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TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP visit Texas Instruments
X9428WS16IT1 Intersil Corporation X9428WS16IT1, SOP-16 visit Intersil
X9428WS16 Intersil Corporation X9428WS16, SOP-16 visit Intersil
X9428WS16I Intersil Corporation X9428WS16I, SOP-16 visit Intersil
EL5171IS-T7 Intersil Corporation LINE DRIVER, PDSO8, SOP-8 visit Intersil
X5163S8I-2.7T1 Intersil Corporation X5163S8I-2.7T1, SOP-8 visit Intersil

gaas fet micro-X Package marking

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL
Mitsubishi
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MGF4921AM MGF1302 gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet gaas fet marking J MGF1961A GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

rogers* RO4003C

Abstract: mgf1941 < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I , are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL , 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 < Power GaAs FET , /Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL
Mitsubishi
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rogers* RO4003C mgf1941 137 marking Micro-X gaas fet micro-X gaas fet micro-X Package GD-32

gaas fet marking J

Abstract: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , =0.508mm) < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1 , with sampling inspection. Gs/NFmin are not tested. 1 < Power GaAs FET > MGF1941AL Micro-X , 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD-32) < Power GaAs FET > MGF1941AL , CURRENT ID(mA) Ta=25deg.C VDS=3V 90 < Power GaAs FET > MGF1941AL Micro-X type plastic
Mitsubishi
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gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES , Publication Date : Apr., 2011 1 < Power GaAs FET > MGF1451A Micro-X ceramic package TYPICAL , < Power GaAs FET > MGF1451A Micro-X ceramic package S PARAMETERS (Conditions:VDS=3V,IDS=30mA,Ta , 17.7 17.2 16.9 14.9 14.0 13.5 12.7 11.7 11.4 11.0 10.8 10.7 10.5 10.4 10.2 9.4 GaAs FET Bottom view , interested, please contact our sales offices. Publication Date : Apr., 2011 3 < Power GaAs FET
Mitsubishi
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133 marking Micro-X micro-X ceramic Package gaas fet marking marking 133 micro-x

GaAs Amplifier Micro-X Marking k

Abstract: Silicon Bipolar Transistor MICRO-X Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 , Microwave Transistors 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of Transistor
Siemens
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BAT15 BAT14 BAS40 CFY66 CLY27 CLY30 GaAs Amplifier Micro-X Marking k Silicon Bipolar Transistor MICRO-X LNA ku-band microwave fet IC BXY42 BFY180 BFY193

GaAs Amplifier Micro-X Marking k

Abstract: gaas fet micro-X Package marking Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 , Bipolar Microwave Transistors 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of
Siemens
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BFY405 CFY25 CLY29 GaAs Amplifier Micro-X BFY40 transistor "micro-x" "marking" 3 BFY420 Microwave Semiconductors MWP-35 CLY38 MWP-25

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 GaAs Microwave C-Band MESFETs (Tj,max = 175 °C) Type Max. Ratings Characteristics Package , Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices 3 , 405, 420, 450 14 4.3 HiRel GaAs Microwave Devices 14 Low Noise/General Purpose GaAs Microwave C/Ku-Band MESFETs 14 Super Low Noise GaAs Microwave X/K-Band HEMTs CFY 67 15 Power
Infineon Technologies
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MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 guide selection microwave transistors BFy 90 transistor MMIC Amplifier Micro-X marking D EHA07482 EHA07483 EHA07484 EHA07485 EHA07486 EHA07487

SIEMENS MICROWAVE RADIO 8 GHz

Abstract: gaas fet micro-X Package marking Qualified Devices General Silicon Devices GaAs Devices 3 3 4 4 3. 3.1 3.2 3.3 Quality , Applications 12 12 12 4.2 Component Types Package Types HiRel Silicon Bipolar Transistors , HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs CFY25, 27 Low Noise GaAs Microwave K-Band HEMTs CFY 67 Power GaAs Microwave C-Band MESFETs CLY29, 32, 35, 38 Power GaAs Microwave X-Band MESFETs CLX27, 30, 32, 34 General Puprose GaAs MMIC L- and S- Band CGY41 14 14 14 15 15
Infineon Technologies
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SIEMENS MICROWAVE RADIO 8 GHz x-band power transistor BAS70B-HP bfy196 Micro-X marking "Fp" CGY40

