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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

g10 smd transistor

Catalog Datasheet MFG & Type PDF Document Tags

g10 smd transistor

Abstract: transistor c347 Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C · Short circuit rated - , control and other applications requiring short circuit withstand capability. SMD-220 Absolute , 40 80 - Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material) For , %. Refer to Section D for the following: Package Outline 2 - SMD-220 Section D - page D-12 C-348 To
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SMD-220 g10 smd transistor transistor c347 SMD Transistor g10 C348 gFE smd diode AN-994

g10 smd transistor

Abstract: C347 Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C · Short circuit rated - 10µs @ 125°C, V GE = 15V · Switching-loss , applications requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings Parameter , Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended , %. Refer to Section D for the following: Package Outline 2 - SMD-220 Section D - page D-12 C-348 Pulse
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C347 c347 transistor D-12
Abstract: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features â'¢ Short circuit rated - 10ps @ 125°C, V ge = 15V â , other applications requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings , " square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to , Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD-220 Section D - page D-12 C -
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4AS54S2 C-340 MA55452
Abstract: International ^ R e c tifie r P D - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c â'¢ Short circuit rated - 10ps @ 125°C, V , circuit withstand capability. SMD-220 Absolute Maximum Ratings Parameter Max. lc @ Tc = , 80 Weight 2 (0.07) °C/W g (°z ) * When mounted on 1â' square PCB (FR-4 or G-10 , Outline 2 - SMD-220 Section D - page D-12 C-872 4A5S452 D020bb2 bTf i 100 Vce -
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C-870 C-871 S5452

LE C346

Abstract: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features â'¢ Short circuit rated - 10 ms @ 125°C, Vqe = 15V â , suited for motor control and other applications requiring short circuit withstand capability. SMD , ) ' When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering , Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD-220 Section D - page D
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LE C346 C-346 S54S2

transistor smd MJ 145

Abstract: g10 smd transistor International [iÖ R 1 Rectifier INSULATED GATE BIPOLAR TRANSISTOR Features · Short circuit rated - 10ps @ 125°C, Vge = 15V · Switching-loss rating inciudes all "tail* losses · Optimized for high , suited for motor control and other applications requiring short circuit withstand capability. SMD , - ' When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering , Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD-220 Section D - page D-12 C-860
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transistor smd MJ 145 transistor smd bh SMD Transistor 502 c858 IRGBC20K-S C-858

transistor C2075

Abstract: g10 smd transistor APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a , '˜C . ac - » OUTPUT TRANSISTOR Power dissipation @ 25°C . . 150 mW Derate , Vn= 3 .0 V - 10 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVcso 30 , TRANSISTOR OUTPUT OPTOCOUPLER T -4 1 -8 3 ELECTRICAL CHARACTERISTIC CURVES {Fa~ 25'C Unless Otherwise , TECHNOLOGIES S7E D 74tbaSl G00344b S VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER Tâ'" 41-83
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transistor C2075 SMD Transistor 1c E50151 C2090 C2079 DDD33 MCT9001
Abstract: TRANSISTOR V ces = 600V VcE(sat) ^ 3.0V @ VGE = 15V, lc = 24A Description Insulated Gate Bipolar , °c/w 9 (°z) - 2 (0.07) ' When mounted on 1" square PCB (FR-4 or G-10 Material) For , . Refer to Section D for the following: Package Outline 2 - SMD-220 Section D - page D-12 -
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100-C
Abstract: International IM] Rectifier Preliminary Data Sheet PD - 9.1135 IRGBC40M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features â'¢ Short circuit rated - 10jjs @ 125°C, V ge = 15V â'¢ Switching-loss rating includes all "tail" losses â'¢ Optimized for medium operating , PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to application , %. Refer to Section D for the following: Package Outline 2 - SMD-220 Section D - page D-12 C-348 â  4 -
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transistor c1684

Abstract: linearly from 25°C . .1.2 mW/°C OUTPUT TRANSISTOR Power dissipation @ 25 , Cj Reverse leakage current Ir 0.35 10 OUTPUT TRANSISTOR DC forward current gain , 0 0 0 3 3 0 0 1 â  SURFACE MOUNT OPTIONS 7 ~ 9 û ~ Z Ç > SMD OPTION 100 PACKAGE , with certain minimum quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic MCT62-100 Dual Transistor Output HCPL
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transistor c1684 MCT272

