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Part Manufacturer Description Datasheet BUY
TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP visit Texas Instruments
ISL6146AFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146DFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

gaas fet marking J

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source
Mitsubishi
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MGF4921AM MGF1302 gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet gaas fet marking J MGF1961A GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

FMC141401-02

Abstract: fujitsu gaas marking code APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

siemens gaas fet

Abstract: gaas fet marking J SIEMENS D a t a s h e e t GaAs FET CLY 5 * Pow er amplifier for mobile phones * For , saturation current VDS = 3 V i/ q s = 0 v GaAs FET Symbol min 600 C LY 5 typ 800 Electrical , SIEMENS GaAs FET CLY 5 Compression Power vs. Drain-Source Voltage f = 1.8GHz; IDS=0.5IDSS PUB , GaAs FET CLY 5 typ. V D S =3 V ·d = 350 m / S12 Zo = 50 Q S22 f GHz 0,1 0.15 0.2 , Semiconductor Group 1648 12.96 SIEMENS GaAs FET CLY 5 Total Power Dissipation pt o t = f
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siemens gaas fet S0S163 Q62702-L90

siemens gaas fet

Abstract: TMS 1600 SIEMENS Datasheet GaAs FET CLY 2 * Power amplifier for mobile phones * For frequencies up , soldering point to the pcb. Semiconductor Group 1637 12.96 SIEMENS GaAs FET CLY 2 , 12.96 SIEMENS GaAs FET CLY 2 Output Characteristics 0,5 t ·Ptotoc Draincurrent [A , /> Semiconductor Group 1639 12.96 SIEMENS GaAs FET CLY 2 VDS = 3 V typ. Common Source , Additional S-Parameter available on CD Semiconductor Group 1640 12.96 SIEMENS GaAs FET CLY
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TMS 1600 marking S221 Q62702-L96

mcl-25 rf

Abstract: VNA-25 Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves
Mini-Circuits
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VNA-25 mcl-25 rf 414 monolithic amplifier VNA-25 equivalent 5253 1007 6635 fet 2002/95/EC RO4350 IPC/JEDECJ-STD-020C C/85RH

rogers* RO4003C

Abstract: mgf1941 < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL , < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I , 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 < Power GaAs FET , /Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL
Mitsubishi
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rogers* RO4003C mgf1941 137 marking Micro-X gaas fet micro-X gaas fet micro-X Package GD-32

gaas fet marking J

Abstract: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , with sampling inspection. Gs/NFmin are not tested. 1 < Power GaAs FET > MGF1941AL Micro-X , 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD-32) < Power GaAs FET > MGF1941AL , CURRENT ID(mA) Ta=25deg.C VDS=3V 90 < Power GaAs FET > MGF1941AL Micro-X type plastic , =0.508mm) < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1
Mitsubishi
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LOT CODE NE NEC

Abstract: NEC TRANSISTOR MARKING CODE Silicon bipolar twin transistor NE×××18 GaAs FET, HJ-FET NE×××M01 GaAs FET, HJ-FET ICs µPC××××TB Silicon bipolar analog IC µPG×××TB GaAs IC 5 2. 2.1 SPECIFICATIONS TAPE DIMENSIONS t H A E J K0 K1 K C W B D D1 G F Length Unit: mm, Angle Unit: deg. ITEM SYMBOL SIZE Length 6 F 4.0±0.1 J 1.5 Pitch H , . 2.2 REEL DIMENSIONS AND MARKING
NEC
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LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC nec lot number on packing label code marking NEC hjfet P10687EJ4V0IF00

nec mercury relay

Abstract: PS7801J-1A DATA SHEET Solid State Relay OCMOS FET PS7801J-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C×R 3pF · , 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801J-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side , output) 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET · Designed for AC/DC switching line , MARKING EXAMPLE Last number of type No. : 1J *1 1J Bar : Pb-Free N 603 No.1 pin mark
NEC
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PS7801J-1A-F3 nec mercury relay diode marking BDE on semiconductor PS7801J-1A-F4

CLY10

Abstract: SIEMENS D a t a s h e e t GaAs FET CLY10 * Power amplifier for mobile phones * For , Group 1652 12.96 SIEMENS GaAs FET CLY10 Electrical characteristics (T^ = 25°C, unless , Semiconductor Group 1653 12.96 SIEMENS GaAs FET CLY10 Compression Power vs. Drain-Source , Drain-Source Voltage [V] Semiconductor Group 1654 12.96 SIEMENS GaAs FET CLY10 typ , Semiconductor Group 1655 12.96 SIEMENS GaAs FET CLY10 typ. Common Source S-Parameters Vq s =
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Q62702-L94

3SK184

Abstract: gaas fet marking a  3SK184 3SK184 GaAs N MES FET/GaAs N-Channel MES FET UHF lMHt*Mtffl/UHF Low- noise Amplifier â  Â» «Features â'¢ »ffftftNP«'fti>./'Low NF â'¢ AftfirMCfcaO'Stv*. /Low Om â'¢ ^\X}iMff-ü"lKL/Par low volläÃe operation â'¢ try* WHIZ i b fl»# AA'»JÃ./MlNI Type package suitable for , T- â'"55â'" * 150 â'¢c Unit: mm -I if t4?U#-«J 14 â'¢ (¡ J ° 1 : Source 2 : Dram 3 , ) 8.5-17 15-21 19-30 25-35 Matkins 3 CP 3CQ 3 CR 3 CS JB£«*E#(«)/Marking Symbol Type No IM
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FET GAAS marking a FET marking FL CM 8517 uhf fet vw t4 3Sk184 s 15/-15V

