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germanium diode equivalent

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Abstract: *Noise measure 20.L|.rn (diode biased in thenegative resistance region) AEY13-Page 2 GERMANIUM TUNNEL DIODES AEYI3 AEYI5 AEYI6 APPROXIMATE EQUIVALENT CIRCUIT MECHANICAL 1. Recommendations for mounting in circuits Contact to the diode should be made by means of a resilient arrangement so that it is , GERMANIUM TUNNEL DIODES AEYI3 AEYI5 AEYI6 TENTATIVE DATA Germanium tunnel diodes for use as low , •o < o m o «S o Hg CJ o TYPICAL DIODE CURRENT PLOTTED AGAINST DIODE VOLTAGE r.tn>w7ii AEY13-Page ... OCR Scan
datasheet

4 pages,
73.93 Kb

germanium diode junction capacitance AEY16 AEY15 AEY13 tunnel junction diode tunnel diodes germanium diode tunnel diode germanium diode equivalent AEY13 abstract
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Abstract: Reistance VD : v b; ` s: Voltage across diode Bias Voltage Output Current Germanium Power Devices , Large and Small Area · Wide Performance Range · TE Coolers and Dewars Available Germanium Power , zero bias; shunt resistance values in this catalog are calculated at 10mV reverse bias. Germanium , incident radiant power, usually at a specified wavelength. NOISE EQUIVALENT POWER (NEP) Wavelength (nm , JUNCTION CAPACITANCE (CJ Both Germanium and InGaAs are sensitive to light in the near-infrared region of ... OCR Scan
datasheet

8 pages,
404.81 Kb

InGaas PIN photodiode, 1550 NEP GM7VHR gep800 diode germanium catalog germanium power devices corporation datasheet abstract
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Abstract: SCR VTM CVTM of an SCR is the sum of VcE(sat) 811(1 VRECsat) of the two transistor equivalent circuit , cart controller is shown in Figure 1. Germanium power transistors were used by the authors because of , operation: 1. The faster turn-on time of the SCR (Q9) over that of the germanium transistors shapes the , transistor Q2 obtains reverse bias by means of diode D4. To obtain the 6 V bias, the 36 V string of 6 V , of germanium transistors produces low static loss. However, switching speeds of the germanium ... OCR Scan
datasheet

2 pages,
320.07 Kb

scr dc motor controller MOTOROLA SCR driver SCHEMATIC POWER SUPPLY WITH scr Motorola germanium transistor pnp mosfet schematic dc motor driver tl494 equivalent tl494 forward em* germanium diode tl494 schematic supply Motorola Power Transistor EB121 EB121/D EB121 EB121/D abstract
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Abstract: SCR VTM CVTM of an SCR is the sum of VcE(sat) 811(1 VRECsat) of the two transistor equivalent circuit , cart controller is shown in Figure 1. Germanium power transistors were used by the authors because of , operation: 1. The faster turn-on time of the SCR (Q9) over that of the germanium transistors shapes the , transistor Q2 obtains reverse bias by means of diode D4. To obtain the 6 V bias, the 36 V string of 6 V , of germanium transistors produces low static loss. However, switching speeds of the germanium ... OCR Scan
datasheet

2 pages,
320.07 Kb

tl494 schematic supply scr driving circuit for dc motor SCR 6 pulse Gate Drive Motorola germanium transistor pnp application SCR ua78540 MOTOROLA SCR EB121/D EB121 EB121/D abstract
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Abstract: silicon, the turn-on voltage of germanium and the speed of a Schottky diode majority carrier device. This device is intended for high volume, low cost applications, and is the beam lead equivalent of the HP , Whpl mi'tiM Beam Lead Schottky Diode H E W LE T T PA C K A R D Technical Data 5082-2837 Features · Fast Switching · High Breakdown · Beam Lead Equivalent of · Platinum Tri-Metal System · Wide Temperature Range · SIOa Passivation The HP 5082-2837 is an epitax ial planar passivated beam lead diode whose ... OCR Scan
datasheet

2 pages,
68.74 Kb

handling of beam lead diodes Germanium Schottky diode diode 5082-2800 datasheet abstract
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Abstract: EOsO JUDSON Germanium Detector Operating Notes 0.8 to 1.8 ¡im General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a photongenerated current source with shunt , respectively. Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph S) V -www-» R, a J -ph - Rs = L = Current generated by incident photons Actual voltage across diode junction Detector junction ... OCR Scan
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5 pages,
1123.2 Kb

fw 02j ge series capacitors J16-P1-R10M-HS PTW M connector op27 photodiode circuit shunt resistance Laser Diode 850nm 1300nm J16-P1-R13M-SC J16-5SP-R02M-HS J16-8SP-R05M J16-5SP-R03M-HS J16-18A-R01M GE PHOTODIODE datasheet abstract
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Abstract: SIEMENS SFH 231 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches (mm) FEATURES Maximum Ratings Operating and Storage Temperature Range Hop, Tjtq) . -4 0 " to +80癈 , germanium planar PIN photodiode, designed for Ihe 1100 to 1700 nm wavelength range. It can be used as a diode with reverse voltage or for element operation. N-Ge material provides positive front and negative , , X=1300nm, lP=100nA) Forward Voltage (lF=100 mA, E=0) Capacitance (VR=1 V, f =1 MHz, E=0) Noise Equivalent ... OCR Scan
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2 pages,
67 Kb

