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gaas fet marking

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Abstract: Marking manner of MITSUBISHI GaAs FET QL-1104E-A QL-1104E-A (July/2008) [Leadless ceramic package] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A QL-1104E-A (July/2008) [4pin flat lead package] GD-30 GD-30 Top View Source ... Mitsubishi
Original
datasheet

7 pages,
248.56 Kb

MGF4851A MGF1907 mitsubishi marking lot number MGF4961 mitsubishi top side marking mitsubishi gaAs gaas fet marking MGF4921AM FET GAAS marking a QL-1104E-A Micro-X marking "K" MGF1963A MGF1961A MGF1964A gaas fet micro-X Package gaas fet marking J marking K gaas fet gaas fet marking a gaas fet micro-X Package marking gaas fet marking B GD-26 TEXT
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Abstract: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw ... OCR Scan
datasheet

10 pages,
376.33 Kb

FMC1414P1-02 5964-18DA 0910-8C FLL-300-1 6472-6D fll171 2527L-20 FET marking code gaas fet marking a fll300ip-2 FLL200-2 FLL300-1 fujitsu x51 FUJITSU L101 FSX52WF FLL55 FLL300-2 Fujitsu K022 fujitsu gaas marking code FMC141401-02 TEXT
datasheet frame
Abstract: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A PS7200H-1A 4-PIN SOP, 2.2 LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , -1A PACKAGE DIMENSIONS (UNIT: mm) 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET , 0.25 M 0.5±0.3 MARKING EXAMPLE 200H 001 No.1 pin Mark *1 Applicable type numbers are ... NEC
Original
datasheet

4 pages,
36.23 Kb

Nec AC 160 MARKING 42 N -FET marking E3 gaas fet gaas fet marking C LOT CODE NEC NEC PART NUMBER MARKING P13560EJ2V0DS gaas fet marking a nec gaas fet marking NEC Date code Marking RELAY code marking NEC NEC MARKING CODE PS7200H-1A code marking NEC PS7200H-1A date code marking NEC PS7200H-1A PS7200H-1A PS7200H-1A TEXT
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Abstract: .45 7.2 Power GaAs FET, GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET ... NEC
Original
datasheet

73 pages,
1338.38 Kb

FMCW FET GAAS marking a smd code marking NEC rf transistor marking code R37 SMD Transistor t76 transistor smd transistor marking T79 ghz MARKING SMD npn TRANSISTOR R44 marking code C1E mmic marking code R33 SMD Transistor NE582M03 smd code marking NEC 817 smd code marking C1E smd transistor g1-L NE3210SO1 NE92039 g2b 6-pin smd transistor smd c1y FMCW Radar TRANSISTOR SMD MARKING CODE s01 marking code C1E SMD Transistor TEXT
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Abstract: .56 Power GaAs FET, GaAs MMIC, GaAs MCM , ) .59 GaAs MES FET , .60 GaAs MES FET Chip .60 GaAs MES FET .60 UHF Dual Gate GaAs MES FET ... NEC
Original
datasheet

76 pages,
1053.44 Kb

Diode SOT-23 marking 15d t79 Ku BAND SUPER LOW NOISE AMPLIFIER ic 7905 MMIC L band to Ku converter NE582M03 3SK177 uPC1652 2SC5431 2SC2148 NEM0899F01-30 NEC U71 MC-7712 D-40472 NEC Ga FET marking code T79 D-40472 pc1658 D-40472 gaas fet T79 D-40472 transistor marking T79 ghz D-40472 PC1658G D-40472 manual* cygnus sl 5000 D-40472 UAA 1006 D-40472 D-40472 D-40472 TEXT
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Abstract: FSC60ML FSC60ML General Purpose GaAs FET FEATURES · Low Noise Figure: NF=0.8dB (Typ.) @ f=4GHz · High , . DESCRIPTION The FSC60ML FSC60ML is a low noise GaAs FET with an N-channel Schottky gate that is well suited for GPS , dB dB dB dB Edition 1.1 July 1999 1 FSC60ML FSC60ML General Purpose GaAs FET DRAIN CURRENT vs , ) 2 FSC60ML FSC60ML General Purpose GaAs FET +j50 +j100 +j25 S11 S22 +90¡ S21 S12 +j250 +j10 0.9 0.5 , Purpose GaAs FET Case Style "ML" 1.9±0.2 (0.075) 0.4 +0.1 ­0.05 (0.016) 0.4 +0.1 ­0.05 (0.016) 5 ... Fujitsu
Original
datasheet

