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Part Manufacturer Description Datasheet BUY
TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP visit Texas Instruments
ISL6146AFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146DFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFRZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

gaas fet marking B

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source
Mitsubishi
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MGF4921AM MGF1302 gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet gaas fet marking J MGF1961A GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

FMC141401-02

Abstract: fujitsu gaas marking code ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw , APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

XMFP1-M3

Abstract: D 8243 HC Marking A : Part No. B : Lot No. 2.9 A Bk (2) 1.9 B 0.8 0.8 0.3 (1) (3 , (3): Source (4): Drain Marking A : Part No. B : Lot No. (in mm) 1 cABSOLUTE MAXIMUM , 1.0 B 0.5 A 1.5 1.5 Marking Pin (1):Gate A :Part No. (2):Source B :Lot No. Plastic with Heat Sink (3):Drain Marking Pin (1):Gate A:Part No. (2):Source B:Lot No. Plastic , Ck 2.5 B 1.0 A 0.5 4.5 2.1 Marking Pin (1):Gate A:Part No. (2):Source B:Lot
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XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 E176 field effect transistor

NEC Ga FET marking L

Abstract: tamagawa Microelectronics GET-30484 Internal Visual Inspection (Low Noise GaAs FET) GET-30447 Internal Visual Inspection , GaAs FET Examination or Test MH-STD-750 METHOD Condition Reliability Grade GRADEL Internal , , Kanagawa, 211-8666 Specification Control Drawing of Grade L GaAs Devices for Satellite Applications , Design and Construction 3.4 Performance 3.5 Package Outline 3.6 Chip Drawing 3.7 Marking (Packaged , Submittal 5.0 Preparation for Delivery 5.1 Packaging 5.2 Marking GET-30749, Rev.C, Page 3 of 22
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NE674 NEC Ga FET marking L tamagawa NE272 mmic amplifier marking code N5 NE23383B FET marking code .N5 NE67400 A-120 MIL-S-19500 MIL-PRF-19500 PG101B PG101P

Siemens A 1458

Abstract: FET marking code 365 SIEMENS GaAs FET CLY15 Datasheet * Power am plifier for mobile phones * For frequencies , 09.96 SIEMENS GaAs FET CLY 15 Electrical characteristics (T4 = 25°C, unless otherwise , . Semiconductor Group 1660 09.96 SIEMENS GaAs FET CLY15 Output Charateristics VDStV , [dBm] Semiconductor Group 1661 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter , 1662 09.96 SIEMENS GaAs FET typ. Common Source S-Parameter V d s = 5V Iq =1.4A Zo
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Siemens A 1458 FET marking code 365 Q62702-L99

gaas fet marking B

Abstract: FET GAAS marking a Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS , 2009 NS PS720C-1A PACKAGE DIMENSIONS (UNIT: mm) MARKING EXAMPLE (LASER MARKING) PHOTOCOUPLER , Current MOS FET Isolation Voltage *1 *3 *1 PW = 100 s, Duty Cycle = 1% *2 PW = 100 ms, 1
California Eastern Laboratories
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FET GAAS marking a PS720C PS720C-1A-F3 PN10778EJ01V0DS

siemens gaas fet

Abstract: gaas fet marking J SIEMENS D a t a s h e e t GaAs FET CLY 5 * Pow er amplifier for mobile phones * For , saturation current VDS = 3 V i/ q s = 0 v GaAs FET Symbol min 600 C LY 5 typ 800 Electrical , SIEMENS GaAs FET CLY 5 Compression Power vs. Drain-Source Voltage f = 1.8GHz; IDS=0.5IDSS PUB , GaAs FET CLY 5 typ. V D S =3 V ·d = 350 m / S12 Zo = 50 Q S22 f GHz 0,1 0.15 0.2 , Semiconductor Group 1648 12.96 SIEMENS GaAs FET CLY 5 Total Power Dissipation pt o t = f
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siemens gaas fet S0S163 Q62702-L90

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 .45 7.2 Power GaAs FET, GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET
NEC
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marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y g2b 6-pin smd NE92039 P14740 P14740EE5V0PF00
Abstract: negative voltage to bias the gate of GaAs FET, and internally provides protection circuit that can protect the FET devices during supply voltage transient. So it is very popular in satellite receiver front end block.  FEATURES * Built in FET device protection circuit * Adjustable FET device , UNISONIC TECHNOLOGIES CO., LTD L8001 Preliminary CMOS IC FET BIAS CONTROLLER ï , . It provides stable drain and gate bias conditions for GaAs or HEMT FETs. The UTC L8001, provide six Unisonic Technologies
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L8001G-R20-R SSOP-20 QW-R502-938

mcl-25 rf

Abstract: VNA-25 Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves
Mini-Circuits
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VNA-25 mcl-25 rf 414 monolithic amplifier VNA-25 equivalent 5253 1007 6635 fet 2002/95/EC RO4350 IPC/JEDECJ-STD-020C C/85RH

UAA 1006

Abstract: manual* cygnus sl 5000 .56 Power GaAs FET, GaAs MMIC, GaAs MCM , ) .59 GaAs MES FET , .60 GaAs MES FET Chip .60 GaAs MES FET .60 UHF Dual Gate GaAs MES FET
NEC
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UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G gaas fet T79 pc1658 D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925

