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germanium diode equivalent

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Abstract: -1 *Noise measure 20.L|.rn (diode biased in thenegative resistance region) AEY13-Page 2 GERMANIUM TUNNEL DIODES AEYI3 AEYI5 AEYI6 APPROXIMATE EQUIVALENT CIRCUIT MECHANICAL 1. Recommendations for mounting in circuits Contact to the diode should be made by means of a resilient arrangement so , GERMANIUM TUNNEL DIODES AEYI3 AEYI5 AEYI6 TENTATIVE DATA Germanium tunnel diodes for use as , « •o < o m o «S o Hg CJ o TYPICAL DIODE CURRENT PLOTTED AGAINST DIODE VOLTAGE r.tn>w7ii AEY13-Page ... OCR Scan
datasheet

4 pages,
73.93 Kb

AEY13 AEY15 germanium diode junction capacitance AEY16 tunnel junction diode germanium diode germanium TUNNEL DIODE tunnel diode germanium diode equivalent tunnel diodes TEXT
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Abstract: EOsO JUDSON Germanium Detector Operating Notes 0.8 to 1.8 ¡im General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a photongenerated current source with shunt , respectively. Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph S) V -www-» R, a J ■ph - Rs = L = Current generated by incident photons Actual voltage across diode junction Detector junction ... OCR Scan
datasheet

5 pages,
1123.2 Kb

Laser Diode 850nm 1300nm ge series capacitors shunt resistance J16-5SP-R03M-SC fw 02j GE PHOTODIODE photodiode 1550nm nep J16-P1-R13M-SC J16-P1-R10M-HS op27 photodiode circuit germanium photodiode PIN J16-18A-R01M-HS photodiode ge J16-5SP-R03M-HS germanium diode equivalent J16-18A-R01M J16-5SP-R02M-SC J16-5SP-R02M-HS J16-8SP-R05M J16-18A-R01M-SC TEXT
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Abstract: ; ` s: Voltage across diode Bias Voltage Output Current Germanium Power Devices Corporation , Large and Small Area · Wide Performance Range · TE Coolers and Dewars Available Germanium Power , zero bias; shunt resistance values in this catalog are calculated at 10mV reverse bias. Germanium vs , radiant power, usually at a specified wavelength. NOISE EQUIVALENT POWER (NEP) Wavelength (nm) The , CAPACITANCE (CJ Both Germanium and InGaAs are sensitive to light in the near-infrared region of the spectrum ... OCR Scan
datasheet

8 pages,
404.81 Kb

diode germanium catalog gep800 germanium photodiode PIN GM10HS GM2HS GM7VHR ingaas apd photodetector Germanium power InGaas PIN photodiode, 1550 NEP GM8HS germanium power devices corporation TEXT
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Abstract: SCR VTM CVTM of an SCR is the sum of VcE(sat) 811(1 VRECsat) of the two transistor equivalent circuit , cart controller is shown in Figure 1. Germanium power transistors were used by the authors because of , operation: 1. The faster turn-on time of the SCR (Q9) over that of the germanium transistors shapes the , transistor Q2 obtains reverse bias by means of diode D4. To obtain the 6 V bias, the 36 V string of 6 V , of germanium transistors produces low static loss. However, switching speeds of the germanium ... OCR Scan
datasheet

2 pages,
320.07 Kb

SCR FAST SWITCHING Motorola Power Transistor scr dc motor controller tl494 forward using low current scrs EB121 power switch tl494 tl494 pwm mosfet driver Motorola germanium transistor pnp TL494 SCR PULSE TRANSFORMER MOTOROLA SCR driver EB121/D EB121 application SCR EB121/D EB121 scr driving circuit for dc motor EB121/D EB121 tl494 equivalent EB121/D EB121 scr dc motor forward reverse control EB121/D EB121 TL494 PWM motor EB121/D EB121 TL494 PWM motor controller EB121/D EB121 MOTOROLA SCR EB121/D EB121 ua78540 EB121/D EB121 EB121/D EB121/D EB121 TEXT
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Abstract: equivalent power (NEP) of , useful gain, M, of at least 100 for silicon APDs, or 10-40 for germanium or InGaAs APDs. In addition , below the breakdown field of the diode. Figure 1 shows the reach-through structure patented by , overall system noise. Noise equivalent power (NEP) cannot be used as the only measure of a detector , =100 to 1000 for silicon APDs and is limited to M=30 to 40 for germanium and InGaAs APDs. 3. Selecting ... Original
datasheet

