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EP9302-CQZ Cirrus Logic Microcontroller visit Digikey Buy
EP9302-IQZ Cirrus Logic Microcontroller visit Digikey Buy
CS496122-CQZ Cirrus Logic 32-Bit AUDIO DSP IC; Package/Case:144-LQFP; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No visit Digikey Buy
CS496102-CQZ Cirrus Logic 32-Bit AUDIO DSP IC; Package/Case:144-LQFP; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No visit Digikey Buy
CS496112-CQZ Cirrus Logic 32-Bit AUDIO DSP IC; Package/Case:144-LQFP; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes visit Digikey Buy
CS181022-CQZ Cirrus Logic 32-bit Microprocessor IC; Package/Case:144-LQFP; Leaded Process Compatible:No; MIPS:120; Peak Reflow Compatible (260 C):No visit Digikey Buy

gaas fet micro-X Package marking

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL
Mitsubishi
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MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

rogers* RO4003C

Abstract: mgf1941 < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I , are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL , 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 < Power GaAs FET , /Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL
Mitsubishi
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rogers* RO4003C mgf1941 137 marking Micro-X gaas fet micro-X gaas fet micro-X Package GD-32

gaas fet marking J

Abstract: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , =0.508mm) < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1 , with sampling inspection. Gs/NFmin are not tested. 1 < Power GaAs FET > MGF1941AL Micro-X , 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD-32) < Power GaAs FET > MGF1941AL , CURRENT ID(mA) Ta=25deg.C VDS=3V 90 < Power GaAs FET > MGF1941AL Micro-X type plastic
Mitsubishi
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gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES , Publication Date : Apr., 2011 1 < Power GaAs FET > MGF1451A Micro-X ceramic package TYPICAL , < Power GaAs FET > MGF1451A Micro-X ceramic package S PARAMETERS (Conditions:VDS=3V,IDS=30mA,Ta , 17.7 17.2 16.9 14.9 14.0 13.5 12.7 11.7 11.4 11.0 10.8 10.7 10.5 10.4 10.2 9.4 GaAs FET Bottom view , interested, please contact our sales offices. Publication Date : Apr., 2011 3 < Power GaAs FET
Mitsubishi
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133 marking Micro-X gaas fet marking marking 133 micro-x micro-X ceramic Package

GaAs Amplifier Micro-X Marking k

Abstract: LNA ku-band Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 , Microwave Transistors 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of Transistor
Siemens
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BAT14 BXY42 BFY180 CFY25 CFY66 CLY29 GaAs Amplifier Micro-X Marking k LNA ku-band Silicon Bipolar Transistor MICRO-X CLY27 CLY30 microwave fet IC BAT15 BAS40 BFY193

GaAs Amplifier Micro-X Marking k

Abstract: gaas fet micro-X Package marking Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 , Bipolar Microwave Transistors 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of
Siemens
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BFY405 GaAs Amplifier Micro-X BFY40 Microwave Semiconductors BFY420 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X Marking L MWP-35 CLY38 MWP-25 HPAC140

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 GaAs Microwave C-Band MESFETs (Tj,max = 175 °C) Type Max. Ratings Characteristics Package , Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices 3 , 405, 420, 450 14 4.3 HiRel GaAs Microwave Devices 14 Low Noise/General Purpose GaAs Microwave C/Ku-Band MESFETs 14 Super Low Noise GaAs Microwave X/K-Band HEMTs CFY 67 15 Power
Infineon Technologies
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MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 guide selection microwave transistors BFy 90 transistor transistor C 5611 EHA07482 EHA07483 EHA07484 EHA07485 EHA07486 EHA07487

