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Part Manufacturer Description Datasheet BUY
ISL9205AIRZ-T Intersil Corporation Li-ion Battery Charger; DFN10; Temp Range: -40° to 85°C visit Intersil
ISL54205AIRZ Intersil Corporation MP3/USB 2.0 High Speed Switch with Negative Signal Handling; DFN10, uTQFN10; Temp Range: -40° to 85°C visit Intersil
ISL9205AIRZ Intersil Corporation Li-ion Battery Charger; DFN10; Temp Range: -40° to 85°C visit Intersil
ISL54205AIRZ-T Intersil Corporation MP3/USB 2.0 High Speed Switch with Negative Signal Handling; DFN10, uTQFN10; Temp Range: -40° to 85°C visit Intersil
ISL54205AIRUZ-T Intersil Corporation MP3/USB 2.0 High Speed Switch with Negative Signal Handling; DFN10, uTQFN10; Temp Range: -40° to 85°C visit Intersil
205A101-12-77-0-CS5122 TE Connectivity Ltd 205A101-12-77-0-CS5122 visit Digikey

ge 205a

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: high-frequency amplifier NE/SA/SE5205A DESCRIPTION T he N E /S A /S E 5 205A fa m ily o f w id e b a n d a , rm a n c e is n om in ally id en tica l to th e orig in a l parts. T he N E /S A /S E 5 205A is a h , he N E /S A /S E 5 205A ope rates w ith a sin gle su p p ly o f 6 V, and only draw s 24m A o f supply , , large p acka ges w ith heat sinks, and high pa rt cost. The N E /S A /S E 5 205A solves these problem s , tline (S O ) p a cka ge to fu rth e r re duce parasitic effects. N o exte rn a l c o m pone nts are -
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TIC 1160 TIC 26M
Abstract: GE Sensing & Inspection Technologies NPX-SPI The NPX-SPI uses GE Sensingâ'™s NPX series as the , GE imagination at work R1, R2, R0 = 10K Ω NPX Package Outline All dimensions in mm [inches , Over Pressure °C/LSB -6 10.8 -6 -50 to 205°C mv/LSB 6 LSB 1.37 KPa/LSB 2.35 KPa , without notice. GE is a registered trademark of General Electric Company. Other company or product names , are not affiliated with GE. GE Sensing & Inspection Technologies GE Sensing & Inspection Technologies
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NPX-SPI-451 100-450-KP SPI451 NPX-SPI-701 100-700-KP SPI701
Abstract: =10V,Id=2.05A ^ds=40V1 Id=2.05A ® ® ^DS(on) 9 fa C|s« C« e« ^ d (o n ) VGS=0V,VDS=25V,f =1MHz , Current Fig 4. Source-Drain Diode Forward Voltage [QJ V æ , Scuroe -Q rairi V o lta ge Fig 5 -
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1RF624 1RF624A IRF624A
Abstract: TUNNEL DIODES GENERAL PURPOSE For Switching, Oscillators, Amplifiers, Converter Circuits and Threshold Detectors. GE TYPE Iv Vp V fRO + 100°C lp Point Capaci- Point Valley Peak Series; Negative Cutoff + ioo°e Subminiature Peak Point Current tance Voltage Voltage , 150 65 350 500 1.0 180 Typ. 1.6 1N3721 > TD-205A 22.0 = 2.5% 3.10 100 65 350 510 1.0 190 ± 30 2.6 , , Pulse Generators and Threshold Detectors. GE TYPE Iv Valley Point Current Max. (mA) Vp Peak Point -
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TD-200 1N3712 TD-201 1N3713 TD-201A 1N3714 1N3716 1N3717 TD-26EA 1N3715 TD-205A
Abstract: Generation 3 · Industry standard TO-247AC package VCES = 600V VCE(on) typ. = 1.28V G @V GE = 15V , , Collector-to-Emitter Current (A) 1000 1000 TJ = 25 oC V GE = 15V 20us PULSE WIDTH 1 V CE , 1.8 1.6 1.4 I C = 41A 1.2 I C =20.5A 1.0 0.8 -60 -40 -20 0 20 40 60 , Losses vs. Gate Resistance 50 IC = 41A 10 IC = 20.5A 1 -60 -40 -20 0 20 40 60 International Rectifier
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IRG4PC50S
Abstract: Reverse Current at Rated DC Blocking Voltsge TA =25°C -p = io g ° c T a=205°C 1N 56 22 , p e ra tin g T e m p e ra tu re Range S tora ge T e m p e ra tu re Range 35 25 20 15 -
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1N5614 1N5622
Abstract: ode x 100 = V RRM (See V oltage Ratings table) B ' P = S tud base D O -205A B (DO-9) 3/4 , 50 100 150 200 250 300 350 400 A vera ge Forward C urrent (A) A ve ra g e Forward C urrent , - Current Ratings Characteristics 0 50 100 150 200 250 300 A vera ge Forward , ) Fig. 7 - Forward Power Loss Characteristics 0 100 200 300 400 500 A vera ge -
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D83 - 004 diode D83 004 12081/A DO-205AB SD300N/R 5545E
Abstract: =250uA VGS=30V VGS=-30V VDS=250V VDS=200V,TC=125°C VGS=10V,ID=2.05A (4) VDS=40V,ID=2.05A (4 , 14 . I , Dra C nt [A] in urre D VSD , S ce ai Vol ge [ our -Dr n ta V] Fig 5 Fairchild Semiconductor
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IRFW/I624A
Abstract: =200V,TC=125°C VGS=10V,ID=2.05A (4) VDS=40V,ID=2.05A (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 , 08 . 10 . 12 . 14 . I , Dra C nt [A] in urre D VSD , S ce ai Vol ge [ our -Dr n Fairchild Semiconductor