8 pages,
57.76 Kb

Si apd photodiode 800 nm PIN APD DIODE apd model avalanche photodiode noise factor Photodiode apd C30902 Ge APD geiger tube germanium diode equivalent InGaAs apd photodiode PerkinElmer Avalanche Photodiode Photodiode apd high sensitivity geiger apd C30902S APD, laser, range, finder photodiode pin alpha particles APD bias gain lidar apd model TEXT
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Abstract: / J IO Series General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a , Circuit Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph W W W -° R, Figure 2-3 , are described on pages 11-13. Germanium Detector Operating Notes Responsivity A Ge photodiode , Actual voltage across diode junction CD = Detector junction capacitance Rd = Detector shunt resistance Rs ... OCR Scan
datasheet

4 pages,
601.4 Kb

J16D J161 J16-5SP-R03M-HS J16-18A-R01M-HS germanium diode equivalent GE PHOTODIODE 103 SRM TEXT
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Abstract: Current Density M=10 Temperature Coefficient APD Reverse Current Noise Equivalent Power ,1550nm Units nm A , InGaAs PIN SI = Silicon PIN SA = Silicon APD GE = Germanium PIN GA = Germanium APD M = Length (in , Diode type B = Bracket Type A = None B = Panel Mount D = Board Mount E = Panel Mount (12mm hole , Device Type IN = InGaAs PIN SI = Silicon PIN SA = Silicon APD GE = Germanium PIN GA = Germanium APD 0 = , Diode type AAA = Active Area 055 = 55 microns) 075 = 75 microns 100 = 100 microns 300 = 300 microns ... Laser Components
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datasheet

3 pages,
352.04 Kb

avalanche photodiodes APD 10ghz 1650nm diode code m10 TEXT
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Abstract: Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a photon-generated current source with , 11-13. Figure 2-1 Germanium Photodiode Equivalent Circuit T - H t - H l Germanium Detector , Ge © Sl I h = Current generated by incident photons VD = Actual voltage across diode , different applications (Fig. 3-5). The "-SC" device is a p-n diode, ideal for low frequency applications and ... OCR Scan
datasheet

4 pages,
519.81 Kb

OPA111 op27 photodiode circuit OP-27 Precision Monolithics germanium photodiode PIN J16-18A-R250U-SC J16-5SP-R02M detector active area size nep Laser Diode 850nm 1300nm J16-8SP-R05M-SC J16-P1-R10M-SC J16-18A-R01M J16P1R13M J16-5SP-R03M-SC J16-5SP-R03M-HS J16-18A-R01M-SC J16P1R10M GE PHOTODIODE J16-8SP-R05M J16-5SP-R02M-SC TEXT
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Abstract: ). As an example, a germanium resistance sensor with a specific sensitivity of -2.14 and resistance , CS-501 CS-501 Specific Sensitivity (S) GR 1 Au-Fe Thermocouple Rh-Fe 0.1 GaAlAs Diode Si Diode RO Pt CLTS 0.01 1 10 100 500 Temperature (K) Figure 1. Absolute values of specific , resistor, CLTS: Vishay Micro-Measurements CLTS-2 metal foil gauge, CS-501 CS-501: CS501 CS501 capacitor, GaAlAs diode: TG-120P TG-120P gallium-aluminumarsenide @ 10 ÂuA, GR: GR-200A-1000 GR-200A-1000 germanium resistor, Pt: Pt-103 platinum ... Omega Engineering
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datasheet

6 pages,
264.39 Kb

TEXT
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Abstract: OUTPUT( - ; Cv 2 2 0 p f DIO DE EQUIVALENT CIRCUIT BACK DIODE PARAMETERS Rvs Rs+ Rj CT= C P+ Cj @ 30 MHz CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel (or back diode) is , METELICS CORP 11E D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK (TUNNEL) DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES · · · · · Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 MIL-STD-19500 & MIL-STD ... OCR Scan
datasheet

