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LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments Buy
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ICM7218DIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP visit Intersil

germanium diode equivalent

Catalog Datasheet MFG & Type PDF Document Tags

tunnel diodes

Abstract: germanium diode equivalent -1 *Noise measure 20.L|.rn (diode biased in thenegative resistance region) AEY13-Page 2 GERMANIUM TUNNEL DIODES AEYI3 AEYI5 AEYI6 APPROXIMATE EQUIVALENT CIRCUIT MECHANICAL 1. Recommendations for mounting in circuits Contact to the diode should be made by means of a resilient arrangement so , GERMANIUM TUNNEL DIODES AEYI3 AEYI5 AEYI6 TENTATIVE DATA Germanium tunnel diodes for use as , « â'¢o < o m o «S o Hg CJ o TYPICAL DIODE CURRENT PLOTTED AGAINST DIODE VOLTAGE r.tn>w7ii AEY13-Page
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J16-18A-R01M-SC

Abstract: J16-8SP-R05M EOsO JUDSON Germanium Detector Operating Notes 0.8 to 1.8 ¡im General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a photongenerated current source with shunt , respectively. Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph S) V -www-» R, a J â ph - Rs = L = Current generated by incident photons Actual voltage across diode junction Detector junction
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germanium power devices corporation

Abstract: GM8HS ; ` s: Voltage across diode Bias Voltage Output Current Germanium Power Devices Corporation , Large and Small Area · Wide Performance Range · TE Coolers and Dewars Available Germanium Power , zero bias; shunt resistance values in this catalog are calculated at 10mV reverse bias. Germanium vs , radiant power, usually at a specified wavelength. NOISE EQUIVALENT POWER (NEP) Wavelength (nm) The , CAPACITANCE (CJ Both Germanium and InGaAs are sensitive to light in the near-infrared region of the spectrum
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ua78540

Abstract: MOTOROLA SCR SCR VTM CVTM of an SCR is the sum of VcE(sat) 811(1 VRECsat) of the two transistor equivalent circuit , cart controller is shown in Figure 1. Germanium power transistors were used by the authors because of , operation: 1. The faster turn-on time of the SCR (Q9) over that of the germanium transistors shapes the , transistor Q2 obtains reverse bias by means of diode D4. To obtain the 6 V bias, the 36 V string of 6 V , of germanium transistors produces low static loss. However, switching speeds of the germanium
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lidar apd model

Abstract: APD bias gain equivalent power (NEP) of , useful gain, M, of at least 100 for silicon APDs, or 10-40 for germanium or InGaAs APDs. In addition , below the breakdown field of the diode. Figure 1 shows the reach-through structure patented by , overall system noise. Noise equivalent power (NEP) cannot be used as the only measure of a detector , =100 to 1000 for silicon APDs and is limited to M=30 to 40 for germanium and InGaAs APDs. 3. Selecting
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GE PHOTODIODE

Abstract: 103 SRM / J IO Series General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a , Circuit Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph W W W -° R, Figure 2-3 , are described on pages 11-13. Germanium Detector Operating Notes Responsivity A Ge photodiode , Actual voltage across diode junction CD = Detector junction capacitance Rd = Detector shunt resistance Rs
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diode code m10

Abstract: APD 10ghz Current Density M=10 Temperature Coefficient APD Reverse Current Noise Equivalent Power ,1550nm Units nm A , InGaAs PIN SI = Silicon PIN SA = Silicon APD GE = Germanium PIN GA = Germanium APD M = Length (in , Diode type B = Bracket Type A = None B = Panel Mount D = Board Mount E = Panel Mount (12mm hole , Device Type IN = InGaAs PIN SI = Silicon PIN SA = Silicon APD GE = Germanium PIN GA = Germanium APD 0 = , Diode type AAA = Active Area 055 = 55 microns) 075 = 75 microns 100 = 100 microns 300 = 300 microns
Laser Components
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J16-5SP-R02M-SC