4 pages,
62.27 Kb

nf 817 gaas fet marking D gaas fet marking a Fujitsu GaAs FET Amplifier FUJITSU GaAs FET FSC60ML TEXT
datasheet frame
Abstract: HMC216MS8 HMC216MS8 / 216MS8E 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , On-line at www.hittite.com HMC216MS8 HMC216MS8 / 216MS8E 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com HMC216MS8 HMC216MS8 / 216MS8E 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , www.hittite.com HMC216MS8 HMC216MS8 / 216MS8E 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz ... Hittite Microwave
Original
datasheet

6 pages,
231.63 Kb

HMC216MS8E 216MS8E marking c gaas fet HMC216MS8 gaas fet marking a H216 TEXT
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Abstract: SIEMENS GaAs FET CLY15 CLY15 Datasheet * Power am plifier for mobile phones * For frequencies , 09.96 SIEMENS GaAs FET CLY 15 Electrical characteristics (T4 = 25°C, unless otherwise , . Semiconductor Group 1660 09.96 SIEMENS GaAs FET CLY15 CLY15 Output Charateristics VDStV , [dBm] Semiconductor Group 1661 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter , 1662 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter V d s = 5V Iq =1.4A Zo ... OCR Scan
datasheet

7 pages,
162.28 Kb

FET marking code 365 Siemens A 1458 CLY15 TEXT
datasheet frame
Abstract: CLY 2 GaAs FET , Aktiengesellschaft pg. 1/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 2/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 3/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 4/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET ... Siemens
Original
datasheet

7 pages,
52.45 Kb

SIEMENS MAG 6000 siemens gaas fet Q62702-L96 marking code 5 cly 2 GaAs FET gaas fet marking a TEXT
datasheet frame
Abstract: HMC216MS8 HMC216MS8 / 216MS8E 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Conversion Loss vs Temperature , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com 9 - 95 HMC216MS8 HMC216MS8 / 216MS8E 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Notes: MIXERS - DBL-BAL - ... Hittite Microwave
Original
datasheet

