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FZT651TA Diodes Incorporated Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, visit Digikey Buy
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FZT651QTA Diodes Incorporated Power Bipolar Transistor, 3A I(C), NPN visit Digikey Buy

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fzt651 Datasheet

Part Manufacturer Description PDF Type
FZT651 Diodes 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Original
FZT651 Kexin NPN Silicon Planar High Performance Transistors Original
FZT651 TY Semiconductor NPN Silicon Planar High Performance Transistors - SOT-223 Original
FZT651 Zetex Semiconductors SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Original
FZT651 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan
FZT651TA Diodes Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN HP 60V 3000MA SOT-223 Original
FZT651TA Zetex Semiconductors SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS Original
FZT651TC Diodes Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN MED PWR SOT223 Original

fzt651

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ) Product FZT651TA FZT651QTA FZT651TC FZT651QTC Notes: Compliance AEC-Q101 Automotive AEC-Q101 Automotive Marking FZT651 FZT651 FZT651 FZT651 Reel size (inches) 7 7 13 13 Tape width (mm) 12 12 12 , A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH , Marking Information FZT 651 FZT651 = Product Type Marking Code FZT651 Document Number DS33149 , Diodes Incorporated FZT651 Maximum Ratings (@TA = +25°C, unless otherwise specified Diodes
Original
FZT751 J-STD-020 MIL-STD-202 2002/95/EC 2011/65/EU
Abstract: FZT651TA FZT651TC Notes: Compliance AEC-Q101 AEC-Q101 Marking FZT651 FZT651 Reel size , A Product Line of Diodes Incorporated   Green FZT651 60V NPN HIGH PERFORMANCE , /packages.html Marking Information FZT651 = Product Type Marking Code FZT651 Document Number DS33149 , Diodes Incorporated FZT651 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified , and JESD22-A115. FZT651 Document Number DS33149 Rev. 5 - 2 2 of 7 www.diodes.com February Diodes
Original

FZT651

Abstract: transistor fzt651 View Pin-Out Ordering Information (Notes 3 & 4) Product FZT651TA FZT651QTA FZT651TC FZT651QTC Notes: Grade Commercial Automotive Commercial Automotive Marking FZT651 FZT651 FZT651 FZT651 , A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH , Information FZT 651 FZT651 = Product type Marking Code FZT651 Document Number DS33149 Rev. 3 - 2 , FZT651 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage
Diodes
Original
transistor fzt651 FZT marking code

DSA003712

Abstract: equivalent FZT651 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C 0.5 225 0.3 C 175 VCE=2V B PARTMARKING DETAIL FZT651 125 , SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 FEBRUARY 1995 FEATURES * 60 , 0.5 225 0.3 C 175 VCE=2V B PARTMARKING DETAIL FZT651 125 ABSOLUTE MAXIMUM
Zetex Semiconductors
Original
DSA003712 equivalent FZT651 IC/10 100MH
Abstract: Transistors SMD Type Product specification FZT651 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 60 Volt VCEO. +0.1 3.00-0.1 3 Amp continuous current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 Low saturation voltage , sales@twtysemi.com 4008-318-123 1 of 2 Transistors SMD Type Product specification FZT651 , IC=500mA,VCC=10V,IB1=IB2=50mA toff 300 ns 0.02. Marking Marking FZT651 http TY Semiconductor
Original

fzt651

Abstract: smd FZT651 Transistors SMD Type NPN Silicon Planar High Performance Transistors FZT651 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 60 Volt VCEO. +0.1 3.00-0.1 3 Amp continuous current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 Low , www.kexin.com.cn 1 Transistors SMD Type FZT651 Electrical Characteristics Ta = 25 Parameter Symbol , 2 FZT651 www.kexin.com.cn IC=500mA, VCE =2V* 100 200 80 170 IC=2A, VCE =2V
Kexin
Original
smd FZT651
Abstract: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 ISSUE 2 Â FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage 0.6 C 0.5 225 0.4 E COMPLEMENTARY TYPE Â FZT751 IC/IB=10 C 175 0.3 VCE=2V 0.2 0.1 B PARTMARKING DETAIL Â FZT651 125 ABSOLUTE MAXIMUM RATINGS. 75 0.01 0.1 1 0.01 C 0.1 , is available upon request for this device 3 - 207 FZT651 TYPICAL CHARACTERISTICS 0.6 0.5 -
Original
Abstract: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS ISSU E 2 - FEBRUARY 1995_ FZT651 FEATURES * * * 60 Volt V CE0 3 A m p c o n tin u o u s current L o w Saturation v olta ge C O M P L E M E N T A R Y T Y P E - FZT751 P A R T M A R K IN G D E T A IL - FZT651 ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak , upon request for this device 3-207 FZT651 TYPICAL CHARACTERISTICS le - Collector Current -
OCR Scan

FZT751

Abstract: FZT651 SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT751 ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 td IB1 =IB2=IC/10 tr tf V 0.2 600 100 500 80 400 60 0 0.0001 0.001 0.01 0.1 1 COMPLEMENTARY TYPE 300 ts FZT651 C B td PARTMARKING , FZT651 C B td PARTMARKING DETAIL tf 40 tr FZT751 ABSOLUTE MAXIMUM RATINGS
Zetex Semiconductors
Original
DSA003715