Abstract: GE PHOTODIODE Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a photon-generated current source with , 11-13. Figure 2-1 Germanium Photodiode Equivalent Circuit T - H t - H l Germanium Detector , Ge © Sl I h = Current generated by incident photons VD = Actual voltage across diode , different applications (Fig. 3-5). The "-SC" device is a p-n diode, ideal for low frequency applications and
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Abstract: ). As an example, a germanium resistance sensor with a specific sensitivity of -2.14 and resistance , CS-501 Specific Sensitivity (S) GR 1 Au-Fe Thermocouple Rh-Fe 0.1 GaAlAs Diode Si Diode RO Pt CLTS 0.01 1 10 100 500 Temperature (K) Figure 1. Absolute values of specific , resistor, CLTS: Vishay Micro-Measurements CLTS-2 metal foil gauge, CS-501: CS501 capacitor, GaAlAs diode: TG-120P gallium-aluminumarsenide @ 10 µA, GR: GR-200A-1000 germanium resistor, Pt: Pt-103 platinum Omega Engineering
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ITS-90

back Tunnel diode

Abstract: back diode OUTPUT( - ; Cv 2 2 0 p f DIO DE EQUIVALENT CIRCUIT BACK DIODE PARAMETERS Rvs Rs+ Rj CT= C P+ Cj @ 30 MHz CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel (or back diode) is , METELICS CORP 11E D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK (TUNNEL) DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES · · · · · Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & MIL-STD
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back Tunnel diode back diode DIODE tunnel MBD Germanium power MBD-1050-C19 MBD-1050-A20 MBD-1050-T80 MBD-1050-T54 MBD-1050-H20 MBD-1050-E26

1N3716

Abstract: diode germanium tu 38 f Germanium Power Devices Corp. 4 1N3712-20 1H3713-21 Specifications Tunnel Diodes IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2 , in g o f la w l Im m i lo w cop« ertone» Fati « »» » « I AXIAL DIODE OUTLINE a b s o lu te , perature above 25°C. ALL DIMENSIONS IM INCHES. DIMENSIONS A M REFERENCE UNLESS T0LERANCED. EQUIVALENT CIRCUIT (BIASED IN Mt«AT IVC CONDUCTANCE RfOION) TUNNEL DIODE SYMBOL 6/05 3RM7375 000D733 4b7
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1N3712 1N3714 1N3716 1N3717 diode germanium tu 38 f diode germanium tu 38 e 1N37131N3721 IN371 1N371S

APY12

Abstract: APY 12 SIEMENS SFH 231 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches (mm) FEATURES Maximum Ratings Operating and Storage Temperature Range Hop, Tjtq) . -4 0 " to +80°C , germanium planar PIN photodiode, designed for Ihe 1100 to 1700 nm wavelength range. It can be used as a diode with reverse voltage or for element operation. N-Ge material provides positive front and negative , =1300nm, lP=100nA) Forward Voltage (lF=100 mA, E=0) Capacitance (VR=1 V, f =1 MHz, E=0) Noise Equivalent Power
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APY12 APY 12 Siemens photodiode visible light

J16-18A-R01M-HS

Abstract: J16-18A-R01M J ^ E G zG JU D SO N 'f§jjpilljf!' Biii 'viflnJP Germanium Detector Operating Notes 0.8 to 1.8 , 1800 nm w avelength range. The equivalent circuit for a G erm a nium photodiode (Fig. 2-1) is a photon , photodiode array s are described on pages 9 and 12-13 respectively. Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph Responsivity A Ge photodiode generates a current across the p-n or p-i-n junction w , Current generated by incident photons Actual voltage across diode junction D etector junction capacitance
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J16-18A-R01M J16-18A-R01M-HS J16-8SP-R05M-HS germanium photodiode J16TE J16-5SP-R02M J16-5SP-R03M J16-8SP-R05M J16-P1-R10M
Abstract: bDE D â  flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom , 5, Lead Spacing 0.20â' (5.00 mm) DESCRIPTION The SFH 233 is a germanium planar PIN photodiode, designed for the 1100 to 1700 nm wavelength range It can be used as a diode with reverse voltage or for , , E=0) Capacitance {VR=1 V, f=1 MHz, E=0) Noise Equivalent Power (VR=1 V, >,= 1300 nm) Detection -
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Abstract: RESISTANCE (RSH) Custom devices and packaging are also available. Germanium vs. InGaAs The resistance , per unit incident radiant power, usually at a specified wavelength. NOISE EQUIVALENT POWER (NEP , photodetector output JUNCTION CAPACITANCE (CJ Both Germanium and InGaAs are sensitive to light in the , ) BASIC OPERATING CIRCUIT (WITH BIAS) Rf Rf HIGH SPEED CIRCUIT EQUIVALENT CIRCUIT Rs C , diode V b; K - Bias Voltage C d: Photodiode Capacitance R sh: Shunt Resistance -
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S00007 DIAMT01MM GR-468-CORE MIL-STD-883