datasheet abstract
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Abstract: Dark Noise Current Density M=10 Temperature Coefficient APD Reverse Current Noise Equivalent Power , InGaAs PIN SI = Silicon PIN SA = Silicon APD GE = Germanium PIN GA = Germanium APD M = Length (in , Diode type B = Bracket Type A = None B = Panel Mount D = Board Mount E = Panel Mount (12mm hole , Device Type IN = InGaAs PIN SI = Silicon PIN SA = Silicon APD GE = Germanium PIN GA = Germanium APD 0 = , Diode type AAA = Active Area 055 = 55 microns) 075 = 75 microns 100 = 100 microns 300 = 300 microns ... Original
datasheet

3 pages,
352.04 Kb

avalanche photodiodes diode code m10 datasheet abstract
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Abstract: equivalent power (NEP) of , useful gain, M, of at least 100 for silicon APDs, or 10-40 for germanium or InGaAs APDs. In addition , below the breakdown field of the diode. Figure 1 shows the reach-through structure patented by , overall system noise. Noise equivalent power (NEP) cannot be used as the only measure of a detector's , to 1000 for silicon APDs and is limited to M=30 to 40 for germanium and InGaAs APDs. 3. Selecting ... Original
datasheet

8 pages,
57.76 Kb

Si apd photodiode 800 nm PIN APD DIODE apd model Ge APD geiger tube germanium diode equivalent InGaAs apd photodiode Photodiode apd high sensitivity geiger apd C30902S photodiode pin alpha particles APD, laser, range, finder APD bias gain datasheet abstract
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Abstract: / J IO Series General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a , Circuit Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph W W W -° R, Figure 2-3 , are described on pages 11-13. Germanium Detector Operating Notes Responsivity A Ge photodiode , Actual voltage across diode junction CD = Detector junction capacitance Rd = Detector shunt resistance Rs ... OCR Scan
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4 pages,
601.4 Kb

J16D J161 germanium diode equivalent datasheet abstract
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Semiconductors can be single elements such as silicon or germanium or compounds such as gallium arsenide or states (ON/OFF, TRUE/FALSE). BO/BI Book to Bill A trend indicator equivalent to the ratio between in very low cost products. 2) Commission des Opérations de Bourse In France it is the equivalent of applications. Diode The diode is a component with two terminals which conducts electricity in only one order. The term is used today for volatile random-access semiconductor memories. Rectifier A diode
www.datasheetarchive.com/files/stmicroelectronics/stonline/press/news/glossary-v2.htm
STMicroelectronics 14/06/1999 34.27 Kb HTM glossary-v2.htm
insulator and that of a conductor. Semiconductors can be single elements such as silicon or germanium or (ON/OFF, TRUE/FALSE). BO/BI Book to Bill A trend indicator equivalent to the ratio between ) Commission des Opérations de Bourse In France it is the equivalent of SEC - Stock Exchange Commission in the , digital TV sets and many other applications. Diode The diode is a component with two terminals memories. Rectifier A diode semiconductor device used for rectification R&D Research and
www.datasheetarchive.com/files/stmicroelectronics/stonline/press/news/glossary.htm
STMicroelectronics 20/12/2000 36.69 Kb HTM glossary.htm
insulator and that of a conductor. Semiconductors can be single elements such as silicon or germanium or equivalent to the ratio between orders booked during the month to orders delivered (invoices sent out). If equivalent of SEC - Stock Exchange Commission in the USA. CODEC COder DECoder COMBO Diode The diode is a component with two terminals which conducts electricity in only one A diode semiconductor device used for rectification R&D Research and Development
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STMicroelectronics 20/10/2000 36.25 Kb HTM glossary-v1.htm
commercialize germanium rectifiers in 1954, and the first to introduce the first commercial zener diodes and frequency applications. IR IGBTs offer higher current densities than equivalent high-voltage power MOSFETs devices rated to a few amps and large dual diode models rated to more than 400 amps. IR Marketing
www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd00142-v1.htm
International Rectifier 20/08/1999 20.23 Kb HTM wcd00142-v1.htm
commercialize germanium rectifiers in 1954, and the first to introduce the first commercial zener diodes and frequency applications. IR IGBTs offer higher current densities than equivalent high-voltage power MOSFETs devices rated to a few amps and large dual diode models rated to more than 400 amps. IR Marketing
www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd00034.htm
International Rectifier 20/08/1999 20.23 Kb HTM wcd00034.htm
germanium rectifiers in 1954, and the first to introduce the first commercial zener diodes and solar cells frequency applications. IR IGBTs offer higher current densities than equivalent high-voltage power MOSFETs devices rated to a few amps and large dual diode models rated to more than 400 amps. IR Marketing
www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd0000e.htm
International Rectifier 06/10/1998 21.01 Kb HTM wcd0000e.htm