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Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

gaas fet marking

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source Mitsubishi
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MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A
Abstract: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw -
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03
Abstract: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , -1A PACKAGE DIMENSIONS (UNIT: mm) 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET , 0.25 M 0.5±0.3 MARKING EXAMPLE 200H 001 No.1 pin Mark *1 Applicable type numbers are NEC
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date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking PS7200H-1A-E3 P13560EJ2V0DS00
Abstract: .45 7.2 Power GaAs FET, GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET NEC
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marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y g2b 6-pin smd NE92039 P14740 P14740EE5V0PF00
Abstract: .56 Power GaAs FET, GaAs MMIC, GaAs MCM , ) .59 GaAs MES FET , .60 GaAs MES FET Chip .60 GaAs MES FET .60 UHF Dual Gate GaAs MES FET NEC
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UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G gaas fet T79 pc1658 D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925
Abstract: FSC60ML General Purpose GaAs FET FEATURES · Low Noise Figure: NF=0.8dB (Typ.) @ f=4GHz · High , . DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate that is well suited for GPS , dB dB dB dB Edition 1.1 July 1999 1 FSC60ML General Purpose GaAs FET DRAIN CURRENT vs , ) 2 FSC60ML General Purpose GaAs FET +j50 +j100 +j25 S11 S22 +90¡ S21 S12 +j250 +j10 0.9 0.5 , Purpose GaAs FET Case Style "ML" 1.9±0.2 (0.075) 0.4 +0.1 ­0.05 (0.016) 0.4 +0.1 ­0.05 (0.016) 5 Fujitsu
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FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D nf 817 FCSI0598M200
Abstract: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , On-line at www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Hittite Microwave
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HMC216MS8E H216 marking c gaas fet
Abstract: SIEMENS GaAs FET CLY15 Datasheet * Power am plifier for mobile phones * For frequencies , 09.96 SIEMENS GaAs FET CLY 15 Electrical characteristics (T4 = 25°C, unless otherwise , . Semiconductor Group 1660 09.96 SIEMENS GaAs FET CLY15 Output Charateristics VDStV , [dBm] Semiconductor Group 1661 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter , 1662 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter V d s = 5V Iq =1.4A Zo -
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Siemens A 1458 FET marking code 365 Q62702-L99
Abstract: CLY 2 GaAs FET , Aktiengesellschaft pg. 1/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 2/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 3/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 4/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET Siemens
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Q62702-L96 cly 2 GaAs FET marking code 5 siemens gaas fet SIEMENS MAG 6000
Abstract: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Conversion Loss vs Temperature , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com 9 - 95 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Notes: MIXERS - DBL-BAL - Hittite Microwave
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gaas fet marking C
Abstract: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Absolute Maximum Ratings RF / IF Input LO , HMC216MS8E are ultra miniature double-balanced FET mixers in 8 lead plastic surface mount packages (MSOP). Hittite Microwave
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Abstract: SIEMENS Datasheet GaAs FET CLY 2 * Power amplifier for mobile phones * For frequencies up , soldering point to the pcb. Semiconductor Group 1637 12.96 SIEMENS GaAs FET CLY 2 , 12.96 SIEMENS GaAs FET CLY 2 Output Characteristics 0,5 t ·Ptotoc Draincurrent [A , /> Semiconductor Group 1639 12.96 SIEMENS GaAs FET CLY 2 VDS = 3 V typ. Common Source , Additional S-Parameter available on CD Semiconductor Group 1640 12.96 SIEMENS GaAs FET CLY -
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marking S221 TMS 1600
Abstract: HMC216MS8 / 216MS8E v02.0705 OBSOLETE PRODUCT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - , apps@hittite.com OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz MxN Spurious Outputs nLO mRF , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Evaluation Circuit Board , Functional Diagram General Description The HMC216MS8 & HMC216MS8E are ultra miniature double-balanced FET Hittite Microwave
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Abstract: Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS , 2009 NS PS720C-1A PACKAGE DIMENSIONS (UNIT: mm) MARKING EXAMPLE (LASER MARKING) PHOTOCOUPLER , Current MOS FET Isolation Voltage *1 *3 *1 PW = 100 s, Duty Cycle = 1% *2 PW = 100 ms, 1 California Eastern Laboratories
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FET GAAS marking a PS720C PS720C-1A-F3 PN10778EJ01V0DS
Abstract: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves Mini-Circuits
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VNA-25 414 monolithic amplifier 5253 1007 mcl-25 rf VNA-25 equivalent 6635 fet 2002/95/EC RO4350 IPC/JEDECJ-STD-020C C/85RH
Abstract: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , =12GHz, Pin=-5dBm Note: P1B and Glp are tested with sampling inspection. 1 < Power GaAs FET , ¼š Gate 解 Source 回 Drain < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , VOLTAGE VGS(V) 0.0 < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS (VDS , interested, please contact our sales offices. < Power GaAs FET > MGF1952A Leadless ceramic package Mitsubishi
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Abstract: CFY 35 GaAs FET , . TriQuint Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 1/5 CFY 35 GaAs FET , 35 GaAs FET , Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 3/5 CFY 35 GaAs FET , 80.3 TriQuint Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 4/5 GaAs FET CFY 35 TriQuint Semiconductor
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Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 GaAs FET cfy 19 CFY 10 Ga FET marking k f5035 F1393 D-81829
Abstract: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801E-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET APPLICATIONS · Measurement , +0.1 ­0.05 4.6±0.2 3.6 +0.3 ­0.4 0.4±0.1 1.27 0.2±0.1 MARKING EXAMPLE 1E N 503 No NEC
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PS7801E-1A-F3 PN10569EJ01V0DS
Abstract: SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fm jn = 1.4 dB @ 4 G H z) * High gain , . Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HLEH PD 21 SIEMENS GaAs FET CFY 30 , 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA , ] Siemens Aktiengesellschaft pg. 3/6 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY 30 , SIEMENS GaAs FET Typical Common Source S-Parameters lD = 15mA Up = 3.5 V S21 Mag 2.43 2.43 2.43 2.43 -
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SIEMENS 230 92 O CFY 18 siemens 230 98 O siemens 230 99 o Q62703-F97
Abstract: Microelectronics GET-30484 Internal Visual Inspection (Low Noise GaAs FET) GET-30447 Internal Visual Inspection , GaAs FET Examination or Test MH-STD-750 METHOD Condition Reliability Grade GRADEL Internal , , Kanagawa, 211-8666 Specification Control Drawing of Grade L GaAs Devices for Satellite Applications , Design and Construction 3.4 Performance 3.5 Package Outline 3.6 Chip Drawing 3.7 Marking (Packaged , Submittal 5.0 Preparation for Delivery 5.1 Packaging 5.2 Marking GET-30749, Rev.C, Page 3 of 22 -
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NE674 NEC Ga FET marking L tamagawa mmic amplifier marking code N5 NE272 NE23383B NE292 NE67400 A-120 MIL-S-19500 MIL-PRF-19500 PG101B PG101P
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