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gaas fet micro-X Package

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL
Mitsubishi
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MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

rogers* RO4003C

Abstract: mgf1941 < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I , are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL , 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 < Power GaAs FET , /Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL
Mitsubishi
Original
rogers* RO4003C mgf1941 137 marking Micro-X gaas fet micro-X Package gaas fet micro-X r338

gaas fet marking J

Abstract: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , =0.508mm) < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1 , with sampling inspection. Gs/NFmin are not tested. 1 < Power GaAs FET > MGF1941AL Micro-X , 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD-32) < Power GaAs FET > MGF1941AL , CURRENT ID(mA) Ta=25deg.C VDS=3V 90 < Power GaAs FET > MGF1941AL Micro-X type plastic
Mitsubishi
Original

gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES , Publication Date : Apr., 2011 1 < Power GaAs FET > MGF1451A Micro-X ceramic package TYPICAL , < Power GaAs FET > MGF1451A Micro-X ceramic package S PARAMETERS (Conditions:VDS=3V,IDS=30mA,Ta , 17.7 17.2 16.9 14.9 14.0 13.5 12.7 11.7 11.4 11.0 10.8 10.7 10.5 10.4 10.2 9.4 GaAs FET Bottom view , interested, please contact our sales offices. Publication Date : Apr., 2011 3 < Power GaAs FET
Mitsubishi
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133 marking Micro-X gaas fet marking marking 133 micro-x micro-X ceramic Package

b1415

Abstract: GAAS FET CROSS REFERENCE package devices: For packaged discrete FET devices: Add a package model number to the end of chip device , For quick reference, the key design and typical microwave performance specifications and its package , hetero-junction power FETs, III.) low distortion GaAs power FETs, IV.) internally matched power FETs, and V , discrete FET products include super low noise and high gain hetero-junction FETs (EPB series), high efficiency hetero-junction power FETs (EPA series), and low distortion GaAs power FETs (EFA & EFC series).
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b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV EPA060B-70 RTC/5/01/PSINTRO

gaas fet micro-X Package

Abstract: gaas fet micro-X mold package for HJ-FET and GaAs MES FET with low cost and high performance so that the customers can , User's Manual TAPE AND REEL SPECIFICATION FOR MICRO-X PACKAGE AND MOLD PACKAGE (HJ-FET & GaAs MES FET) Document No. P10149EJ6V0UM00 (6th edition) Date Published October 1997 N © 1989 , . ADAPTED AREA This specification covers standards on tape packaging micro-X GaAs MES FET, HJ-FET and on tape packaging mold GaAs MES FET, HJ-FET. 2-1. TAPE DIMENSIONS t J X G E H
NEC
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NE76184A-T1 P1014 t25000

ISDB-t modulator

Abstract: ku-band pll lnb 23 RFICs (GaAs and Silicon) 26 Transistors (FET and Bipolar) 28 Diodes (PIN and , MMIC, SOT363 Device Type and Package E-pHEMT MMIC, SOT343 E-pHEMT MMIC, SOT363 GaAs MMIC, SOT363 , Type and Package ATF-36077 1.5/10 2 - 18 16 5 ­ 0.3 PHEMT FET, ceramic ATF , (IIP3) Package (mm) SOT-363 (SC-70) LPCC 3x3 LPCC 3x3 Component Part Number GaAs WiMAX , 0.62 0.6 4.5 Device Type and Package (mm) QFN 4x4x0.85 QFN 4x4x0.85 QFN 4x4x0.85 E-pHEMT MMIC
Avago Technologies
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ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 mga-62563 MGA-30116 MGA-12516 MGA-135166 MGA-14516 MGA-21108 MGA-53543 MGA-53589

