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LMV242LDX/NOPB Texas Instruments Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller 10-WSON -40 to 85 visit Texas Instruments
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gsm 900 amplifier

Catalog Datasheet MFG & Type PDF Document Tags

IH33

Abstract: gsm 900 amplifier fechnoiogies Infineon CGY 98 GSM/PCN Dual Band Power Amplifier 1 1.1 Schematic of the CGY 98 PA Application Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1 .2. Each one uses a BFP 420 SIEGET® transistor for , 900 Amplifier Frequency Range Input Impedance Output Impedance Input Power Output Power Harmonics Rx noise Power 925 - 935 MHz 935 - 960 MHz Efficiency GSM 1800 Amplifier Frequency Range Input Impedance
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OCR Scan

j327

Abstract: MRF6522-60 Shown in Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier") VBIAS VDD , APPLICATION (As Shown in Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier , 900 Amplifier Schematic 50.00 mm 10 mm 6.20 mm 2.60 mm HOLES (FOR M2.5 SCREWS) PCB: GI180 , frequencies up to 1.0 GHz and specified for the GSM 925 ­ 960 MHz band. The high gain and broadband performance of these devices makes them ideal for large­signal, common source amplifier applications in 28
Motorola
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MRF6522-60 j327 motorola rf device data book 360B-04 MRF184 MRF6522
Abstract: pF (AVX ACCUP) 470 pF (NPO) 3.9 kâ"¦ 1 kâ"¦ ARCHIVED 2005 Figure 9. GSM 900 Amplifier , AN1670/D, â'60 Watts, GSM 900 MHz, LDMOS Twoâ'"Stage Amplifierâ') VBIAS VDD C4 C9 C6 C8 RF , APPLICATION (As Shown in Application Note AN1670/D, â'60 Watts, GSM 900 MHz, LDMOS Twoâ'"Stage Amplifierâ , industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 â'" 960 MHz band. The high , amplifier applications in 28 volt base station equipment. â'¢ Specified Performance @ 960 MHz, 28 Volts Motorola
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J294

Abstract: MRF184 (NPO) 3.9 k 1 k Figure 9. GSM 900 Amplifier Schematic 50.00 mm 10 mm 6.20 mm 2.60 mm , Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier") BIAS TUNING R1 C8 , 900 MHz, LDMOS Two­Stage Amplifier") VBIAS VDD C4 C9 C6 C8 RF INPUT R1 C2 C1 , for the GSM 925 ­ 960 MHz band. The high gain and broadband performance of these devices makes them ideal for large­signal, common source amplifier applications in 28 volt base station equipment. ·
Motorola
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J294

j327 transistor

Abstract: gsm 900 amplifier APPLICATION (As Shown in Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier , ACCUP) C7 C8, C9 R1 R2 2.2 pF (AVX ACCUP) 470 pF (NPO) 3.9 k 1 k Figure 9. GSM 900 , CIRCUIT APPLICATION (As Shown in Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier") BIAS TUNING R1 C8 C4 C2 C5 R2 MRF184 GSM/25 V C7 JJ Bouny 02/98 , industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 ­ 960 MHz band. The high
Motorola
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j327 transistor gsm 900 amplifier Arlon-GX-0300-55-22 MOTOROLA ELECTROLYTIC CAPACITOR motorola ups schematic j503 2001RF

gsm vco

Abstract: bfr93aw schematic Note No. 053 1.5 Parameter Supply Voltage Control Voltage Range GSM 900 Amplifier Frequency Range Input , CGY 98 GSM/PCN Dual Band Power Amplifier 1 1.1 Schematic of the CGY 98 PA Application Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and , 35 dBm POUT = 35 dBm RBW = 100 kHz 52 55 58 POUT = 35 dBm GSM 1800 Amplifier
Infineon Technologies
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gsm vco bfr93aw schematic k 3531 transistor EHT09097 BAS40-04 BFR93AW EHT09122 EHT09123 EHT09124

gsm 900 amplifier

Abstract: GSM vco POUT = 35 dBm ­ 75 ­ 81 dBm dBm RBW = 100 kHz GSM 900 Amplifier Frequency Range Input , CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Note No. 053 Application Board V1.2 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage , 32.5 dBm GSM 1800 Amplifier Frequency Range Input Impedance Output Impedance Input Power Output
Infineon Technologies
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BFP420 Transistor BFR 98 gsm gate control K 3264 transistor LQG21N pae800 C0603