NEC Ga FET marking L

Abstract: NE76184B DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion , fields, because this device is MES FET with GaAs shottky barrier gate. 5 NE76184B Caution The , NE76184B-T1A MARKING 1.78 ±0.2 ORDERING INFORMATION Tape & reel 5000 pcs./reel 1.0 ±0.2 0.5 , . at f = 4 GHz 2 J J 4 0.4 MAX. 3 1.0 ±0.2 VDS VGSO VGDO ID Ptot Tch Tstg
NEC
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NEC Ga FET marking L NEC Ga FET marking Rf nec gaas fet marking NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET NE76184B-T1

Sony 104A

Abstract: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is , amplifier, mixer and oscillator M-254 2 d : Dra ¡ n Structure GaAs N-channel field-effect , V g2s Id 55 Tch 150 Tstg -55 to +150 Pd 150 V V V mA â'¢c e C mW Marking Sony , ) Ão - Drain current u b î\ O j o O (mA) m w W 0 5à 3 Id VS
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Sony 104A 900MH

fet dual gate sot143

Abstract: SGM2014M SONY. SGM2014M GaAs N-channel Dual Gate MES FET_ i-or the availability or this product, please contact the saies officéï| Description The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV , , mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor , mW Marking Sony reserves the right to change products and specifications without prior notice. This
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fet dual gate sot143
Abstract: reflective FET MMIC switch. This switch consists of a GaAs SP2T chip with integral driver. It is ideal for , GaAs 1C SP2T Reflective Switch With Integral Driver DC-2 GHz Features Integral Driver ± 5 V , Specifications subject to change without notice. 3/99A GaAs 1C SP2T Reflective Switch With Integral Driver DC , . Frequency Truth Table Control Logic V ctrl Absolute Maximum Ratings Condition J 1 to J2 Insertion , 0.395 (10.03 mm) 0.355 (9.02 mm) SQ. 0.088 (2.24 m m )' 90TYP. S: 0.200 j- (5.08 m m )-J -
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AN002R2-29 AN002R2-53

gaas fet marking a

Abstract: AE002M2-29 GaAs IC SP2T Non-Reflective Switch With Driver 20 MHz-2 GHz EB Alpha AE002M2-29, AE002M2 , of Meeting MIL-STD Requirements4 Description The AE002M2-29 is a SP2T non-reflective FET MMIC switch. This switch consists of a GaAs SP2T chip and a silicon CMOS driver. It operates with 5 V bias and , subject to change without notice. 3/99A 1 GaAs IC SP2T Non-Reflective Switch With Driver 20 MHz-2 GHz , voltage. â 53 0.088 (2.24 mm)- 0.395 (10.03 mm) 0.355 (9.02 mm) SQ. m 0.200 j- (5.08 mm)-i _J â
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AE002M2-53
Abstract: non-reflective FET MMIC switch. This switch consists of a GaAs SP2T chip and a silicon CMOS driver. It operates , GaAs 1C SP2T Non-Reflective Switch With Driver 20 MHz-2 GHz Features Single 5 V Supply Voltage , · www.alphaind.com Specifications subject to change without notice. 3/99A GaAs 1C SP2T , Loss Isolation Condition J i to J3 Isolation Insertion Loss Absolute Maximum Ratings Characteristic , Storage Temperature (T st ) Thermal Resistance (0 j C) Do not allow control voltage to exceed bias -
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Abstract: ±5%. a p p l ic a t io n s â  GaAs FET Bias Generators â  Negative Supply Generators â , Part Count, Negative -4.1V Generator -4.1V Output GaAs FET Bias Generator ± U n â' T " 47iiF , flppucnnons ImVp.p Ripple, -4.1V Output GaAs FET Bias Generator SHDN SENSE VCC CPouT C2 0n , C GaAs NSMIT TRANSMITTER -J T Dimension in inches (millimeters) unless otherwise noted , Final Electrical Specifications r jr w im J k v / LTC1550/LTC1551 Low Noise, S w -
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1550/LTC1551 LTC1550 LTC1551 LTC1550/ 5518M 1550/LTC
Abstract: * 7 ^ M 3 . 7 hMOS FET, GaAs MES FET, K H ( D p ap t t s i i T \ v 3 "j h + -A , Vy'T- 'J FET FETs M z> - Tapi ng Style TX O 10- o rö - U U o rö - ^ ü U , -pin) Package FET FETs S i -S(4 ^ ffl ÌÉ Application î )FET® |^`: ?Æ!ppS - 12 % Marking Symbol , > h i ! M f c c ; : f t E 6 L t , â t t - ç f c t / J v f f l / 't x V a > ' i f c £ j Ë « > T £ i ' `'J î l / c o # 0 S ( 2 1 2 5 * -f 7 ) Outline 0.425 I* i 2.1±0.1 1 . 25± 0.1 0-425 -
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A3SK271

NEC Ga FET marking Rf

Abstract: nec gaas fet marking DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. PACKAGE DIMENSIONS (Unit: mm , reel 5000 pcs./reel MARKING J ABSO LUTE MAXIMUM RATINGS (T a = 25 °C) Drain to Source Voltage Gate , ". PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky
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IR30-00
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