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gaas fet marking B

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Abstract: Marking manner of MITSUBISHI GaAs FET QL-1104E-A QL-1104E-A (July/2008) [Leadless ceramic package] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A QL-1104E-A (July/2008) [4pin flat lead package] GD-30 GD-30 Top View Source ... Mitsubishi
Original
datasheet

7 pages,
248.56 Kb

MGF4851A MGF1907 mitsubishi marking lot number MGF4961 mitsubishi top side marking mitsubishi gaAs gaas fet marking MGF4921AM FET GAAS marking a QL-1104E-A Micro-X marking "K" MGF1963A MGF1961A MGF1964A gaas fet micro-X Package gaas fet marking J marking K gaas fet gaas fet marking a gaas fet micro-X Package marking gaas fet marking B GD-26 TEXT
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Abstract: ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw , APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User ... OCR Scan
datasheet

10 pages,
376.33 Kb

fll171 2527L-20 5964-18DA gaas fet marking B FMC1414P1-02 FLL-300-1 6472-6D FET marking code gaas fet marking a FLL200-2 fll300ip-2 FLL300-1 FLL300-2 FUJITSU L101 fujitsu x51 FLL55 FSX52WF Fujitsu K022 FMC141401-02 fujitsu gaas marking code TEXT
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Abstract: Marking A : Part No. B : Lot No. 2.9 A Bk (2) 1.9 B 0.8 0.8 0.3 (1) (3 , (3): Source (4): Drain Marking A : Part No. B : Lot No. (in mm) 1 cABSOLUTE MAXIMUM , 1.0 B 0.5 A 1.5 1.5 Marking Pin (1):Gate A :Part No. (2):Source B :Lot No. Plastic with Heat Sink (3):Drain Marking Pin (1):Gate A:Part No. (2):Source B:Lot No. Plastic , Ck 2.5 B 1.0 A 0.5 4.5 2.1 Marking Pin (1):Gate A:Part No. (2):Source B:Lot ... Original
datasheet

22 pages,
380.05 Kb

8644 pin diagram of 8355 E173 e59 11 045 A 27631 transistor Power AMPLIFIER 6012 murata gaas field effect transistor 28428 E137398 0280 130 026 FET E108 mc34063 step down external transistor E176 fet FET E119 E176 field effect transistor e170315 OF FET E176 E176 D 8243 HC XMFP1-M3 TEXT
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Abstract: Microelectronics GET-30484 GET-30484 Internal Visual Inspection (Low Noise GaAs FET) GET-30447 GET-30447 Internal Visual Inspection , GaAs FET Examination or Test MH-STD-750 MH-STD-750 METHOD Condition Reliability Grade GRADEL Internal , , Kanagawa, 211-8666 Specification Control Drawing of Grade L GaAs Devices for Satellite Applications , Design and Construction 3.4 Performance 3.5 Package Outline 3.6 Chip Drawing 3.7 Marking (Packaged , Submittal 5.0 Preparation for Delivery 5.1 Packaging 5.2 Marking GET-30749 GET-30749, Rev.C, Page 3 of 22 ... OCR Scan
datasheet

24 pages,
798.26 Kb

NE24200 NE24283B UPG506B ne27283 FET GAAS marking a GET-30749 gaas fet marking NEC Ga FET "marking M" NE674 marking n5 amplifier gaas fet marking a NE292 ne29200 FET marking code .N5 NE23383B NE272 mmic amplifier marking code N5 gaas fet marking B tamagawa NEC Ga FET marking L TEXT
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Abstract: SIEMENS GaAs FET CLY15 CLY15 Datasheet * Power am plifier for mobile phones * For frequencies , 09.96 SIEMENS GaAs FET CLY 15 Electrical characteristics (T4 = 25°C, unless otherwise , . Semiconductor Group 1660 09.96 SIEMENS GaAs FET CLY15 CLY15 Output Charateristics VDStV , [dBm] Semiconductor Group 1661 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter , 1662 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter V d s = 5V Iq =1.4A Zo ... OCR Scan
datasheet