GSM module circuit diagram

Abstract: GSM module BLOCK diagram PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications , ) 979-8902 www.eiccorp.com 1 PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER , MIN. LIMITS TYP. Frequency - GSM 900 880 Input Power - GSM 900 7 Output Power - GSM 900 35.0 Power Added Efficiency - GSM 900 52 Input Return Loss (50 Ohm) 15 Output Load Impedance 50 , time Po= -10 to 0dBm 1 Band Select GSM 900 Vbs 0.0 DCS 1800/PCS 1900 Vbs 2.0 Supply Voltage
EiC
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EGSM900 DCS1800 PCS1900 GSM module circuit diagram GSM module BLOCK diagram GSM/BA5 Amplifier SS-000423-000 880-915MH 1850MH

GSM LNA

Abstract: IBM REV 2.8 IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features · , /support/howtobuy.html Part Number Product IBM43RCLNA1115 SiGe 900 MHz GSM LowNoise Amplifier , all times. Page 1 of 6 IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with , Unconditional Page 3 of 6 IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain , SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Table 4. Pin Descriptions Pin Name
IBM
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GSM LNA IBM REV 2.8 gsm amplifier schematic IBM Microelectronics gsm amplifier circuit igc1

VA-PC 10

Abstract: DCS1800 PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications , ) 979-8902 www.eiccorp.com 1 PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER , MIN. LIMITS TYP. Frequency - GSM 900 880 Input Power - GSM 900 7 Output Power - GSM 900 35.0 Power Added Efficiency - GSM 900 52 Input Return Loss (50 Ohm) 15 Output Load Impedance 50 , time Po= -10 to 0dBm 1 Band Select GSM 900 Vbs 0.0 DCS 1800/PCS 1900 Vbs 2.0 Supply Voltage
EiC
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VA-PC 10 EIC 70 900MH AP-000513-000

lna gsm 900

Abstract: igc1 Preliminary Features IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain , Low-Noise Amplifier with Gain Control Preliminary Figure 2. SiGe 900 MHz GSM LNA Schematic 0.01uF VCC , 900 MHz GSM Low-Noise Amplifier with Gain Control . Table 3. AC Characteristics (VCC = 2.8Vdc , 6 IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Preliminary , November 21, 2001 Preliminary IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with
IBM
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lna gsm 900 IBM REV 2.8 Circuit sheet ibm rev 2.1

GSM 900 module circuit diagram

Abstract: ECM029 PRELIMINARY DATA SHEET ECM029 3V GSM POWER AMPLIFIER MODULE Features 3.5V Single Supply , SYMBOL PARAMETER MIN. LIMITS TYP. MAX. UNIT TEST CONDITION Frequency - GSM 900 880 Input Power - GSM 900 7 Output Power - GSM 900 35.0 Power Added Efficiency - GSM 900 42.0 48 Input Return Loss (50 Ohm , -000629-000 Revision A www.eiccorp.com 2 PRELIMINARY DATA SHEET ECM029 3V GSM POWER AMPLIFIER MODULE , 3V GSM POWER AMPLIFIER MODULE PACKAGE MARKINGS AND DIMENSIONS The ECM029 is a laminate based
EiC
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GSM 900 module circuit diagram GSM900 SS-000629-000 AP-000516-000

TRF7610

Abstract: TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 D , is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global , MOSFET POWER AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 schematic VD1/VD2 13 , AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 recommended operating conditions , AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 APPLICATION INFORMATION In all cases, a
Texas Instruments
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800-MH 1000-MH 900-MH