NO2-B1

Abstract: Solid State Relay OCMOS FET PS7802B-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R (6.3 pF · ) 1-ch Optical Coupled MOS FET DESCRIPTION The PS7802B-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side. An ultra small , . MOS FET 4. MOS FET APPLICATIONS · Measurement equipment 1 2 Document No. PN10725EJ01V0DS (1st , +0.3 ­0.4 0.4±0.1 1.27 0.2±0.1 MARKING EXAMPLE 2B N 801 No.1 pin mark (Nicked corner
NEC
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NO2-B1 PS7802B-1A-F3

NEC Relay Date Codes

Abstract: FET marking codes DATA SHEET Solid State Relay OCMOS FET PS7241-2B 8-PIN SOP, 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 2-ch Optical Coupled MOS FET DESCRIPTION The PS7241-2B is a solid state relay containing GaAs LEDs on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the , . FEATURES · 2 channel type (1 b + 1 b output) · Low LED operating current (IF = 2 mA) · Designed for AC/DC , FET 6. MOS FET 7. MOS FET 8. MOS FET 1 2 3 7.0±0.3 4.4 4 2.05+0.08 ­0.05 0.15+0.10
NEC
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NEC Relay Date Codes FET marking codes NEC MARKING codes nec gaas fet marking PS7241-2B-F3 E72422 PN10305EJ01V1DS P13265EJ4V0DS00
Abstract: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT -NEPOC 1-ch Optical Coupled MOS FET DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input , PIN CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET APPLICATIONS · , 0.15+0.10 ­0.05 2.05+0.08 ­0.05 0.05+0.08 ­0.05 2.54 0.40+0.10 ­0.05 0.25 M 0.5±0.3 MARKING NEC
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M8E0904E

P0110009P

Abstract: Susumu RL series part Marking P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Features Functional Diagram , of devices GaAs Power FET 1000 KP029J · Wireless communication system · Cellular, PCS , Units P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Typical Characteristics , Technical Note 2W GaAs Power FET (Pb-Free Type) 90 3.0 45 4.0 1.2GHz 2.0 S21 4.0 , P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Ids=400mA Ids=350mA 80 80 60
Eudyna Devices
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P0110009P Susumu RL series part Marking RR0816 marking c7 sot-89

P0110003P

Abstract: P0120003P P0120003P Technical Note 800mW GaAs Power FET (Pb-Free Type) Features Functional Diagram , of devices GaAs Power FET 1000 KP023J ·Wireless communication system ·Cellular, PCS, PHS , Site : www.eudyna.com Units P0120003P Technical Note 800mW GaAs Power FET (Pb-Free Type , Web Site : www.eudyna.com P0120003P Technical Note 800mW GaAs Power FET (Pb-Free Type) 90 , 2006-11 Web Site : www.eudyna.com P0120003P Technical Note 800mW GaAs Power FET (Pb-Free Type
Eudyna Devices
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P0110003P GaAS fet sot89 ISO-14001

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 ) GaAs Device products HJ-FETs (Hetero Junction FET) Discretes FETs MES FETs Power FETs , covers "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and "Microwave GaAs Devices". Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are , . 36 3.2.4 Low Noise GaAs FETs, HBTs, HJ-FETs , ). 55 6. MARKING/PART NUMBER
NEC
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nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram marking code C1H mmic G0706 PX10727EJ02V0PF

LOT CODE NE NEC

Abstract: NEC TRANSISTOR MARKING CODE Silicon bipolar twin transistor NE×××18 GaAs FET, HJ-FET NE×××M01 GaAs FET, HJ-FET ICs µPC××××TB Silicon bipolar analog IC µPG×××TB GaAs IC 5 2. 2.1 SPECIFICATIONS TAPE DIMENSIONS t H A E J K0 K1 K C W B D D1 G F Length Unit: mm , AND MARKING 1 A C B 2 TYPE CLASS label W Length Unit: mm, Angle Unit: deg , . 2.2 REEL DIMENSIONS AND MARKING
NEC
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LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC nec lot number on packing label code marking NEC hjfet P10687EJ4V0IF00

F31Z

Abstract: SPF-3143Z SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS , -3143Z is a high performance 0.5m pHEMT Gallium Arsenide FET. This 600m device is ideally biased at 3V, 20mA , applications. +17.7dBm P1dB (5V,40mA) Low Current, Low Cost SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT , ) Specification Typ. Applications Fixed Wireless, Pager Systems W GaAs MESFET 40 35 30 25 20 15 10 5 0 NE GaAs HBT Typical Gain Performance Gain, Gmax (dB) Optimum Technology
RF Micro Devices
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F31Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143 DS091103
Abstract: . PS7901D-1A -NEPOC Series- (OCMOS FET) 4-PIN SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (0.75 pF) 1-ch Optical Coupled MOS FET R08DS0034EJ0001 Rev.0.01 Feb 17, 2011 DESCRIPTION The PS7901D-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and , PIN CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET 1 2 , Title PACKAGE DIMENSIONS (UNIT: mm) 2.3±0.2 0.2 3.0 MAX. 0.4 1.27 MARKING EXAMPLE R Renesas Electronics
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PS7901D-1A-F3
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