NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ; Gs = 1 mS; Bs = Bs opt f = 200 MHz; Gs = 2 mS; Bs = Bs opt Transducer gain (note 1 ) f = 100 MHz; Gs = 1 mS; Bs = Bs opt; Gl = 0,5 mS; B|_ = B|_ opt f = 200 MHz; vis = 2 mS; Bs = Bs opt; G|_ = 0,5 mS , transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET , Tamb = 60 °C ptot max. 200 mW Junction temperature Ti max. 150 °C Transfer admittance at f = 1 kHz lD = 10 mA; VDS = 10 V; + VG2.s = 4V lYfsl typ. 14 mS Input capacitance at gate 1; f = 1 MHz ID = 10 ... | OCR Scan |
3 pages, |
FET MARKING CODE BF991 free transistor bs 200 BF991 abstract |
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| Abstract: ; VDs = 10 V; + VG2-S = 4 V; f = 800 MHz F typ. 2,8 dB , (AV) max. 30 mA üg1-s max. 10 mA ± 'g2-s max. 10 mA ptot max. 200 mW Tstg -65to + 150 oc Ti max. , capacitance at f = 1 MHz Noise figure at Gs = 2 mS; Bs = Bs opt; f = 200 MHz at Gg = 2 mS ; Bs = Bs opt; f = , DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with , °C ptot max. 200 mW Junction temperature Ti max. 150 «G Transfer admittance at f = 1 kHz ID = ... | OCR Scan |
3 pages, |
BF996 0D13D14 0D13D14 abstract |
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| Abstract: lD = 10 mA; VDS= 15 V; + Vq2-S = 4 V; f = 200 MHz F typ. 1.8 dB MECHANICAL DATA Dimensions in mm , dissipation up to Tamb = 60 °C (note 1 ) ptot max. 200 mW Storage temperature range Tstg -65 to + 150 °C , capacitance at f = 1 MHz C0s typ. 0.8 PF Noise figure f = 200 MHz; Gs = 2 mS; Bs = Bs opt n typ- 1.0 dB f = 800 MHz; Gs = 3.3 mS; Bs = Bs opt r typ- 1.8 dB Power gain f = 200 MHz; GS = 2 mS; BS = Bs opt , MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source ... | OCR Scan |
3 pages, |
marking ANs BF996S BM75Q BM75Q abstract |
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| Abstract: 200 mW Junction temperature Tj max. 150 oc Transfer admittance at f = 1 kHz lD = 10mA;VDS= 15 V; + , max. 200 mW Tstg -65 to + 150 °C Ti max. 150 OC Rth j-a = 460 K/W 200 ^tot max ImW) S ,UU , typ. 0.8 PF Noise figure f = 200 MHz; Gs = 2 mS; Bs = Bs opt f = 800 MHz; Gs = 3.3 mS; Bs = Bs opt F typ. typ. 1.0 1.8 dB dB Power gain f = 200 MHz; Gs = 2 mS; Bs = Bs opt; Gl = 0.5 mS; B|_= B|_ opt f = , field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected ... | OCR Scan |
3 pages, |
marking ANs BF996S BF996S abstract |
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| Abstract: source admittance ID = 10 mA; Vds = 10 V; + Vq2-S = 4 V; f = 200 MHz F typ. 0,7 dB Vds max' 20 v ID , Total power dissipation up to Tamb = 60 °C (note 1 ) ptot max. 200 mW Storage temperature Tstg -65 to + , 1 MHz Noise figure f = 100 MHz; Gs = 1 mS; Bs = Bs opt f = 200 MHz; Gs = 2 mS; Bs = Bs opt , MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source , ; VDS = 10 V; + VG2-S = 4 v Input capacitance at gate 1; f = 1 MHz ID = 10 mA; VDS = 10 V; + VG2-S = 4 ... | OCR Scan |
3 pages, |
BF991 BF991 abstract |
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| Abstract: ) ptot max. 200 mW Storage temperature Tstg -65 to + 150 OC Junction temperature Ti max. 150 OC thermal resistance From junction to ambient in free air (note 1 ) Rth j-a 460 K/W 7288768 200 , figure at Gs = 2 mS; Bs = Bs opt; f = 200 MHz F typ. 1.0 dB Power gain at Gs = 2 mS; Bs = Bs opt Gl = , field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected , 200 mW Junction temperature TJ max. 150 °C Transfer admittance at f = 1 kHz lD = 10 mA; VDg = 15 V ... | OCR Scan |
