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Part : RER70FR309RC02 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $16.9615 Price Each : $31.0832
Part : RER70FR309RCSL Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $20.3462 Price Each : $37.2998
Part : LVC-LVC-0402LFR309F Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0402LFR309J Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0603LFR309F Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0603LFR309J Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0805LFR309F Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
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Part : SP20FR309JLF Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
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fr 309

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Symbol V RRM V RMS V DC I(AV) IFSM VF IR Trr Cj R JA TJ FR 301 50 35 50 FR 302 100 70 100 FR 303 200 140 200 FR 304 400 280 400 3. 0 FR 305 600 420 600 FR 306 800 560 800 FR 307 1000 700 1000 FR Units FR 309 308 V 1200 1300 840 910 V 1200 1300 V A 150 1. 2 5 150 150 250 60 40 -
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FR301-FR309 FR309 DO-201AD FR301
Abstract: r . . i . 50 100 400 600 FR E Q U EN C Y - MHz i 800 i 1000 1200 300 400 500 600 , MAG 3.18 3.15 3.14 3.13 3.12 3.11 3.09 3.09 3.09 3.11 3.12 3.15 3.18 3.15 3.09 2.96 2.69 S21 ANG , 30 50 100 400 600 FR EQ UEN CY - MHz 800 1000 1200 Power Output at 1 dB , 20 30 50 100 400 600 FR EQ UEN CY · MHz 800 1000 1200 FREQ MHZ 0.3 10 30 50 , INTERCEPT 10 20 30 50 100 400 600 FR EQ UEN CY - MHz 800 1000 1200 LINEAR -
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AC1057 S1057
Abstract: Voltage Variable Absorptive Attenuator, 20 dB DC-2 GHz AT-309 Features · 20 dB Voltage Variable , M /A -C O M 's A T -309 is a G aAs M M IC vo lta g e va riab le absorptive attenuator in a low cost SOIC 8-LD surface mount plastic package. The AT-309 is ideally suited for use where attenuation fine , , cellular, and GPS equipment and other Automatic Gain/Level Control circuits. The AT-309 is fabricated with , -309 PIN AT-309TR AT-309R TR Package S O IC 8 Lead Forward Tape & Reel Reverse T ape & Reel -
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AT-309
Abstract: -31.8 -31.2 -30.8 -30.6 -30.9 -30.9 REV/ISO DB K E Y : + 2 5 ° C -+ 8 5 ° C - DDEL , 2.5 3.0 3.5 4.0 4.2 3100 3400 3700 4000 FR EQ UEN CY - GHz Noise Figure - u B , 2.5 3.0 3.5 4.0 4.2 1600 1900 2200 2500 FR EQ U EN C Y - GHz Power Output at 1 dB , -30.9 -30.2 -30.0 -29.7 -29.8 Intercept Point Ifee = 15 - dBm 700 1000 1300 1600 1900 2200 2500 , 3.5 4.0 4.2 FR EQ U EN C Y - GHz Intercept Point Ifee = 12 - dBm INTERCEPT POINT FR E -
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AR4019
Abstract: DB -31.6 -30.9 -30.2 -30.1 -30.1 -30.3 -29.9 -29.6 -30.7 Gain vs Temperature AC581 24.0 - uB 23.0 , 400 500 600 500 600 FR EQ UEN CY - MHz LINEAR S-PARAMETERS Gain vs Temperature AC582 25.0 - d B 24.0 23.0 22. 0 10 20 30 50 100 200 300 400 500 600 FR EQ U EN C Y - MHz Model: AC582 , 0.9 1.1 lcc=38.72 REV/ISO DB -31.5 -30.9 -30.1 -30.0 -30.1 -30.3 -29.7 -29.5 -30.7 NuiSE 2.0 I 10 20 30 50 100 200 I 300 FR EQ U EN C Y - MHz I 400 AC581 500 600 10 20 50 100 200 -
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581AC a 1009 581/A
Abstract: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â'¢ LOW , Voltage VcES : BC307 -50 V : BC308/309 -30 V Collector-Emitter Voltage VcEO : BC307 -45 V : BC308/309 -25 V Emitter-Base Voltage Vebo -5 V Collector Current (DC) lc -100 mA Collector , Breakdown Voltage : BC307 : BC308/309 Collector Emitter Breakdown Voltage : BC307 : BC308/309 Emitter Base , Ices hFE Vce (sat) Vbe (sat) Vbe (on) fr CcbO Cebo NF NF lc= -2mA, Ib=0 Ic=-10HA, lB=0 Ie= -10hA, Ib -
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BC309 BC239 309 T BC307/308/309 BC308/309 BC238/239 BC237/238
