NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: = 25 V V R =75 V V R = 25 V; T j = 150 °C V R = 75 V; T j = 150 °C; Cd t rr V fr diode , LESHAN RADIO COMPANY, LTD. High-speed diode BAS516 BAS516 FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak , switching in e.g. surface mounted circuits. DESCRIPTION The BAS516 BAS516 is a high-speed switching diode , R( V ) Fig.5 Diode capacitance as a function of reverse voltage; typical values. S292/2 ... | Original |
3 pages, |
SC79 BAS516 fr diode BAS516 abstract |
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| Abstract: Hermetic Packages Die Technology: IGBT MOSFET Bipolar SCR HVIGBT FR Diode , MODULES IPMs DIP-IPMs ACCESSORIES DISCRETE THYRISTORS DISCRETE RECTIFIERS THYRISTOR AND DIODE MODULES FAST RECOVERY AND THREE-PHASE DIODE MODULES ASSEMBLIES IGBT ASSEMBLIES CUSTOM MODULES , : Discrete Studs Discrete Discs VOLTAGE: 200V TO 6000V CURRENT: 100A TO 2000A THYRISTOR AND DIODE , Call the Power Line at 1-800-451-1415 FAST RECOVERY & THREE-PHASE DIODE MODULES Fast Recovery ... | Original |
8 pages, |
SCR Gate Drive 200v dc motor welding machine circuit igbt for HIGH POWER induction heating scr control circuit for welding dc to dc chopper by thyristor igbt for induction heating igbt circuit for induction melting Converter for Induction Heating SCR Inverter welding inverter circuit induction heating datasheet abstract |
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| Abstract: Diode FR Diode GTO HVIGBT IGBT MOSFET SCR SiC Diode VOLTAGE: 30V TO 4500V CURRENT: 50A TO 1500A , DISCRETE THYRISTORS G DISCRETE RECTIFIERS G THYRISTOR AND DIODE MODULES G TM DIPIPM is a registered trademark of Mitsubiishi Electric Corp. FAST RECOVERY AND THREE-PHASE DIODE MODULES , Thyristor & Diode Modules POW-R-BLOKTM / POW-R-BRIKTM POW-R-BLOKTM Applications Include: G G G G , POWEREX 2009:Layout 1 12/31/08 9:19 AM Page 7 Fast Recovery & Three-Phase Diode Modules ... | Original |
8 pages, |
INDUCTION HEATING POWER SUPPLY High Frequency Induction Heating GTO thyristor 1200V 50A welding inverter Electric Welding Machine thyristor SWITCHING WELDING BY MOSFET 40A GTO thyristor 3 phase inverters ac induction motor 200v dc motor igbt scr control circuit for welding igbt circuit for induction melting datasheet abstract |
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| Abstract: BRIDGE DIODE F.R. DIODE CHIP IC SHUNT REGULATOR PHOTOCOUPLER PHOTOCOUPLER FUSE BALUN COIL CHOKE , PC2 F1 L1 L2 C3 C8 C25 C26 C29 C30 C31 C32 Parts Name MOSFET BRIDGE DIODE F.R. DIODE ... | Original |
17 pages, |
TSA-101S-W CAP ELECT FA13842N INS-400L photocoupler 817c RS405M STF6NK60ZFP STPS20L45CFP RK 926 315 jc 817 FA13842 IC CHIP 817C 264-7GVD/S530-E2 FA13842N-D1-TE1 PA581-57-01 PA581-57-01 abstract |
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| Abstract: diode 10 4 D2, D3, D6, D7 1N4005 1N4005, 600V, 1A GP diode 11 1 D4 1N4937 1N4937, 600V, 1A, FR diode 12 1 D5 BZX79C5 BZX79C5.6V, 5.6V Zener diode 13 1 D8 1N4001 1N4001, 100V, 1A, GP Diode ... | Original |
19 pages, |
11DQ06 1N4005 BZX79C56V EE13 ee13 ferrite transformer EN550022 high power FERRITE TRANSFORMER LTV817A TNY264 TNY264P 24W zener diode TOPSWITCH battery charger TNY264P abstract |
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| Abstract: ON Semiconductor (SMD) 1 D1 MUR110 MUR110, 100 V, FR Diode SMA/SMB ON Semiconductor 1 , via diode D4 and resistor R11. Voltage spikes caused by the leakage inductance of T1 are clamped by , 1N4148B 1N4148B Diode SOD-123 ON Semiconductor (SMD) 1 D4 2N5550 2N5550, 100 V, NPN Transistor SOT-23 ... | Original |
6 pages, |
2N5550 AND8127 EF16 EF16 smd TRANSFORMER bobbin 1N5239B SMD NCP1030 NCP1031 NTD12N10 SFH6156A-4 smd 123 smd zener sod 80 diode 5v SOD123 ON Semiconductor TL431 1N4148B AND8247/D NCP1031 AND8247/D abstract |