microwave transistor bfy193

Abstract: GaAs Amplifier Micro-X Marking k Devices General Silicon Devices GaAs Devices 3 3 4 4 3. 3.1 3.2 3.3 Quality , Applications 12 12 12 4.2 Component Types Package Types HiRel Silicon Bipolar Transistors , HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave X-Band MESFETs General Puprose GaAs MMIC L- and S- Band CFY25, 27 CFY 67 CLY29, 32, 35, 38 CLX27, 30, 32, 34 CGY41 14 14
Infineon Technologies
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microwave transistor bfy193 siemens gaas fet Bipolar Transistors infineon radar HPAC140

INFINEON DIODE BAS 70

Abstract: gaas fet micro-X Package marking ?0í^nü!og¡«» Infineon GaAs Components HiRel Discretes and Microwave Semiconductors 11.1 , semiconductor devices for the microwave community. The device families include Silicon and GaAs electronic devices. In Silicon, microwave diodes (PIN and Schottky) and bipolar transistors are available. In GaAs , GaAs devices report our experience in HiRel parts and outline the range of components actually , fineon ! » c h n e i o g i e* GaAs Components HiRet Discretes and Microwave Semiconductors
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INFINEON DIODE BAS 70 GaAs Amplifier Micro-X Marking N

cfy 19 siemens

Abstract: cfy 14 siemens SIEMENS GaAs FET CFY 25 â'¢ Low noise â'¢ High gain â'¢ For front-end amplifiers ly >1 â'¢ Ion-implanted planar structure â'¢ All gold metallization VXM05208 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) PinC 1 , information see chapter Package Outlines. 2) ts is measured on the source lead at the soldering point to the , Put =f(Ts\ Ja*) Output characteristics Id = / (Vds) * Package mounted on alumina Transfer
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Q62703-F106 Q62703-F107 Q62703-F108 cfy 19 siemens cfy 14 siemens CFY 18 cfy siemens CFY 19 cfy 25-20 cfy 25-17 EHT08173

CFY 10

Abstract: CFY 19 GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 , Package Outlines. TS is measured on the source lead at the soldering point to the pcb. Semiconductor , ; TA*) * Package mounted on alumina Output characteristics ID = f (VDS) Transfer characteristics
Siemens
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CFY 10 Ga FET marking k cfy 14 GaAs FET cfy 19 d marking Micro-X GaAs FET cfy 14

siemens spc 2

Abstract: SIEMENS MICROWAVE RADIO include Silicon and GaAs electronic devices. In Silicon, microwave diodes (PIN and Schottky) and bipolar transistors are available. In GaAs, low noise HEMTs and low noise as well as power MESFETs and corresponding , following sections on Silicon and on GaAs devices report our experience in HiRel parts and outline the , different package variants. The microwave bipolar junction transistors (BJT) of our 3rd generation headed , devices, diodes as well as bipolar transistors, have been used in numerous space projects. 2.3. GaAs
Siemens
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siemens spc 2 SIEMENS MICROWAVE RADIO microwave transistor siemens x-band mmic lna Microwave GaAs FET micro x

ujt 2646

Abstract: TRANSISTOR J 5804 Dual-Gate GaAs FET for frequencies from 400 MHz to 3 GHz 2 2 3.8 3.8 1.8 0.9 1.9 1.6 , , High Gain GaAs FET 15 15 3.5 3.5 4 6 30 30 1.4 2.0 11.5 8.9 SOT-143 CFY 35-20 Low Noise, High Gain GaAs FET 10 2.5 12 30 1.9 8.5 MW-4 CFY 35-23 Low Noise, High Gain GaAs FET 10 2.5 12 30 2.2 8.5 MW-4 Table 3 Type , D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g .
Infineon Technologies
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ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 D-81541 P-VQFN-16-2 SCT-598 14-077D Q62702-D1354 14-077S