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Abstract: =30V VGS=-30V VDS=250V See Fig 7 VDS=5V,ID=250uA VDS=200V,TC=125°C VGS=10V,ID=2.05A VDS=40V,ID=2.05A , + C gd ( C ds= s C oss= C ds+ C gd C rss= C gd VSD , S our ce -Dr ai n Vol ta ge [ V] Fig 6. Gate Fairchild Semiconductor
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IRF624
Abstract: oltage code: Code x 10 - V RRM (See V oltage R atings table) - P - Stud base D (> 205A B (D O -9) 3/4 , A verage Forward Current (A) Fig. 2 - Current Ratings Characteristics A vera ge Forward Current -
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16-UNF-2A 300HF 300HFCR
Abstract: nubber Diode. W elding. High Frequency R ectification. KEY PARAMETERS v RRM 1600V 205A Jf (AV) 3000A , \ T stg , - V irtua l ju n ctio n tem p e ra tu re S tora ge te m p e ra tu re range M ounting , Parameter Forw ard volta ge P eak reverse cu rre n t R everse reco very tim e R ecovered charge (50% chord) R everse reco very curre nt S oft fa cto r T hresh old volta ge Slope resistance Forw ard reco very volta ge A tT = V J Conditions A t 45 0A ipeak,' T c a s e = 25°C A t V HHU, T c a s e = 150°C RRM -
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DS4209 16FMR 16FKC
Abstract: 2 3 HARRIS August 1991 2N6790 N-Channel Enhancement-Mode Power MOS Field-Effect Transistor Package T0-205A F BOTTOM VIEW Features · 3.5A, 200V * rD S(on) = 0 -8 n * S O A is P ow er-D issip atio n Lim ited · N anosecond Switching S peeds SOURCE _ GATE > < * Linear T ran sfe r C haracteristics · High In put Im ped an ce · M ajority C arrier Device V _ _ *0 ^ y , DS GRAI N IO SOLJHCE V O L T A GE (VOLTS} Fig. 1 0 - T y p ic a l c a p a c ita n c e ve rsus d ra -
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diode RA 225 R T0-205A LHQ063
Abstract: 3 3 H A R R I S 2N6788 N -Channel Enhancem ent-M ode Power Field-Effect Transistor Package T0-205A F BOTTOM VIEW A ugust 1991 Features A AA A AA1 I * 0 o.OA, lOOV · rDS(on) = 0 .3 0 n · S O A is P ow er-D issip atio n Lim ited SOURCE · N anosecond S w itching S peeds · Linear T ran sfer C haracteristics _ GATE \ / ^ & 4 DRAIN (CASE) · High In p u t Im , 5 10 ?0 50 100 200 500 Vqç DRAIN to SOUHCE VO L' A GE (V0LT5I Vos. DRAIN TO -
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AGT transistor transistor 2n 456 2N678 LHDD63
Abstract: © S 15.F V MITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4209 - 2.1 DS4209 - 2.2 APPLICATIONS â  KEY PARAMETERS V RRM 1600V 205A Jf (AV) 3000A FSM 35|iC Q r 3.2|is t rr Induction Heating. â  A.C. Motor Drives. â  Snubber Diode. â , HC - 21 A - F orw ard volta ge Max. - Conditions Typ. - Parameter , Slope resistance A t Tvj F orw ard reco very volta ge d i/d t = 1000A /ns, Tj = -
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Abstract: 260°C per G.E, M50TF3564, Class B, No Accessory Teeth Y185 Superseded by Y163 Y186 260°C Capability per G.E. M50TF3564 Class B Y188 200°C Capability per G.E. M50TF3564 Class A Pyle , AlternatesNot intermateable with ESC 10 (See page 8) Variations Y144 260°C Y163 200°C Y186 260°C per GE M50TF3564, Class B Y188 200°C per GE M50TF3564, Class A ORDERING INFORMATION-EUROPEAN STANDARDS , (10*) 35° 64° 25° C 215° 248° 230° 140° 205° 155° 234° 115° 220° B -
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chn 834 TRANSISTOR ta7657 40468A DIODE chn 548 High-Power 202A MOSFET 3N128 equivalent CR325 CR331 CR333 CR334
Abstract: percentage of the u sca e a ge Full-Scale Error is a measure of the output error when full-scale code , DAC ROPT AVDD 1kâ"¦ ADC Amplifier Coupled Circuit AMP-AVDD AVDD 205â"¦ 24â , calculated by powers of 2.) 10kâ"¦ REQUIRED FOR UNBUFFERED ADC 10kâ"¦ 24â"¦ 205â"¦ 0.1ÂuF -
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BACC63BR MS3155 IL-C-83723 MIL-C-83723 MIL-C-39029
Abstract: rn -o ff t i* e â'" 130 â'" VB T j 10V» 205Ì, 100^8. = 25°C , Vq = Vpfn» 50A , â  - V'li^Wirin ir rTr~M INTERNATIONAL RECTIFIER GE DE I 4Ã5S45E â¡GD77Ã4 3 7 â Analog Devices
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Abstract: Bulletin 125177/B htemational H Rectifier INVERTER GRADE THYRISTORS ST203S s e ri es Stud Version Features A ll d iffu s e d d e s ig n C e n te r a m p lify in g g a te G u a ra n te e d h ig h d v /d t G u a ra n te e d h ig h d i/d t H ig h s u rg e c u rre n t c a p a b ility L o w th e rm a l im p e d a n c e H igh s p e e d p e rfo rm a n c e 205A Typical Applications In , 100 150 200 250 300 350 50 75 100 125 A vera ge On-state C urrent (A -
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S38B12B US 18650 stg S38B16A S38B14A S38B10B T0-200AC
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