NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: *Noise measure 20.L|.rn (diode biased in thenegative resistance region) AEY13-Page 2 GERMANIUM TUNNEL DIODES AEYI3 AEYI5 AEYI6 APPROXIMATE EQUIVALENT CIRCUIT MECHANICAL 1. Recommendations for mounting in circuits Contact to the diode should be made by means of a resilient arrangement so that it is , GERMANIUM TUNNEL DIODES AEYI3 AEYI5 AEYI6 TENTATIVE DATA Germanium tunnel diodes for use as low , •o < o m o «S o Hg CJ o TYPICAL DIODE CURRENT PLOTTED AGAINST DIODE VOLTAGE r.tn>w7ii AEY13-Page ... | OCR Scan |
4 pages, |
tunnel diodes germanium diode junction capacitance AEY16 AEY15 AEY13 tunnel junction diode germanium diode tunnel diode germanium diode equivalent AEY13 abstract |
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| Abstract: EOsO JUDSON Germanium Detector Operating Notes 0.8 to 1.8 ¡im General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a photongenerated current source with shunt , respectively. Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph S) V -www-» R, a J â- ph - Rs = L = Current generated by incident photons Actual voltage across diode junction Detector junction ... | OCR Scan |
5 pages, |
OP-27 OPA111 J16-P1-R10M-HS GE PHOTODIODE J16TE high power 850nm ld J16P1R10M ge series capacitors Laser Diode 850nm 1300nm fw 02j PTW M connector J16-18A-R01M-HS J16-5SP-R02M-HS J16-5SP-R03M-HS J16TE abstract |
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| Abstract: E G 8c G JUDSON BTE J> 3CI30bD5 D0DDS13 D0DDS13 4 JUD J16 Series T-Ht-Hl Germanium Detector Operating Notes General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a , are described on pages 11-13. Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph © V â- VWWV1-° R, 1 J I h = Current generated by incident photons VD = Actual voltage across diode junction CD ... | OCR Scan |
4 pages, |
OP-27 OPA111 photodiode ge Photodiode, 1550nm NEP J16-P1-R10M-SC germanium photodiode PIN J16-18A-R250U-SC J16-5SP-R02M detector active area size nep J16P1R13M Laser Diode 850nm 1300nm J16-18A-R01M J16-8SP-R05M-SC D0DDS13 D0DDS13 abstract |
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| Abstract: equivalent power (NEP) of , useful gain, M, of at least 100 for silicon APDs, or 10-40 for germanium or InGaAs APDs. In addition , below the breakdown field of the diode. Figure 1 shows the reach-through structure patented by , overall system noise. Noise equivalent power (NEP) cannot be used as the only measure of a detector's , to 1000 for silicon APDs and is limited to M=30 to 40 for germanium and InGaAs APDs. 3. Selecting ... | Original |
8 pages, |
Si apd photodiode 800 nm PIN APD DIODE apd model Photodiode apd high sensitivity C30902S Ge APD geiger tube geiger apd germanium diode equivalent InGaAs apd photodiode photodiode pin alpha particles APD, laser, range, finder APD bias gain datasheet abstract |
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| Abstract: Germanium Tunnel Diodes @ TYPE TD-9 The General Electric TD-9 is a Germanium Tunnel Diode offering a , 5.0 Pf 4 2.5 4.5 4.5 xlO mho kmc kmc kmc AXIAL DIODE OUTLINE MO MAX. 3C JR1 _LI 095 MAX I 1 .020 + .002 -.00 1.000 _ MIN. -.100 MAX.- I.OOQ_ MIN. 1 .020 + .002 -.001 EQUIVALENT CIRCUIT ... | OCR Scan |
2 pages, |
Microwave detector diodes switch diode tunnel "tunnel diode" TD400 tunnel diode oscillator tunnel diodes 1N3714 1N3720 TD-9 General Electric 1N3719 "tunnel diode" oscillator oscillator tunnel diode 1N3712 TD400 abstract |
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| Abstract: excellent in compression ratio. For the sets of 6V VCC, it is recommended to use a germanium diode so that , the preamplifier cannot be masked. In this case, a germanium diode is connected across pins (7) and , germanium diode is connected across pins (7) and (12), the starting time can be made earlier, but the starting time can be made much earlier by using 2pcs. of germanium diode. 4. Power Supply for Radio's , Gain VG Maximum Output Voltage VO Input Resistance THD=1%, Playback 0.9 Equivalent ... | Original |
11 pages, |
TR22 TR17 TR13 germanium diode equivalent LA4160 ENN870D ENN870D abstract |
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| Abstract: silicon, the turn-on voltage of germanium and the speed of a Schottky diode majority carrier device. This device is intended for high volume, low cost applications, and is the beam lead equivalent of the HP 5082-2800 glass packaged diode. Applications High level detection, switching, or gating; logarithmic or , HEWLETT^ PACKARD COMPONENTS BEAM LEAD SCHOTTKY DIODE 5082-2837 Features LOW COST FAST SWITCHING HIGH BREAKDOWN Description The HP 5082-2837 is an epitaxial planar passivated Beam Lead Diode whose ... | OCR Scan |
2 pages, |
hp 2800 diode Germanium Schottky diode germanium diode equivalent PULSE SPOT-WELDING handling of beam lead diodes diode hp 2800 TK 2837 datasheet abstract |
