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TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP visit Texas Instruments
ISL6146AFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146DFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

gaas fet marking

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source
Mitsubishi
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MGF4921AM MGF1302 gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet gaas fet marking J MGF1961A GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

FMC141401-02

Abstract: fujitsu gaas marking code APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

date code marking NEC

Abstract: code marking NEC PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , -1A PACKAGE DIMENSIONS (UNIT: mm) 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET , 0.25 M 0.5±0.3 MARKING EXAMPLE 200H 001 No.1 pin Mark *1 Applicable type numbers are
NEC
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date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking PS7200H-1A-E3 P13560EJ2V0DS00

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 .45 7.2 Power GaAs FET, GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET
NEC
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marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y g2b 6-pin smd NE92039 P14740 P14740EE5V0PF00

UAA 1006

Abstract: manual* cygnus sl 5000 .56 Power GaAs FET, GaAs MMIC, GaAs MCM , ) .59 GaAs MES FET , .60 GaAs MES FET Chip .60 GaAs MES FET .60 UHF Dual Gate GaAs MES FET
NEC
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UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G gaas fet T79 pc1658 D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925

FSC60ML

Abstract: FUJITSU GaAs FET FSC60ML General Purpose GaAs FET FEATURES · Low Noise Figure: NF=0.8dB (Typ.) @ f=4GHz · High , . DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate that is well suited for GPS , dB dB dB dB Edition 1.1 July 1999 1 FSC60ML General Purpose GaAs FET DRAIN CURRENT vs , ) 2 FSC60ML General Purpose GaAs FET +j50 +j100 +j25 S11 S22 +90¡ S21 S12 +j250 +j10 0.9 0.5 , Purpose GaAs FET Case Style "ML" 1.9±0.2 (0.075) 0.4 +0.1 ­0.05 (0.016) 0.4 +0.1 ­0.05 (0.016) 5
Fujitsu
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FUJITSU GaAs FET Fujitsu GaAs FET Amplifier nf 817 gaas fet marking D FCSI0598M200

H216

Abstract: HMC216MS8 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , On-line at www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz
Hittite Microwave
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HMC216MS8E H216 marking c gaas fet

Siemens A 1458

Abstract: FET marking code 365 SIEMENS GaAs FET CLY15 Datasheet * Power am plifier for mobile phones * For frequencies , 09.96 SIEMENS GaAs FET CLY 15 Electrical characteristics (T4 = 25°C, unless otherwise , . Semiconductor Group 1660 09.96 SIEMENS GaAs FET CLY15 Output Charateristics VDStV , [dBm] Semiconductor Group 1661 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter , 1662 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter V d s = 5V Iq =1.4A Zo
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Siemens A 1458 FET marking code 365 Q62702-L99

gaas fet marking a

Abstract: cly 2 GaAs FET CLY 2 GaAs FET , Aktiengesellschaft pg. 1/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 2/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 3/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 4/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET
Siemens
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Q62702-L96 cly 2 GaAs FET siemens gaas fet marking code 5 SIEMENS MAG 6000

h216

Abstract: HMC216MS8E HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Conversion Loss vs Temperature , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com 9 - 95 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Notes: MIXERS - DBL-BAL -
Hittite Microwave
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gaas fet marking C gaas fet marking

HMC216MS8

Abstract: h216 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Absolute Maximum Ratings RF / IF Input LO , HMC216MS8E are ultra miniature double-balanced FET mixers in 8 lead plastic surface mount packages (MSOP).
Hittite Microwave
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siemens gaas fet

Abstract: TMS 1600 SIEMENS Datasheet GaAs FET CLY 2 * Power amplifier for mobile phones * For frequencies up , soldering point to the pcb. Semiconductor Group 1637 12.96 SIEMENS GaAs FET CLY 2 , 12.96 SIEMENS GaAs FET CLY 2 Output Characteristics 0,5 t ·Ptotoc Draincurrent [A , /> Semiconductor Group 1639 12.96 SIEMENS GaAs FET CLY 2 VDS = 3 V typ. Common Source , Additional S-Parameter available on CD Semiconductor Group 1640 12.96 SIEMENS GaAs FET CLY
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TMS 1600 marking S221