7 pages,
162.28 Kb

FET marking code 365 Siemens A 1458 CLY15 TEXT
datasheet frame
Abstract: Solid State Relay OCMOS FET PS720C-1A PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS , 2009 NS PS720C-1A PS720C-1A PACKAGE DIMENSIONS (UNIT: mm) MARKING EXAMPLE (LASER MARKING) PHOTOCOUPLER , Current MOS FET Isolation Voltage *1 *3 *1 PW = 100 s, Duty Cycle = 1% *2 PW = 100 ms, 1 ... California Eastern Laboratories
Original
datasheet

9 pages,
616.56 Kb

PS720C FET GAAS marking a gaas fet marking B PS720C-1A TEXT
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Abstract: SIEMENS D a t a s h e e t GaAs FET CLY 5 * Pow er amplifier for mobile phones * For , saturation current VDS = 3 V i/ q s = 0 v GaAs FET Symbol min 600 C LY 5 typ 800 Electrical , SIEMENS GaAs FET CLY 5 Compression Power vs. Drain-Source Voltage f = 1.8GHz; IDS=0.5IDSS PUB , GaAs FET CLY 5 typ. V D S =3 V ·d = 350 m / S12 Zo = 50 Q S22 f GHz 0,1 0.15 0.2 , Semiconductor Group 1648 12.96 SIEMENS GaAs FET CLY 5 Total Power Dissipation pt o t = f ... OCR Scan
datasheet

8 pages,
151.57 Kb

gaas fet marking J siemens gaas fet TEXT
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Abstract: .45 7.2 Power GaAs FET, GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET ... NEC
Original
datasheet

73 pages,
1338.38 Kb

FMCW FET GAAS marking a smd code marking NEC rf transistor marking code R37 SMD Transistor t76 transistor smd transistor marking T79 ghz MARKING SMD npn TRANSISTOR R44 marking code C1E mmic marking code R33 SMD Transistor NE582M03 smd code marking NEC 817 smd code marking C1E smd transistor g1-L NE3210SO1 NE92039 g2b 6-pin smd transistor smd c1y FMCW Radar TRANSISTOR SMD MARKING CODE s01 marking code C1E SMD Transistor TEXT
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Abstract: negative voltage to bias the gate of GaAs FET, and internally provides protection circuit that can protect the FET devices during supply voltage transient. So it is very popular in satellite receiver front end block.  FEATURES * Built in FET device protection circuit * Adjustable FET device , UNISONIC TECHNOLOGIES CO., LTD L8001 L8001 Preliminary CMOS IC FET BIAS CONTROLLER ï , . It provides stable drain and gate bias conditions for GaAs or HEMT FETs. The UTC L8001 L8001, provide six ... Unisonic Technologies
Original
datasheet

5 pages,
189.14 Kb

L8001 TEXT
datasheet frame
Abstract: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves ... Mini-Circuits
Original
datasheet