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| Abstract: Features Automatic component identification: Bipolar Transistors MOSFETs Diodes Diode Networks , information. In particular, the section covering the analysis of diode junctions explains the displayed results. Page 3 diodes and diode networks The DCA50e will analyse almost any diode that is connected between any pair of test clips. Types of diode that can be analysed include: signal diodes, rectifier diodes, zeners and LEDs. The analyser will analyse the diode under test and identify it's two ... | Original |
8 pages, |
the transistor equivalent SK17 MN1604 germanium transistors NPN 6F22 DCA50e DCA50 datasheet abstract |
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| Abstract: (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized for , 10 K F = 10 GHz Planar Back (Tunnel) Diodes MBD Series Back Diode Perameters Diode Equivalent Circuit I 3mA LS PACKAGE VR Vv IV VF Ip Rj Cp V Cj RS 500A , ) 52 [1.321] Dia. 48 [1.219] 83 [2.108] Dia. 77 [1.956] CHIP ASSEMBLY The germanium planar ... | Original |
8 pages, |
"tunnel diode" wire bonding MBD2057-H20 tunnel diodes tunnel detector "back diode" MBD5057C18 MBD5057 MBD2057 MBD1057H20 "tunnel diode" tunnel diode specifications MBD3057 MBD1057-E28 datasheet abstract |
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| Abstract: start up under full load a reverse biased small signal germanium diode 1N91 can be added between pins , load the germanium power ``diode'' D1 has been added to the circuit Since the forward voltage drop of the germanium diode D1 is less than that of the silicon substrate diode of the LM340 LM340 the external , tantalum Germanium diode (using a PNP germanium transistor with the collector shorted to the emitter , Germanium diode TL H 7413 Â 18 Solid tantalum FIGURE 18 Tracking Dual Supply g 15V Assuming Q1 and ... | Original |
12 pages, |
LM340-15 LM340-5 AN-103 LM340K-5 pdf of IC LM324 NSL5027 NPN zener led nelson sensor light LM340T-15 AN-103 national 74137 30V variable tracking regulator LM340 voltage regulator silicon diode and germanium LM340 LM340 LM340 abstract |
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| diodes begot germanium diodes, which in turn begot silicon diodes, which then resulted in commercial International Rectifier - The Power Conversion Process International Rectifier, Power Semiconductor, Power Conversion, Product, Families, Topical, Product Information hexfet powertrain integrated circuit photovoltaic relay microelectronic relay diodes rectifiers inverters thyristors IGBT transistors because every watt saved is the equivalent of reducing the car's weight by one pound. In addition, power www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd000ae.htm |
International Rectifier | 06/10/1998 | 16.02 Kb | HTM | wcd000ae.htm |
| Devices such as diodes, rectifiers and thyristors that convert raw AC line power to appropriate DC levels loads on and off; and Output Devices such as Schottky and fast recovery diodes for regulating the companies to commercialize germanium rectifiers in 1954, and the first to introduce the first commercial zener diodes and solar cells in 1958. IR's 50 year legacy of power semiconductor technology firsts advances in power component miniaturization without impacting performance. Schottky Diodes IR www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd0000e.htm |
International Rectifier | 06/10/1998 | 21.01 Kb | HTM | wcd0000e.htm |
| insulator and that of a conductor. Semiconductors can be single elements such as silicon or germanium or /FALSE). BO/BI Book to Bill A trend indicator equivalent to the ratio between orders booked during the month ) Commission des Opérations de Bourse In France it is the equivalent of SEC - Stock Exchange Commission in the disc players, digital TV sets and many other applications. Diode The diode is a component with two terminals which conducts electricity in only one direction. ST produces high speed power diodes for use with www.datasheetarchive.com/files/stmicroelectronics/stonline/press/news/glossary-v2.htm |
STMicroelectronics | 14/06/1999 | 34.27 Kb | HTM | glossary-v2.htm |
| as silicon or germanium or compounds such as gallium arsenide or indium phosphide. In day to day A trend indicator equivalent to the ratio between orders booked during the month to orders delivered France it is the equivalent of SEC - Stock Exchange Commission in the USA. CODEC COder DECoder used in compact disc players, digital TV sets and many other applications. Diode The diode is a diodes for use with power transistors in industrial power control. Discrete component (discrete www.datasheetarchive.com/files/stmicroelectronics/stonline/press/news/glossary.htm |
STMicroelectronics | 20/12/2000 | 36.69 Kb | HTM | glossary.htm |
| that of a conductor. Semiconductors can be single elements such as silicon or germanium or compounds equivalent to the ratio between orders booked during the month to orders delivered (invoices sent out). If equivalent of SEC - Stock Exchange Commission in the USA. CODEC COder DECoder COMBO . Diode The diode is a component with two terminals which conducts electricity in only one direction. ST produces high speed power diodes for use with power transistors in industrial power control www.datasheetarchive.com/files/stmicroelectronics/stonline/press/news/glossary-v1.htm |
STMicroelectronics | 20/10/2000 | 36.25 Kb | HTM | glossary-v1.htm |