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| Abstract: , FR Diode SMB ON YES D5 1 MBRS340 MBRS340 1 A, 40 V Schottky SMC ON YES D3 1 , winding on transformer T1 (pins 2, 3) provides the operating bias via diode D4 and resistor R11. Voltage , ON YES D4 1 MMSD4148B MMSD4148B Diode SOD-123 ON YES Q2 1 MMBT5550LT MMBT5550LT, 100 V, NPN ... | Original |
8 pages, |
1n4148 0805 AND8119 1N4148 core EF16 E16 bobbin E16/8/5 9 pin zener diode 9,1v 0.5 w smb capacitor 472 flyback operate in both ccm and dcm 1N4148 SOD-123 "Flyback transformer design" TL431 current limit EF16 TRANSFORMER AND8247/D NCP1031 AND8247/D abstract |
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| Abstract: FR 2A.FR 2M Surface mount diode Fast silicon rectifier diodes FR 2A.FR 2M Forward Current: 2 A Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Values Units Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) 3) 4) 1 Dimensions in mm 25-03-2004 SCT © by SEMIKRON FR 2A.FR 2M Fig. 1 Forward characteristic ( typical values ) 2 Fig. 2 Rated forward current vs. temp. of the terminals 4 ... | Original |
2 pages, |
datasheet abstract |
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| Abstract: FR 3SMB A . FR 3SMB M Surface mount diode Fast silicon rectifier diodes FR 3SMB A . FR 3SMB M Forward Current: 3 A Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Values Units Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) 3) 4) 1 Dimensions in mm 07-03-2007 MAM © by SEMIKRON FR 3SMB A . FR 3SMB M Fig. 1 Forward characteristics (typical values) 2 Fig. 2 Rated forward current vs. ... | Original |
2 pages, |
FR 014 datasheet abstract |
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| Abstract: FR 5A . FR 5M Surface mount diode Fast silicon rectifier diodes FR 5A . FR 5M Forward Current: 5 A Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Values Units Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) 3) 4) 1 Dimensions in mm 08-03-2007 MAM © by SEMIKRON FR 5A . FR 5M Fig. 1 Forward characteristics (typical values) 2 Fig. 2 Rated forward current vs. temp. of the terminals4) 08-03-2007 ... | Original |
2 pages, |
diode 5m 5m diode datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Bipolar SCR HVIGBT FR Diode Diode GTO www.datasheetarchive.com/files/powerex/pages/product/military.html |
Powerex | 02/07/2003 | 6.22 Kb | HTML | military.html |
| International Rectifier - Datasheet Listing - Standard Recovery Diodes International Rectifier, Power Semiconductor, Datasheets, standard recovery diode avalanche diode thyristor inverter International Rectifier - Datasheet Listing - Standard Recovery Diodes Standard Recovery Diodes 1N1183 1N1183 1N1183 1N1183 - 1N1190 1N1190 1N1190 1N1190 Series 1N1183A 1N1183A 1N1183A 1N1183A - 1N1190A 1N1190A 1N1190A 1N1190A Series 1N1199A 1N1199A 1N1199A 1N1199A - 1N3768 1N3768 1N3768 1N3768 Series 1N4044 1N4044 1N4044 1N4044 - 1N4056 1N4056 1N4056 1N4056 Series 1N5162 1N5162 1N5162 1N5162 6F(R) Series 8AF. Series 8EWS www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd000d7.htm |
International Rectifier | 06/10/1998 | 8.83 Kb | HTM | wcd000d7.htm |
| dt t fr is the time during which the voltage accross the diode increases from OV to V FP ST | TV AND MONITORS - CHOICE OF DIODES Application Note TV AND MONITORS - CHOICE OF DIODES AN600 AN600 AN600 AN600 damper diode, and to suggest criteria for choosing between the DTV32-1500A DTV32-1500A DTV32-1500A DTV32-1500A and DTV32-1500B DTV32-1500B DTV32-1500B DTV32-1500B for a the diode is equal to the V CEsat of the transistor. The damper diode is blocked. At t = t1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3603-v3.htm |
STMicroelectronics | 25/05/2000 | 9.34 Kb | HTM | 3603-v3.htm |
| the diode increases from OV to V FP and then decreases from V FP to V FR = 2V Example : With ST | TV AND MONITORS - CHOICE OF DIODES Application Note TV AND MONITORS - CHOICE OF DIODES AN600 AN600 AN600 AN600 Document Format Size analysis of the different losses in the damper diode, and to suggest criteria for choosing between the voltage V T across the diode is equal to the V CEsat of the transistor. The damper diode is blocked www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3603.htm |