Abstract: BE5-916FFR BE5-926F1 FR 1 3.5 .138 2.3 .091 2.7 .106 7.85 .309 5.2 .205 4.65 .183 BE8.9/8-118GFR 2 , inches BE5-916FFR BE5-926F1FR 3.5 .138 2.3 .091 2.7 .106 7.85 .309 5.2 .205 4.65 .183 BE8 , 0.2x0.5 6 5.7 78 4 8 1.62 12.4 Diallyl Phtalate 0.03 0.07 FE-5-A 0.2 0.2x0.6 6 9.3 11.3 4 8 2.79 14.4 FR Phenol 0.17 â'" 0.35 0.3x0.5 8 il s 7.5 22.4 FR Phenol 0.31 FEM12.7/13.7-A 0.4 0.3x0.5 8 v97 3.06 18.5 FR Phenol 0.16 FER9.5/5-A fi 9 0.4 0.25x0.7 10 12 6 1.73 21.5 FR Phenol 0.21 FER11/3.9-A _4_7_ -
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BEM12 B65527-B1008-T1 BER9.5 E140 core BEM-12 TDK AL-value ferrite R series BE-5-916F BE-5-926F 7-118GAFR 5/5-118GAFR BER11/3 9-1110GAFR BER11/5-1110GAFR
Abstract: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 , Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9 Emitter-Base , :BC307 :BC308/309 Collector Emitter Breakdown Voltage :BC307 :BC308/309 Emitter Base Breakdown Voltage Collector Cutoff Current :BC307 :BC308/309 DC Current Gain Collector Emitter Saturation , Figure :BC307/308 :BC309 :BC309 Cebo Cebo NF fr NF V ce = â'" 4 5 V , lB=0 V ce = - 25V -
OCR Scan
Abstract: spektrale Anpassung an Si-Fotoempfänger â'¢ Sehr plane Oberfläche â'¢ Gehäusegleich mit SFH 309 , photodetectors â'¢ Plane surface â'¢ Same package as SFH 309 Applications â'¢ Photointerrupters â'¢ Fibre , 100 mA TCX j 0.25 nm/K Semiconductor Group 3 03.96 ooBi " 8 I '£8 3 ; 9 9 6 £ fr fr £ fr fr+* u -
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Q62703-Q517 sfh 309 fr FR 309 diode AP 309 GEX06
Abstract: 0.776 0.759 0.751 0.748 0.794 DELAY NSEC lcc=16.29 REV/ISO DB -31.2 -30.9 -30.6 -30.7 -30.8 -30.8 -30.8 -30.9 -30.8 Gain vs Temperature 25.5 - K E Y : + 2 5 ° C -+ 8 5 ° C - 5 5 ° C - GAIN 150 200 250 300 350 350 FR EQ UEN CY - MHz Model: AC380 FREQ MHz 10 , -I 150 -I 250 300 350 100 150 200 250 300 350 400 450 I 200 I 100 FR EQ UEN CY , 300 350 FR EQ UEN CY - MHz dBm Intercept Point 50 40 30 20 10 5 10 30 50 100 150 200 250 FR -
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0809 al
Abstract: Selection guide TYPE NUMBER V CEO ·c (V) (mA) Plot (mw) min. max. fr typ (MHz , 227 231 237 241 237 241 261 261 267 267 267 271 271 271 271 281 281 285 293 293 301 301 301 309 309 309 309 647 220 450 220 450 800 220 310 460 630 220 450 800 600 600 250 160 160 220 310 460 630 120 , fr typ. (MHz) PAGE PNP BCP51 BCP52 BCP53 BCP69 BCV26 BCV28 BCV46 BCV48 BCW29 BCW30 BCW61A , TYPE NUMBER V CEO ·c (V) (mA) Ptot (mw) min. max. fr typ(MHz) PAGE NPN BF570 -
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philips fr 310 TYP 513 309 Philips Semiconductors Selection Guide BC817 BC818 BC846 BC847 BC848 BC868
Abstract: A fa Eight-Way Power Divider 2-500 MHz Low Loss - Typically 1 dB High Isolation - Typically 30 dB Low VSW R - Typically 1.3:1 C-18 kV DS-309 ft* fr»3 ;- r i7«2 » (50.8) 3.000 FT- ; I 4.! (114.3) SH-*-1~*-^ ' i Guaranteed Specifications* (From - 5 5 ° C to + 8 5 ° C ) Frequency Range Insertion Loss (Less coupling) Isolation 2-100 MHz 100-500 MHz Amplitude , Model No. DS-309 DS-309 BNC SMA Package Connectorized Connectorized 8 ISOLATION FREQUENCY MHz -
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100-500MHz DS-309
Abstract: at the 60% or 90% confidence level (Cf). The failure rate, Fr, is related to the acceleration during life test by: Fr = X/(ts * AfV * AfT * N * 2) X = Chi-Sq statistical upper limit N = Life test , FIT rate is related to MTTF by: MTTF = 1/Fr NOTE: MTTF is frequently used interchangeably with MTBF , 0034 READPOINT QUANTITY 125C 24 HOURS 309 MOISTURE SOAK 85 C/85% R.H. 168 HOURS 309 CONVECTION REFLOW 235C 3 PASS 309 FAILS STORAGE LIFE 125C 24 Maxim Integrated Products
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Ablebond 71 9727 DS1004 MIL-STD-883-2004 MIL-STD-883-2003 MIL-STD-883-2012 MIL-STD-883-2016 MIL-STD-883-2015
