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TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP visit Texas Instruments
ISL6146BFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146EFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

gaas fet marking a

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL-1104E-A , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package
Mitsubishi
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QL-1104E-A MGF4921AM MGF1302 gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet gaas fet marking J MGF1961A GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A

FMC141401-02

Abstract: fujitsu gaas marking code APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw , Marking of Part Number JL: X 3 ¡7 4 121 > H - | i |2| d |ä 1 Ì JAPAN xrp : Lot Number
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

date code marking NEC

Abstract: code marking NEC PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , Loff = 0.03 nA TYP.) · High-speed turn-on time (t on = 0.06 ms TYP.) · 1 channel type (1 a output) · , -1A PACKAGE DIMENSIONS (UNIT: mm) 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET
NEC
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date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking PS7200H-1A-E3 P13560EJ2V0DS00

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 .45 7.2 Power GaAs FET, GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET
NEC
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marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y g2b 6-pin smd NE92039 P14740 P14740EE5V0PF00

UAA 1006

Abstract: manual* cygnus sl 5000 .56 Power GaAs FET, GaAs MMIC, GaAs MCM , ) .59 GaAs MES FET , .60 GaAs MES FET Chip .60 GaAs MES FET .60 UHF Dual Gate GaAs MES FET
NEC
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UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G gaas fet T79 pc1658 D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925

FSC60ML

Abstract: FUJITSU GaAs FET . DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate that is well suited for GPS , FSC60ML General Purpose GaAs FET FEATURES · Low Noise Figure: NF=0.8dB (Typ.) @ f=4GHz · High , dB dB dB dB Edition 1.1 July 1999 1 FSC60ML General Purpose GaAs FET DRAIN CURRENT vs , ) 2 FSC60ML General Purpose GaAs FET +j50 +j100 +j25 S11 S22 +90¡ S21 S12 +j250 +j10 0.9 0.5 , Purpose GaAs FET Case Style "ML" 1.9±0.2 (0.075) 0.4 +0.1 ­0.05 (0.016) 0.4 +0.1 ­0.05 (0.016) 5
Fujitsu
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FUJITSU GaAs FET Fujitsu GaAs FET Amplifier nf 817 gaas fet marking D FCSI0598M200

h216

Abstract: HMC216MS8E HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Conversion Loss vs Temperature , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com 9 - 95 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Notes: MIXERS - DBL-BAL -
Hittite Microwave
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HMC216MS8E h216 gaas fet marking C gaas fet marking

H216

Abstract: HMC216MS8 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , On-line at www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz
Hittite Microwave
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marking c gaas fet

Siemens A 1458

Abstract: FET marking code 365 SIEMENS GaAs FET CLY15 -* Ts Permissible Pulse Load Plot »a* / Flo'. D C ; f i t pi , SIEMENS GaAs FET CLY15 Datasheet * Power am plifier for mobile phones * For frequencies , 09.96 SIEMENS GaAs FET CLY 15 Electrical characteristics (T4 = 25°C, unless otherwise , . Semiconductor Group 1660 09.96 SIEMENS GaAs FET CLY15 Output Charateristics VDStV , [dBm] Semiconductor Group 1661 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter
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Siemens A 1458 FET marking code 365 Q62702-L99

HMC216MS8

Abstract: h216 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Absolute Maximum Ratings RF / IF Input LO , HMC216MS8E are ultra miniature double-balanced FET mixers in 8 lead plastic surface mount packages (MSOP).
Hittite Microwave
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gaas fet marking a

Abstract: cly 2 GaAs FET CLY 2 GaAs FET , Aktiengesellschaft pg. 1/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 2/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 3/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET , Siemens Aktiengesellschaft pg. 4/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET
Siemens
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Q62702-L96 cly 2 GaAs FET siemens gaas fet marking code 5 SIEMENS MAG 6000

HMC216MS8

Abstract: HMC216MS8 / 216MS8E v02.0705 OBSOLETE PRODUCT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - , apps@hittite.com OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz MxN Spurious Outputs nLO mRF , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Evaluation Circuit Board , Functional Diagram General Description The HMC216MS8 & HMC216MS8E are ultra miniature double-balanced FET
Hittite Microwave
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siemens gaas fet