SMD Transistor AFR

Abstract: Derate linearly from 25°C . 0.8 mW/'C OUTPUT TRANSISTOR Power dissipation @ 25 , V, f= 1 MHz M V r= 3 .0 V .65 Ir 0.35 hre 10 420 OUTPUT TRANSISTOR DC , TECHNOLOGIES â  74btiaSl 0 0 0 3 3 0 0 1 â  SURFACE MOUNT OPTIONS 7~9û~ZÇ> SMD OPTION 100 , certain minimum quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic MCT62-100 Dual Transistor Output HCPL
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SMD Transistor AFR T-41-83 MCT277 C2Q79

transistor 41 74t

Abstract: smd TRANSISTOR 27e linearly from 25'C .1,8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25 , 65 10 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVceo 30 45 V lc , TECHNOLOGIES â  ?4btiasi G o o 3 3 a a i â  SURFACE MOUNT OPTIONS 7 ~ 9û~ZÇ> SMD OPTION 100 , with certain minimum quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic MCT62-100 Dual Transistor Output HCPL
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transistor 41 74t smd TRANSISTOR 27e MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200 MCT2201 MCT2202
Abstract: OUTPUT TRANSISTOR Power dissipation @ 25°C . . 200 mW Derate linearly from 25â'™C , TRANSISTOR DC forward current gain TEST CONDITIONS -1 .8 3.0 65 Reverse leakage current , TECHNOLOGIES â  ?4btiasi G o o 3 3 a a i â  SURFACE MOUNT OPTIONS 7~9û~ZÇ> SMD OPTION 100 , minimum quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic MCT62-100 Dual Transistor Output HCPL-2631-100 Dual -
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MCT276

g10 smd transistor

Abstract: SMD Transistor g10 TMOS Dual N-Channel Field Effect Transistor Micro8,u devices are an advanced series of power MOSFETs , -4/G-10 board using min. recommended footprint, based on PD in 1 die, 1 die operating. (Vqs = 10 v- ® Steady State) When mounted on FR-4/G-10 board using min. recommended footprint, based on PD in 1 die , comparison to the other SMD devices. (V qq = 10 V, @ Steady State) Repetitive rating; pulse width limited by , Motorola TMOS Power MOSFET Transistor Device Data M TD F1N 03HD ELECTRICAL CHARACTERISTICS O a = 25
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f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking EIA-481-1

transistor c925

Abstract: smd transistor c928 bitemational [«»IRectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features · Short circuit rated -1 Ops @125°C, VqE= 15V P D - 9.1142 IRGBC30KD2-S Short Circuit , capability. SMD-220 Absolute Maximum Ratings Parameter Vces lc @ Tc = 25°C lc @Tc = 100°C IC M Ilm If , on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to , Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 2 - SMD-220 Section D - page D
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transistor c925 smd transistor c928 transistor c923 c927 DIODE C921 diode c928 C-925 C-926 C-927 C-928

AN-994

Abstract: IRGBC30K-S PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C · Short circuit rated - 10µs @ 125°C, VGE = 15V · Switching-loss rating includes , other applications requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings , , typical socket mount Weight * When mounted on 1" square PCB (FR-4 or G-10 Material) Min. Typ , ) 0.69 (0.027) 2.89 (0.114) 2.64 (0.104) 2.54 (0.100) 5.08 (0.200) REF. OUTLINE SMD
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GC smd transistor

c918

Abstract: C918 diode International e? Rectifier r P D -9.1125A IRGBC20KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features â , applications requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings Parameter , -4 or G-10 Material) For recommended footprint and soldering techniques refer to application note , Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 2 - SMD-220 Section D - page D
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c918 C918 diode C913 C-918 4A55452 BC20KD2-S C-919 4ASS452 C-920

c372 transistor

Abstract: transistor C369 International lü Rectifier PD -9.1141 IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features â'¢ â'¢ â'¢ â'¢ Short , . SMD-220 Absolute Maximum Ratings Parameter Max. Units 600 V V ces , ) ' When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering , - Pulsed Collector Current Test Circuit Package Outline 2 - SMD-220 Section D - page D-12 C
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c372 transistor transistor C369 transistor C372 C-369 C-370 IRGR020MD2-S 554S2 00201L1 C-371

C-865

Abstract: smd C865 Previous Datasheet Index Next Data Sheet PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C · Short circuit rated - 10µs @ 125 , capability. SMD-220 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM , mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer , . 14b - Switching Loss Waveform Package Outline 2 - SMD-220 100 Section D - page D-12 C
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C-865 smd C865 C865 C863 C-866

c337 transistor

Abstract: c338 transistor PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C · Short circuit rated - 10µs @ 125°C, V GE = 15V · Switching-loss rating includes all , other applications requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings , Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended , Waveform Package Outline 2 - SMD-220 100 Section D - page D-12 C-340 1000 International
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c337 transistor c338 transistor transistor c337 C337 w 79 C336 SMD C339 C-339
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