3 pages, |
sot143 code marking MS mosfet marking code gg Marking G2 BF994S BF994S abstract |
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| Abstract: mA; Vqs = 15 V; + Vq2-S = 4 V; f = 200 MHz typ. 1.0 dB MECHANICAL DATA Fig.1 SOT143. Pinning 1 , figure at Gs = 2 mS; Bg = Bs opt; f = 200 MHz F typ. 1.0 dB Power gain at Gs = 2 mS; Bs = Bs opt Gl , MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source , to Tam^ = 60 °C ptot max. 200 mW Junction temperature Ti max. 150 °C Transfer admittance at f = 1 kHz lD = 10 mA; VQS = 15 V; + VG2-S = 4 v IVfsl typ. 18 mS Input capacitance at gate 1 ; f = 1 MHz ... | OCR Scan |
3 pages, |
BF994S BF994S abstract |
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| Abstract: Bg opt f = 200 MHz; Gs = 2 mS; Bs = Bs opt Transducer gain (note 1 ) f = 100 MHz; Gg = 1 mS; Bs=Bsopt; G|_ = 0,5 mS; B[_ = B|_ opt f = 200 MHz; Gg = 2 mS; Bs = Bs opt; G|_ = 0,5 mS; B[_ = B[_ opt ± , field-effect transistor in a plastic SOT143R microminiature envelope with source and substrate interconnected , ; + VG2-S = 4V Input capacitance at gate 1; f = 1 MHz ID = 10 mA; VDs = 10 V; 3 VG2_s = 4 V Feedback capacitance at f = 1 MHz lD= 10 mA; VDs= 10 V; + VG2-S = 4 v Noise figure at optimum source admittance lD = ... | OCR Scan |
5 pages, |
BF990AR mosfet marking code gg BF991 BF990 BF990AR abstract |
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| Abstract: 10 mA; VDS = 15 V; + VG2-S = 4 V; f = 200 MHz F typ- 1.5 dB MECHANICAL DATA Fig. 1 SOT-143. 0,150 , figure at f = 200 MHz; Gs = 2 mS; Bs = = Bs opt F typ. < 1,5 dB 2,8 dB Power gain at Gg = 2 mS; Bg = Bs , MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and , Tamb = 60 °C ptot max. 200 mW Junction temperature Ti max. 150 oc Transfer admittance at f = 1 kHz lD = 10 mA; VDS = 15 V; + VG2-S = 4 V lYfsl typ. 17 mS Feedback capacitance at f = 1 MHz ID = ... | OCR Scan |
3 pages, |
FET MARKING CODE BF994 BF994 abstract |
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| Abstract: 25 fF Output capacitance at f = 1 MHz Cos typ. 0.8 pF Noise figure f = 200 M Hz; Gs = 2 mS; Bs = Bs opt f = 800 MHz; Gs = 3.3 mS; Bs = Bs opt F F typ. typ. 1.0 dB 1.8 dB Power gain f = 200 MHz; Gs , BF966S BF966S J\_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a , ; VDS = 15 V; + Vq2-S = 4 v lYfsl typ. 18 mS I nput capacitance at gate 1 ; f = 1 MHz typ. max. 2.3 2.6 pF PF lD= 10 mA; VDs= 15 V; + VG2.s = 4 V cig1-s Feedback capacitance at f = 1 MHz lD= ... | OCR Scan |
5 pages, |
BF966S BF966S abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| BC847BS - NPN general purpose double transistor BC847BT BC847BT BC847BT BC847BT - NPN general purpose transistors general purpose transistors BC857BF BC857BF BC857BF BC857BF - PNP general purpose transistors BC857BS - PNP general purpose transistor 2PA1576R 2PA1576R 2PA1576R 2PA1576R - PNP general purpose transistor 2PA1576S 2PA1576S 2PA1576S 2PA1576S - PNP general purpose transistor 2PA1774Q 2PA1774Q 2PA1774Q 2PA1774Q - PNP general purpose transistor 2PA1774QJ 2PA1774QJ 2PA1774QJ 2PA1774QJ - PNP general purpose transistor 2PA1774R 2PA1774R 2PA1774R 2PA1774R - PNP general purpose transistor www.datasheetarchive.com/files/philips/catalog/listing/284.html |