Abstract: TMS 1600 12.96 SIEMENS GaAs FET CLY 2 Output Characteristics 0,5 t ·Ptotoc Draincurrent [A , SIEMENS Datasheet GaAs FET CLY 2 * Power amplifier for mobile phones * For frequencies up , soldering point to the pcb. Semiconductor Group 1637 12.96 SIEMENS GaAs FET CLY 2 , /> Semiconductor Group 1639 12.96 SIEMENS GaAs FET CLY 2 VDS = 3 V typ. Common Source , Additional S-Parameter available on CD Semiconductor Group 1640 12.96 SIEMENS GaAs FET CLY
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TMS 1600 marking S221

gaas fet marking B

Abstract: FET GAAS marking a Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS , continuous load current (IL = 1.25 A) · High-speed switching time (ton = 2 ms TYP., toff = 0.05 ms TYP.) · 1 channel type (1 a output) · Designed for AC/DC switching line changer · Small and thin package
California Eastern Laboratories
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FET GAAS marking a PS720C PS720C-1A-F3 PN10778EJ01V0DS
Abstract: ¼š Gate 解 Source 回 Drain < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , =12GHz, Pin=-5dBm Note: P1B and Glp are tested with sampling inspection. 1 < Power GaAs FET , VOLTAGE VGS(V) 0.0 < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS (VDS , interested, please contact our sales offices. < Power GaAs FET > MGF1952A Leadless ceramic package Mitsubishi
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mcl-25 rf

Abstract: VNA-25 Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves
Mini-Circuits
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VNA-25 mcl-25 rf 414 monolithic amplifier VNA-25 equivalent 5253 1007 6635 fet 2002/95/EC RO4350 IPC/JEDECJ-STD-020C C/85RH
Abstract: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801E-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side. An ultra small flat-lead package has been provided which realizes a reduction in mounting area of , (Cout = 5 pF TYP.) · 1 channel type (1 a output) · Designed for AC/DC switching line changer · Low NEC
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PS7801E-1A-F3 PN10569EJ01V0DS

SIEMENS 230 92 O

Abstract: siemens gaas fet SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fm jn = 1.4 dB @ 4 G H z) * High gain , . Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HLEH PD 21 SIEMENS GaAs FET CFY 30 , 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA , ] Siemens Aktiengesellschaft pg. 3/6 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY 30 , SIEMENS GaAs FET Typical Common Source S-Parameters lD = 15mA Up = 3.5 V S21 Mag 2.43 2.43 2.43 2.43
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SIEMENS 230 92 O siemens 230 99 o siemens 230 98 O CFY 18 S11 SIEMENS Q62703-F97

NEC Ga FET marking L

Abstract: tamagawa Microelectronics GET-30484 Internal Visual Inspection (Low Noise GaAs FET) GET-30447 Internal Visual Inspection , symbol and part number as a minimum. Parts numbers for marking are showing in Table 1 and Fig. 1. 4.0 , normal handling and storage. 5.2 Marking Marking shall consists of the following: a. Carriers , Rank Function Form Package Marking NE24283B(L) â'" Low Noise HJFET packaged 83B 242 NE24200(L) â , '" Group A Test Data â'" Power Bum-in Delta Data Fig.3-1 Processing Flow Diagrams Low Noise GaAs FETs -
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GET-30749 NE674 NEC Ga FET marking L tamagawa NE272 mmic amplifier marking code N5 NE23383B FET marking code .N5 NE67400 A-120 MIL-S-19500 MIL-PRF-19500 PG101B

NO2-B1

Abstract: Solid State Relay OCMOS FET PS7802B-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R (6.3 pF · ) 1-ch Optical Coupled MOS FET DESCRIPTION The PS7802B-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side. An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 50% compared with , flat-lead package (4.2 (L) × 2.5 (W) × 1.85 (H) mm) · Low C × R (C × R = 6.3 pF · ) · 1 channel type (1 a
NEC
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NO2-B1 PS7802B-1A-F3 PN10725EJ01V0DS
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