HRMA-0470B

Abstract: Semicon volume 1 Whal PACKARD \HrJk HEWLETT Communications Components Designerâ'™s Catalog, GaAs and Silicon , complete solutions of RF and microwave silicon and GaAs semiconductor devices and subsystems, for use in , silicon and GaAs semiconductor products. Included are discrete devices, integrated circuits, and , Silicon and GaAs Schottky Diodes PIN Diodes Step Recovery Diodes Silicon Bipolar Transistors Gallium , .2-1 Silicon & GaAs Schottky Barrier Diodes
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HRMA-0470B Semicon volume 1 SJ 2036 HP 33002A HPMA-2100 Germanium drift transistor SF-02200 E-28230 S-164 CH-8902

stb 1277 TRANSISTOR equivalent

Abstract: NE85635 packaging schematic Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability , . viii Small Signal GaAs F E T s. 1-1 Power GaAs FETs , . 5-1 GaAs Monolithic C ircuits
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stb 1277 TRANSISTOR equivalent NE85635 packaging schematic ne333 transistor bf 175 UPC1678G AN-1001 AN1010 AN1011 AN1012 AN1013 AN80901

sky77528

Abstract: SKY77344 . Carrier Lifetime TL IF = 10 mA (ns) Package SMP1330-007LF Marking: RQB Limiter Diode Chips-Low , : RL9 SMP1320-011LF Marking: RL 1. A lower profile (< 0.65 mm) SC-79 package is available; please , Access to all key process technologies: GaAs HBT, PHEMT, BiCMOS, SiGe, CMOS, RF CMOS and silicon , Package Selection Guide . . . . . . . . . . . . . . . . . . . 100 Warranty/Order , denotes lead (Pb)-free, RoHS-compliant package. Tin/lead (SnPb) packaging is not recommended for new
Skyworks Solutions
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sky77528 SKY77344 SKY77531 sky77534 srf 3417 SKY77526 CDMA2000 BRO254-09B

transistor bc 564

Abstract: TRANSISTOR 131-6 BJ 946 Packaging Instructions HF-Dioden RF Diodes HF-Transistoren RF Transistors GaAs FET GaAs FET GaAs MMIC GaAs MMIC Anschriften Literaturhinweise Semiconductor Group-Addresses , Gate GaAs FETs 4.1 SMD Plastic Package Type Max . Ratine S Charac teristics at 7 a = 25â' C I , Package Page 10 1.8 17 Package Page 5. Single Gate GaAs FETs 5.1 SMD Plastic Package , Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking
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transistor bc 564 TRANSISTOR 131-6 BJ 946 transistor Bc 949 datenblatt TRANSISTOR BC 545 DIODE smd marking 22-16 DATASHEET TRANSISTOR BC 545 B132-H6450-X-X-7400 B3-B3789 B3789-X-X-7600 B123- B6253-X-X-7600 B132-B6483-X-X-7400

srf 3417

Abstract: transistor srf 3417 signal design capabilities Access to all key process technologies: GaAs HBT, PHEMT, BiCMOS, SiGe, CMOS , the part number denotes lead (Pb)-free, RoHS-compliant package. Tin/lead (SnPb) packaging is not , ) The (Pb)-free symbol or "LF" in the part number denotes lead (Pb)-free, RoHS-compliant package , highly integrated GSM/GPRS transceiver and power amplifier in a compact 6 x 11 package. Add SAW filters , )-free, RoHS-compliant package. Skyworks Solutions, Inc. · Phone [781] 376-3000 · Fax [781
Skyworks Solutions
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transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 BRO254-07B

aat3604

Abstract: SKY77733 , RF and mixed-signal design capabilities â  Access to all key process technologies: GaAs HBT , . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Package Selection , number denotes lead (Pb)-free, RoHS-compliant package. Tin/lead (SnPb) packaging is not recommended for , offers low cost, discrete pHEMT FET packaged devices for those designers seeking the ultimate in , ) (Operating Range) IDD (mA) (Operating Range) Package (mm) SKY67151-396LF Cellular
Skyworks Solutions
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aat3604 SKY77733 aat2430 QUALCOMM FLIP CHIP ASSEMBLY SKY77765 BRO254-13A
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