Philips | 17/02/2002 | 244.79 Kb | HTML | 284.html |
| FE min 200 Category Single low power transistors BC547C BC547C BC547C BC547C hFE min 420 PNP COMPL (mA) 100 Category Single low power transistors BS108 Configuration Single N (mV/V) 200 Slew rate(V/ms) 600.0 Frequency compensation External Category RF amplifiers NE5539N NE5539N NE5539N NE5539N CMRR(dB) 80 PSRR(mV/V) 200 Output swing(V) -2.2 to 2.7 GBW product(MHz) 1200 Open /C1 Category Hands-Free Number of Pins 24 Function Circuits TEA1095TS/C1 TEA1095TS/C1 TEA1095TS/C1 TEA1095TS/C1 www.datasheetarchive.com/files/philips/catalog/parametrics/12-v1.html |
Philips | 21/01/2002 | 84.26 Kb | HTML | 12-v1.html |
| = 1 MHz âˆ' 25 âˆ' fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt âˆ' 0.6 âˆ' dB f = 800 MHz; GS = 3.3 m FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low field effect transistor in a plastic microminiature SOT143 or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back ID drain current âˆ' 30 mA Ptot total power dissipation âˆ' 200 mW yfs forward transfer admittance 24 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BF998_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| (SOIC) Shrink Small Outline Plastic Packages (SSOP) Small Outline Transistor Plastic Package -In-Line Plastic Packages (SPDIP) E42.6B-S 42 Lead Shrink Dual-In-line Plastic Package M16.2-S 16 Lead Small Outline Plastic Package (200 Mil) M16.3 (JEDEC Small Outline Plastic Package M24.2-S 24 Lead Small Outline Plastic Package (200 Transistor Plastic Package P6.064 6 Lead Small Outline Transistor Plastic Package www.datasheetarchive.com/files/harris/families/plastic.htm |
Harris | 15/08/1997 | 22.84 Kb | HTM | plastic.htm |
| Silicon Epitaxial Planar Diodes bav200_3 BAV200.BAV203 BAV203 BAV203 BAV203 Silicon Epitaxial Planar Diodes bav300_3 BAV300 BAV300 BAV300 BAV300 Mode bf550 BF550/BF550R BF550/BF550R BF550/BF550R BF550/BF550R Silicon PNP RF Transistor bf569 BF569/BF569R BF569/BF569R BF569/BF569R BF569/BF569R Silicon PNP RF Transistor bf579 BF579/BF579R BF579/BF579R BF579/BF579R BF579/BF579R Silicon PNP RF Transistor cd_fax BF775 BF775 BF775 BF775 Silicon PNP RF Transistor bf961 BF961 BF961 BF961 BF961 N BF970 BF970 BF970 BF970 Silicon PNP RF Transistor bf979 BF979 BF979 BF979 BF979 Silicon PNP RF Transistor bf988 BF988 BF988 BF988 BF988 N-Channel Dual -Fieldeffect Tetrode, Depletion Mode cd_fax BFP181T BFP181T BFP181T BFP181T Silicon NPN Planar RF Transistor cd_fax BFP182T BFP182T BFP182T BFP182T Silicon NPN www.datasheetarchive.com/files/temic/database/text/allparts.txt |
Temic | 12/03/1997 | 67.32 Kb | TXT | allparts.txt |