MARKING KN2

Abstract: transistor fzt651 NOT RECOMMENDED FOR NEW DESIGN USE FZT651 DZT651 LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features NEW PRODUCT · · · · · · Epitaxial Planar Die Construction Complementary PNP Type Available , FZT651 Electrical Characteristics Characteristic Off Characteristics (Note 5) @TA = 25°C unless , of 4 www.diodes.com DZT651 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE FZT651 , NOT RECOMMENDED FOR NEW DESIGN USE FZT651 Ordering Information (Note 6) Device DZT651-13 Packaging
Diodes
Original
MARKING KN2 DZT751 J-STD-020C DS30809
Abstract: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS ISSUE 2 - FEBRUARY 1995_ FEATURES * * * 60 Volt VCEQ 3 A m p continuous current Low saturation voltage FZT651 COM PLEM ENTARY TYPE - FZT751 PARTMARKING DETAIL - FZT651 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Taml5=250C O perating and Storage Tem perature Range SYMBOL VCBO VC EO VEBO !cm 'c -
OCR Scan

FZT751

Abstract: FZT757 /100 140 FZT753 25/- 2000/2 0.5 2000/200 140 FZT651 80 60 3.0 6.0 2.0 80/- 1000/2 0.3 1000/100 , FZT651 40/- -2000/-2 -0.6 -3000/-300 FZT749 -5 -25 -3.0 -8.0 2.0 100/300 -1000/-2 -0.3 -1000
-
OCR Scan
FZT657 FZT757 FZT655 FZT755 FZT605 FZT705 FZT653
Abstract: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 IS S U E 2 - F E B R U A R Y 1995 FEATURES * * 60 Volt V CE0 3 A m p continuous current * Low saturation voltage C O M P L E M E N T A R Y TY PE - FZT751 P A R T M A R K IN G D E T A IL - FZT651 ABSOLUTE M AXIMUM RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage VALUE UNIT VcbO Collector-Base Voltage 80 V V CEO 60 V Emitter-Base Voltage V ebo 5 V Peak Pulse Current -
OCR Scan
100HA HR7057A

FZT858

Abstract: fzt957 -Emitter Type NPN FZT653 FZT651 FZT649 PNP FZT753 FZT751 FZT749 -120 -80 -35 -100 -60 -25 -2.0 -3.0 -3.0 2.0 2.0 , -0.6 -0.3 -0.6 -1000/-100 -2000/-200 -1000/-100 -3000/-300 -1000/-100 -3000/-300 100 FZT649 100 FZT651
-
OCR Scan
FZT858 fzt957 FZT857 FZT855 FZT853 FZT851 FZT869 FZT849
Abstract: FZT651QTA FZT651QTC Notes: Compliance Automotive Automotive Marking FZT651 FZT651 Reel size , FZT651 = Product Type Marking Code FZT651Q Document Number DS36917 Rev. 1 - 2 1 of 7 www.diodes.com February 2014 © Diodes Incorporated A Product Line of Diodes Incorporated FZT651Q , A Product Line of Diodes Incorporated   Green FZT651Q 60V NPN HIGH PERFORMANCE , collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT651Q Document Number Diodes
Original
FZT751Q

FZT751

Abstract: SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IS S U E 2 - F E B R U A R Y 1995 FEATURES * 60 Volt VCE0 * * 3 A m p continuous current Low saturation voltage FZT651 FZT751 A. C O M P L E M E N T A R Y TY PE P A R T M A R K IN G D ETA IL B FZT751 ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tarntj=25°C Operating and Storage Temperature Range SY M B
-
OCR Scan
Abstract: FZT651 Transistors Si NPN Power HF BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)2 f(T) Min. (Hz) Transition Freq140M @I(C) (A) (Test Condition)100m @V(CE) (V) (Test Condition)5 V(CE)sat Max. (V)300m @I(C) (A) (Test Condition)1 @I(B) (A) (Test American Microsemiconductor
Original

ZTX851

Abstract: ZTX853 FZT651 ZTX651 FCX491 FZT491 ZTX451 FMMT451 FMMT491 FMMT493A ZUMT491 FZT692B ZTX692B FZT1053A ZTX1053A
Zetex Semiconductors
Original
ZTX851 ZTX853 FCX1053A FMMT620 ZTX653 FZT493

F250C

Abstract: SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FEATURES * * * 60 Volt V CE0 3 A m p continuous current Low saturation voltage FZT651 FZT751 C O M P L E M E N T A R Y TYPE P A R T M A R K IN G DETA IL - B FZT751 ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tam [f=250C Operating and Storage Temperature Range TYP. ; SY M BO L V CBO V CEO VALUE -80 -60 -5
-
OCR Scan
F250C
Abstract: SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 2 - FEBRUARY 1995 FEATURES * 60 Volt VCE0 * 3 A m p continuous current * Low saturation voltage e C O M PLEM ENTARY T Y P E - FZT651 c B PARTMARKING D E T A IL - FZT751 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT VCB0 -80 V Collector-Emitter Voltage V ceo -60 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current 'c m -6 A Continuous Collector -
OCR Scan
GQCH401
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