STMicroelectronics | 20/10/2000 | 9.83 Kb | HTM | 3603.htm |
| formula : P ON = 1 T : 0 t fr V F . I F dt t fr is the time during which the voltage accross the diode ST | TV AND MONITORS - CHOICE OF DIODES AN600 AN600 AN600 AN600 TV AND MONITORS - CHOICE OF DIODES do an analysis of the different losses in the damper diode, and to suggest criteria for choosing diode is equal to the V CEsat of the transistor. The damper diode is blocked. At t = t1 the transistor to -Ip and an overvoltage (V FP ) appears across the diode. At t = t 2 the voltage V T across the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3603-v1.htm |
STMicroelectronics | 02/04/1999 | 7.55 Kb | HTM | 3603-v1.htm |
| formula : P ON = 1 T : 0 t fr V F . I F dt t fr is the time during which the voltage accross the diode ST | TV AND MONITORS - CHOICE OF DIODES AN600 AN600 AN600 AN600 TV AND MONITORS - CHOICE OF DIODES do an analysis of the different losses in the damper diode, and to suggest criteria for choosing diode is equal to the V CEsat of the transistor. The damper diode is blocked. At t = t1 the transistor to -Ip and an overvoltage (V FP ) appears across the diode. At t = t 2 the voltage V T across the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3603-v2.htm |
STMicroelectronics | 14/06/1999 | 7.52 Kb | HTM | 3603-v2.htm |
| ST | NEW HIGH VOLTAGE ULTRA-FAST DIODES Application Note NEW HIGH VOLTAGE ULTRA-FAST DIODES AN601 AN601 AN601 AN601 Document Format Size diodes used for freewheel, snubber, and rectifier functions become one of the main causes of the power losses. In the range of 600V-1200V, SGS THOMSON has developed a new family of ultrafast diodes. Taking series offer to the designer a double choice, allowing him to use the best diode in this application www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3604.htm |
STMicroelectronics | 20/10/2000 | 12.28 Kb | HTM | 3604.htm |
| ST | NEW HIGH VOLTAGE ULTRA-FAST DIODES Application Note NEW HIGH VOLTAGE ULTRA-FAST DIODES AN601 AN601 AN601 AN601 transistor and the operating frequencies are higher and higher. Fast diodes used for freewheel, snubber -1200V -1200V -1200V -1200V, SGS THOMSON has developed a new family of ultrafast diodes. Taking into account these new designer a double choice, allowing him to use the best diode in this application. I. INTRODUCTION The www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3604-v3.htm |
STMicroelectronics | 25/05/2000 | 11.71 Kb | HTM | 3604-v3.htm |
| ST | NEW HIGH VOLTAGE ULTRA-FAST DIODES AN601 AN601 AN601 AN601 NEW HIGH VOLTAGE ULTRA-FAST DIODES higher and higher. Fast diodes used for freewheel, snubber, and rectifier functions become one of the ultrafast diodes. Taking into account these new constraints which are different from one application to these two series offer to the designer a double choice, allowing him to use the best diode in this application. I. INTRODUCTION The choice of the optimum diode for a given application depends on the estimation www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3604-v2.htm |
STMicroelectronics | 14/06/1999 | 9.87 Kb | HTM | 3604-v2.htm |
| ST | NEW HIGH VOLTAGE ULTRA-FAST DIODES AN601 AN601 AN601 AN601 NEW HIGH VOLTAGE ULTRA-FAST DIODES higher and higher. Fast diodes used for freewheel, snubber, and rectifier functions become one of the ultrafast diodes. Taking into account these new constraints which are different from one application to these two series offer to the designer a double choice, allowing him to use the best diode in this application. I. INTRODUCTION The choice of the optimum diode for a given application depends on the estimation www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3604-v1.htm |
STMicroelectronics | 02/04/1999 | 9.91 Kb | HTM | 3604-v1.htm |