| capacitance f = 1 MHz âˆ' 15 30 fF F noise figure f = 11 MHz; GS = 20 mS; BS = 0 âˆ' 3.5 âˆ' dB f = 400 MHz; YS = YS (opt) âˆ' 0.9 1.6 dB f = 800 MHz; YS = YS (opt) âˆ' 1.3 2 dB Gtr power gain f = 200 MHz; GS = 2 mS; BS = BS . DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected -gate MOS-FETs BF1211 BF1211 BF1211 BF1211; BF1211R BF1211R BF1211R BF1211R; BF1211WR BF1211WR BF1211WR BF1211WR FEATURES • Short channel transistor with high forward transfer -channel dual-gate MOS-FETs BF1211 BF1211 BF1211 BF1211; BF1211R BF1211R BF1211R BF1211R; BF1211WR BF1211WR BF1211WR BF1211WR handbook, halfpage 0 50 100 200 250 0 200 150 150 100 50 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BF1211_R_WR_1.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| capacitance f = 1 MHz âˆ' 15 30 fF F noise figure f = 11 MHz; GS = 20 mS; BS = 0 âˆ' 3.5 âˆ' dB f = 400 MHz; YS = YS (opt) âˆ' 0.9 1.6 dB f = 800 MHz; YS = YS (opt) âˆ' 1.3 2 dB Gtr power gain f = 200 MHz; GS = 2 mS; BS = BS . DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected -gate MOS-FETs BF1211 BF1211 BF1211 BF1211; BF1211R BF1211R BF1211R BF1211R; BF1211WR BF1211WR BF1211WR BF1211WR FEATURES • Short channel transistor with high forward transfer -channel dual-gate MOS-FETs BF1211 BF1211 BF1211 BF1211; BF1211R BF1211R BF1211R BF1211R; BF1211WR BF1211WR BF1211WR BF1211WR handbook, halfpage 0 50 100 200 250 0 200 150 150 100 50 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BF1211_R_WR_1.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| capacitance f = 1 MHz âˆ' 15 30 fF F noise figure f = 11 MHz; GS = 20 mS; BS = 0 âˆ' 3.5 âˆ' dB f = 400 MHz; YS = YS (opt) âˆ' 0.9 1.6 dB f = 800 MHz; YS = YS (opt) âˆ' 1.3 2 dB Gtr power gain f = 200 MHz; GS = 2 mS; BS = BS . DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected -gate MOS-FETs BF1211 BF1211 BF1211 BF1211; BF1211R BF1211R BF1211R BF1211R; BF1211WR BF1211WR BF1211WR BF1211WR FEATURES • Short channel transistor with high forward transfer -channel dual-gate MOS-FETs BF1211 BF1211 BF1211 BF1211; BF1211R BF1211R BF1211R BF1211R; BF1211WR BF1211WR BF1211WR BF1211WR handbook, halfpage 0 50 100 200 250 0 200 150 150 100 50 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BF1211_R_WR_1.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| MHz; GS = 20 mS; BS = 0 âˆ' 4 âˆ' dB f = 400 MHz; YS = YS (opt) âˆ' 0.9 1.6 dB f = 800 MHz; YS = YS (opt) âˆ' 1.1 1.8 dB Gtr power gain f = 200 MHz; GS = 2 mS; BS = BS (opt); GL = 0.5 mS; BL = BL (opt) âˆ' 35 âˆ' d -FETs BF1212 BF1212 BF1212 BF1212; BF1212R BF1212R BF1212R BF1212R; BF1212WR BF1212WR BF1212WR BF1212WR FEATURES • Short channel transistor with high forward transfer admittance -effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect ; BF1212WR BF1212WR BF1212WR BF1212WR handbook, halfpage 0 50 100 200 250 0 200 150 150 100 50 MDB828 MDB828 MDB828 MDB828 (2) (1) Ptot (mW) Ts ( C www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BF1212_R_WR_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| MHz; GS = 20 mS; BS = 0 âˆ' 4 âˆ' dB f = 400 MHz; YS = YS (opt) âˆ' 0.9 1.6 dB f = 800 MHz; YS = YS (opt) âˆ' 1.1 1.8 dB Gtr power gain f = 200 MHz; GS = 2 mS; BS = BS (opt); GL = 0.5 mS; BL = BL (opt) âˆ' 35 âˆ' d -FETs BF1212 BF1212 BF1212 BF1212; BF1212R BF1212R BF1212R BF1212R; BF1212WR BF1212WR BF1212WR BF1212WR FEATURES • Short channel transistor with high forward transfer admittance -effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect ; BF1212WR BF1212WR BF1212WR BF1212WR handbook, halfpage 0 50 100 200 250 0 200 150 150 100 50 MDB828 MDB828 MDB828 MDB828 (2) (1) Ptot (mW) Ts ( C www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BF1212_R_WR_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |