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JAN2N3055 Microsemi Corporation Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy
UNRF2A100A Panasonic Electronic Components TRANS NPN W/RES 35 HFE ML3-N2 visit Digikey Buy

hfe 2n3055

Catalog Datasheet MFG & Type PDF Document Tags

2N3055 power amplifier circuit

Abstract: 2n3055 applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Region Safe Operating Area http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - 20 5.0 70 - Collector­Emitter , Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) fT 2.5 - MHz hfe 15 120 - *Small­Signal Current Gain
ON Semiconductor
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2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2n3055 circuit 2N3055 typical applications 2N3055 MJ2955 204AA 2N3055/D

2N3055

Abstract: DC variable power with 2n3055 Area http://onsemi.com 36 2N3055, MJ2955 500 300 200 hFE , DC CURRENT GAIN 25°C 100 70 50 30 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO
ON Semiconductor
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DC variable power with 2n3055 power transistor 2n3055 2N3055 transistor 2n3055 amplifier 2n3055h mj2955 safe operating area

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Features http://onsemi.com â'¢ DC Current Gain â' hFE = 20â'70 @ IC = 4 Adc â , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE â
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , switching and amplifier applications. *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - Collector­Emitter , MHz *Small­Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120
Motorola
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2N3055 MOTOROLA MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055/MJ2955 pin out TRANSISTOR 2n3055

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055, MJ2955 , 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: · Power dissipation - PD = 115W at TC = 25°C. · DC current gain hFE = 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics
Multicomp
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2n3055 malaysia 2n3055 pnp 2n3055 IC 2N3055 curve MJ2955 TRANSISTOR 2n3055 collector characteristic curve

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 , general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device · DC Current Gain - hFE = 20­70 @ IC = 4 Adc · Collector­Emitter Saturation Voltage - · Excellent , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , ) hFE - 20 5.0 70 - Collector­Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc
ON Semiconductor
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2N3055 power circuit 2n3055 equal 2N3055 JAPAN MJ2955 mexico 2N3055-1 value of 2n3055

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram 2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet mj2955 TO-3 2N3055 transistor equivalent

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 300 hFE , DC CURRENT GAIN 200 100 70 50 , 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20-70 @ IC , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package
ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055

2N3055

Abstract: 2n3055 pin SavantIC Semiconductor Product Specification 2N3055 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20­70 @ IC = 4 Adc , Product Specification 2N3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 20 hFE-2 DC current gain IC=10A ; VCE=4V 5.0 Second breakdown collector current With
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2n3055 pin hfe 2n3055 2N3055 specification 2n3055 datasheet 2n3055 complement 2N3055 silicon

2n3055

Abstract: hfe 2n3055 Product Specification www.jmnic.com 2N3055 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 20­70 @ IC = 4 Adc , www.jmnic.com 2N3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 20 hFE-2 DC current gain IC=10A ; VCE=4V 5.0 Second breakdown collector current With base
JMnic
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2n3055 25 2N3055 equivalent

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Features http://onsemi.com · DC Current Gain - hFE = 20-70 @ IC = 4 Adc · Collector-Emitter , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - Collector-Emitter
ON Semiconductor
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pnp transistor 2N3055 2N30

2N3055

Abstract: 2n3055 motorola MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , switching and amplifier applications. *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - Collector­Emitter , MHz *Small­Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120
Motorola
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2N3055-D

2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC
ON Semiconductor
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OF transistor 2n3055 to-3 package

RCA 40636 transistor

Abstract: rca 40636 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe = 25-100 @> 450 mA f-p = 1.5 MHz typ. 40349 VCEV(susl - 160 V hFE = 30-125 ® 150 mA lT = 1.5 MHz typ. 2N5786 VCERlsus) â  45 V hFE â  20-100 @ 1.6 A ty - 1 MHz min. 40250 VCEVlsusl « 50 V hFE - 25-100 » 1.5 A fT - 1.2 MHz tvp. Pt-29W 2N5295 2NS296 VCER(sus> - 50 V hFE â  30-120 ® 1 A fj = 0.8 , -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70
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RCA 40636 transistor rca 40636 rca 2N3771 power circuit rca 40327 40636 rca 300W TRANSISTOR AUDIO AMPLIFIER ITO-391- ITO-220 ITO-2201 ITO-31 2N1482 2N6263

2n3055

Abstract: 2N3055 curve = |hfe| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E * -Bcndng VWre Limit , 25°C * DC Current Gain hFE = 20 ~ 70 @ ic = 4.0 A * VCE(sat) = 1.1 V (Max.) @lc = 4.0 A, lB = 400 mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , ://www.bocasemi.com 2N3055 NPN / MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , , VCE = 4.0 V) (lc = 10 A , VCE = 4.0 V ) hFE 20 5.0 70 Collector - Emitter Saturation Voltage (lc =
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npn 2n3055

pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , ) * hFE* Continental Device India Limited TEST CONDITION IC=200mA, IB=0 IC=200mA, RBE=100 VCE , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , =1.0 s,Nonrepetitive MIN 2.87 fT hfe IC=0.5A, VCE=10V, f=1MHz IC=1A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse
Continental Device India
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pin configuration transistor 2n3055 CDIL 2N3055 Transistor Mj2955 power transistor pin configuration transistor mj2955 J 2N3055 general purpose 2n3055 transistors C-120 MJ2955R 291201E

pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3055 NPN , ) * hFE* Continental Device India Limited TEST CONDITION IC=200mA, IB=0 IC=200mA, RBE=100 VCE , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , =1.0 s,Nonrepetitive MIN 2.87 fT hfe IC=0.5A, VCE=10V, f=1MHz IC=1A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse
Continental Device India
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transistor 2n3055 h parameters
Abstract: 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case , ) hFE VCE=4.0V, IC=4.0A VCE=4.0V, IC=4.0A hFE 5.0 hfe VCE=4.0V, IC=10A VCE=4.0V, IC , V 70 120 R1 (26-July 2013) 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER Central Semiconductor
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RCA 40313

Abstract: RCA 528 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe = 25-100 @> 450 mA f-p = 1.5 MHz typ. 40349 VCEV(susl - 160 V hFE = 30-125 ® 150 mA lT = 1.5 MHz typ. 2N5786 VCERlsus) â  45 V hFE â  20-100 @ 1.6 A ty - 1 MHz min. 40250 VCEVlsusl « 50 V hFE - 25-100 » 1.5 A fT - 1.2 MHz tvp. Pt-29W 2N5295 2NS296 VCER(sus> - 50 V hFE â  30-120 ® 1 A fj = 0.8 , -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70
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RCA 40313 RCA 528 RCA 40349 2n3773 rca 40349 2N6264 FE-20-100 2N6477 2N5491 2N5490 BUX67B

2N3055 power amplifier circuit

Abstract: 2N3055 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055 , Semiconductor isc Silicon NPN Power Transistors 2N3055 ELECTRICAL CHARACTERISTICS TC=25 unless , IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 5.0 mA hFE-1 DC Current Gain IC= 4A ; VCE= 4V 20 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 5.0 Second Breakdown Collector , Power Transistors isc Websitewww.iscsemi.cn 3 2N3055 INCHANGE Semiconductor
INCHANGE Semiconductor
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isc 2n3055 transistor transistor 2N3055 transistors 2n3055 isc MJ2955 transistor equivalent transistor 2n3055 2n3055 IC data sheet
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