LNA ku-band

Abstract: ku-band pll lnb Product Selection Guides RFICs (GaAs and Silicon) 15 Transistors (FET and Bipolar) Diodes (PIN and , E-pHEMT FET, SOT343 E-pHEMT FET, SOT343 E-pHEMT FET, LPCC E-pHEMT MMIC, SOT343 GaAs MMIC, SOT363 GaAs , GaAs MMIC, SOT363 E-pHEMT FET, MiniPak E-pHEMT FET, SOT343 E-pHEMT FET, LPCC E-pHEMT FET, LPCC , MMIC, SOT363 GaAs MMIC, SOT363 GaAs MMIC, Bypass, SOT363 E-pHEMT FET, MiniPak E-pHEMT FET, SOT343 , GaAs MMIC, SOT363 E-pHEMT FET, MiniPak E-pHEMT FET, SOT343 E-pHEMT FET, LPCC E-pHEMT FET, LPCC
Agilent Technologies
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ATF-58143 ATF-54143 LNA ku-band HSCH-9401 AT-64020 micro-X ceramic Package lna fet MGA-725M4 HSMS-2850 MGA-52543 ATF-531P8 MGA-82563 MGA-81563

ku-band pll lnb

Abstract: mga-62563 23 RFICs (GaAs and Silicon) 26 Transistors (FET and Bipolar) 28 Diodes (PIN and , Number Description Package Detector - Schottky diodes HSCH-9161 HSCH-5310/5330 GaAs , FET, MiniPak 2 Application PA Driver Package ATF-54143 3/60 2 16.6 20.4 , MMIC, SOT363 Device Type and Package E-pHEMT MMIC, SOT343 E-pHEMT MMIC, SOT363 GaAs MMIC, SOT363 , (dBm) OIP3 (dBm) Package GaAs Smart Bias Amplifier MGA-61563 0.1 - 6 2 3 41
Avago Technologies
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MGA-68563 schottky diode 3 lead 5Ghz lna transistor datasheet ATF-511P8 AMMP-6545 Agilent ABA-53563 MGA-631P8 MGA-632P8 ALM-1222 ALM-1322 MGA-545P8 ATF-52189

gaas fet micro-X Package

Abstract: ka band gaas fet Package GaAs FETs and PHEMTs Description Specifications Applications Package Part Number 3 9 Q. & 5 " O 30 6 2 sr s? 1 C/) Low Noise Ka Band Power MESFET Low Noise/Medium Power MESFET Low Noise/Medium Power MESFET Ka Band Power MESFET Ka Band Power MESFET Ka Band Power MESFET Ka Band Power MESFET General Purpose PHEMT General Purpose PHEMT 21 dB Pi dB @ 18 GHz 20 dB Pi dB @ 18 GHz 1 dB Noise @ , Medium Power Amplifier Medium Power Amplifier Medium Power Amplifier Medium Power Amplifier FET Based
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ka band gaas fet Package ka band power fet GHZ micro-X Package power amplifier power amplifier 4 ghz power amplifier 5 ghz AFM04P2-000 AFM04P3-000 AFM04P3-212 AFM04P3-213 AFM06P2-000 AFM06P2-212

GaAs Amplifier Micro-X Marking k

Abstract: gaas fet micro-X Package marking Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 , Bipolar Microwave Transistors 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of
Siemens
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BAT14 BXY42 BFY180 BFY193 BFY405 CFY25 GaAs Amplifier Micro-X Marking k GaAs Amplifier Micro-X CFY66 BFY40 Microwave Semiconductors BAT15 BAS40

GaAs Amplifier Micro-X Marking k

Abstract: LNA ku-band Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 , Microwave Transistors 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of Transistor
Siemens
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CLY29 CLY27 CLY30 Silicon Bipolar Transistor MICRO-X microwave fet IC SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X Marking L MWP-35 CLY38 MWP-25

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 GaAs Microwave C-Band MESFETs (Tj,max = 175 °C) Type Max. Ratings Characteristics Package , Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices 3 , 405, 420, 450 14 4.3 HiRel GaAs Microwave Devices 14 Low Noise/General Purpose GaAs Microwave C/Ku-Band MESFETs 14 Super Low Noise GaAs Microwave X/K-Band HEMTs CFY 67 15 Power
Infineon Technologies
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MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 guide selection microwave transistors BFy 90 transistor transistor C 5611 EHA07482 EHA07483 EHA07484 EHA07485 EHA07486 EHA07487