5 pages,
348.09 Kb

Germanium power DIODE tunnel MBD back diode "back diode" back Tunnel diode TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
to commercialize germanium rectifiers in 1954, and the first to introduce the first commercial zener frequency applications. IR IGBTs offer higher current densities than equivalent high-voltage power MOSFETs to a few amps and large dual diode models rated to more than 400 amps. IR Marketing Strategy
/datasheets/files/international-rectifier/docs/wcd00000/wcd0000e.htm
International Rectifier 06/10/1998 21.01 Kb HTM wcd0000e.htm
as silicon or germanium or compounds such as gallium arsenide or indium phosphide. In day to day A trend indicator equivalent to the ratio between orders booked during the month to orders delivered ) Commission des Opérations de Bourse In France it is the equivalent of SEC - Stock Exchange Commission in the applications but are now used in compact disc players, digital TV sets and many other applications. Diode The diode is a component with two terminals which conducts electricity in only one direction. ST
/datasheets/files/stmicroelectronics/stonline/press/news/glossary-v2.htm
STMicroelectronics 14/06/1999 34.27 Kb HTM glossary-v2.htm
Semiconductors can be single elements such as silicon or germanium or compounds such as gallium arsenide or /FALSE). BO/BI Book to Bill A trend indicator equivalent to the ratio between orders booked Bourse In France it is the equivalent of SEC - Stock Exchange Commission in the USA. CODEC Diode The diode is a component with two terminals which conducts electricity in only one A diode semiconductor device used for rectification R&D Research and Development
/datasheets/files/stmicroelectronics/stonline/press/news/glossary-v1.htm
STMicroelectronics 20/10/2000 36.25 Kb HTM glossary-v1.htm
be single elements such as silicon or germanium or compounds such as gallium arsenide or indium ). BO/BI Book to Bill A trend indicator equivalent to the ratio between orders booked during ) Commission des Opérations de Bourse In France it is the equivalent of SEC - Stock Exchange Commission in the , digital TV sets and many other applications. Diode The diode is a component with two terminals term is used today for volatile random-access semiconductor memories. Rectifier A diode
/datasheets/files/stmicroelectronics/stonline/press/news/glossary.htm
STMicroelectronics 20/12/2000 36.69 Kb HTM glossary.htm
LED HIGHER COMES 8MS 700NS 700NS COST BASE OVERLOAD ALTHOUGH SHARP DUE EQUIVALENT JIM FREE APPLICATIONS SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED DIODE ROUTING RUNS PROCEDURE NUMBER GREATER SELF BLOCK ABNORMAL 74C906 74C906 DESTRUCTIVE FREQUENCY CONTROLS ADDITIONAL BASE NUMBERS ALTHOUGH DUE EQUIVALENT JIM FREE EVIDENCE DISTRIBUTED ZENER TURNING APPLICATIONS FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT
/datasheets/files/linear/lview3/parts-v1.edb
Linear 08/10/1998 5000.33 Kb EDB parts-v1.edb
LED HIGHER COMES 8MS 700NS 700NS COST BASE OVERLOAD ALTHOUGH SHARP DUE EQUIVALENT JIM FREE APPLICATIONS SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED DIODE ROUTING RUNS PROCEDURE NUMBER GREATER SELF BLOCK ABNORMAL 74C906 74C906 DESTRUCTIVE FREQUENCY CONTROLS ADDITIONAL BASE NUMBERS ALTHOUGH DUE EQUIVALENT JIM FREE EVIDENCE DISTRIBUTED ZENER TURNING APPLICATIONS FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT
/datasheets/files/linear/lview3/parts.ebd
Linear 08/10/1998 5000.33 Kb EBD parts.ebd
LED HIGHER COMES 8MS 700NS 700NS COST BASE OVERLOAD ALTHOUGH SHARP DUE EQUIVALENT JIM FREE APPLICATIONS SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED DEMANDS HAS DETERMINE CUTTING RESISTIVE FEATURES COMMAND INTEGRATE SIDE SYSTEM DIODE ROUTING RUNS HIGHER ADDITIONAL BASE NUMBERS ALTHOUGH DUE EQUIVALENT JIM FREE EVIDENCE DISTRIBUTED ZENER TURNING FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT
/datasheets/files/linear/lview4/parts.edb
Linear 15/02/2000 7168.02 Kb EDB parts.edb
LED HIGHER COMES 8MS 700NS 700NS COST BASE OVERLOAD ALTHOUGH SHARP DUE EQUIVALENT JIM FREE APPLICATIONS SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED DIODE ROUTING RUNS PROCEDURE NUMBER GREATER SELF BLOCK ABNORMAL 74C906 74C906 DESTRUCTIVE FREQUENCY CONTROLS ADDITIONAL BASE NUMBERS ALTHOUGH DUE EQUIVALENT JIM FREE EVIDENCE DISTRIBUTED ZENER TURNING APPLICATIONS FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT
/datasheets/files/linear/lview3/parts.edb
Linear 21/01/1999 5379.43 Kb EDB parts.edb
No abstract text available
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NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip