract: l512fy131 SPEEDPOT WIPER (red lead) -6 SPEEDPOT HI (white lead) MAX -5 + FIELD -4 -ARMATURE / - FIELD IR , DYNAMIC BRAKING Two pot operation is done using two 10K ohm speed potentiometers in parallel (both HI , to follow tachometer voltage. P1-7 POT WIPER + 6 VDC at BASE SPEED (3 VDC at 1000 RPM for , ) The Common of the SPDT switch is connected to control pot HI and is switched between Speedpot Hi and , THE WIRING TO 5% OF THE LINE VOLTAGE AT FULL LOAD. 3) +ARM: Connect to plus (+) Armature wire on
Dart Controls
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T73 relay l512fy131 275v G-mov L512FY131 gentron 10k trimpot schematic diagram 180v dc motor speed controller lM358 13DVA 15DVA 50/100V 100/200V 700/COMMUTROL 36VDC

hi pot test sheets

Abstract: HI-8586PSIF ) PCN INFORMATION PCN # Title Contact: 0704 ARINC 429 Line Driver Die Change for HI-8585 & HI , Date Code Other CHANGE TYPE Design Wafer Fab Site Assembly Site Test Site Electrical Specification Wafer Fab Material Assembly Material Test Process Mechanical Specification Wafer Fab Process Assembly , HI8595 for all HI-8585 & HI-8586 product REASON FOR CHANGE: 1. Replace the zener diode-based voltage , drift or variation during exposure to temperature extremes encountered during PCB solder re-flow
HOLT Integrated Circuits
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HI-8585PSI HI-8585PST HI-8585PSTF HI-8586PSIF hi pot test sheets HI8586PSM 8586PDT HI-8585 HI-8586 HI8590 MIL-STD-883 HI-8585PSIF

potentiometer 1k ohm

Abstract: ansi y32.2 CURRENT PCB, SP2055EB TEST FIXTURE, .010 TFG BRACKET , MOUNT, BIAS POT BASEPLATE, SP2055EBP #2 SPLIT , ) Electrical Characteristics Symbol Parameters: Test Conditions: Z0 = 50 Ohms Applications · CDMA, W-CDMA , Characteristics Symbol Parameters: Test Conditions: Input Capacitance (Vds=26V, Vgs=0, Freq=1Mhz) (*) Input is , Crss pF - 2.5 - RF and Functional Tests Symbol Parameters: Test Conditions: Linear , -30 -28.5 VSWR :1 5 - - Thermal Characteristics Symbol Tjc Parameters: Test
Stanford Microdevices
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ansi y32.2 potentiometer 1k ansi y32 200 ohm resistor TRANSISTOR n 522 TORX1 SP-2055P 220X250

potentiometer 1k ohm

Abstract: 7J23 CURRENT CAP, 2.7pF, 0805, 100V, HI CURRENT CAP, 3.3pF, 0805, 100V, HI CURRENT PCB, SP2055EB TEST FIXTURE , (Watts) Electrical Characteristics Symbol Parameters: Test Conditions: Z0 = 50 Ohms Applications · , Characteristics Symbol Parameters: Test Conditions: Input Capacitance (Vds=26V, Vgs=0, Freq=1Mhz) (*) Input is , Crss pF - 2.5 - RF and Functional Tests Symbol Parameters: Test Conditions: Linear , -30 -28.5 VSWR :1 5 - - Thermal Characteristics Symbol Tjc Parameters: Test
Stanford Microdevices
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7J23 SP-2055
Abstract: N N E C T O R S O LD E R SIDE 1CT:1CT MD(0)+ P11 O O J1 MX(0)+ TEST NOTES:(25Â , OOKHz, 100mV,8mA, DC Bias) 100% PINS:(P8,P9),(P3,P2),(P4,P5),(P11,P10)=350uH MINIMUM MD(1)+ P4 O 1CT:1CT I a a O J3 MX(1)+ 3. DCR: 100% PINS:(P8,P9),(P3,P2),(P4,P5),(P11 ,P10)=1,0Q MAXIMUM PINS:(J1,J2),(J3,J6),(J4,J5),(J7,J8)=1.0Q MAXIMUM O J6 MX(1 )- X 4. HI POT: 100% PINS , NOTES: RECOMMENDED P.C.B. LAYOUT 1. MATERIALS: HOUSING: HIGH TEMP. THERMOPLASTIC, PBT, UL94 V -
OCR Scan
A60-112-200P471 A60-113-200P471 A60-114-200P471 2002/95/EC 2002/96/EC 300KH

signal 11uA incremental for TTL

Abstract: ET2010 the test PCB. C7 100nF VCC PSIN PSIN VCC, VDD C8 100nF VDD iC-NV SIN , processing Sensor bridge calibration supportable by analog/digital test signals Low power consumption from , sensor systems PACKAGES TSSOP20 BLOCK DIAGRAM VCC PSIN VDD SIN + RCLK TRANSITION DISTANCE PRESET - - NSIN + A INPUT SIN PCOS B + Z - - NCOS COS + PZERO TRANSITION DISTANCE CONTROL CONVERSION CORE INPUT COS + NZERO
iC-Haus
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signal 11uA incremental for TTL ET2010 INTERPOLATOR SIN COS so20w G003 G008 D-55294
Abstract: CURRENT 2 1 PC BOARD PCB, SP2055EB TEST FIXTURE, .010 TFG 1 2 HARDWARE BRACKET , Multi-Carrier Applications Parameters: Test Conditions: Zn = SO Ohms Units Min. Typ. Max , A C Characteristics Symbol Parameteis: Test Conditions: Units IVfin. Typ. Ciss , RFand Functional Tests Symbol Parameters: Test Conditions: Gplin Linear Power Gain,Two Tone , =425mA, P EP=55W ) :1 5 - - Parameters: Test Conditions: Units Min. Typ. Max -
OCR Scan

TRANSISTOR c2324

Abstract: CURRENT 2 1 PC BOARD PCB, SP2055EB TEST FIXTURE, .010 TFG 1 2 HARDWARE BRACKET , Multi-Carrier Applications Parameters: Test Conditions: Zn = SO Ohms Units Min. Typ. Max , Characteristics Symbol Parameteis: Test Conditions: Units IVfin. Typ. Ciss Input Capacitance , Symbol Parameters: Test Conditions: Gplin Linear Power Gain,Two Tone (Vds=26V, ldq=425mA, PEP , Parameters: Test Conditions: Units Min. Typ. Max. Thermal Resistance, Junction to Case °c
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TRANSISTOR c2324

alps potentiometer

Abstract: alps rs6011 ., mounted to chassis with screws. © 0.5 kgf*cm over : in case of pot., mounted to P.C.B. only with terminals. O 2 kgf*cm over : In case of pot., mounted to P.C.B. with both terminals and mounting plate. M 5 , voltage. Maximum operating voltage : A.C.150V » D-c- ' 10v 6- Dielectric test : Units shall be designed , i i t 1 -n ^ 1 ' -f-H- -j-i- -ff hi- -I. â'¢ î . â'" f-^-T- ^- ., ,i , TERM. 1 80 TOLERANCE 10-25 + 100 TERM.3 APPD. /I zf.%?J DSGD. 4f2Ûl NAME RESISTANCE TAPER
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alps potentiometer alps rs6011 ALPS potentiometer 250 potentiometer alps SSV96-0312 RS6011Y14 Q0447683M RS6011YH 4S0001-201 S6028N404A

D1RFRD006

Abstract: (8 - 7): 350 uH MIN. 5. Hi pot TEST lnput(1 â'" 2) to O u tp u t(1 â'" 2) 1500VAC, 60 ln p u t(3 , cito r. 2. Size Sam e As R J - 4 5 M odular J ack To Save PCB B oard Space. 3. Reduce EMI R adiation , . 5. TRANSFORMER PCB MATERIAL F R -4 . GREEN COLOR. 6. RJ CONTACT MATERIAL PHOSPHOR BRONZE t= 0 .3 , SELECTIVE GOLD PLATING. 2: TAILS TIN OVER NICKEL. 10 OPERATING LIFE 7 5 0 CYCLES MIN. 11 PCB RETENTION PRE-SOLDER 1 LB MIN. 12 PCB RETENTION POST-SOLDER: 10 LBS MIN. 13. LED COLOR : OPTION LED
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D1RFRD006 C5210EH C5191EH 10OKH

"power factor correction" schematic PIC

Abstract: stereo to 5.1 converter circuit diagram circuitry to power and test all of its compatible audio power amplifier EVMs and thus eliminate the need , mode/mute jumper circuitry (JP6, JP7, JP8). To begin with, set JP7 to Lo, JP8 to Hi, and JP6 to Mode , Amplifier EVM Circuit Component Placement +5V Shutdown GND R5 S1 + C6 C3 C5 DL R1 , mode. u Gain Control Pot R4 Lower gains produce better distortion performance (see the TPA4861 , Connections Figure 2. TPA4861 EVM Schematic Vdd 2.7 to 5.5 V S1 Shutdown (+ VDD to Mute) Shutdown
Texas Instruments
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C3216X5R1A225 TPA4860 stereo to 5.1 converter circuit diagram hear AUDIO AMPLIFIER SCHEMATIC tpa4861 stereo audio amplifier 4 w 4 ohm audio amplifier service diagram troubleshooting manual SLOU004 SLOP097 TPA4681 3323P-1-204 ECS-TOJY106R GRM42-6Y5V105Z16BL

FR07

Abstract: pot for wire (AWG 20 max) â'¢ straight solder pin for PCB â'¢ right angle solder pin for PCB These , iiiiiiiiii Termination style (see page 29) 85 : solder pot 86 : straight solder pin for PCB 87 : Right angle solder pin for PCB Guides and jackscrews (see page 34) 00 ; without guides and jackscrews (1 , for PCB i :>si O S I m max conductor .045 (1.15) dia. Solder pot .161 (4.1 , '¢ â'¢ Test voltage at sea level: Operating voltage (sea level) : 7.5 A â'¢ â
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FR07 MIL-C-28748 MIL-M-14SDG-F

INTERPOLATOR SIN COS

Abstract: G003 and bottom layout of the test PCB. C7 100nF C8 100nF VCC PSIN PSIN VDD iC-NV , VDD SIN + iC-NV RCLK NSIN + A INPUT SIN PCOS B + Z - NCOS COS + CONVERSION CORE INPUT COS PZERO + NZERO DIGITAL PROCESSING VCC VCC , Current in VDD fin()= 200kHz; A, B, Z open 004 Vc()hi Clamp Voltage hi at NSIN, PSIN, NCOS, PCOS, NZERO, PZERO, SG1, SG0, ROT, SF1, SF0, VREF, RCLK Vc()hi= V() -VCC; I()= 1mA, other pins open
iC-Haus
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