HMC216MS8

Abstract: HMC216MS8 / 216MS8E v02.0705 OBSOLETE PRODUCT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - , apps@hittite.com OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz MxN Spurious Outputs nLO mRF , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Evaluation Circuit Board , Functional Diagram General Description The HMC216MS8 & HMC216MS8E are ultra miniature double-balanced FET
Hittite Microwave
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gaas fet marking B

Abstract: FET GAAS marking a Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS , 2009 NS PS720C-1A PACKAGE DIMENSIONS (UNIT: mm) MARKING EXAMPLE (LASER MARKING) PHOTOCOUPLER , Current MOS FET Isolation Voltage *1 *3 *1 PW = 100 s, Duty Cycle = 1% *2 PW = 100 ms, 1
California Eastern Laboratories
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FET GAAS marking a PS720C PS720C-1A-F3 PN10778EJ01V0DS

mcl-25 rf

Abstract: VNA-25 Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves
Mini-Circuits
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VNA-25 mcl-25 rf 414 monolithic amplifier VNA-25 equivalent 5253 1007 6635 fet 2002/95/EC RO4350 IPC/JEDECJ-STD-020C C/85RH
Abstract: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , =12GHz, Pin=-5dBm Note: P1B and Glp are tested with sampling inspection. 1 < Power GaAs FET , ¼š Gate 解 Source 回 Drain < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , VOLTAGE VGS(V) 0.0 < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS (VDS , interested, please contact our sales offices. < Power GaAs FET > MGF1952A Leadless ceramic package Mitsubishi
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GaAs FET cfy 14

Abstract: GaAs FET cfy 19 CFY 35 GaAs FET , . TriQuint Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 1/5 CFY 35 GaAs FET , 35 GaAs FET , Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 3/5 CFY 35 GaAs FET , 80.3 TriQuint Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 4/5 GaAs FET CFY 35
TriQuint Semiconductor
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Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 GaAs FET cfy 19 CFY 10 Ga FET marking k D-81829
Abstract: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801E-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET APPLICATIONS · Measurement , +0.1 ­0.05 4.6±0.2 3.6 +0.3 ­0.4 0.4±0.1 1.27 0.2±0.1 MARKING EXAMPLE 1E N 503 No NEC
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PS7801E-1A-F3 PN10569EJ01V0DS

SIEMENS 230 92 O

Abstract: siemens gaas fet SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fm jn = 1.4 dB @ 4 G H z) * High gain , . Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HLEH PD 21 SIEMENS GaAs FET CFY 30 , 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA , ] Siemens Aktiengesellschaft pg. 3/6 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY 30 , SIEMENS GaAs FET Typical Common Source S-Parameters lD = 15mA Up = 3.5 V S21 Mag 2.43 2.43 2.43 2.43
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SIEMENS 230 92 O siemens 230 99 o siemens 230 98 O CFY 18 S11 SIEMENS Q62703-F97

NEC Ga FET marking L

Abstract: tamagawa Microelectronics GET-30484 Internal Visual Inspection (Low Noise GaAs FET) GET-30447 Internal Visual Inspection , GaAs FET Examination or Test MH-STD-750 METHOD Condition Reliability Grade GRADEL Internal , , Kanagawa, 211-8666 Specification Control Drawing of Grade L GaAs Devices for Satellite Applications , Design and Construction 3.4 Performance 3.5 Package Outline 3.6 Chip Drawing 3.7 Marking (Packaged , Submittal 5.0 Preparation for Delivery 5.1 Packaging 5.2 Marking GET-30749, Rev.C, Page 3 of 22
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NE674 NEC Ga FET marking L tamagawa NE272 mmic amplifier marking code N5 NE23383B FET marking code .N5 NE67400 A-120 MIL-S-19500 MIL-PRF-19500 PG101B PG101P
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