LA4160

Abstract: Germanium audio Amplifier diagram use a germanium diode so that the ALC width can be made wider even at the time of decreased voltages , this case, a germanium diode is connected across pins (7) and (9), and pins (7) and (12) respectively to make the starting time as early as possible. Even if no germanium diode is connected across pins , by using 2pcs. of germanium diode. 4. Power Supply for Radio's Built-in Capacitor Microphone Pin , Voltage VO Input Resistance THD=1%, Playback 0.9 Equivalent Input Noise Voltage V 21
SANYO Electric
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LA4160 Germanium audio Amplifier diagram germanium diode equivalent 12800T TR13 TR17 ENN870D DIP14T

MBD2057-C18

Abstract: ) -5 0 5 10 DIODE EQUIVALENT CIRCUIT _rr\ 10 G Hz RF DETECTOR TEST CIRCUIT 502 M ICROSTRIP TEST FIXTURE Rvs R $ + Rj C r = C p+ C r @ 30 M Hz BACK DIODE PARAMETERS I POLARITY , FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ Rugged Germanium Planar Construction Excellent Temperature , mils 3. Pads and backside are gold CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel (or back diode) is sensitive to mechanical pressure and high temperatures. Thus it must be
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MBD2057-C18 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18

MBD3057-C18

Abstract: MBD5057-C18 (dBm) DIODE EQUIVALENT CIRCUIT 10 GHz RF DETECTOR TEST CIRCUIT 50Q MICROSTRIP TEST FIXTURE , CT= C P+C j @ 30 MHz BACK DIODE PARAMETERS I CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel (or back diode) is sensitive to m echanical pressure and high temperatures. Thus it , PLANAR BACK (TUNNEL) DIODES High Frequency D e te c to r Series (To 18 GHz) m T ^ IB = oti^ rationS FEATURES · Rugged Germanium Planar Construction · Excellent Temperature Stability · No DC Bias
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MIL-STD-195 MBD-3057-C18 MBD3057-C18 MBD5057-C18 MBD1057 MBD5057 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057-E26
Abstract: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings â'¢ Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range (T0P, Ts tg ) -4 0 â' to +80°C , 0.20" (5.08 mm) DESCRIPTION The SFH 233 is a germanium planar PIN photodiode, designed for the 1100 to 1700 nm wavelength range. It can be used as a diode with reverse voltage or for photo , =0) Noise Equivalent Power (VR=1 V, ».=1300 nm) Detection Limit (VR=1 V, X=1300 nm) 8-89 ô 3 c 3 f -
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NSL5027

Abstract: transistor LM340 that the regulator will start up under full load a reverse biased small signal germanium diode, 1N91 , case 1.0A current sink load the germanium power "diode" D1 has been added to the circuit. Since the forward voltage drop of the germanium diode D1 is less than that of the silicon substrate diode of the , 00741316 *Solid tantalum *Germanium diode (using a PNP germanium transistor with the collector shorted , *Germanium diode *Solid tantalum FIGURE 18. Tracking Dual Supply ± 15V 11 www.national.com AN
National Semiconductor
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LM340 NSL5027 transistor LM340 LM340 voltage regulator AN-103 national 12V 10A voltage regulators LM340-XX AN-103
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