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Part Manufacturer Description Datasheet BUY
RER70FR309RCSL Vishay Dale RESISTOR, WIRE WOUND, 20 W, 1 %, 100 ppm, 0.309 ohm, CHASSIS MOUNT visit Digikey
RER70FR309RC02 Vishay Dale RESISTOR, WIRE WOUND, 20 W, 1 %, 100 ppm, 0.309 ohm, CHASSIS MOUNT visit Digikey
CRCW0201309RFNED Vishay Dale 0201,309,200PPM,1%,T/R,HAZMAT - Tape and Reel visit Digikey

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Part : RER70FR309RC02 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $16.9615 Price Each : $28.8210
Part : RER70FR309RCSL Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $20.3462 Price Each : $34.5852
Part : LVC-LVC-0402LFR309F Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0402LFR309J Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0603LFR309F Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0603LFR309J Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0805LFR309F Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : LVC-LVC-0805LFR309J Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : SP20FR309JLF Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : SP20FR309KLF Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : SPFR309JLF Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : SPFR309KLF Supplier : TT Electronics Manufacturer : Sager Stock : - Best Price : - Price Each : -
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fr+309

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MAG 3.18 3.15 3.14 3.13 3.12 3.11 3.09 3.09 3.09 3.11 3.12 3.15 3.18 3.15 3.09 2.96 2.69 S21 ANG , 137.4 104.3 47.0 3.10 -31.5 -59.0 MAG 3.15 3.12 3.11 3.10 3.09 3.07 3.05 3.05 3.04 3.06 3.07 3.09 3.11 -
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AC1057 S1057
Abstract: Voltage Variable Absorptive Attenuator, 20 dB DC-2 GHz AT-309 Features · 20 dB Voltage Variable , M /A -C O M 's A T -309 is a G aAs M M IC vo lta g e va riab le absorptive attenuator in a low cost SOIC 8-LD surface mount plastic package. The AT-309 is ideally suited for use where attenuation fine , , cellular, and GPS equipment and other Automatic Gain/Level Control circuits. The AT-309 is fabricated with , -309 PIN AT-309TR AT-309R TR Package S O IC 8 Lead Forward Tape & Reel Reverse T ape & Reel -
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AT-309
Abstract: -31.8 -31.2 -30.8 -30.6 -30.9 -30.9 REV/ISO DB K E Y : + 2 5 ° C -+ 8 5 ° C - DDEL , -30.9 -30.2 -30.0 -29.7 -29.8 Intercept Point Ifee = 15 - dBm 700 1000 1300 1600 1900 2200 2500 -
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AR4019
Abstract: DB -31.6 -30.9 -30.2 -30.1 -30.1 -30.3 -29.9 -29.6 -30.7 Gain vs Temperature AC581 24.0 - uB 23.0 , 0.9 1.1 lcc=38.72 REV/ISO DB -31.5 -30.9 -30.1 -30.0 -30.1 -30.3 -29.7 -29.5 -30.7 NuiSE 2.0 , 0.79 0.92 lcc=30.80 REV/ISO DB -31.4 -30.9 -30.1 -30.1 -30.3 -30.5 -30.2 -29.9 -30.4 OUTPUT 20 -
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581AC a 1009 AC582 581/A
Abstract: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â'¢ LOW , Voltage VcES : BC307 -50 V : BC308/309 -30 V Collector-Emitter Voltage VcEO : BC307 -45 V : BC308/309 -25 V Emitter-Base Voltage Vebo -5 V Collector Current (DC) lc -100 mA Collector , Breakdown Voltage : BC307 : BC308/309 Collector Emitter Breakdown Voltage : BC307 : BC308/309 Emitter Base , Respective Manufacturer BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER -
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BC309 BC239 fr 309 309 T BC307/308/309 BC308/309 BC238/239 BC237/238
Abstract: ER9.5_8pin_SMD_TDK_EPCOS.pdf (69/76) 002-01 / 20030729 / e140 Ferrite For Switching Power Supplies SMD Cores EE, ER and EEM Series Cores ^ - ^ M Part No. Type Dimensions in mm inches 2B Ci C2 2H 5.25±0.05 5.3±0.1 Dimensions in mm inches Part No. Type A B C X Y Z BE5-916FFR BE5-926F1 FR 1 3.5 .138 2.3 .091 2.7 .106 7.85 .309 5.2 .205 4.65 .183 BE8.9/8-118GFR 2 , inches BE5-916FFR BE5-926F1FR 3.5 .138 2.3 .091 2.7 .106 7.85 .309 5.2 .205 4.65 .183 BE8 -
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BEM12 B65527-B1008-T1 BER9.5 E140 core BEM-12 TDK AL-value ferrite R series BE-5-916F BE-5-926F 7-118GAFR 5/5-118GAFR BER11/3 9-1110GAFR BER11/5-1110GAFR
Abstract: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 , Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9 Emitter-Base , :BC307 :BC308/309 Collector Emitter Breakdown Voltage :BC307 :BC308/309 Emitter Base Breakdown Voltage Collector Cutoff Current :BC307 :BC308/309 DC Current Gain Collector Emitter Saturation , â  ?Tb4145 0 025 05 4 bl7 â  BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR -
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BC307/308
Abstract: spektrale Anpassung an Si-Fotoempfänger â'¢ Sehr plane Oberfläche â'¢ Gehäusegleich mit SFH 309 , photodetectors â'¢ Plane surface â'¢ Same package as SFH 309 Applications â'¢ Photointerrupters â'¢ Fibre -
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Q62703-Q517 sfh 309 fr FR 309 diode AP 309 GEX06
Abstract: 0.776 0.759 0.751 0.748 0.794 DELAY NSEC lcc=16.29 REV/ISO DB -31.2 -30.9 -30.6 -30.7 -30.8 -30.8 -30.8 -30.9 -30.8 Gain vs Temperature 25.5 - K E Y : + 2 5 ° C -+ 8 5 ° C - 5 5 ° C -
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0809 al AC380
Abstract: 227 231 237 241 237 241 261 261 267 267 267 271 271 271 271 281 281 285 293 293 301 301 301 309 309 309 309 647 220 450 220 450 800 220 310 460 630 220 450 800 600 600 250 160 160 220 310 460 630 120 -
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TYP 513 309 philips fr 310 Philips Semiconductors Selection Guide BC817 BC818 BC846 BC847 BC848 BC868
Abstract: A fa Eight-Way Power Divider 2-500 MHz Low Loss - Typically 1 dB High Isolation - Typically 30 dB Low VSW R - Typically 1.3:1 C-18 kV DS-309 ft* fr»3 ;- r i7«2 » (50.8) 3.000 FT- ; I 4.! (114.3) SH-*-1~*-^ ' i Guaranteed Specifications* (From - 5 5 ° C to + 8 5 ° C ) Frequency Range Insertion Loss (Less coupling) Isolation 2-100 MHz 100-500 MHz Amplitude , Model No. DS-309 DS-309 BNC SMA Package Connectorized Connectorized 8 ISOLATION FREQUENCY MHz -
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100-500MHz DS-309
Abstract: 0034 READPOINT QUANTITY 125C 24 HOURS 309 MOISTURE SOAK 85 C/85% R.H. 168 HOURS 309 CONVECTION REFLOW 235C 3 PASS 309 FAILS STORAGE LIFE 125C 24 HOURS 309 MOISTURE SOAK 0034 85 C/85% R.H. 168 HOURS 309 CONVECTION REFLOW 235C 3 PASS 309 2 Total: 7 9 TEMPERATURE CYCLE DESCRIPTION DATE CODE Maxim Integrated Products