mga64135

Abstract: 1 to 3 GHz bandpass filter wide band of two GaAs FET feedback amplifier stages. As noted, feedback techniques are used throughout , performance benefits in GaAs MMICs, the design of a GaAs FET feedback amplifier requires a slightly different , of high frequency gain. Therefore, obtaining a particular gain-bandwidth product in a GaAs FET , MGA-64135 GaAs MMIC Application Note G003 Introduction The Hewlett-Packard MGA-64135 GaAs MMIC , surface-mountcompatible package, and requires only a single-polarity power supply. The MGA-64135 combines the high
Hewlett-Packard
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mga64135 1 to 3 GHz bandpass filter wide band 31883 MGA-641 rfc 33 Transistor 35 MICRO-X 64135 MGA64135 5091-7468E 5967-5922E

ATF-35176

Abstract: ina10386 gate of a GaAs FET as the frequency conversion element. HP has done some investigating of this approach , The most common device for Ku band oscillator use is an inexpensive GaAs FET. In general, a lower , (GaAs) is the appropriate technology for the LNA devices. While traditional MESFETs can provide adequate , number of noise performance selections, with the cost of the FET decreasing as the noise figure increases , FET. The higher electron mobility resulting from this technique raises the fT of the resulting
Hewlett-Packard
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ATF-35176 ina10386 INA-10386 ATF-35576 ATF35176 lnb downconverter schematic diagram AN1091 ATF-36163 5965-1235E AN1136 5966-2488E AN1139

SIEMENS MICROWAVE RADIO 8 GHz

Abstract: gaas fet micro-X Package marking Qualified Devices General Silicon Devices GaAs Devices 3 3 4 4 3. 3.1 3.2 3.3 Quality , Applications 12 12 12 4.2 Component Types Package Types HiRel Silicon Bipolar Transistors , HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs CFY25, 27 Low Noise GaAs Microwave K-Band HEMTs CFY 67 Power GaAs Microwave C-Band MESFETs CLY29, 32, 35, 38 Power GaAs Microwave X-Band MESFETs CLX27, 30, 32, 34 General Puprose GaAs MMIC L- and S- Band CGY41 14 14 14 15 15
Infineon Technologies
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x-band power transistor MSC Microwave MMIC Amplifier Micro-X marking D CGY40 Micro-X marking "Fp" INFINEON transistor PART MARKING

ATF-25735

Abstract: in a cost effective microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. 35 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain , 0.5­10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features · High , Noise Figure: 1.2 dB Typical at 4 GHz · Cost Effective Ceramic Microstrip Package Description The
Hewlett-Packard
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gaas fet micro-X Package

Abstract: 36 Micro-X 0.5 ­ 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package , P1dB at 4 GHz · Cost Effective Ceramic Microstrip Package · Tape-And-Reel Packaging Option Available [1] This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects , microstrip package. Its low noise figure makes this device appropriate for use in the first and second , TCASE > 25°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to
Agilent Technologies
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36 Micro-X 10236 ATF-10236-STR ATF-10236-TR1 GA109 5965-8697E

SMD transistor M05

Abstract: smd TRANSISTOR code m05 package Low cost GaAs SPDT, performance guaranteed at 1.8 & 3.0 Volts Notes: 1. Under development , , ESD protection NE3508M04 GaAs FET: Transistor LNAs 0.4 dB NF, 14 dB Gain 4 4 4 4 4 4 4 4 , pin package GaAs RFIC Switches ­ Broadband to 6 GHz UPG2163T5N SPDT, Insertion Loss: 0.4 dB @ , Noise Figure, 16 dB Gain @ 2.5 GHz NE3508M04 GaAs HJ FET, super low 0.45 dB noise figure, 14 dB , P1dB (dBm) Package Application +13 TK SDARS, ISM GaAs RFIC Power Amplifiers for
California Eastern Laboratories
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SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd 10/2M
Abstract: micro strip package. Its premium noise figure m akes this device appropri ate for use in low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate , W hnì HEW LETT m L'fià P A C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data , icrostrip Package · Tape-and-Reel Packaging Option A vailable 1 1 1 D escription The ATF-13336 is a high , passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25 °C -
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4447S 44475A4
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