SIEMENS MICROWAVE RADIO 8 GHz

Abstract: gaas fet micro-X Package marking Qualified Devices General Silicon Devices GaAs Devices 3 3 4 4 3. 3.1 3.2 3.3 Quality , Applications 12 12 12 4.2 Component Types Package Types HiRel Silicon Bipolar Transistors , HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs CFY25, 27 Low Noise GaAs Microwave K-Band HEMTs CFY 67 Power GaAs Microwave C-Band MESFETs CLY29, 32, 35, 38 Power GaAs Microwave X-Band MESFETs CLX27, 30, 32, 34 General Puprose GaAs MMIC L- and S- Band CGY41 14 14 14 15 15
Infineon Technologies
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SIEMENS MICROWAVE RADIO 8 GHz x-band power transistor MSC Microwave MMIC Amplifier Micro-X marking D CGY40 Micro-X marking "Fp"

microwave transistor bfy193

Abstract: GaAs Amplifier Micro-X Marking k Devices General Silicon Devices GaAs Devices 3 3 4 4 3. 3.1 3.2 3.3 Quality , Applications 12 12 12 4.2 Component Types Package Types HiRel Silicon Bipolar Transistors , HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave X-Band MESFETs General Puprose GaAs MMIC L- and S- Band CFY25, 27 CFY 67 CLY29, 32, 35, 38 CLX27, 30, 32, 34 CGY41 14 14
Infineon Technologies
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microwave transistor bfy193 infineon radar micro-x 420 Bipolar Transistors

gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 ?0í^nü!og¡«» Infineon GaAs Components HiRel Discretes and Microwave Semiconductors 11.1 , semiconductor devices for the microwave community. The device families include Silicon and GaAs electronic devices. In Silicon, microwave diodes (PIN and Schottky) and bipolar transistors are available. In GaAs , GaAs devices report our experience in HiRel parts and outline the range of components actually , fineon ! » c h n e i o g i e* GaAs Components HiRet Discretes and Microwave Semiconductors
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INFINEON DIODE BAS 70 GaAs Amplifier Micro-X Marking N

cfy 19 siemens

Abstract: cfy 14 siemens SIEMENS GaAs FET CFY 25 â'¢ Low noise â'¢ High gain â'¢ For front-end amplifiers ly >1 â'¢ Ion-implanted planar structure â'¢ All gold metallization VXM05208 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) PinC 1 , information see chapter Package Outlines. 2) ts is measured on the source lead at the soldering point to the , Put =f(Ts\ Ja*) Output characteristics Id = / (Vds) * Package mounted on alumina Transfer
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Q62703-F106 Q62703-F107 Q62703-F108 cfy 19 siemens cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens EHT08173

CFY 10

Abstract: gaas fet marking a GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 , Package Outlines. TS is measured on the source lead at the soldering point to the pcb. Semiconductor , ; TA*) * Package mounted on alumina Output characteristics ID = f (VDS) Transfer characteristics
Siemens
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CFY 10 Ga FET marking k cfy 14 d marking Micro-X GaAs FET cfy 19 Micro-X marking "K"

siemens spc 2

Abstract: SIEMENS MICROWAVE RADIO include Silicon and GaAs electronic devices. In Silicon, microwave diodes (PIN and Schottky) and bipolar transistors are available. In GaAs, low noise HEMTs and low noise as well as power MESFETs and corresponding , following sections on Silicon and on GaAs devices report our experience in HiRel parts and outline the , different package variants. The microwave bipolar junction transistors (BJT) of our 3rd generation headed , devices, diodes as well as bipolar transistors, have been used in numerous space projects. 2.3. GaAs
Siemens
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siemens spc 2 SIEMENS MICROWAVE RADIO microwave transistor siemens x-band mmic lna Microwave GaAs FET micro x

ujt 2646

Abstract: TRANSISTOR J 5804 Dual-Gate GaAs FET for frequencies from 400 MHz to 3 GHz 2 2 3.8 3.8 1.8 0.9 1.9 1.6 , , High Gain GaAs FET 15 15 3.5 3.5 4 6 30 30 1.4 2.0 11.5 8.9 SOT-143 CFY 35-20 Low Noise, High Gain GaAs FET 10 2.5 12 30 1.9 8.5 MW-4 CFY 35-23 Low Noise, High Gain GaAs FET 10 2.5 12 30 2.2 8.5 MW-4 Table 3 Type , D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g .
Infineon Technologies
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ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 D-81541 P-VQFN-16-2 SCT-598 14-077D Q62702-D1354 14-077S