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Ablebond 71 9727 DS1004 MIL-STD-883-2004 MIL-STD-883-2003 MIL-STD-883-2012 MIL-STD-883-2016 MIL-STD-883-2015
Abstract: ) .246/(6.25) .309/(7.85) .348/(8.84) .363/(9.22) Male Part # KBA020-131G KBA020-321G KBA020-322G KBA020 , ) .168/(4.27) .192/(4.88) .196/(4.98) .211/(5.36) .215/(5.46) .309/(7.85) Male Part # KBA020-525G KBA020 Advanced Interconnections
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kbs 922 KBA020-526G KBS020-227MG FSDS020-551GG FSDS020-553GG FSDS020-168GG FSDS020-205GG
Abstract: C.OUTLINE DRAWING: 309 TB Pin configuration #L Input or Balanced Input #M Input ground or Balanced , TST DCC Release document 2. TAPE DIMENSION 309 TB 309 TB Direction of Feed TAI-SAW TAI-SAW Technology
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TB0309A TB030 FR-03S06-02
Abstract: 15 16 17 10 iS 20 21 a? 23 24 25 a£ 27 26 29 90 91 823 309 £ 8 8 -5 2 5 4 4 !L*0. 4 7 .6 » , S S . 34 ~9eSX£UL" NR. -2 -9 -4 629 309 S -6 -7 -B -9 -0 11_ 1· 11T112222~ 2·222«7 -e ~9 -0 -I . -2 , | K 829 309 -
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K829 1117s a2324 a2726 R707A 6T083
Abstract: 1.15 1.09 1.10 1.14 1.17 1.17 1.12 1.08 GAIN DB 29.0 30.3 30.5 30.6 30.7 30.8 30.9 30.9 30.7 30.3 Vcc -
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AC524 AC525 AC524/AC525 AS524/AS525
Abstract: 700 1000 FR Units FR 309 308 V 1200 1300 840 910 V 1200 1300 V A 150 1. 2 5 150 150 250 60 40 -
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FR301-FR309 FR309 DO-201AD FR301
Abstract: w p r A i II L I I C L f J k l l GaAs PLASTIC SIDE LOOK INFRARED EMITTING DIODE LTE-302-M/LTE-309 , phototransistor. ·The LTE-309 series are made with Gallium Arsenide infrared emitting diodes. DESCRIPTION The LTE-302-M/LTE-309 series are high intensity Gallium Arsenide infrared emitting diodes mounted in clear plastic side looking packages. The LTE-302-M/LTE-309 series provides a broad range of intensity selection PACKAGE DIMENSIONS LTE-302-M LTE-309 1.10 (.043) 0.75 (.030) (.157) 1.80 (fo T tji 1 0.76±0.1 (.03 -
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2D05 Infrared Phototransistor 302 LTR-5888 LTE-302-M/LTE-309 CTR-5576D/LTR5888DH LTE-309 30MIN
Abstract: 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 125°C VDS = 10 V, ID = 1.0 nA - 25 - 1.0 - 1.0 309 310 - , , IG = 1.0 mA 309 310 12 24 30 60 1.0 mA mA V SMALL SIGNAL CHARACTERISTICS Re(yis) Common-Source , MHz 309 310 VDS = 10, ID = 10 mA, f = 100 MHz VDS = 10, ID = 10 mA, f = 100 MHz 0.7 0.5 0.25 16 12 12 , Noise Figure Equivalent Short-Circuit Input Noise Voltage VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS = 10, ID = 10 mA, f = 1.0 kHz VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS = 10, ID = 10 mA, f = Fairchild Semiconductor
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j310 J310 equivalent J309 J310 applications J310 -TO92 MMBFJ309 MMBFJ310 J309-J310 MMBFJ309-310
Abstract: (Ref.) (dB) 31.9 < -40 -0.3 +/- 1.5 30.9 < -40 < -34 25.0 < -32 - 31.9 40.4 < -31 -2 Spurious 45.0 25.0 Response -< -30 30.9 38.9 -< -31 45.0 3 Insertion Loss SANYO Crystal Division
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TSB6326C
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