SI4210

Abstract: complete circuit diagram for a PA amplifier Si4300/4300T Power Amplifier GSM 900, DCS 1800 AND PCS 1900 MONOLITHIC POWER AMPLIFIER SYSTEM , DESCRIPTION The Si4300/4300T GSM Power Amplifier (PA) is the industry's smallest, high-performance PA solution , circuit consists of two amplification paths which supports GSM 900 and DCS 1800. The Si4300T supports GSM , Harmonic Filter RFOH Si4300/4300T GSM/GPRS POWER AMPLIFIER H I G H LY I N T E G R AT E D , No Yes Yes 5 2 Yes Yes Revolutionary Power Amplifier The Si4300/4300T GSM/GPRS Power
Silicon Laboratories
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SI4210 complete circuit diagram for a PA amplifier pa 900 amplifier GSM module circuit diagram free gsm power amp GPRS CIRCUIT DIAGRAM 4300/4300T 4300T 4300-DS 4300T-DS 4300-EVB 4300T-EVB

GSM module BLOCK diagram

Abstract: TQM7M5005H TQM7M5005H Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block Diagram , TX_EN GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005H is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS , efficiency ­ GSM 850 55%, GSM900 55%, DCS 49%, PCS 49%. · High EDGE efficiency ­ GSM 850 22%, GSM 900 22
TriQuint Semiconductor
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Power Amplifier Module for GSM GSM GPRS module gsm block diagram CLASS D POWER amplifier diagram 400KH

Power Amplifier Module for GSM

Abstract: GSM900 TQM7M5005 Advance Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block , Power Control TX_EN GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005 is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This , %, PCS 49%. · High EDGE efficiency ­ GSM 850 24%, GSM 900 24%, DCS 25%, PCS 25% · Positive supply , high GSM/GPRS efficiency. In EDGE mode, the Vramp pin provides a continuously variable bias control
TriQuint Semiconductor
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7M5004

Abstract: GSM module BLOCK diagram TQM 7M5004 Preliminary Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block , Select VRAMP Power Control Vbias (digital) GSM 850 / 900 IN GSM 850 / 900 Out Product Description The TQM 7M5004 is an extremely small (7x7x1.1mm3) multi-mode power amplifier module for GSM/EDGE , %, GSM 900 23%, DCS 25%, PCS 25% · Low Quiescent Current Mode for EDGE Pout , maintaining high GSM/GPRS efficiency. Two EDGE quiescent current states are provided to minimize current
TriQuint Semiconductor
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GSM 300

gsm Handset Circuit Diagram

Abstract: gsm transceiver (GSM 850/900/1800/1900 MHz) wireless handset amplifier module. Two sets of high harmonic-rejection matching filter circuits are designed and fabricated, one each for the GSM 850/900 MHz and GSM 1800/1900 , plastic-packaged module gave a rejection better than ­63 dBc for the GSM 850/900 MHz band at the fundamental , , while GSM 900 MHz and GSM 1800 MHz (Digital Cellular Services, DCS) RAJANISH, P. ONNO AND N. JAIN , the GSM 850/900 MHz band and 2.5 (nominal) to 50 for the GSM 1800/1900 MHz band. Multiple
M/A-COM
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gsm Handset Circuit Diagram gsm transceiver telephone handset circuit schematic diagram Roland e 38 schematic circuit diagram of 7436 ic WLAN chips

GSM module BLOCK diagram

Abstract: gsm module 900 TQM7M5005 Advance Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block , Power Control TX_EN GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005 is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This , high GSM/GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die , %, GSM 900 22%, DCS 25%, PCS 25% · Positive supply voltage ­ 3.0 to 4.5 V · 50 input and output
TriQuint Semiconductor
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gsm module 900

gsm block diagram

Abstract: GSM module BLOCK diagram TQM7M5005 Advance Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block , Logic GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005 is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS , %, GSM 900 22%, DCS 25%, PCS 25% · Positive supply voltage ­ 3.0 to 4.5 V · 50 input and output
TriQuint Semiconductor
Original
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