Abstract: RDDS (RDD*) Description: FR-4 (FSDS) Mat'l: FR-4 Fiberglass Epoxy Board Index: -40°C to 140°C (-40°F , Row FR-4 KNS - Dual Row Peel-A-Way ® RDDS - Dual Row Molded RDD*- Dual Row Molded KTS - Triple Row , and Peel-A-Way Insulators Standard Quick-Turn Female Terminals Type -168 Molded or FR-4 only QU , . Type -205 Molded or FR-4 only (Not Quick-Turn) .042 Dia. (1.07) AY V D E LI Type -347 Molded or FR-4 only Type -227 Peel-A-Way® only (Not Quick-Turn) .042 Dia. (1.07) .041 Dia. (1.04 Advanced Interconnections
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kbs 922 KBA020-525G KBA020-526G KBS020-227MG FSDS020-551GG FSDS020-553GG FSDS020-168GG
Abstract: TAI-SAW TECHNOLOGY CO., LTD. TST DCC Release document FR-03S06-02 TAI-SAW TECHNOLOGY CO., LTD , C.OUTLINE DRAWING: 309 TB Pin configuration #L Input or Balanced Input #M Input ground or Balanced , TST DCC Release document 2. TAPE DIMENSION 309 TB 309 TB Direction of Feed TAI-SAW TAI-SAW Technology
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TB0309A TB030 FR-03S06-02
Abstract: ^6T083£09T © c o p m rs H T 1966 A M P DEUTSCHLAND iSnBH a u m · - - - n e c t fr e v o k b b h a l t e n TECHNISCHEN FORT SCHRITT O JENEN, BE HALTEN MIR UWS VOR , 15 16 17 10 iS 20 21 a? 23 24 25 a£ 27 26 29 90 91 823 309 £ 8 8 -5 2 5 4 4 !L*0. 4 7 .6 » , S S . 34 ~9eSX£UL" NR. -2 -9 -4 629 309 S -6 -7 -B -9 -0 11_ 1· 11T112222~ 2·222«7 -e ~9 -0 -I . -2 , | K 829 309 -
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K829 1117s a2324 a2726 R707A
Abstract: FR EQ UEN CY - MHz G ain vs Tem perature 32.0 - u B 31.0 30.0 29.0 5 10 30 50 100 200 A C 525 , 400 500 600 FR EQ UEN CY - MHz N oise F igure · d B 4. 700 700 Model: AC524 FREQ MHZ 2 5 10 , 1.15 1.09 1.10 1.14 1.17 1.17 1.12 1.08 GAIN DB 29.0 30.3 30.5 30.6 30.7 30.8 30.9 30.9 30.7 30.3 Vcc , 200 | . I. 300 400 IP 3 I 500 600 100 200 300 400 500 600 FR EQ UEN CY - MHz In te rc e p t P o in t A C 525 - dBm INTERCEPT POINT FR EQ UEN CY - MHz 2003 408-522-3838 -
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AC525 AC524/AC525 AS524/AS525
Abstract: w p r A i II L I I C L f J k l l GaAs PLASTIC SIDE LOOK INFRARED EMITTING DIODE LTE-302-M/LTE-309 , phototransistor. ·The LTE-309 series are made with Gallium Arsenide infrared emitting diodes. DESCRIPTION The LTE-302-M/LTE-309 series are high intensity Gallium Arsenide infrared emitting diodes mounted in clear plastic side looking packages. The LTE-302-M/LTE-309 series provides a broad range of intensity selection PACKAGE DIMENSIONS LTE-302-M LTE-309 1.10 (.043) 0.75 (.030) (.157) 1.80 (fo T tji 1 0.76±0.1 (.03 -
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2D05 Infrared Phototransistor 302 LTR-5888 LTE-302-M/LTE-309 CTR-5576D/LTR5888DH LTE-309 30MIN
Abstract: on FR-4 PCB 1.6" X 1.6" X 0.06." ã1997 Fairchild Semiconductor Corporation 5-30 J309 / J310 , 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 125°C VDS = 10 V, ID = 1.0 nA - 25 - 1.0 - 1.0 309 310 - , , IG = 1.0 mA 309 310 12 24 30 60 1.0 mA mA V SMALL SIGNAL CHARACTERISTICS Re(yis) Common-Source , MHz 309 310 VDS = 10, ID = 10 mA, f = 100 MHz VDS = 10, ID = 10 mA, f = 100 MHz 0.7 0.5 0.25 16 12 12 , Noise Figure Equivalent Short-Circuit Input Noise Voltage VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS Fairchild Semiconductor
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j310 J310 equivalent J309 J310 applications J310 -TO92 MMBFJ309 MMBFJ310 J309-J310 MMBFJ309-310
Abstract: (Ref.) (dB) 31.9 < -40 -0.3 +/- 1.5 30.9 < -40 < -34 25.0 < -32 - 31.9 40.4 < -31 -2 Spurious 45.0 25.0 Response -< -30 30.9 38.9 -< -31 45.0 3 Insertion Loss , 37 38 39 40 41 42 43 FR EQUENC Y (M Hz) Package ( C type ) Pin Connection SANYO Crystal Division
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TSB6326C
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