HRMA-0470B

Abstract: transistor bf 175 Whal PACKARD \HrJk HEWLETT Communications Components Designerâ'™s Catalog, GaAs and Silicon , complete solutions of RF and microwave silicon and GaAs semiconductor devices and subsystems, for use in , silicon and GaAs semiconductor products. Included are discrete devices, integrated circuits, and , Silicon and GaAs Schottky Diodes PIN Diodes Step Recovery Diodes Silicon Bipolar Transistors Gallium , .2-1 Silicon & GaAs Schottky Barrier Diodes
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HRMA-0470B transistor bf 175 HPMA-2085 HPMA-2100 HRMA-0670B SEMICON INDEX SF-02200 E-28230 S-164 CH-8902

ne333

Abstract: stb 1277 TRANSISTOR equivalent Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability , . viii Small Signal GaAs F E T s. 1-1 Power GaAs FETs , . 5-1 GaAs Monolithic C ircuits
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ne333 stb 1277 TRANSISTOR equivalent UPC1678G AN-1001 AN1010 AN1011 AN1012 AN1013 AN80901

sky77528

Abstract: SKY77344 . Carrier Lifetime TL IF = 10 mA (ns) Package SMP1330-007LF Marking: RQB Limiter Diode Chips-Low , : RL9 SMP1320-011LF Marking: RL 1. A lower profile (< 0.65 mm) SC-79 package is available; please , Access to all key process technologies: GaAs HBT, PHEMT, BiCMOS, SiGe, CMOS, RF CMOS and silicon , Package Selection Guide . . . . . . . . . . . . . . . . . . . 100 Warranty/Order , denotes lead (Pb)-free, RoHS-compliant package. Tin/lead (SnPb) packaging is not recommended for new
Skyworks Solutions
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sky77528 SKY77344 SKY77531 sky77534 srf 3417 SKY77526 CDMA2000 BRO254-09B

transistor bc 564

Abstract: TRANSISTOR 131-6 BJ 946 Packaging Instructions HF-Dioden RF Diodes HF-Transistoren RF Transistors GaAs FET GaAs FET GaAs MMIC GaAs MMIC Anschriften Literaturhinweise Semiconductor Group-Addresses , Gate GaAs FETs 4.1 SMD Plastic Package Type Max . Ratine S Charac teristics at 7 a = 25â' C I , Package Page 10 1.8 17 Package Page 5. Single Gate GaAs FETs 5.1 SMD Plastic Package , Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking
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transistor bc 564 TRANSISTOR 131-6 BJ 946 transistor Bc 949 datenblatt TRANSISTOR BC 545 Siemens Halbleiter transistor bc 207 npn B132-H6450-X-X-7400 B3-B3789 B3789-X-X-7600 B123- B6253-X-X-7600 B132-B6483-X-X-7400

srf 3417

Abstract: transistor srf 3417 signal design capabilities Access to all key process technologies: GaAs HBT, PHEMT, BiCMOS, SiGe, CMOS , the part number denotes lead (Pb)-free, RoHS-compliant package. Tin/lead (SnPb) packaging is not , ) The (Pb)-free symbol or "LF" in the part number denotes lead (Pb)-free, RoHS-compliant package , highly integrated GSM/GPRS transceiver and power amplifier in a compact 6 x 11 package. Add SAW filters , )-free, RoHS-compliant package. Skyworks Solutions, Inc. · Phone [781] 376-3000 · Fax [781
Skyworks Solutions
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transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 BRO254-07B

aat2430

Abstract: QUALCOMM FLIP CHIP ASSEMBLY , RF and mixed-signal design capabilities â  Access to all key process technologies: GaAs HBT , . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Package Selection , number denotes lead (Pb)-free, RoHS-compliant package. Tin/lead (SnPb) packaging is not recommended for , offers low cost, discrete pHEMT FET packaged devices for those designers seeking the ultimate in , ) (Operating Range) IDD (mA) (Operating Range) Package (mm) SKY67151-396LF Cellular
Skyworks Solutions
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aat2430 QUALCOMM FLIP CHIP ASSEMBLY SKY77733 SKY77765 BRO254-13A
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