6 pages,
164.24 Kb

gaas fet marking C gaas fet marking 216MS8E HMC216MS8 gaas fet marking a HMC216MS8E h216 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/64758682-169536ZC/laser.zip ()
Infineon 19/02/2000 30.12 Kb ZIP laser.zip
MR Head Bias Digital camera CCD bias LCD bias GaAs FET bias Positive to negative Size Package Marking Type Pins MSL SPICE IBIS Qty $US each LM2611EVAL LM2611EVAL low cost. High efficiency is achieved through the use of a low R DS(ON) FET. The LM2611 LM2611 features a 1.4MHz switching frequency Low R DS(ON) DMOS FET 1mVp-p output ripple -5V at 300mA from 5V
/datasheets/files/national/htm/nsc03152-v5.htm
National 16/08/2002 20.38 Kb HTM nsc03152-v5.htm
MR Head Bias Digital camera CCD bias LCD bias GaAs FET bias Positive to negative Size Package Marking Type Pins MSL SPICE IBIS Qty $US each LM2611EVAL LM2611EVAL low cost. High efficiency is achieved through the use of a low R DS(ON) FET. The LM2611 LM2611 features a 1.4MHz switching frequency Low R DS(ON) DMOS FET 1mVp-p output ripple -5V at 300mA from 5V
/datasheets/files/national/htm/nsc02049-v5.htm
National 01/11/2002 23.33 Kb HTM nsc02049-v5.htm
CCD bias LCD bias GaAs FET bias Positive to negative conversion Reliability Std Pack Size Package Marking Type Pins MSL/Lead-Free Availability Lead Time through the use of a low R DS(ON) FET. The LM2611 LM2611 features a shutdown pin, which can be activated DS(ON) DMOS FET 1mVp-p output ripple -5V at 300mA from 5V input Better regulation than a
/datasheets/files/national/lm2611.htm
National 27/02/2004 17.34 Kb HTM lm2611.htm
Bias Digital camera CCD bias LCD bias GaAs FET bias Positive to negative conversion Orders Budgetary Pricing Std Pack Size Package Marking Type Pins MSL/Lead-Free is achieved through the use of a low R DS(ON) FET. The LM2611 LM2611 features a shutdown pin, which can switching frequency Low R DS(ON) DMOS FET 1mVp-p output ripple -5V at 300mA from 5V input
/datasheets/files/national/lm2611.html
National 25/09/2003 17.84 Kb HTML lm2611.html
PHENOMENON DIFFERENT 10X SLEWING LINES THIRD HAS DIP IMPORTANT FEATURES FET UPON TIE POORLY DOES OBSERVATION LEAD DIFFERENT 10V PIERCE PICKS ADDS HAS RESONATOR 25PF RESISTIVE IMPORTANT INSULATING UNIVERSALLY FET FET R.A POTENTIOMETERS INTEGRATE SIDE DIODE SEPTEMBER RUNS SELF GREATER DEPOSITS DOES RECOVERY PHASE FET UPON DIODE RUNS NUMBER SELF DEGRADE SCALED ACQUIRED FREQUENCY PROPER DIFFICULT INTEGRATING CORRESPONDS DIE EXPRESSED STABILITY LEAD 10V COLLECTORS HAS IMPORTANT FET FEATURES DIODE SIDE NUMBER GREATER
/datasheets/files/linear/lview3/parts-v1.edb
Linear 08/10/1998 5000.33 Kb EDB parts-v1.edb
MOSFET Triodes @3213" CALL "Dual-Gate GaAs FETs @3214" CALL "HEMTs @3215" CALL "GaAs MMICs @3216" CALL "GaAs FET @3217" CALL "Silicon MMICs @3218" END MENUE "Silicon Bipolar Transistors @3211" FILE 52" "A0908 A0908" FILE "CGY 62" "321608" END MENUE "GaAs FET @3217" FILE "CFY 10" "A0780 A0780" FILE "CFY "A0427 A0427" FILE "BF 999" "A0459 A0459" END MENUE "Dual-Gate GaAs FETs @3214" FILE "CF 739" "A0902 A0902" FILE "CF 76-10" "321505" FILE "CFY 77-08" "321506" FILE "CFY 77-10" "321507" END MENUE "GaAs MMICs @3216"
/datasheets/files/siemens/setup/hlmenu-v2.def
Siemens 16/03/1994 77.97 Kb DEF hlmenu-v2.def
PHENOMENON DIFFERENT 10X SLEWING LINES THIRD HAS DIP IMPORTANT FEATURES FET UPON TIE POORLY DOES OBSERVATION LEAD DIFFERENT 10V PIERCE PICKS ADDS HAS RESONATOR 25PF RESISTIVE IMPORTANT INSULATING UNIVERSALLY FET DETERMINE FEATURES FET R.A POTENTIOMETERS INTEGRATE SIDE DIODE SEPTEMBER RUNS SELF GREATER DEPOSITS DOES RELIABILITY COLLECTORS HAS IMPORTANT CUTTING FEATURES COMMAND FET UPON DIODE RUNS NUMBER SELF DEGRADE SCALED SERIOUSLY CAUSE CORRESPONDS DIE EXPRESSED STABILITY LEAD 10V COLLECTORS HAS IMPORTANT FET FEATURES DIODE
/datasheets/files/linear/lview4/parts.edb
Linear 15/02/2000 7168.02 Kb EDB parts.edb
PHENOMENON DIFFERENT 10X SLEWING LINES THIRD HAS DIP IMPORTANT FEATURES FET UPON TIE POORLY DOES OBSERVATION LEAD DIFFERENT 10V PIERCE PICKS ADDS HAS RESONATOR 25PF RESISTIVE IMPORTANT INSULATING UNIVERSALLY FET FET R.A POTENTIOMETERS INTEGRATE SIDE DIODE SEPTEMBER RUNS SELF GREATER DEPOSITS DOES RECOVERY PHASE FET UPON DIODE RUNS NUMBER SELF DEGRADE SCALED ACQUIRED FREQUENCY PROPER DIFFICULT INTEGRATING CORRESPONDS DIE EXPRESSED STABILITY LEAD 10V COLLECTORS HAS IMPORTANT FET FEATURES DIODE SIDE NUMBER GREATER
/datasheets/files/linear/lview3/parts.ebd
Linear 08/10/1998 5000.33 Kb EBD parts.ebd
No abstract text available
/datasheets/files/philips/search/docindex.txt
Philips 25/04/2003 954.24 Kb TXT docindex.txt