13 pages,
362.11 Kb

MCL 25 marking K gaas fet marking f25 6635 fet VNA-25 equivalent VNA-25 mcl-25 rf 5253 1007 414 monolithic amplifier 2002/95/EC TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
MR Head Bias Digital camera CCD bias LCD bias GaAs FET bias Positive to negative Size Package Marking Type Pins MSL SPICE IBIS Qty $US each LM2611EVAL LM2611EVAL low cost. High efficiency is achieved through the use of a low R DS(ON) FET. The LM2611 LM2611 features a B Current Limit 1.2A 0.9A R DS(ON) 0.5 0.7 Features 1.4MHz switching frequency Low R DS(ON) DMOS FET 1mVp-p output ripple -5V at 300mA from 5V
/datasheets/files/national/htm/nsc03152-v5.htm
National 16/08/2002 20.38 Kb HTM nsc03152-v5.htm
MR Head Bias Digital camera CCD bias LCD bias GaAs FET bias Positive to negative Size Package Marking Type Pins MSL SPICE IBIS Qty $US each LM2611EVAL LM2611EVAL low cost. High efficiency is achieved through the use of a low R DS(ON) FET. The LM2611 LM2611 features a B Current Limit 1.2A 0.9A R DS(ON) 0.5 0.7 Features 1.4MHz switching frequency Low R DS(ON) DMOS FET 1mVp-p output ripple -5V at 300mA from 5V
/datasheets/files/national/htm/nsc02049-v5.htm
National 01/11/2002 23.33 Kb HTM nsc02049-v5.htm
CCD bias LCD bias GaAs FET bias Positive to negative conversion Reliability Std Pack Size Package Marking Type Pins MSL/Lead-Free Availability Lead Time through the use of a low R DS(ON) FET. The LM2611 LM2611 features a shutdown pin, which can be activated small SOT23-5 package. It comes in two grades:   Grade A Grade B Current Limit 1.2A DS(ON) DMOS FET 1mVp-p output ripple -5V at 300mA from 5V input Better regulation than a
/datasheets/files/national/lm2611.htm
National 27/02/2004 17.34 Kb HTM lm2611.htm
No abstract text available
/download/64758682-169536ZC/laser.zip ()
Infineon 19/02/2000 30.12 Kb ZIP laser.zip
Bias Digital camera CCD bias LCD bias GaAs FET bias Positive to negative conversion Orders Budgetary Pricing Std Pack Size Package Marking Type Pins MSL/Lead-Free is achieved through the use of a low R DS(ON) FET. The LM2611 LM2611 features a shutdown pin, which can is available is a small SOT23-5 package. It comes in two grades:   Grade A Grade B switching frequency Low R DS(ON) DMOS FET 1mVp-p output ripple -5V at 300mA from 5V input
/datasheets/files/national/lm2611.html
National 25/09/2003 17.84 Kb HTML lm2611.html
CALL "GaAs FET @3217" CALL "Silicon MMICs @3218" END MENUE "Silicon Bipolar Transistors @3211" FILE 52" "A0908 A0908" FILE "CGY 62" "321608" END MENUE "GaAs FET @3217" FILE "CFY 10" "A0780 A0780" FILE "CFY /Stepper Motor Driver @31422" FILE "TLE 4202 B" "TLE4202B TLE4202B" FILE "TLE 4203 /S" "TLE4203 TLE4203" FILE "TLE 4205 FILE "TCA 105 B" "A0268 A0268" FILE "TCA 105 G" "A0268 A0268" END MENUE "Window Discriminator @31572" FILE "TCA 965 B /BG" "A0270 A0270" END MENUE "ICs for Inductive Proximity Switches @3158" CALL "ICs for Inductive
/datasheets/files/siemens/setup/hlmenu-v2.def
Siemens 16/03/1994 77.97 Kb DEF hlmenu-v2.def
No abstract text available
/datasheets/files/philips/search/docindex.txt
Philips 25/04/2003 954.24 Kb TXT docindex.txt
No abstract text available
/datasheets/files/philips/search/docindex-v2.txt
Philips 14/02/2002 998.47 Kb TXT docindex-v2.txt
No abstract text available
/datasheets/files/philips/search/docindex-v1.txt
Philips 16/06/2005 2589.32 Kb TXT docindex-v1.txt
PHENOMENON DIFFERENT 10X SLEWING LINES THIRD HAS DIP IMPORTANT FEATURES FET UPON TIE POORLY DOES OBSERVATION LEAD DIFFERENT 10V PIERCE PICKS ADDS HAS RESONATOR 25PF RESISTIVE IMPORTANT INSULATING UNIVERSALLY FET FET R.A POTENTIOMETERS INTEGRATE SIDE DIODE SEPTEMBER RUNS SELF GREATER DEPOSITS DOES RECOVERY PHASE FET UPON DIODE RUNS NUMBER SELF DEGRADE SCALED ACQUIRED FREQUENCY PROPER DIFFICULT INTEGRATING CORRESPONDS DIE EXPRESSED STABILITY LEAD 10V COLLECTORS HAS IMPORTANT FET FEATURES DIODE SIDE NUMBER GREATER
/datasheets/files/linear/lview3/parts-v1.edb
Linear 08/10/1998 5000.33 Kb EDB parts-v1.edb